Abstract: Provided are a rinsing liquid which is used for rinsing a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition and includes a hydrocarbon-based solvent having a branched alkyl group. The hydrocarbon-based solvent having a branched alkyl group contains at least one of isodecane or isododecane.

Abstract: Provided are a positive tone pattern forming method in which development is carried out using a developer containing an organic solvent with use of a composition containing (A) a resin which has a repeating unit containing a moiety capable of forming a polar interaction and whose polarity is decreased due to release of the polar interaction by the action of an acid or a base, or a composition containing (A?) a resin having a repeating unit containing a polar group and (B) a compound capable of forming a polar interaction with the polar group of the resin (A?); and an electronic device manufacturing method including such a pattern forming method.

Abstract: A treatment liquid for rinsing and patterning a resist film obtained from an actinic ray-sensitive composition includes an organic solvent in which a content of a compound containing a sulfur atom in the treatment liquid is 10 mmol/L or lower, and the organic solvent is a hydrocarbon solvent. A pattern forming method includes: forming a resist film using an actinic ray-sensitive or radiation-sensitive composition; exposing the resist film; and treating the exposed resist film with the treatment liquid.

Abstract: Provide are a pattern forming method including a step (1) of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition including a resin having an acid-decomposable repeating unit capable of decomposing by the action of an acid to generate an acid having a pKa of 3.0 or less, a step (2) of exposing the film using actinic rays or radiation, and a step (3) of carrying out development using a developer including an organic solvent after the exposure to form a negative tone pattern; and a method for manufacturing an electronic device, including the pattern forming method.

Abstract: Disclosed herein are an organic processing liquid for resist film patterning which is capable of suppressing the occurrence of defects in resist patterns, and a pattern forming method. Provided is an organic processing liquid for resist film patterning, which is used to carry out at least one of developing or cleaning of a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, the liquid including an organic solvent, in which the content of an oxidant in the organic processing liquid is 10 mmol/L or less.

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa??1.5 when exposed to actinic rays or radiation.

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (A) containing a repeating unit represented by a specific formula (1), and an ionic compound (B) represented by a specific formula (2), a resist film formed by using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method including: (a) a step of forming the resist film, (b) a step of exposing the film, and (c) a step of developing the exposed film using a developer to form a pattern.

Abstract: A pattern forming method includes, in this order, forming a film on a substrate, using an active-light-sensitive or radiation-sensitive resin composition containing a resin (A) which has a repeating unit having a phenolic hydroxyl group, and a repeating unit having a group that decomposes by the action of an acid to generate a carboxyl group, and a compound (B) that generates an acid upon irradiation with active light or radiation; exposing the film; and developing the exposed film using a developer including an organic solvent, in which the developer including an organic solvent contains an organic solvent having 8 or more carbon atoms and 2 or less heteroatoms in the amount of 50% by mass or more.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a compound (P) that contains at least one phenolic hydroxyl group and at least one group in which a hydrogen atom of a phenolic hydroxyl group has been substituted with a group represented by the following General Formula (1) (in the formula, M11 represents a single bond or a divalent linking group; Q11 represents an alkyl group, a cycloalkyl group, or an aryl group).

Abstract: Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and ?SP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent.

Abstract: A method for developing a non chemically amplified resist employs a developing fluid having a carboxylic acid compound, which is a carboxylic acid ester having branched chain alkyl groups and a total carbon number of 8 or greater, as a main component. It is particularly preferable for the carboxylic acid compound to be at least one of isobutyl butyrate, butyl isobutyrate, isobutyl isobutyrate, isoamyl isobutyrate, and 2-methylbutyrate 2-methylbutyl. It is also preferable for the non chemically amplified resist to be a resist having a copolymer of an ?-chloroacrylate ester compound and an ?-methylstyrene compound as a main component.

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (A) containing a repeating unit represented by a specific formula (1), and an ionic compound (B) represented by a specific formula (2), a resist film formed by using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method including: (a) a step of forming the resist film, (b) a step of exposing the film, and (c) a step of developing the exposed film using a developer to form a pattern.

