Abstract: An image pickup apparatus performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with one another. In a first period in which a photoelectric conversion unit of at least one of the pixels stores charge, signals based on charges stored in holding units of the pixels are successively output to output lines. In a second period after the output of the signals from the pixels is terminated, the holding units of the pixels hold charge.

Abstract: The imaging apparatuses according to the embodiments perform an operation of outputting a plurality of signals from pixels to an output line a plurality of times. In each operation, both of first and second transfer switches are brought into an on state so that a discharge operation of discharging charge of a photoelectric conversion unit through a holding unit is performed. In a first period, the photoelectric conversion unit of at least one of the pixels accumulates charge. The operation performed a plurality of times includes a first operation and a second operation to be performed after the first operation. After the output operation in the first operation is terminated, the discharge operation in the second operation is performed.

Abstract: An image capturing apparatus performs a global electronic shutter operation in which a plurality of pixels are exposed during the same exposure period. In a first period, charge is accumulated by a photoelectric conversion unit. In a second period, accumulation units of a plurality of pixels accumulate charge. A ratio of saturation charge quantity of the photoelectric conversion unit to saturation charge quantity of the accumulation unit has a certain relationship with a ratio of a length of the first period to the sum of the length of the first period and the length of the second period.

Abstract: At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.

Abstract: A photoelectric conversion apparatus includes a pixel. The pixel includes a transfer transistor, a reset transistor, an amplification transistor, and a selection transistor. The photoelectric conversion apparatus includes a control line, a voltage control unit, and a current source. The control line is electrically connected to a source of the amplification transistor. The voltage control unit controls the voltage of the control line. The current source outputs a reference current. A path of a current from the amplification transistor is separated from a path of the reference current. The photoelectric conversion apparatus includes a comparison unit configured to compare the current from the amplification transistor with the reference current. During a period in which a transistor connected to the gate of the amplification transistor is in a conductive state, the selection transistor is in a non-conductive state.

Abstract: Provided is a photoelectric conversion apparatus including a photoelectric conversion element. The photoelectric conversion element includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region has a shape in plan view including a base portion containing a third semiconductor region in plan view and a first protrusion and a second protrusion each connected to the base portion. When an axial length of the first protrusion is defined as L1, a distance from a connected portion between the first protrusion and the base portion to the third semiconductor region is defined as L2, an axial length of the second protrusion is defined as L3, and a distance from a connected portion between the second protrusion and the base portion to the third semiconductor region is defined as L4, relationships of L1>L3 and L2<L4 are satisfied.

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

Abstract: An image capturing apparatus performs a global electronic shutter operation in which a plurality of pixels are exposed during the same exposure period. In a first period, charge is accumulated by a photoelectric conversion unit. In a second period, accumulation units of a plurality of pixels accumulate charge. A ratio of saturation charge quantity of the photoelectric conversion unit to saturation charge quantity of the accumulation unit has a certain relationship with a ratio of a length of the first period to the sum of the length of the first period and the length of the second period.

Abstract: At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.

Abstract: If separations between photoelectric conversion elements are different from each other, charge leaking into adjacent photoelectric conversion elements varies. A photoelectric conversion apparatus of the present invention includes a first semiconductor region that can be potential barriers against signal charge, between first and second photoelectric conversion elements. Further, the apparatus includes a second semiconductor region that has the same depth as the depth of the first semiconductor region and a width narrower than the width of the first semiconductor region and can be potential barriers against the signal charge, between the first and a third photoelectric conversion element. Moreover, the apparatus includes a third semiconductor region that can be potential barriers against the signal charge under the first semiconductor region and the second semiconductor region.

Abstract: At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.

Abstract: A method of manufacturing an active pixel sensor having a plurality of pixels, each of the pixels having a photodiode formed by a part of a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type, and a transfer transistor for transferring a charge carrier from the photodiode, includes the steps of preparing a substrate on which the first semiconductor region of the first conductive type is formed, forming a mask to form the second semiconductor region on the substrate, forming the second semiconductor region using the mask, and forming a gate of the transferring transistor after forming the second semiconductor region. The gate of the transferring transistor overlaps the second semiconductor region in a planar view.

