Abstract: Novel compositions and methods of using those compositions to form metal oxide films or coatings are provided. The compositions comprise an organometallic oligomer and an organic polymer or oligomer dispersed or dissolved in a solvent system. The compositions have long shelf lives and can be prepared by easy and reliable preparation procedures. The compositions can be cured to cause conversion of the composition into films of metal oxide interdispersed with organic polymer or oligomer. The cured films have high refractive indices, high optical clarities, and good mechanical stabilities at film thicknesses of greater than about 1 &mgr;m.

Abstract: An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is non-aromatic and can be directly incorporated (either physically or chemically) into photolithographic compositions such as bottom anti-reflective coatings (BARC) and contact or via hole fill materials. The preferred non-aromatic compounds of the invention are conjugated aliphatic and alicyclic compounds which greatly enhance the plasma etch rate of the composition. Furthermore, the light attenuating compounds are useful for absorbing light at shorter wavelengths. In one embodiment, the inventive compounds can be polymerized so as to serve as both the polymer binder of the composition as well as the light absorbing constituent.

Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted ring members. In another embodiment, the polymers further comprise recurring monomers comprising ring members reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

Abstract: An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is non-aromatic and can be directly incorporated (either physically or chemically) into photolithographic compositions such as bottom anti-reflective coatings (BARC) and contact or via hole fill materials. The preferred non-aromatic compounds of the invention are conjugated aliphatic and alicyclic compounds which greatly enhance the plasma etch rate of the composition. Furthermore, the light attenuating compounds are useful for absorbing light at shorter wavelengths. In one embodiment, the inventive compounds can be polymerized so as to serve as both the polymer binder of the composition as well as the light absorbing constituent.

Abstract: A composition is derived from an addition polymerizable organotitanium polymer which upon exposure to an oxygen plasma or baking in air, is converted to titanium dioxide (titania) or is converted to a mixed, titanium-containing metal oxide. The metal oxide formed in situ imparts etch-resistant action to a patterned photoresist layer. The composition may also be directly deposited and patterned into permanent metal oxide device features by a photolithographic process.

Abstract: Thermosetting, bottom-applied polymeric anti-reflective coatings exhibiting high optical density, rapid plasma etch rates, high solubility in preferred coating solvents, excellent feature coverage, and improved stability in solution are disclosed. The principal component of these new anti-reflective coatings is a polyester resin produced by the reaction of one or more difunctional aliphatic carboxylic acids with a stoichiometric excess of a di- and/or a trifunctional aliphatic primary alcohol, wherein at least one of the dicarboxylic acids may contain a reactive methylene (--CH.sub.2 --) group. The resulting polyester resin reaction product is further modified by attaching light-absorbing groups to some or all of the reactive methylene groups (if present) and/or hydroxy groups present on the resin. The dye-attached polyester resin is combined with an aminoplast crosslinking agent and acid catalyst in a suitable solvent system to form the final anti-reflective coating.

Abstract: Thermosetting, bottom-applied polymeric anti-reflective coatings exhibiting high optical density, rapid plasma etch rates, high solubility in preferred coating solvents, excellent feature coverage, and improved stability in solution are disclosed. The principal component of these new anti-reflective coatings is a polyester resin produced by the reaction of one or more difunctional aliphatic carboxylic acids with a stoichiometric excess of a di- and/or a trifunctional aliphatic primary alcohol, wherein at least one of the dicarboxylic acids may contain a reactive methylene (--CH.sub.2 --) group. The resulting polyester resin reaction product is further modified by attaching light-absorbing groups to some or all of the reactive methylene groups (if present) and/or hydroxy groups present on the resin. The dye-attached polyester resin is combined with an aminoplast crosslinking agent and acid catalyst in a suitable solvent system to form the final anti-reflective coating.

Abstract: Thermosetting, bottom-applied polymeric anti-reflective coatings exhibiting high optical density, rapid plasma etch rates, high solubility in preferred coating solvents, excellent feature coverage, and improved stability in solution are disclosed. The principal component of these new anti-reflective coatings is a polyester resin produced by the reaction of one or more difunctional aliphatic carboxylic acids with a stoichiometric excess of a di- and/or a trifunctional aliphatic primary alcohol, wherein at least one of the dicarboxylic acids may contain a reactive methylene (--CH.sub.2 --) group. The resulting polyester resin reaction product is further modified by attaching light-absorbing groups to some or all of the reactive methylene groups (if present) and/or hydroxy groups present on the resin. The dye-attached polyester resin is combined with an aminoplast crosslinking agent and acid catalyst in a suitable solvent system to form the final anti-reflective coating.

Abstract: A method for making multilayer resist structures for microlithographic processing using a thermosetting anti-reflective coating is disclosed for a broad range of exposure wavelengths, said coating containing an active curing catalyst, ether or ester linkages derived from epoxy functionality greater than 3.0, a dye-grafted hydroxyl-functional oligomer, and an alkylated aminoplast crosslinking agent, all present in a low-to-medium alcohol-containing solvent.

Abstract: Mid-UV dyes enabling ultra thin antireflection coatings for multi-layer i-line photoetching are produced from bichalcones; bis-a-cyanoacrylates/bis-cyanoacrylamides; and 1.4 divinylbenzenes. The dyes are nonsubliminal and differentially insoluble in standard photoresist solvents.

Abstract: A thermosetting anti-reflective coating and method for making and using the same is disclosed for a broad range of exposure wavelengths, said coating containing an active curing catalyst, ether or ester linkages derived from epoxy functionality greater than 3.0, a dye-grafted hydroxyl-functional oligomer, and an alkylated aminoplast crosslinking agent, all present in a low-to-medium alcohol-containing solvent.

Abstract: Mid-UV dyes enabling ultra thin antireflection coatings for multi-layer i-line photoetching are produced from bichalcones; bis-a-cyanoacrylates/bis-cyanoacrylamides; and 1.4 divinylbenzenes. The dyes are nonsubliminal and differentially insoluble in standard photoresist solvents.

Abstract: A composition and a method for forming an anti-reflective layer for DUV microlithographic processes is disclosed. The compositions of the present invention includes a polymer dissolved in a suitable solvent. The polymers are polysulfone and polyurea polymers which possess inherent light absorbing properties at deep ultraviolet wavelengths. In accordance with the method of the present invention, these compositions are applied to a substrate to form an anti-reflective coating, and thereafter a photoresist material that is compatible with the anti-reflective coating is applied.

Abstract: THFA (tetrahydrofurfuryl alcohol) is employed as the active component of edge bead removal compositions negating the need for N-methylpyrrolidone and providing unexpected effectiveness for multilayer microelectronic edge beads having at least one highly polar aromatic polymer layer, particularly when such layer is adjacent to an acid-catalyzed photoresist.

Abstract: Positive working polyamic acid photoresist compositions are disclosed having improved high resolution upon image development and exhibiting stable photosensitivity and superior dielectric performance. The compositions comprise polyamic acid condensation products of an aromatic dianhydride and an aromatic di-primary amine wherein a percentage of the diamine comprises special dissolution inhibiting monomers. The compositions may be further improved by the presence of particular supplemental additives.

Abstract: Soluble conducting polymers from substituted polyanilines and large organic counterions are disclosed and used directly from solution in the manufacture of electronic devices.