Patents by Inventor Toru Kinoshita

Toru Kinoshita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210249555
    Abstract: An optical semiconductor element includes a single crystal AlN substrate; an n-type semiconductor layer having an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition of the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer grown on the n-type semiconductor layer and having a multiple quantum well structure which includes a plurality of well layers and barrier layers; and a p-type semiconductor layer which is grown on the active layer. The single crystal AlN substrate has a dislocation density being 106 cm?2 or less.
    Type: Application
    Filed: April 30, 2021
    Publication date: August 12, 2021
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventor: Toru KINOSHITA
  • Patent number: 11031522
    Abstract: An optical semiconductor element comprises: an AlN substrate; an n-type semiconductor layer composed of an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition or the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer which is grown on the n-type semiconductor layer; and a p-type semiconductor layer which is grown on the active layer.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: June 8, 2021
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventor: Toru Kinoshita
  • Patent number: 10731274
    Abstract: A group III nitride laminate having monocrystalline n-type AlxGa1-xN (0.7?X?1.0) and an electrode is provided. The group III nitride laminate is characterized in that an n-type contact layer made of (AlYGa1-Y)2O3 (0.0?Y<0.3) is provided between the monocrystalline n-type AlxGa1-xN (0.7?X?1.0) and the electrode. Furthermore, a vertical semiconductor device including the above-described group III nitride laminate is provided.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: August 4, 2020
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Yoshinao Kumagai, Hisashi Murakami, Toru Kinoshita
  • Patent number: 10665753
    Abstract: A vertical ultraviolet light-emitting diode has, on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type AlXGa1-XN (wherein X is a rational number satisfying 0.5?X?1.0), an active layer, a layer represented by p-type AlYGa1-YN (wherein Y is a rational number satisfying 0.5?Y?1.0) and a p-type GaN layer in this order and which is equipped with a p-electrode formed on the p-type GaN layer and an n-electrode partially provided on a plane on the opposite side to the aluminum polar plane of the n-type AlN single crystal substrate, preferably an n-electrode formed by providing at least one opening functioning as a light extraction window, wherein the shortest distance between the n-electrode and an arbitrary point in a portion where the n-electrode is not provided, is not more than 400 ?m.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: May 26, 2020
    Assignee: Stanley Electric Co., Ltd.
    Inventor: Toru Kinoshita
  • Patent number: 10644199
    Abstract: Provided is a group III nitride stacked body having an n-type AlXGa1-XN (0.5?X<1) layer formed on an AlN single crystal substrate while being lattice-matched to the AlN single crystal substrate wherein the n-type AlXGa1-XN (0.5?X<1) layer has at least a stacked structure in which a first n-type AlX1Ga1-X1N (0.5?X1<1) layer, a second n-type AlX2Ga1-X2N (0.5?X2<1) layer, and a third n-type AlX3Ga1-X3N (0.5?X3<1) layer are stacked in this order from the AlN single crystal substrate side, and X1, X2, and X3 indicating the Al compositions of the respective layers satisfy 0<|X1?X2|?0.1, and satisfy 0<|X2?X3|?0.1.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: May 5, 2020
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Toru Kinoshita, Toshiyuki Obata
  • Publication number: 20190323146
    Abstract: A group III nitride laminate having monocrystalline n-type AlxGa1-xN (0.7?X?1.0) and an electrode is provided. The group III nitride laminate is characterized in that an n-type contact layer made of (AlYGa1-Y)2O3 (0.0?Y<0.3) is provided between the monocrystalline n-type AlxGa1-xN (0.7?X?1.0) and the electrode. Furthermore, a vertical semiconductor device including the above-described group III nitride laminate is provided.
    Type: Application
    Filed: June 19, 2017
    Publication date: October 24, 2019
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Yoshinao KUMAGAI, Hisashi MURAKAMI, Toru KINOSHITA
  • Publication number: 20190229237
    Abstract: Provided is a group III nitride stacked body having an n-type AlXGa1-XN (0.5?X<1) layer formed on an AlN single crystal substrate while being lattice-matched to the AlN single crystal substrate wherein the n-type AlXGa1-XN (0.5?X<1) layer has at least a stacked structure in which a first n-type AlX1Ga1-X1N (0.5?X1<1) layer, a second n-type AlX2Ga1-X2N (0.5?X2<1) layer, and a third n-type AlX3Ga1-X3N (0.5?X3<1) layer are stacked in this order from the AlN single crystal substrate side, and X1, X2, and X3 indicating the Al compositions of the respective layers satisfy 0<|X1?X2|?0.1, and satisfy 0<|X2?X3|?0.1.