Abstract: A photo-electric conversion device comprises a pixel array in which a plurality of pixels are arrayed, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion, a signal line which is connected to the plurality of pixels and transmits a signal output from each pixel, a load transistor including a drain connected to the signal line, and a source connected to a first reference potential, and a capacitance including a first electrode connected to a gate of the load transistor, and a second electrode connected to a second reference potential, wherein the signal line is arranged not to overlap the first electrode when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter.

Abstract: An image pickup apparatus includes a plurality of pixels each including a read-out node to which an electric charge generated in a photoelectric conversion unit is transferred, an output unit configured to convert the electric charge transferred to the read-out node into a voltage and output the resultant voltage to a signal line, and a switch including a first node electrically connected to the read-out node. Each switch includes a second node different from the first node, and a particular number of second nodes are electrically connected to a common bypass wiring.

Abstract: A photoelectric conversion device includes a photoelectric converter, a transistor having a gate to which a voltage corresponding to charges generated by the photoelectric converter is supplied, a control line connected to a first main electrode of the transistor, and a readout unit configured to read out a signal corresponding to a voltage of the gate, and a voltage controller configured to change a voltage of the control line. The readout unit generates a digital signal corresponding to the voltage of the gate, based on a current flowing through a second main electrode of the transistor during a period in which the voltage controller changes the voltage of the control line.

Abstract: A sensor has an image sensing unit including pixel blocks, and a readout unit for reading out a signal from the image sensing unit. The pixel block includes a photoelectric converter, first and second transistors, and a current source. First main electrodes of the first and second transistors are connected to a common node, and the current source is provided between the common node and a predetermined voltage. A signal readout operation includes an operation in which a voltage corresponding to charges in the photoelectric converter is supplied to a control electrode of the first transistor, and a temporally changing reference voltage is supplied to a control electrode of the second transistor. The readout unit reads out a signal from the image sensing unit via a second main electrode of the first transistor.

Abstract: An image pickup apparatus performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with one another. In a first period in which a photoelectric conversion unit of at least one of the pixels stores charge, signals based on charges stored in holding units of the pixels are successively output to output lines. In a second period after the output of the signals from the pixels is terminated, the holding units of the pixels hold charge.

Abstract: An image capturing apparatus performs a global electronic shutter operation in which a plurality of pixels are exposed during the same exposure period. In a first period, charge is accumulated by a photoelectric conversion unit. In a second period, accumulation units of a plurality of pixels accumulate charge. A ratio of saturation charge quantity of the photoelectric conversion unit to saturation charge quantity of the accumulation unit has a certain relationship with a ratio of a length of the first period to the sum of the length of the first period and the length of the second period.

Abstract: A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are arranged, wherein the pixel array has a region formed from one of an electrical conductor and a semiconductor to which a fixed electric potential is supplied, each pixel includes a photoelectric converter, a charge-voltage converter which converts charges generated by the photoelectric converter into a voltage, and an amplification unit which amplifies a signal generated by the charge-voltage converter by a positive gain and outputs the amplified signal to an output line, and the output line comprising a shielding portion arranged to shield at least part of the charge-voltage converter with respect to the region.

Abstract: This invention provides an image pickup device comprising a plurality of pixels each including a photoelectric conversion unit, a semiconductor area to which a signal from the photoelectric conversion unit is transferred, a transfer switch for transferring the signal from the photoelectric conversion unit to the semiconductor area, and a read unit for reading out the signal from the semiconductor area, and a drive circuit for outputting a first level at which the transfer switch is set in an OFF state, a second level at which the transfer switch is set in an ON state, and a third level between the first level and the second level, wherein the drive circuit controls to hold the third level for a predetermined time while the transfer switch is changing from the ON state to the OFF state.