Abstract: A human-powered vehicle control device includes an electronic controller configured to control a motor to drive a transmission body with the motor and operate the transmission body with a derailleur to perform a shifting action that changes the transmission ratio in a case where a crank axle is stopped. The electronic controller includes a first control state in which the shifting action is performed and a second control state in which a driving force of the motor during the shifting action is reduced compared to the first control state. The electronic controller shifts the control state to the second control state in a case where a rider is riding the human-powered vehicle and the human-powered vehicle is stopped. The electronic controller shifts the control state from the second control state to the first control state in a case where a predetermined condition is satisfied.

Abstract: A medicament for preventive and/or therapeutic treatment of multiple sclerosis, especially a pain accompanying multiple sclerosis such as neuropathic pain, which contains a compound having a P2X4 receptor antagonist activity such as a compound represented by the general formula (IH), or a salt thereof, or a hydrate or solvate thereof as an active ingredient.

Abstract: A P2X4 receptor antagonist such as paroxetine, a diazepinedione derivative having the following formula (IX) is used as an agent for preventing or treating neuropathic pain associated with Guillain-Barré syndrome: wherein R1 is hydrogen, a C1-8 alkyl group, or the like; each of R2 and R3 is hydrogen, a C1-8 alkyl group, or the like; each of R4 and R5 is hydrogen or the like; and W is a five-membered or six-membered heterocyclic ring optionally having one or more substituents and comprising one to four nitrogen atoms as the members of the ring.

Abstract: There is provided an adhesion restraint method of a radionuclide to a carbon steel material of an atomic energy plant, in which an adhesion restraint effect of the radionuclide to the carbon steel material can continue for a longer term. A film forming apparatus is connected to a carbon steel purification system pipe of a BWR plant. A nickel formate aqueous solution and hydrazine are injected into a circulation pipe of the film forming apparatus. An aqueous solution including nickel formate and hydrazine is guided into a purification system pipe subjected to chemical decontamination, and a nickel metal film is formed on an inner surface of the pipe. A platinum ion aqueous solution and hydrazine are injected into the circulation pipe, and an aqueous solution including a platinum ion and hydrazine is supplied to the purification system pipe so as to adhere platinum to the surface of a nickel metal film. The film forming apparatus is detached from the purification system pipe, and the BWR plant is started.

Abstract: A P2X4 receptor antagonist such as paroxetine, a diazepinedione derivative having the following formula (IX) is used as an agent for preventing or treating neuropathic pain associated with Guillain-Barré syndrome: wherein R1 is hydrogen, a C1-8 alkyl group, or the like; each of R2 and R3 is hydrogen, a C1-8 alkyl group, or the like; each of R4 and R5 is hydrogen or the like; and W is a five-membered or six-membered heterocyclic ring optionally having one or more substituents and comprising one to four nitrogen atoms as the members of the ring.

Abstract: A method for manufacturing a honeycomb structure includes: preparing a base material sheet; forming a plurality of strips by forming a plurality of slits parallel to each other at regular intervals in the base material sheet; twisting each of the strips around an axis along which the strip extends; temporarily forming a plurality of cell areas defined by the strips by temporarily, partially bonding each of the twisted strips to another strip adjacent thereto; and completing the form of the cell areas by performing permanent bonding on the temporarily bonded portions by inserting a mold into the temporarily formed cell areas and heating the strips.

Abstract: A method for manufacturing a honeycomb structure includes: preparing a base material sheet; forming a plurality of strips by forming a plurality of slits parallel to each other at regular intervals in the base material sheet; twisting each of the strips around an axis along which the strip extends; temporarily forming a plurality of cell areas defined by the strips by temporarily, partially bonding each of the twisted strips to another strip adjacent thereto; and completing the form of the cell areas by performing permanent bonding on the temporarily bonded portions by inserting a mold into the temporarily formed cell areas and heating the strips.

