Abstract: An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.

Abstract: An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.

Abstract: MEMS microphone and vibration sensor dies and packages are described. In an embodiment, a MEMS microphone and vibration sensor die includes a die substrate, a MEMS microphone on the die substrate and a MEMS vibration sensor on the die substrate. The MEMS vibration sensor may include a plurality of beams with different proof masses corresponding to different resonant frequencies, wherein the different proof masses comprise a same material as the die substrate.

Abstract: MEMS microphone and vibration sensor dies and packages are described. In an embodiment, a MEMS microphone and vibration sensor die includes a die substrate, a MEMS microphone on the die substrate and a MEMS vibration sensor on the die substrate. The MEMS vibration sensor may include a plurality of beams with different proof masses corresponding to different resonant frequencies, wherein the different proof masses comprise a same material as the die substrate.

Abstract: An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.

Abstract: A CMOS imager assembly may include an integrated circuit (IC) having an active-pixel image sensor that is mounted on a printed circuit board (PCB) substrate using flip chip packaging technology. The IC and the PCB may be physically and electrically connected to each other through multiple electrically conductive connectors. An underfill material (which may include an anti-reflective material) may, during assembly, be introduced around the connectors in the space between the IC and the PCB. A chemical or physical discontinuity on the integrated circuit may, during assembly, prevent the underfill material from entering an area framed by the discontinuity, which may include the pixel array of the image sensor. The discontinuity may include a dam-like structure built up on the IC, a trench-like structure created on the IC, or a low surface tension material that has been applied to the surface of the IC.

Abstract: An optical system can include a curved light sensor and an optical system positioned in front of the curved light sensor. The curved light sensor includes a substrate and a patterned stress film formed over at least surface of the substrate.

Abstract: A semiconductor strain gauge may be incorporated into a flexible printed circuit. The semiconductor strain gauge may be mounted in an opening in the flexible printed circuit. Electrical connections such as wire bonds may couple the semiconductor strain gauge to metal traces on a flexible printed circuit substrate in the flexible printed circuit. A flexible printed circuit opening may be filled with an encapsulant that encapsulates a semiconductor strain gauge. Vias may be formed through the encapsulant to contact the semiconductor strain gauge. Metal traces that run across the surface of the substrate and the encapsulant may contact the vias to form paths to the semiconductor strain gauge. A semiconductor strain gauge may be mounted on a substrate and covered with dielectric. Metal traces in a redistribution layer in the dielectric may overlap the semiconductor strain gauge and make contact to the semiconductor strain gauge.

Abstract: An electronic device may be provided with a flexible printed circuit. The flexible printed circuit may have layers of metal and dielectric. Strain gauge resistors may be formed from a strain gauge metal such as constantan. The strain gauge metal may be formed within the flexible printed circuit layers. A strain gauge may include strain gauge circuitry coupled to a strain gauge bridge circuit. Strain gauge resistors for the bridge circuit may be formed from traces that follow parallel meandering paths in the flexible printed circuit layers. A component such as a fingerprint sensor may overlap the strain gauge resistors. Strain gauge resistors may be formed in different overlapping metal layers in the flexible printed circuit layers or may be formed from the same metal layer. Electroplating techniques may be used to form metal traces to which solder balls or wire bonds are coupled.

Abstract: A CMOS imager assembly may include an integrated circuit (IC) having an active-pixel image sensor that is mounted on a printed circuit board (PCB) substrate using flip chip packaging technology. The IC and the PCB may be physically and electrically connected to each other through multiple electrically conductive connectors. An underfill material (which may include an anti-reflective material) may, during assembly, be introduced around the connectors in the space between the IC and the PCB. A chemical or physical discontinuity on the integrated circuit may, during assembly, prevent the underfill material from entering an area framed by the discontinuity, which may include the pixel array of the image sensor. The discontinuity may include a dam-like structure built up on the IC, a trench-like structure created on the IC, or a low surface tension material that has been applied to the surface of the IC.