Abstract: A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and at least one guard structure including a first guard element, a second guard element, and a third guard element. The first semiconductor substrate and the second semiconductor substrate are bonded to one another at a bonding interface between a surface of the first semiconductor substrate and a surface of the second semiconductor substrate. The first guard element is in the first semiconductor substrate and spaced apart from the third guard element by a portion of the first semiconductor substrate. The second guard element is in the second semiconductor substrate and spaced apart from the third guard element by a portion of the second semiconductor substrate, and the third guard element includes portions in the first surface and the second surface to bond the first semiconductor substrate to the second semiconductor substrate.

Abstract: A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and at least one guard structure including a first guard element, a second guard element, and a third guard element. The first semiconductor substrate and the second semiconductor substrate are bonded to one another at a bonding interface between a surface of the first semiconductor substrate and a surface of the second semiconductor substrate. The first guard element is in the first semiconductor substrate and spaced apart from the third guard element by a portion of the first semiconductor substrate. The second guard element is in the second semiconductor substrate and spaced apart from the third guard element by a portion of the second semiconductor substrate, and the third guard element includes portions in the first surface and the second surface to bond the first semiconductor substrate to the second semiconductor substrate.

Abstract: The present technology relates to a semiconductor device that includes an underfill resin and a light-shielding resin and allows to achieve a decrease in device size, a method of producing the same, and an electronic apparatus. The semiconductor device includes: a substrate having a pixel region in which a plurality of pixels is arranged; and one or more chips flip-chip bonded to the substrate via a connection terminal. A material of a first resin that protects a back surface of the chip and a material of a second resin that protects a side surface of the chip are different from each other. The present technology is applicable to, for example, a semiconductor device in which an image sensor chip and a signal processing chip are flip-chip bonded to each other.

Abstract: The present disclosure relates to a camera module capable of achieving a smaller height, a method of manufacturing a camera module, an imaging apparatus, and an electronic apparatus. An imaging device having its imaging surface bonded to a provisional substrate is attached, and the imaging device in that state is joined to a substrate via an electrode having a TSV structure. After the provisional substrate is detached, an IR cut filter (IRCF) on which a light blocking film is printed or jet-dispensed in a region other than the effective pixel region is bonded to the imaging surface via a transparent resin. Because of this, there is no need to provide any sealing glass in the stage before the imaging surface, and the optical length of the lens can be shortened. Thus, a smaller height can be achieved. The present disclosure can be applied to camera modules.

Abstract: A solid-state imaging device capable of suppressing the occurrence of flare is provided. The solid-state imaging device includes a substrate on which a plurality of photoelectric conversion units are formed, a groove that is formed between a pixel region having the plurality of photoelectric conversion units and a blade region surrounding the pixel region such that the groove is opened near the light-receiving surface of the substrate and surrounds the pixel region, and a light absorber that is disposed in the groove and absorbs light.

Abstract: The present disclosure relates to a camera module capable of achieving a smaller height, a method of manufacturing a camera module, an imaging apparatus, and an electronic apparatus. An imaging device having its imaging surface bonded to a provisional substrate is attached, and the imaging device in that state is joined to a substrate via an electrode having a TSV structure. After the provisional substrate is detached, an IR cut filter (IRCF) on which a light blocking film is printed or jet-dispensed in a region other than the effective pixel region is bonded to the imaging surface via a transparent resin. Because of this, there is no need to provide any sealing glass in the stage before the imaging surface, and the optical length of the lens can be shortened. Thus, a smaller height can be achieved. The present disclosure can be applied to camera modules.

Abstract: A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and at least one guard structure including a first guard element, a second guard element, and a third guard element. The first semiconductor substrate and the second semiconductor substrate are bonded to one another at a bonding interface between a surface of the first semiconductor substrate and a surface of the second semiconductor substrate. The first guard element is in the first semiconductor substrate and spaced apart from the third guard element by a portion of the first semiconductor substrate. The second guard element is in the second semiconductor substrate and spaced apart from the third guard element by a portion of the second semiconductor substrate, and the third guard element includes portions in the first surface and the second surface to bond the first semiconductor substrate to the second semiconductor substrate.