Abstract: The present invention ensures a good bonding state between the electrode terminals of electronic components and the electrodes of a substrate, and achieves an increase in productivity and a downsizing of the substrate. The present invention includes: an applying step of applying a metal fine powder paste on each of multiple electrodes that are provided on a substrate; a component placing step of placing multiple electronic components with different heights, on the multiple electrodes, respectively; an organic film placing step of placing an organic film on the multiple electronic components; an organic film compressing step of applying a first pressure to the electronic component side with a pressing member and equalizing the height of the organic film; and a bonding step of applying a second pressure to the electronic component side with a compressing member on heating for a predetermined time and sintering the metal fine powder paste.

Abstract: An element pressing apparatus includes: a base casing having first and second bases couplable to or separable from each other to form an arrangement space where a board and a plurality of electronic components having different heights are arranged while the first and second bases are coupled to each other; oil encapsulated in the arrangement space; an oil seal member deformed depending on a pressure of the oil; and a hydraulic pressure change portion that changes the pressure of the oil, wherein the pressure of the oil changes by the hydraulic pressure change portion to press the oil seal member to a plurality of electronic components and press the electrode terminals against the electrodes when the board and a plurality of electronic components are arranged in the arrangement space by positioning and placing each of the electrode terminals on each of the electrodes.

Abstract: An element pressing apparatus includes: a base casing having first and second bases couplable to or separable from each other to form an arrangement space where a board and a plurality of electronic components having different heights are arranged while the first and second bases are coupled to each other; oil encapsulated in the arrangement space; an oil seal member deformed depending on a pressure of the oil; and a hydraulic pressure change portion that changes the pressure of the oil, wherein the pressure of the oil changes by the hydraulic pressure change portion to press the oil seal member to a plurality of electronic components and press the electrode terminals against the electrodes when the board and a plurality of electronic components are arranged in the arrangement space by positioning and placing each of the electrode terminals on each of the electrodes.

Abstract: The present invention ensures a good bonding state between the electrode terminals of electronic components and the electrodes of a substrate, and achieves an increase in productivity and a downsizing of the substrate. The present invention includes: an applying step of applying a metal fine powder paste on each of multiple electrodes that are provided on a substrate; a component placing step of placing multiple electronic components with different heights, on the multiple electrodes, respectively; an organic film placing step of placing an organic film on the multiple electronic components; an organic film compressing step of applying a first pressure to the electronic component side with a pressing member and equalizing the height of the organic film; and a bonding step of applying a second pressure to the electronic component side with a compressing member on heating for a predetermined time and sintering the metal fine powder paste.

Abstract: A P2X4 receptor antagonist such as paroxetine, a diazepinedione derivative having the following formula (IX) is used as an agent for preventing or treating neuropathic pain associated with Guillain-Barré syndrome: wherein R1 is hydrogen, a C1-8 alkyl group, or the like; each of R2 and R3 is hydrogen, a C1-8 alkyl group, or the like; each of R4 and R5 is hydrogen or the like; and W is a five-membered or six-membered heterocyclic ring optionally having one or more substituents and comprising one to four nitrogen atoms as the members of the ring.

Abstract: A first transistor includes a first gate insulating film, a first gate electrode, and a first sidewall. A second transistor includes a second gate insulating film, a second gate electrode, and a second sidewall. A capacitive element is connected to one side of source and drain regions of the second transistor. The first gate insulating film has the same thickness as that of the second gate insulating film, and the first gate electrode has the same thickness of that of the second gate electrode. The width of the second sidewall is larger than the width of the first sidewall.