Abstract: A radiation-sensitive composition including a compound (P) having a partial structure (A) having an ionic structural site and capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid and a partial structure (B) having at least one phenolic hydroxyl group, a part or all of hydrogen atoms of the hydroxyl group or groups each being protected by a group capable of leaving by the action of an acid, wherein the ionic structural site of the partial structure (A) contained in the compound (P) is a structure capable of generating an acid anion in the compound (P) upon irradiation with an actinic ray or radiation; a pattern-forming method using the same; and a resin which is used in the composition.

Abstract: A resist pattern forming method includes: in the following order, (1) a step of forming a film on a substrate by using a negative resist composition capable of undergoing negative conversion by a crosslinking reaction; (2) a step of exposing the film; and (4) a step of performing development by using an alkali developer after the exposing, wherein the negative resist composition contains (A) a polymer compound having a repeating unit represented by the following formula (I) as defined in the specification, a thickness of the film formed in the step (1) is from 15 to 40 nm, and an alkali component concentration in the alkali developer is from 0.5 to 1.1 mass %.

Abstract: A method for developing a non chemically amplified resist employs a developing fluid having a carboxylic acid compound, which is a carboxylic acid ester having branched chain alkyl groups and a total carbon number of 8 or greater, as a main component. It is particularly preferable for the carboxylic acid compound to be at least one of isobutyl butyrate, butyl isobutyrate, isobutyl isobutyrate, isoamyl isobutyrate, and 2-methylbutyrate 2-methylbutyl. It is also preferable for the non chemically amplified resist to be a resist having a copolymer of an ?-chloroacrylate ester compound and an ?-methylstyrene compound as a main component.

Abstract: A resist pattern forming method includes: in the following order, (1) a step of forming a film on a substrate by using a positive resist composition; (2) a step of exposing the film; and (4) a step of performing development by using an alkali developer after the exposing, wherein the positive resist composition contains (A) a polymer compound having a repeating unit represented by the following formula (I) as defined in the specification, a thickness of the film formed in the step (1) is from 15 to 40 nm, and an alkali component concentration in the alkali developer is from 0.5 to 1.1 mass %.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes any of the compounds of general formula (I) below; wherein: Ar represents an aromatic ring that may have a substituent other than the -(A-B) groups; n is an integer of 1 or greater; A represents any one, or a combination of two or more members selected from a single bond, an alkylene group, —O—, —S—, —C(?O)—, —S(?O)—, —S(?O)2— and —OS(?O)2—, provided that —C(?O)O— is excluded; B represents a group containing a hydrocarbon group having 4 or more carbon atoms wherein either a tertiary or a quaternary carbon atom is contained, when n is 2 or greater, the two or more -(A-B) groups may be identical to or different from each other; and M+ represents an organic onium ion.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a compound (P) that contains at least one phenolic hydroxyl group and at least one group in which a hydrogen atom of a phenolic hydroxyl group has been substituted with a group represented by the following General Formula (1) (in the formula, M11 represents a single bond or a divalent linking group; Q11 represents an alkyl group, a cycloalkyl group, or an aryl group).

Abstract: A resist pattern forming method contains: in the following order, (1) forming a resist film by using a negative chemical amplification resist composition containing (A) a polymer compound having a repeating unit represented by formula (1) as defined in the specification, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a crosslinking agent capable of crosslinking the polymer compound (A) by an action of an acid; (2) exposing the resist film, so as to form an exposed resist film; and (4) developing the exposed resist film by using a developer containing an organic solvent.

Abstract: Provided is a actinic ray-sensitive or radiation-sensitive resin composition including (P) a resin containing (A) a repeating unit having an ionic structure moiety that contains a cation represented by formula (Ia) and is capable of producing an acid anion on the side chain upon irradiation with an actinic ray or radiation: wherein each of R1a to R13a independently represents a hydrogen atom or a monovalent substituent and may combine together to form a ring, and Z represents a single bond or a divalent linking group.