Abstract: The present technology relates to a solid state image pickup device and a production method, a semiconductor wafer, and an electronic apparatus by which the yield can be improved. On a semiconductor wafer, a chip region in which pixels and so forth that configure a solid state image pickup device are formed and a scribe region are formed. In the scribe region, a measuring region in which an inspection circuit for measuring a property of the chip region and measurement pads are formed and a dicing line to be cut upon fragmentation of the semiconductor wafer are provided. The measuring region is positioned between the dicing line and the chip region. The present technology can be applied to a solid state image pickup device.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: The present optical module includes a sensor configured to pick up an image of an image pickup object, and a memory chip configured to store pixel data read out from the sensor and having the sensor joined thereto. The memory chip is connected to a substrate by a connection portion by flip-chip connection. The sensor can be connected by a wire to the memory chip, to which the sensor is joined. Further, the sensor can be joined to the memory chip in such a manner as to project toward an opening of the substrate. The present technology can be applied to a camera module.

Abstract: The present disclosure relates to a camera module capable of achieving a smaller height, a method of manufacturing a camera module, an imaging apparatus, and an electronic apparatus. An imaging device having its imaging surface bonded to a provisional substrate is attached, and the imaging device in that state is joined to a substrate via an electrode having a TSV structure. After the provisional substrate is detached, an IR cut filter (IRCF) on which a light blocking film is printed or jet-dispensed in a region other than the effective pixel region is bonded to the imaging surface via a transparent resin. Because of this, there is no need to provide any sealing glass in the stage before the imaging surface, and the optical length of the lens can be shortened. Thus, a smaller height can be achieved. The present disclosure can be applied to camera modules.

Abstract: The present disclosure relates to a camera module capable of achieving a smaller height, a method of manufacturing a camera module, an imaging apparatus, and an electronic apparatus. An imaging device having its imaging surface bonded to a provisional substrate is attached, and the imaging device in that state is joined to a substrate via an electrode having a TSV structure. After the provisional substrate is detached, an IR cut filter (IRCF) on which a light blocking film is printed or jet-dispensed in a region other than the effective pixel region is bonded to the imaging surface via a transparent resin. Because of this, there is no need to provide any sealing glass in the stage before the imaging surface, and the optical length of the lens can be shortened. Thus, a smaller height can be achieved. The present disclosure can be applied to camera modules.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: A solid-state imaging apparatus includes an imaging section and a substrate. The imaging section has a light-receiving portion for receiving light from an object to image the object and the imaging section is disposed on the substrate. A member is provided on the substrate in the neighborhood of the light receiving portion and the member is partially or entirely coated in black.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: The present optical module includes a sensor configured to pick up an image of an image pickup object, and a memory chip configured to store pixel data read out from the sensor and having the sensor joined thereto. The memory chip is connected to a substrate by a connection portion by flip-chip connection. The sensor can be connected by a wire to the memory chip, to which the sensor is joined. Further, the sensor can be joined to the memory chip in such a manner as to project toward an opening of the substrate. The present technology can be applied to a camera module.

Abstract: The present disclosure relates to a camera module capable of achieving a smaller height, a method of manufacturing a camera module, an imaging apparatus, and an electronic apparatus. —An imaging device having its imaging surface bonded to a provisional substrate is attached, and the imaging device in that state is joined to a substrate via an electrode having a TSV structure. After the provisional substrate is detached, an IR cut filter (IRCF) on which a light blocking film is printed or jet-dispensed in a region other than the effective pixel region is bonded to the imaging surface via a transparent resin. Because of this, there is no need to provide any sealing glass in the stage before the imaging surface, and the optical length of the lens can be shortened. Thus, a smaller height can be achieved. The present disclosure can be applied to camera modules.

Abstract: [Object] To suppress appearance of a ghost. [Solving Means] The present optical module includes a sensor configured to pick up an image of an image pickup object, and a memory chip configured to store pixel data read out from the sensor and having the sensor joined thereto. The memory chip is connected to a substrate by a connection portion by flip-chip connection. The sensor can be connected by a wire to the memory chip, to which the sensor is joined. Further, the sensor can be joined to the memory chip in such a manner as to project toward an opening of the substrate. The present technology can be applied to a camera module.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.