Abstract: Embodiments of the present invention disclose a method, computer program product, and system for providing a severity of a notification for a communication. A computing device determines a topic and associated information of a current activity, operating on the computing device. The computing device receives a communication and determines the topic and associated information of the communication. The computing device determines a level of relevance between the topic and associated information of the received communication and the topic and associated information of the current activity. The computing device determines whether the level of relevance exceeds a predefined threshold, and in response to determining that the level of relevance exceeds the predefined threshold, the computing device provides a notification, wherein the severity of the notification for the communication is proportional to the level of relevance.

Abstract: A fin-type field effect transistor including at least one fin-type semiconductor structure, a gate strip and a gate insulating layer is provided. The fin-type semiconductor structure is doped with a first type dopant and has a block region with a first doping concentration and a channel region with a second doping concentration. The first doping concentration is larger than the second doping concentration. The blocking region has a height. The channel region is configured above the blocking region. The gate strip is substantially perpendicular to the fin-type semiconductor structure and covers above the channel region. The gate insulating layer is disposed between the gate strip and the fin-type semiconductor structure.

Abstract: An approach for unfiltering a filtered electronic communication is provided. In one aspect, a computer system receives filtered electronic communication, wherein the filtered electronic communication is a status message. Moreover, the computer system determines a requestor of the filtered electronic communication. The computer system also detects an attempt made to communicate with the requestor. Furthermore, the computer system unfilters, in response to the attempt, the filtered electronic communication.

Abstract: A finFET device includes a substrate, at least a first fin structure disposed on the substrate, a L-shaped insulator surrounding the first fin structure and exposing, at least partially, the sidewalls of the first fin structure, wherein the height of the L-shaped insulator is inferior to the height of the first fin structure in order to expose parts of the sidewalls surface of the first fin structure, and a gate structure disposed partially on the L-shaped insulator and partially on the first fin structure.

Abstract: A field effect transistor (FET) and a manufacturing method thereof are provided. The FET includes a substrate, a fin bump, an insulating layer, a charge trapping structure and a gate structure. The fin bump is disposed on the substrate. The insulating layer is disposed on the substrate and located at two sides of the fin bump. The charge trapping structure is disposed on the insulating layer and located at at least one side of the fin bump. A cross-section of the charge trapping structure is L-shaped. The gate structure covers the fin bump and the charge trapping structure.

Abstract: Managing the sending of electronic mail (email) messages and responding to requests from indirect recipients for related information. An email message is originated with a first recipient and a recipient request prompt, which comprises a unique recipient request identifier (ID) linking it to the originator's email address. An empty recipient request list is generated, likewise linked to the recipient request ID. The message is then sent to a first recipient, who in turn forwards it to a second recipient. The recipient response prompt is displayed to the second recipient, who uses it to generate a recipient request for related information. The recipient request ID of the originated message and the second recipient's email address are appended to the recipient request, which is then sent to the message originator. The recipient request is received by the email system and parsed. The second recipient's email address is then appended to the recipient request list corresponding to the parsed recipient request ID.

Abstract: The present invention provides a method of forming a trench in a semiconductor substrate. First, a first patterned mask layer is formed on a semiconductor substrate. The first patterned mask layer has a first trench. Then, a material layer is formed along the first trench. Then, a second patterned mask layer is formed on the material layer to completely fill the first trench. A part of the material layer is removed when the portion of the material layer between the second patterned mask layer and the semiconductor substrate is maintained so as to form a second trench. Lastly, an etching process is performed by using the first patterned mask layer and the second patterned mask layer as a mask.

Abstract: A method for fabricating a patterned structure in a semiconductor device is provided. First, a substrate with a first region and a second region is provided. Then, a plurality of sacrificial patterns is respectively formed within the first region and the second region. A first spacer is then formed on the sidewalls of each of the sacrificial patterns followed by forming a mask layer to cover the sacrificial patterns located within the first region. Finally, the first spacer exposed from the mask layer is trimmed to be a second spacer and the mask layer is then removed.

Abstract: Computer apparatus, system and method maintain a database of hyperlinks associated with activities and inactions in the past of a user. From a current work space of the user, a recommendation engine searches the database to retrieve hyperlinks based on user-specified context and topic. The recommendation engine displays recommended hyperlinks (candidates) and enables the user to filter the recommended hyperlinks by original source, activity metric or other relevance. To form and maintain the database, a context analysis engine captures activity content links. Each activity content link has a respective hyperlink associated with an activity/inaction of the user. The context analysis engine generates a metric based on the activity and records the respective hyperlink in the database along with the metric. The recommendation engine and context analysis engine may, on user command, further search social media or social networks in order to make hyperlink recommendations to the user.

Abstract: A method for fabricating a MOS device is described. A first hard mask layer is formed over a substrate. The first hard mask layer is patterned and a portion of the substrate removed to form a first patterned hard mask, and a fin structure surrounded by a trench and extending in a first direction. An insulating layer is formed at the trench bottom. A gate conductive layer is formed on the insulating layer, extending in a second direction. A first implant process is performed using the first patterned hard mask as a mask to form first S/D extension regions in the sidewalls of the fin structure. The first patterned hard mask is removed to expose the top of the fin structure, and then a second implant process is performed to form second S/D extension region therein.

