Abstract: An acetic acid metabolizing ability of a recombinant yeast strain having xylose-metabolizing ability is to be improved. In such a recombinant yeast strain having xylose-metabolizing ability, the acetaldehyde dehydrogenase gene has been introduced and a gene encoding NADH dehydrogenase involved in reoxidation of cytoplasmic NADH on the mitochondrial outer membrane has been suppressed.

Abstract: The present disclosure is intended to reduce the amount of glycerin produced as a byproduct in ethanol fermentation to a significant extent using a transgenic yeast comprising a gene having the pentose assimilating ability and encoding glycerin dehydrogenase having a mitochondrial transport signal introduced thereinto.

Abstract: In an end portion of a trench, an opening where the end portion of the trench is exposed is formed in a lead-out electrode, a side surface of the trench gate electrode on a top surface side of a semiconductor substrate is spaced from a trench side surface, and a range adjacent to a boundary line positioned between a top surface of the semiconductor substrate and the trench side surface is covered with a laminated insulating film configured such that an interlayer insulating film is laminated on a gate insulating film. This makes it possible to prevent dielectric breakdown of an insulating film.

Abstract: A eukaryotic cell having xylose utilization ability. Provided is a protein that has xylose isomerase activity and has an amino acid sequence including, when aligned with an amino acid sequence expressed by SEQ ID NO:1, the 1st to 6th motifs expressed respectively by SEQ ID NOs:2 to 7 from the N-terminus side in the order described, and having, in place of asparagine (N) in an amino acid sequence of the 6th motif, another amino acid.

Abstract: A manufacturing assistance apparatus includes a learning unit and an estimator. The learning unit is configured to load a plurality of pieces of actual measurement data in each of which a gap and a plurality of parameters are associated with each other, and construct an estimation model on the basis of machine learning in which the plurality of pieces of actual measurement data serve as teacher data. The gap is provided between a first workpiece and a second workpiece that eventually structure an airframe of an aircraft and that are eventually fastened to each other. The estimation model estimates the gap from the plurality of parameters. The estimator is configured to derive an estimation value of a length of the gap on which measurement has not yet been performed, on the basis of the estimation model constructed by the learning unit and the plurality of parameters.

Abstract: The invention is intended to metabolize acetic acid in a medium at the time of culture, such as ethanol fermentation by yeast, and to reduce acetic acid concentration. Specifically, the invention relates to a recombinant yeast resulting from introduction of the acetaldehyde dehydrogenase gene (EC 1.2.1.10) and regulation of an enzyme involved with trehalose accumulation.

Abstract: Technique disclosed herein can suppress performance variation among semiconductor devices to be manufactured upon manufacturing each semiconductor device by forming diffusion layer by ion implantation to semiconductor substrate after etching. A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes an emitter region, a top body region, a barrier region, a bottom body region, a drift region, a collector region, a trench, a gate insulating film, and a gate electrode. A front surface of the gate electrode is provided at a deeper position than a front surface of the semiconductor substrate. Within the gate electrode, a front surface of a first portion at a widthwise center of a trench is provided at a shallower position than a front surface of a second portion in contact with the gate insulating film.

Abstract: This invention is aimed at improving an ethanol fermentation ability of a recombinant yeast strain having an ability of assimilating pentose, such as xylose or arabinose. The recombinant yeast strain haying an ability of assimilating pentose is obtained by lowering activity of a gene involved in upstream of glyceraldehyde-3-phosphate in the Embden-Meyerhof pathway.

Abstract: An acetic acid metabolizing ability of a recombinant yeast strain having xylose-metabolizing ability is to be improved. In such a recombinant yeast strain having xylose-metabolizing ability, the acetaldehyde dehydrogenase gene has been introduced and a gene encoding NADH dehydrogenase involved in reoxidation of cytoplasmic NADH on the mitochondrial outer membrane has been suppressed.

Abstract: A switching device may include a semiconductor substrate; gate trenches; bottom insulating layers covering bottom surfaces of the gate trenches; gate insulating layers covering side surfaces of the gate trenches; and gate electrodes arranged in the gate trenches. The gate insulating layers in a center portion may have a first thickness and a first dielectric constant, and one or more of the gate insulating layers in a peripheral portion may have, within at least a part of the peripheral portion, a second thickness thicker than the first thickness and a second dielectric constant greater than the first dielectric constant. The semiconductor substrate may include a first region being in contact with the gate insulating layers, a body region being in contact with the gate insulating layers under the first region, and a second region being in contact with the gate insulating layers under the body region.