Abstract: A recombination apparatus is provided to an off-gas system of a boiling water nuclear plant. An off-gas system pipe connected to a condenser is connected to the recombination apparatus. A catalyst layer filled with a catalyst for recombining hydrogen and oxygen is disposed in the recombination apparatus. The recombination catalyst has a percentage of the number of Pt particles whose diameters are in a range from more than 1 nm to not more than 3 nm to the numbers of Pt particles whose diameters are in a range from more than 0 nm to not more than 20 nm, falling within a range from 20 to 100%. The condenser discharges gas containing an organosilicon compound (ex. D5), hydrogen, and oxygen, which is introduced to the recombination apparatus. Use of the above recombination catalyst can improve the performance of recombining hydrogen and oxygen more than conventional catalysts and the initial performance of the catalyst can be maintained for a longer period of time.

Abstract: A first transistor includes a first gate insulating film, a first gate electrode, and a first sidewall. A second transistor includes a second gate insulating film, a second gate electrode, and a second sidewall. A capacitive element is connected to one side of source and drain regions of the second transistor. The first gate insulating film has the same thickness as that of the second gate insulating film, and the first gate electrode has the same thickness of that of the second gate electrode. The width of the second sidewall is larger than the width of the first sidewall.

Abstract: An N-substituted N-(4-piperininyl)amide derivative represented by the following formula (I): (wherein R1 represents C1-6 alkyl, furyl, etc.; R2 represents amino, acetylamino, ureido, etc.; R3 represents hydrogen, C2-8 alkoxycarbonyl, etc.; R4 represents optionally substituted phenyl, etc.; R5 represents hydroxyl, benzyloxy, etc.; R6 represents hydrogen or methyl; and m is 1 or 2) or a salt of the derivative, and an analgesic containing the derivative or salt.

Abstract: Shift register electrodes are formed in an imaging area and a peripheral area through use of a single layer of conductive film, and a thick insulating film is deposited over those electrodes and planarized. The thick insulating film overlying the shift register electrodes in the peripheral area is kept as it is and on the other hand, the thick insulating film overlying the shift register electrodes is etched to just fill gaps between the shift register electrodes with the film, thereby allowing a light shielding metal layer overlying the shift register electrodes in the peripheral area and insulating films sandwiched therebetween to be formed without discontinuity. Since metal interconnect lines in the peripheral area have a thick and planarized insulating film formed thereunder, parasitic capacitance between diffusion layers/electrodes and the metal interconnect lines can be reduced, leading to reduction in power consumption of image sensor.

Abstract: Shift register electrodes are formed in an imaging area and a peripheral area through use of a single layer of conductive film, and a thick insulating film is deposited over those electrodes and planarized. The thick insulating film overlying the shift register electrodes in the peripheral area is kept as it is and on the other hand, the thick insulating film overlying the shift register electrodes is etched to just fill gaps between the shift register electrodes with the film, thereby allowing a light shielding metal layer overlying the shift register electrodes in the peripheral area and insulating films sandwiched therebetween to be formed without discontinuity. Since metal interconnect lines in the peripheral area have a thick and planarized insulating film formed thereunder, parasitic capacitance between diffusion layers/electrodes and the metal interconnect lines can be reduced, leading to reduction in power consumption of image sensor.

Abstract: A solid state imaging pickup device with a single-layer electrode structure which eliminates the release area at the terminal part of the charge transfer electrodes by surrounding the charge transfer electrodes with a dummy pattern, or with a pattern formed by connecting the charge transfer electrodes of a certain phase with each other at the outermost periphery. Surrounding the charge transfer electrode improves embedding performance when an insulating film is re-flowed for flattening inter-electrode gaps. This enables formation of a good metal wire or shielding film with no step-cut, thus improving the reliability of a solid state imaging pickup device.

Abstract: A method for producing a dichloropentafluoropropane, which comprises reacting dichlorofluoromethane (R21) with tetrafluoroethylene (4F) in the presence of a Lewis acid catalyst for addition reaction to obtain dichloropentafluoropropane, wherein a halide containing at least one element selected from the group consisting of Sb, Nb, Ta, B, Ga, In, Zr, Hf and Ti, or AlBr.sub.3, or AlI.sub.3, is used as the Lewis acid.