    Type: Application
    Filed: August 28, 2017
    Publication date: July 25, 2019
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Toru KINOSHITA, Toshiyuki OBATA
  • Publication number: 20190189834
    Abstract: An optical semiconductor element comprises: an AlN substrate; an n-type semiconductor layer composed of an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition or the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer which is grown on the n-type semiconductor layer; and a p-type semiconductor layer which is grown on the active layer.
    Type: Application
    Filed: December 7, 2018
    Publication date: June 20, 2019
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventor: Toru KINOSHITA
  • Patent number: 10224458
    Abstract: A group III nitride laminate includes, on an AlN single crystal substrate, a multilayer structure having an AlXGa1-XN layer (0<X?1) that is lattice-matched to the AlN single crystal substrate, and wherein a GaN layer that has a film thickness of 5-400 nm and a dislocation density of less than 5×1010 cm?2 or a half width of the X-ray omega rocking curve of 50-300 seconds is laminated on the AlXGa1-XN layer (0<X?1).
    Type: Grant
    Filed: March 3, 2016
    Date of Patent: March 5, 2019
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Hiroshi Furuya, Toshiyuki Obata, Toru Kinoshita
  • Publication number: 20190067523
    Abstract: A vertical ultraviolet light-emitting diode has, on an aluminum polar plane of an n-type AlN single crystal substrate, a layer represented by n-type AlXGa1-XN (wherein X is a rational number satisfying 0.5?X?1.0), an active layer, a layer represented by p-type AlYGa1-YN (wherein Y is a rational number satisfying 0.5?Y?1.0) and a p-type GaN layer in this order and which is equipped with a p-electrode formed on the p-type GaN layer and an n-electrode partially provided on a plane on the opposite side to the aluminum polar plane of the n-type AlN single crystal substrate, preferably an n-electrode formed by providing at least one opening functioning as a light extraction window, wherein the shortest distance between the n-electrode and an arbitrary point in a portion where the n-electrode is not provided, is not more than 400 ?m.
    Type: Application
    Filed: February 21, 2017
    Publication date: February 28, 2019
    Applicant: Stanley Electric Co., Ltd.
    Inventor: Toru Kinoshita
  • Patent number: 9954239
    Abstract: There are provided: a solid polymer power generation or electrolysis method that does not require injection of energy from the outside and maintenance of a high temperature, and is capable of converting carbon dioxide to a useful hydrocarbon while producing energy, controlling the production amounts of the hydrocarbons or the like and a ratio sorted by kind of the hydrocarbons, improving utilization efficiency of a product, and simplifying equipment for separation and recovery; and a system for implementing the solid polymer power generation or electrolysis method. Carbon dioxide is supplied to the side of one electrode 111 of a reactor 110 having a membrane electrode assembly 113, hydrogen is supplied to the side of the other electrode 112, and the amounts of the hydrocarbons produced per unit time and the ratio sorted by kind of the hydrocarbons are changed by controlling a power generation voltage of the reactor 110.
    Type: Grant
    Filed: September 10, 2014
    Date of Patent: April 24, 2018
    Assignee: JAPAN AEROSPACE EXPLORATION AGENCY
    Inventors: Yoshitsugu Sone, Masato Sakurai, Asuka Shima, Minoru Umeda, Tetsuya Nakabeppu, Ryota Shinozaki, Toru Kinoshita
  • Publication number: 20180033913
    Abstract: A group III nitride laminate includes, on an AlN single crystal substrate, a multilayer structure having an AlxGa1?xN layer (0<X?1) that is lattice-matched to the AlN single crystal substrate, and wherein a GaN layer that has a film thickness of 5-400 nm and a dislocation density of less than 5×1010 cm?2 or a half width of the X-ray omega rocking curve of 50-300 seconds is laminated on the AlxGa1?xN layer (0<X?1).
