Patents by Inventor Toru Imori

Toru Imori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190338431
    Abstract: Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.
    Type: Application
    Filed: July 17, 2019
    Publication date: November 7, 2019
    Applicant: JX Nippon Mining & Metals Corporation
    Inventors: Toru IMORI, Kouichi TAKEMOTO
  • Patent number: 10400342
    Abstract: Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: September 3, 2019
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Toru Imori, Kouichi Takemoto
  • Publication number: 20190153607
    Abstract: Provided is high purity tin having purity of 5N (99.999% by mass), which can suppress generation of particles. According to the high purity tin, the number of particles each having a particle diameter of 0.5 ?m or more is 50,000 or less per a gram.
    Type: Application
    Filed: March 2, 2017
    Publication date: May 23, 2019
    Applicant: JX Nippon Mining & Metals Corp.
    Inventors: Toru IMORI, Koichi TAKEMOTO
  • Publication number: 20190055077
    Abstract: Provided is a high-purity tin product that does not contain undesirable carbonaceous impurities as a result of the following: a vacuum-packed high-purity metal article (vacuum-packed high-purity tin article) is obtained by vacuum packaging a high-purity metal (high-purity tin), at least a portion of a surface of a high-purity metal being covered with a fluorocarbon resin sheet; and the vacuum-packed high-purity metal article(vacuum-packed high-purity tin article) is obtained by vacuum packaging, with a vacuum packaging film, the high-purity metal in which at least a portion of a surface is covered with the fluorocarbon resin sheet.
    Type: Application
    Filed: February 17, 2017
    Publication date: February 21, 2019
    Inventors: Toru IMORI, Koichi TAKEMOTO, Hideaki FUKUYO, Shiro TSUKAMOTO, Takahiro UCHIDA, Masatomi MURAKAMI
  • Publication number: 20180298506
    Abstract: Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.
    Type: Application
    Filed: October 12, 2016
    Publication date: October 18, 2018
    Inventors: TORU IMORI, KOUICHI TAKEMOTO
  • Patent number: 9823362
    Abstract: The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: November 21, 2017
    Assignee: JX NIPPON MINING & METALS CORPORATION
    Inventors: Masaomi Murakami, Makoto Mikami, Kouji Murakami, Akira Noda, Toru Imori
  • Publication number: 20170108594
    Abstract: The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.
    Type: Application
    Filed: December 27, 2016
    Publication date: April 20, 2017
    Inventors: Masaomi Murakami, Makoto Mikami, Kouji Murakami, Akira Noda, Toru Imori
  • Publication number: 20160097139
    Abstract: Provided is a method for manufacturing high purity tin including: depositing electrodeposited tin on the surface of a cathode 11 by electrowinning in an electrolytic bath in which a diaphragm 14 is placed between an anode 12 and the cathode 11, by using a raw material for tin as the anode 12 and a leachate obtained by electrolytically leaching the raw material for tin in a sulfuric acid solution as an electrolytic solution, the electrolytic solution containing a smoothing agent for improving a surface property of the electrodeposited tin; discharging the electrolytic solution from the electrolytic bath such that lead in the discharged electrolytic solution is removed; and putting the electrolytic solution from which lead is removed back into the electrolytic bath.
    Type: Application
    Filed: October 1, 2015
    Publication date: April 7, 2016
    Inventors: Kouichi Takemoto, Toru Imori, Takashi Ouchi, Hirofumi Takahashi
  • Patent number: 8814997
    Abstract: An electroless plating pretreatment agent that can retain stably Pd(II) over a long period of time in an organic solvent, an electroless plating method using the same that is capable of forming an electroless plated film having excellent adhesion, and an electroless plated object. The electroless plating pretreatment agent contains an organic palladium compound and a coordination compound having a functional group with a metal-capturing capability dissolved in an organic solvent, the coordination compound being selected from the group consisting of the imidazole analogs, polyethyleneamines, ethyleneimines and polyethyleneimines.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: August 26, 2014
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Toru Imori, Jun Suzuki, Ryu Murakami, Akihiro Aiba, Junichi Ito
  • Patent number: 8736057
    Abstract: A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as platinum, gold, silver and palladium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: May 27, 2014
    Assignee: Nippon Mining & Metals Co., Ltd.