Abstract: A semiconductor device includes a semiconductor substrate of silicon carbide, and a temperature sensor portion. The semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated. The temperature sensor portion is disposed in the semiconductor substrate and is separated from the drift region by the body region. The temperature sensor portion includes an n-type cathode region being in contact with the body region, and a p-type anode region separated from the body region by the cathode region.

Abstract: A eukaryotic cell having xylose utilization ability. Provided is a protein that has xylose isomerase activity and has an amino acid sequence including, when aligned with an amino acid sequence expressed by SEQ ID NO:1, the 1st to 6th motifs expressed respectively by SEQ ID NOs:2 to 7 from the N-terminus side in the order described, and having, in place of asparagine (N) in an amino acid sequence of the 6th motif, another amino acid.

Abstract: A eukaryotic cell having xylose utilization ability. Provided is a protein that has xylose isomerase activity and has an amino acid sequence including, when aligned with an amino acid sequence expressed by SEQ ID NO:1, the 1st to 6th motifs expressed respectively by SEQ ID NOs:2 to 7 from the N-terminus side in the order described, and having, in place of asparagine (N) in an amino acid sequence of the 6th motif, another amino acid.

Abstract: The invention is intended to improve xylose assimilation ability and ethanol fermentation ability in a xylose-assimilating yeast into which a xylose isomerase gene has been introduced. The amount of NADH produced by the recombinant yeast into which the xylose isomerase gene had been introduced as a result of the enzymatic reaction of acetohydroxy acid reductoisomerase is lowered.

Abstract: A switching device may include a semiconductor substrate; gate trenches; bottom insulating layers covering bottom surfaces of the gate trenches; gate insulating layers covering side surfaces of the gate trenches; and gate electrodes arranged in the gate trenches. The gate insulating layers in a center portion may have a first thickness and a first dielectric constant, and one or more of the gate insulating layers in a peripheral portion may have, within at least a part of the peripheral portion, a second thickness thicker than the first thickness and a second dielectric constant greater than the first dielectric constant. The semiconductor substrate may include a first region being in contact with the gate insulating layers, a body region being in contact with the gate insulating layers under the first region, and a second region being in contact with the gate insulating layers under the body region.

Abstract: The invention is intended to metabolize acetic acid and to lower acetic acid concentration in a medium at the time of xylose assimilation and ethanol fermentation by a yeast strain having xylose-metabolizing ability. To this end, a recombinant yeast strain having xylose-metabolizing ability and comprising an acetaldehyde dehydrogenase gene introduced thereinto is cultured in a medium containing cellulose, cellulase, and xylose to perform ethanol fermentation.

Abstract: A semiconductor device includes a semiconductor substrate of silicon carbide, and a temperature sensor portion. The semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated. The temperature sensor portion is disposed in the semiconductor substrate and is separated from the drift region by the body region. The temperature sensor portion includes an n-type cathode region being in contact with the body region, and a p-type anode region separated from the body region by the cathode region.

Abstract: A swash plate type variable displacement compressor includes a collection and supply mechanism. The collection and supply mechanism has collection passages, supply passages, an annular space, an inlet port, and an outlet port. The inlet port is communicable with a working collection passage of the collection passages. The outlet port is communicable with a working supply passage of the supply passages. When the inclination angle of the swash plate is maximum, residual refrigerant gas in a compression chamber of collection phase is collected through the working collection passage and the collected refrigerant gas is supplied to a compression chamber of supply phase. On the other hand, when the inclination angle is less than the maximum, residual refrigerant gas is supplied no more into the supply-phase compression chamber.

Abstract: A method of manufacturing an insulated gate type switching device includes forming a gate trench that has a first portion with a first width in a first direction and a second portion with a second width in the first direction, the second width being wider than the first width. In an oblique implantation, second conductivity type impurities are irradiated at an irradiation angle inclined around an axis orthogonal to the first direction. The first width, the second width, and the irradiation angle are set such that the second conductivity type impurities are suppressed, at a first side surface of the first portion, from being implanted into a part below a lower end of a second semiconductor region, and at a second side surface of the second portion, the impurities are implanted into the part below the lower end of the second semiconductor region.

Abstract: A semiconductor device includes a plurality of trench gates provided abreast in a semiconductor substrate; an interlayer insulation film having opening from which a part of a front surface of the semiconductor substrate is exposed; and contact plugs provided in the openings. The interlayer insulation film comprises a plurality of first portions, each of which covers a corresponding one of the trench gates, and a plurality of second portions, each of which is provided between adjacent first portions and along a direction intersecting with the first portions. The openings are provided at an area surrounded by the first portions and the second portions, a length of the openings in a direction along the first portions is shorter than a length of the openings in a direction along the second portions intersecting with the first portions.