    Type: Application
    Filed: March 3, 2016
    Publication date: February 1, 2018
    Applicant: Stanley Electric Co., Ltd.
    Inventors: Hiroshi Furuya, Toshiyuki Obata, Toru Kinoshita
  • Patent number: 9840790
    Abstract: The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: December 12, 2017
    Assignees: Hexatech, Inc., National University Corporation Tokyo University of Agriculture and Technology, Tokuyama Corporation
    Inventors: Akinori Koukitu, Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Yuki Kubota, Rafael F. Dalmau, Jinqiao Xie, Baxter F. Moody, Raoul Schlesser, Zlatko Sitar
  • Patent number: 9806205
    Abstract: A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 ?m; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.
    Type: Grant
    Filed: July 21, 2015
    Date of Patent: October 31, 2017
    Assignee: Tokuyama Corporation
    Inventors: Toru Kinoshita, Toru Nagashima
  • Patent number: 9748410
    Abstract: A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×1017 to 1×1020 cm?3 and a dislocation density of 106 cm?2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.
    Type: Grant
    Filed: October 15, 2014
    Date of Patent: August 29, 2017
    Assignee: Tokuyama Corporation
    Inventors: Toru Kinoshita, Toshiyuki Obata, Toru Nagashima
  • Publication number: 20170222064
    Abstract: A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 ?m; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.
    Type: Application
    Filed: July 21, 2015
    Publication date: August 3, 2017
    Applicant: Tokuyama Corporation
    Inventors: Toru Kinoshita, Toru Nagashima
  • Patent number: 9487697
    Abstract: A composite wavelength conversion powder and a resin composition containing a composite wavelength conversion powder which have high utilization efficiency of light and high utilization efficiency of a constituent material, and are able to make highly efficient light emission and high reliability compatible are provided. The composite wavelength conversion powder is formed by dispersing phosphor particles having a refractive index of 1.6 or more in matrix particles containing fine magnesium fluoride particles or fine calcium fluoride particles.
    Type: Grant
    Filed: September 19, 2013
    Date of Patent: November 8, 2016
    Assignee: Sumitomo Osaka Cement Co., Ltd.
    Inventors: Toru Kinoshita, Tsutomu Nozoe
  • Publication number: 20160254391
    Abstract: A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×1017 to 1×1020 cm?3 and a dislocation density of 106 cm?2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.
    Type: Application
    Filed: October 15, 2014
    Publication date: September 1, 2016
    Applicant: TOKUYAMA CORPORATION
    Inventors: Toru Kinoshita, Toshiyuki Obata, Toru Nagashima
  • Publication number: 20160226090
    Abstract: There are provided: a solid polymer power generation or electrolysis method that does not require injection of energy from the outside and maintenance of a high temperature, and is capable of converting carbon dioxide to a useful hydrocarbon while producing energy, controlling the production amounts of the hydrocarbons or the like and a ratio sorted by kind of the hydrocarbons, improving utilization efficiency of a product, and simplifying equipment for separation and recovery; and a system for implementing the solid polymer power generation or electrolysis method. Carbon dioxide is supplied to the side of one electrode 111 of a reactor 110 having a membrane electrode assembly 113, hydrogen is supplied to the side of the other electrode 112, and the amounts of the hydrocarbons produced per unit time and the ratio sorted by kind of the hydrocarbons are changed by controlling a power generation voltage of the reactor 110.
    Type: Application
    Filed: September 10, 2014
    Publication date: August 4, 2016
    Applicant: Japan Aerospace Exploration Agency
    Inventors: Yoshitsugu Sone, Masato Sakurai, Asuka Shima, Minoru Umeda, Tetsuya Nakabeppu, Ryota Shinozaki, Toru Kinoshita
  • Patent number: 9343525
    Abstract: A substrate includes aluminum nitride, wherein the aluminum nitride substrate has on at least a surface thereof an aluminum nitride single-crystal layer having as a principal plane a plane that is inclined 0.05° to 0.40° in the m-axis direction from the (0001) plane of a wurzite structure.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: May 17, 2016
    Assignee: Tokuyama Corporation
    Inventors: Keiichiro Hironaka, Toru Kinoshita