    Inventors: Junichi Ito, Atsushi Yabe, Junnosuke Sekiguchi, Toru Imori
  • Patent number: 8697233
    Abstract: A metal-coated material comprising a metal-coated lipid bilayer vesicle and a preparation method thereof are provided. A metal-coated material comprising a metal-coated lipid bilayer vesicle having a network of siloxane bonding (Si—O—Si) on its surface. a method for preparing the metal-coated lipid bilayer vesicle comprising the following steps: (1) rendering the functional group(s) having the ability of carrying the metal catalyst to the surface of lipid bilayer vesicle having a network of siloxane bonding (Si—O—Si bonding) on its surface, at or after the formation, by self-organization, of the lipid bilayer vesicle; (2) immobilizing the metal catalyst on the surface of the lipid bilayer vesicle; (3) optionally, reducing the metal catalyst; and (4) performing electroless plating.
    Type: Grant
    Filed: October 31, 2006
    Date of Patent: April 15, 2014
    Assignees: Nara Institute of Science and Technology, JX Nippon Mining & Metals Corporation
    Inventors: Jun-ichi Kikuchi, Yoshihiro Sasaki, Mineo Hashizume, Toru Imori
  • Patent number: 8404035
    Abstract: An electroless copper plating solution that is favorable to improve the adhesion of a plating film and realizes uniform plating at a low temperature is characterized by containing a water-soluble nitrogen-containing polymer in an electroless copper plating solution, and preferably the above-mentioned electroless copper plating solution contains glyoxylic acid and phosphinic acid as reducing agents. The water-soluble nitrogen-containing polymer is preferably a polyacrylamide or a polyethyleneimine and, preferably, its weight average molecular weight (Mw) is at least 100,000 and Mw/Mn is 10.0 or less.
    Type: Grant
    Filed: July 30, 2004
    Date of Patent: March 26, 2013
    Assignee: Nippon Mining & Metals Co., Ltd.
    Inventors: Atsushi Yabe, Junnosuke Sekiguchi, Toru Imori, Yoshihisa Fujihira
  • Patent number: 8394508
    Abstract: A plated article has an alloy thin film formed on a substrate and having a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5 at % to 40 at % of the metal (A). The metal thin film formed by electroless displacement and reduction plating is a metal thin film having a thickness no greater than 10 nm and a resistivity no greater than 10 ??·cm. Preferably, the metal (B) has a barrier function with respect to a metal of the metal thin film.
    Type: Grant
    Filed: July 18, 2008
    Date of Patent: March 12, 2013
    Assignee: Nippon Mining & Metals Co., Ltd.
    Inventors: Atsushi Yabe, Junichi Ito, Yoshiyuki Hisumi, Junnosuke Sekiguchi, Toru Imori
  • Patent number: 8395264
    Abstract: A layer having a barrier function and catalytic power and excelling in formation uniformity and coverage of an ultrathin film, a pretreatment technique making it possible to form an ultrafine wiring and form a thin seed layer of uniform film thickness and a substrate including a thin seed layer formed with a uniform film thickness by electroless plating by using the aforementioned technique. A substrate in which an alloy film of one or more metal elements, having a barrier function and a metal element or metal elements, having catalytic power with respect to electroless plating is formed by chemical vapor deposition (CVD) on a base to a film thickness of 0.5 nm to 5 nm with a content ratio of the one or more metal element having a barrier function from 5 to 90 at. %.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: March 12, 2013
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Junichi Ito, Junnosuke Sekiguchi, Toru Imori
  • Patent number: 8390123
    Abstract: A ULSI micro-interconnect member having a substrate and a ULSI micro-interconnect formed on the substrate, wherein the ULSI micro-interconnect includes a barrier layer formed on the substrate and a ruthenium electroplating layer formed on the barrier layer; the ULSI micro-interconnect member further including a copper electroplating layer formed using the ruthenium electroplating layer as a seed layer; and a process for fabricating the ULSI micro-interconnect members.
