Abstract: A single crystal AlN substrate includes a first surface and a second surface as an opposite side surface of the first surface. The first surface has a flat surface as an Al-polar surface and an inclined surface formed from an outer edge of the flat surface to a side surface. The second surface is an N-polar surface. The inclined surface is formed up to a position having a distance from an end portion of the single crystal AlN substrate in a direction along the flat surface of 0.45 mm or more and 0.75 mm or less, and is formed up to a position having a distance from the flat surface in a direction perpendicular to the flat surface of 0.2 mm or more and 0.3 mm or less.

Abstract: A feedback control device determines a first target angular velocity that is a target angular velocity of an output angular velocity of the target device, using a first transfer function, determines a control input to the target device, based on a difference between the first target angular velocity and the output angular velocity, determines, based on the operation input, a second target angular velocity that is the target angular velocity requested by an operator, determines a degree of comfort of the operator, based on a difference between the output angular velocity and the second target angular velocity, sequentially accumulates the first target angular velocity, the degree of comfort, and a target degree of comfort in a database, and adjusts a first moment of inertia in such a way as to reduce a difference between the target degree of comfort and the degree of comfort, using data accumulated in the database.

Abstract: An object of the present invention is to provide an ultraviolet semiconductor light-emitting element that allows a user to easily confirm whether or not it is driven to emit the deep ultraviolet light. An ultraviolet semiconductor light-emitting element according to the present invention includes a single crystal AlN substrate, an n-type AlGaN layer, an active layer, and a p-type AlGaN layer. The n-type AlGaN layer is formed on the single crystal AlN substrate. The active layer is formed on the n-type AlGaN layer. The active layer has a light emission peak wavelength of 250 nm or more and 280 nm or less. The p-type AlGaN layer is formed on the active layer. The C concentration in the single crystal AlN substrate is 3×1017 atoms/cm3 or more.

Abstract: An optical semiconductor element includes a single crystal AlN substrate; an n-type semiconductor layer having an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition of the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer grown on the n-type semiconductor layer and having a multiple quantum well structure which includes a plurality of well layers and barrier layers; and a p-type semiconductor layer which is grown on the active layer. The single crystal AlN substrate has a dislocation density being 106 cm?2 or less.

Abstract: An optical semiconductor element includes a single crystal AlN substrate; an n-type semiconductor layer having an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition of the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer grown on the n-type semiconductor layer and having a multiple quantum well structure which includes a plurality of well layers and barrier layers; and a p-type semiconductor layer which is grown on the active layer. The single crystal AlN substrate has a dislocation density being 106 cm?2 or less.

Abstract: An optical semiconductor element comprises: an AlN substrate; an n-type semiconductor layer composed of an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition or the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer which is grown on the n-type semiconductor layer; and a p-type semiconductor layer which is grown on the active layer.

Abstract: A group III nitride laminate having monocrystalline n-type AlxGa1-xN (0.7?X?1.0) and an electrode is provided. The group III nitride laminate is characterized in that an n-type contact layer made of (AlYGa1-Y)2O3 (0.0?Y<0.3) is provided between the monocrystalline n-type AlxGa1-xN (0.7?X?1.0) and the electrode. Furthermore, a vertical semiconductor device including the above-described group III nitride laminate is provided.

Abstract: A vertical ultraviolet light-emitting diode has, on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type AlXGa1-XN (wherein X is a rational number satisfying 0.5?X?1.0), an active layer, a layer represented by p-type AlYGa1-YN (wherein Y is a rational number satisfying 0.5?Y?1.0) and a p-type GaN layer in this order and which is equipped with a p-electrode formed on the p-type GaN layer and an n-electrode partially provided on a plane on the opposite side to the aluminum polar plane of the n-type AlN single crystal substrate, preferably an n-electrode formed by providing at least one opening functioning as a light extraction window, wherein the shortest distance between the n-electrode and an arbitrary point in a portion where the n-electrode is not provided, is not more than 400 ?m.