Abstract: A finFET device includes a substrate, at least a first fin structure disposed on the substrate, a L-shaped insulator surrounding the first fin structure and exposing, at least partially, the sidewalls of the first fin structure, wherein the height of the L-shaped insulator is inferior to the height of the first fin structure in order to expose parts of the sidewalls surface of the first fin structure, and a gate structure disposed partially on the L-shaped insulator and partially on the first fin structure.

Abstract: A fin-type field effect transistor including at least one fin-type semiconductor structure, a gate strip and a gate insulating layer is provided. The fin-type semiconductor structure is doped with a first type dopant and has a block region with a first doping concentration and a channel region with a second doping concentration. The first doping concentration is larger than the second doping concentration. The blocking region has a height. The channel region is configured above the blocking region. The gate strip is substantially perpendicular to the fin-type semiconductor structure and covers above the channel region. The gate insulating layer is disposed between the gate strip and the fin-type semiconductor structure.

Abstract: A method of fabricating a double-gate transistor and a tri-gate transistor on a common substrate, in which, a substrate includes a first fin structure covered with a first mask layer and a second fin structure covered with a second mask layer, the first mask layer is removed, a gate material layer is formed and covers the first fin structure and the second mask layer, the gate material layer is patterned to result in a tri-gate structure covering the first fin structure and a double-gate structure covering the second fin structure and the second mask layer, and a source and a drain are formed in each of these two fin structures each at two sides of the gates.

Abstract: A method of fabricating a field effect transistor with a fin structure is described. At least a fin structure is formed on a substrate. A planar insulation layer covering the fin structure is formed. A trench is formed in the insulation layer and intersects the fin structure both lengthwise, and thereby an upper portion of the fin structure is exposed to the trench. The exposed upper portion of the fin structure will serve as a gate channel region. A gate structure covering the upper portion is formed within the trench. The upper portion of the fin structure may be further trimmed. Accordingly, the present invention also relates to a field effect transistor with a fin structure, in which, the channel width is less than the source/drain width, and a gate structure has two sidewalls contacting two opposite sidewalls of a source region and a drain region, respectively.

Abstract: A method of fabricating a double-gate transistor and a tri-gate transistor on a common substrate, in which, a substrate includes a first fin structure covered with a first mask layer and a second fin structure covered with a second mask layer, the first mask layer is removed, a gate material layer is formed and covers the first fin structure and the second mask layer, the gate material layer is patterned to result in a tri-gate structure covering the first fin structure and a double-gate structure covering the second fin structure and the second mask layer, and a source and a drain are formed in each of these two fin structures each at two sides of the gates.

Abstract: A semiconductor structure is provided in the present invention. The semiconductor structure includes a substrate, a first material layer and a second material layer. A trench region is defined on the substrate. The trench region includes two separated first regions and a second region, wherein the second region is adjacent to and between the two first regions. The first material layer is disposed on the substrate outside the trench region. The second material layer is disposed in the second region and is level with the first material layer.

Abstract: Computer apparatus, system and method maintain a database of hyperlinks associated with activities and inactions in the past of a user. From a current work space of the user, a recommendation engine searches the database to retrieve hyperlinks based on user-specified context and topic. The recommendation engine displays recommended hyperlinks (candidates) and enables the user to filter the recommended hyperlinks by original source, activity metric or other relevance. To form and maintain the database, a context analysis engine captures activity content links. Each activity content link has a respective hyperlink associated with an activity/inaction of the user. The context analysis engine generates a metric based on the activity and records the respective hyperlink in the database along with the metric. The recommendation engine and context analysis engine may, on user command, further search social media or social networks in order to make hyperlink recommendations to the user.

Abstract: A method for assisting customer knowledge using social media data. Responses to text-based posts regarding compatibility of an updated product with respect to other products/components in a complex product environment are aggregated and used to create what is referred to herein as a “dynamic account.” The dynamic account contains information regarding the compatibility of an updated product from a particular vendor/company with other products from other vendors/companies, where these products are used in combination in a complex product environment. This knowledge base may be used by users of a social network system who are customers of these companies to keep them informed regarding compatibility issues when an update to a product occurs.

Abstract: A method, system and computer program product for assisting customer knowledge using social media data. Responses to text-based posts regarding compatibility of an updated product with respect to other products/components in a complex product environment are aggregated and used to create what is referred to herein as a “dynamic account.” The dynamic account contains information regarding the compatibility of an updated product from a particular vendor/company with other products from other vendors/companies, where these products are used in combination in a complex product environment. This knowledge base may be used by users of a social network system who are customers of these companies to keep them informed regarding compatibility issues when an update to a product occurs.

Abstract: The invention provides a portable computer with shared hardware resources that can be used by other computers. The portable computer includes an interface converter, a control module, a power management module, and a power path switch. When the portable computer is powered off and connected with a computer host through a serial bus interface, the shared hardware resources of the portable computer obtain power from the computer host through the serial bus interface. The interface converter converts data between a shared hardware resource interface format and a serial bus interface format, and enables the shared hardware resources to communicate with the computer host and therefore are employed by the computer host. In one embodiment, the shared hardware resources include a keyboard. In another embodiment, the shared hardware resources include a keyboard and a display.