Abstract: A copper electrode material comprising Cu and unavoidable impurities, wherein the content of the unavoidable impurities is 1 ppm by mass or less and the average crystal grain diameter is 100 ?m or less. A copper-containing electrode material having improved corrosion resistance is provided by the copper electrode material.

Abstract: In the present invention, a high-purity metallic tin suitable for use in an EUV exposure device is provided through use of an oxidation-resistant metallic tin, the oxidation-resistant metallic tin containing 99.995 mass % or more of tin, and unavoidable impurities, and the thickness of an oxide film being 2.0 nm or less when the surface of a cut face of the oxidation-resistant metallic tin is measured by AES.

Abstract: The purpose of the present invention is to provide a stannous oxide, which has excellent solubility and resistance to oxidation, from a stannous oxide powder comprising a stannous oxide and inevitable impurities, the stannous oxide powder having a stannous oxide content of 99.99 mass % or more in dry mass, a specific surface area of less than 0.5 m2/g, a D50 particle size of 20 to 60 ?m, and a half width of the particle size distribution of 5 to 30 ?m.

Abstract: Provided is a method for manufacturing high purity tin including: depositing electrodeposited tin on the surface of a cathode by electrowinning in an electrolytic bath in which a diaphragm is placed between an anode and the cathode, by using a raw material for tin as the anode and a leachate obtained by electrolytically leaching the raw material for tin in a sulfuric acid solution as an electrolytic solution, the electrolytic solution containing a smoothing agent for improving a surface property of the electrodeposited tin; discharging the electrolytic solution from the electrolytic bath such that lead in the discharged electrolytic solution is removed; and putting the electrolytic solution from which lead is removed back into the electrolytic bath.

Abstract: In the present invention, a high-purity metallic tin suitable for use in an EUV exposure device is provided through use of an oxidation-resistant metallic tin, the oxidation-resistant metallic tin containing 99.995 mass % or more of tin, and unavoidable impurities, and the thickness of an oxide film being 2.0 nm or less when the surface of a cut face of the oxidation-resistant metallic tin is measured by AES.

Abstract: A copper electrode material comprising Cu and unavoidable impurities, wherein the content of the unavoidable impurities is 1 ppm by mass or less and the average crystal grain diameter is 100 ?m or less. A copper-containing electrode material having improved corrosion resistance is provided by the copper electrode material.

Abstract: Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.

Abstract: Provided is high purity tin having purity of 5N (99.999% by mass), which can suppress generation of particles. According to the high purity tin, the number of particles each having a particle diameter of 0.5 ?m or more is 50,000 or less per a gram.

Abstract: The purpose of the present invention is to provide a stannous oxide, which has excellent solubility and resistance to oxidation, from a stannous oxide powder comprising a stannous oxide and inevitable impurities, the stannous oxide powder having a stannous oxide content of 99.99 mass % or more in dry mass, a specific surface area of less than 0.5 m2/g, a D50 particle size of 20 to 60 ?m, and a half width of the particle size distribution of 5 to 30 ?m.

Abstract: Provided is a high-purity tin product that does not contain undesirable carbonaceous impurities as a result of the following: a vacuum-packed high-purity metal article (vacuum-packed high-purity tin article) is obtained by vacuum packaging a high-purity metal (high-purity tin), at least a portion of a surface of a high-purity metal being covered with a fluorocarbon resin sheet; and the vacuum-packed high-purity metal article(vacuum-packed high-purity tin article) is obtained by vacuum packaging, with a vacuum packaging film, the high-purity metal in which at least a portion of a surface is covered with the fluorocarbon resin sheet.

Abstract: Provided is a method for producing stannous oxide, comprising a step of subjecting stannous sulfate to neutralization in an aqueous solution using ammonium carbonate or ammonium bicarbonate, and thereby precipitating stannous oxide. This production method is a novel means for producing stannous oxide in which chlorine, sulfur, sodium, and potassium are sufficiently reduced, and which has excellent solubility.

Abstract: Provided is a method for manufacturing high purity tin including: depositing electrodeposited tin on the surface of a cathode by electrowinning in an electrolytic bath in which a diaphragm is placed between an anode and the cathode, by using a raw material for tin as the anode and a leachate obtained by electrolytically leaching the raw material for tin in a sulfuric acid solution as an electrolytic solution, the electrolytic solution containing a smoothing agent for improving a surface property of the electrodeposited tin; discharging the electrolytic solution from the electrolytic bath such that lead in the discharged electrolytic solution is removed; and putting the electrolytic solution from which lead is removed back into the electrolytic bath.

Abstract: Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.

Abstract: Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.

Abstract: Provided is high purity tin having purity of 5N (99.999% by mass), which can suppress generation of particles. According to the high purity tin, the number of particles each having a particle diameter of 0.5 ?m or more is 50,000 or less per a gram.

Abstract: Provided is a high-purity tin product that does not contain undesirable carbonaceous impurities as a result of the following: a vacuum-packed high-purity metal article (vacuum-packed high-purity tin article) is obtained by vacuum packaging a high-purity metal (high-purity tin), at least a portion of a surface of a high-purity metal being covered with a fluorocarbon resin sheet; and the vacuum-packed high-purity metal article(vacuum-packed high-purity tin article) is obtained by vacuum packaging, with a vacuum packaging film, the high-purity metal in which at least a portion of a surface is covered with the fluorocarbon resin sheet.

Abstract: Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.

Abstract: The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

Abstract: The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

Abstract: Provided is a method for manufacturing high purity tin including: depositing electrodeposited tin on the surface of a cathode 11 by electrowinning in an electrolytic bath in which a diaphragm 14 is placed between an anode 12 and the cathode 11, by using a raw material for tin as the anode 12 and a leachate obtained by electrolytically leaching the raw material for tin in a sulfuric acid solution as an electrolytic solution, the electrolytic solution containing a smoothing agent for improving a surface property of the electrodeposited tin; discharging the electrolytic solution from the electrolytic bath such that lead in the discharged electrolytic solution is removed; and putting the electrolytic solution from which lead is removed back into the electrolytic bath.