Abstract: Provided is a group III nitride stacked body having an n-type AlXGa1-XN (0.5?X<1) layer formed on an AlN single crystal substrate while being lattice-matched to the AlN single crystal substrate wherein the n-type AlXGa1-XN (0.5?X<1) layer has at least a stacked structure in which a first n-type AlX1Ga1-X1N (0.5?X1<1) layer, a second n-type AlX2Ga1-X2N (0.5?X2<1) layer, and a third n-type AlX3Ga1-X3N (0.5?X3<1) layer are stacked in this order from the AlN single crystal substrate side, and X1, X2, and X3 indicating the Al compositions of the respective layers satisfy 0<|X1?X2|?0.1, and satisfy 0<|X2?X3|?0.1.

Abstract: A group III nitride laminate having monocrystalline n-type AlxGa1-xN (0.7?X?1.0) and an electrode is provided. The group III nitride laminate is characterized in that an n-type contact layer made of (AlYGa1-Y)2O3 (0.0?Y<0.3) is provided between the monocrystalline n-type AlxGa1-xN (0.7?X?1.0) and the electrode. Furthermore, a vertical semiconductor device including the above-described group III nitride laminate is provided.

Abstract: Provided is a group III nitride stacked body having an n-type AlXGa1-XN (0.5?X<1) layer formed on an AlN single crystal substrate while being lattice-matched to the AlN single crystal substrate wherein the n-type AlXGa1-XN (0.5?X<1) layer has at least a stacked structure in which a first n-type AlX1Ga1-X1N (0.5?X1<1) layer, a second n-type AlX2Ga1-X2N (0.5?X2<1) layer, and a third n-type AlX3Ga1-X3N (0.5?X3<1) layer are stacked in this order from the AlN single crystal substrate side, and X1, X2, and X3 indicating the Al compositions of the respective layers satisfy 0<|X1?X2|?0.1, and satisfy 0<|X2?X3|?0.1.

Abstract: An optical semiconductor element comprises: an AlN substrate; an n-type semiconductor layer composed of an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition or the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer which is grown on the n-type semiconductor layer; and a p-type semiconductor layer which is grown on the active layer.

Abstract: A group III nitride laminate includes, on an AlN single crystal substrate, a multilayer structure having an AlXGa1-XN layer (0<X?1) that is lattice-matched to the AlN single crystal substrate, and wherein a GaN layer that has a film thickness of 5-400 nm and a dislocation density of less than 5×1010 cm?2 or a half width of the X-ray omega rocking curve of 50-300 seconds is laminated on the AlXGa1-XN layer (0<X?1).

Abstract: A vertical ultraviolet light-emitting diode has, on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type AlXGa1-XN (wherein X is a rational number satisfying 0.5?X?1.0), an active layer, a layer represented by p-type AlYGa1-YN (wherein Y is a rational number satisfying 0.5?Y?1.0) and a p-type GaN layer in this order and which is equipped with a p-electrode formed on the p-type GaN layer and an n-electrode partially provided on a plane on the opposite side to the aluminum polar plane of the n-type AlN single crystal substrate, preferably an n-electrode formed by providing at least one opening functioning as a light extraction window, wherein the shortest distance between the n-electrode and an arbitrary point in a portion where the n-electrode is not provided, is not more than 400 ?m.

Abstract: There are provided: a solid polymer power generation or electrolysis method that does not require injection of energy from the outside and maintenance of a high temperature, and is capable of converting carbon dioxide to a useful hydrocarbon while producing energy, controlling the production amounts of the hydrocarbons or the like and a ratio sorted by kind of the hydrocarbons, improving utilization efficiency of a product, and simplifying equipment for separation and recovery; and a system for implementing the solid polymer power generation or electrolysis method. Carbon dioxide is supplied to the side of one electrode 111 of a reactor 110 having a membrane electrode assembly 113, hydrogen is supplied to the side of the other electrode 112, and the amounts of the hydrocarbons produced per unit time and the ratio sorted by kind of the hydrocarbons are changed by controlling a power generation voltage of the reactor 110.

Abstract: A group III nitride laminate includes, on an AlN single crystal substrate, a multilayer structure having an AlxGa1?xN layer (0<X?1) that is lattice-matched to the AlN single crystal substrate, and wherein a GaN layer that has a film thickness of 5-400 nm and a dislocation density of less than 5×1010 cm?2 or a half width of the X-ray omega rocking curve of 50-300 seconds is laminated on the AlxGa1?xN layer (0<X?1).

Abstract: The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

Abstract: A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 ?m; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.

Abstract: A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×1017 to 1×1020 cm?3 and a dislocation density of 106 cm?2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.

Abstract: A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 ?m; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.