    Type: Grant
    Filed: January 8, 2009
    Date of Patent: March 5, 2013
    Assignee: Nippon Mining & Metals Co., Ltd.
    Inventors: Junnosuke Sekiguchi, Toru Imori, Takashi Kinase
  • Patent number: 8333834
    Abstract: An object of the present invention is to provide a high-purity aqueous copper sulfonate solution and a simplified method of producing this solution. The aqueous copper sulfonate solution of the present invention is characterized in that the copper concentration therein is at least 90 g/L, the content of metal impurities is less than 10 mg/L as metal for each metal impurity, the content of chlorine is less than 10 mg/L, and the sulfonic acid is a sulfonic acid represented by the following general formula R—(SO3H)n (in the formula, R represents a lower alkyl group, lower alkylidene group, lower alkylene group, or hydroxyalkyl group and n represents 1 or 2).
    Type: Grant
    Filed: February 9, 2011
    Date of Patent: December 18, 2012
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Junnosuke Sekiguchi, Masaomi Murakami, Toru Imori
  • Patent number: 8318313
    Abstract: A metal nano particle can be supported and immobilized on a substrate uniformly. Thus, disclosed is a method for supporting a nano metal particle, which comprises applying a silane coupling agent having at least one functional group capable of capturing a metal (e.g., an imidazole group, an amino group, a diamino group, a mercapto group, and a vinyl group) in its molecule on a substrate, and then contacting the silane coupling agent with a nano particle of a metal (e.g., gold, platinum, silver, copper, palladium, nickel, cobalt), wherein the silane coupling agent may be produced by the reaction between an azole compound with an epoxysilane compound, and wherein the metal nano particle to be contacted with the silane coupling agent is preferably coated with an ionic fluid. Also disclosed is a substrate having a metal nano particle supported thereon, which is produced by the method.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: November 27, 2012
    Assignees: JX Nippon Mining & Metals Corporation, Nagoya University, Osaka University
    Inventors: Toru Imori, Yoshiyuki Hisumi, Junichi Ito, Tsukasa Torimoto, Kenichi Okazaki, Susumu Kuwabata
  • Patent number: 8283051
    Abstract: A plated product made of a substrate having formed thereon an alloy barrier thin film for preventing copper diffusion contains metal B, which has barrier properties in relation to copper and enables displacement plating with the copper ions contained in an electroless copper plating solution, and metal A, which tends to have less ionization than metal B in an electroless copper plating solution at a pH of 10 or higher; the alloy barrier thin film for preventing copper diffusion has a composition wherein metal A constitutes between 15 and 35 at % of the atoms; and a copper thin film is formed on the alloy barrier thin film by electroless plating using an electroless copper plating solution at a pH of 10 or higher.
    Type: Grant
    Filed: July 13, 2009
    Date of Patent: October 9, 2012
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Junichi Ito, Atsushi Yabe, Junnosuke Sekiguchi, Toru Imori, Yasuhiro Yamakoshi, Shinichiro Senda
  • Patent number: 8247301
    Abstract: A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as ruthenium, rhodium, and iridium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: August 21, 2012
    Assignee: Nippon Mining & Metals Co., Ltd.
    Inventors: Junichi Ito, Atsushi Yabe, Junnosuke Sekiguchi, Toru Imori
  • Publication number: 20120192758
    Abstract: It is an object of the present invention to provide an electroless plating pretreatment agent that can retain stably Pd(II) over a long period of time in an organic solvent, an electroless plating method using the same that is capable of forming an electroless plated film having excellent adhesion, and an electroless plated object. The object is achieved by an electroless plating pretreatment agent comprising an organic palladium compound and a coordination compound having a functional group with a metal-capturing capability dissolved in an organic solvent, the coordination compound being selected from the group consisting of the imidazole analogs, polyethyleneamines, ethyleneimines and polyethyleneimines.
    Type: Application
    Filed: March 14, 2011
    Publication date: August 2, 2012
    Inventors: Toru Imori, Jun Suzuki, Ryu Murakami, Akihiro Aiba, Junichi Ito