Abstract: A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.

Abstract: A device transfer method includes the steps of: covering a plurality of devices, which have been formed on a substrate, with a resin layer; forming electrodes in the resin layer in such a manner that the electrodes are connected to the devices; cutting the resin layer, to obtain resin buried devices each containing at least one of the devices; and peeling the resin buried devices from the substrate and transferring them to a device transfer body. This device transfer method is advantageous in easily, smoothly separating devices from each other, and facilitating handling of the devices in a transfer step and ensuring good electric connection between the devices and external wiring, even if the devices are fine devices.

Abstract: A method of selectively transferring devices arrayed on a first substrate to a second substrate on which an adhesive resin layer is previously formed is provided. The method includes steps of selectively heating the adhesive resin layer on the second substrate by laser irradiation from the back surface side of the second substrate, and curing the selectively heated portions of the adhesive resin layer, thereby adhesively bonding those to be transferred of the devices to the second substrate. At this time, portions, corresponding to the devices, of the adhesive layer are heated directly or indirectly via the devices or wiring portions by laser irradiation from the back surface side of the substrate. The heated portions of the adhesive resin layer selectively exhibit the adhesive forces. The heated portions of the adhesive layer are then cured, so that only the devices to be transferred are selectively transferred to the second substrate.

Abstract: A method of selectively transferring devices arrayed on a first substrate to a second substrate on which an adhesive resin layer is previously formed is provided. The method includes steps of selectively heating the adhesive resin layer on the second substrate by laser irradiation from the back surface side of the second substrate, and curing the selectively heated portions of the adhesive resin layer, thereby adhesively bonding those to be transferred of the devices to the second substrate. At this time, portions, corresponding to the devices, of the adhesive layer are heated directly or indirectly via the devices or wiring portions by laser irradiation from the back surface side of the substrate. The heated portions of the adhesive resin layer selectively exhibit the adhesive forces. The heated portions of the adhesive layer are then cured, so that only the devices to be transferred are selectively transferred to the second substrate.

Abstract: A method for forming via holes includes placing an insulating layer on a first wiring layer, forming opening portions in the insulating layer, and forming a second wiring layer on the insulating layer. At the time of forming the opening portions, the insulating layer is irradiated with a laser beam with the focus position staggered.

Abstract: A method of selectively transferring devices arrayed on a first substrate to a second substrate on which an adhesive resin layer is previously formed is provided. The method includes steps of selectively heating the adhesive resin layer on the second substrate by laser irradiation from the back surface side of the second substrate, and curing the selectively heated portions of the adhesive resin layer, thereby adhesively bonding those to be transferred of the devices to the second substrate. At this time, portions, corresponding to the devices, of the adhesive layer are heated directly or indirectly via the devices or wiring portions by laser irradiation from the back surface side of the substrate. The heated portions of the adhesive resin layer selectively exhibit the adhesive forces. The heated portions of the adhesive layer are then cured, so that only the devices to be transferred are selectively transferred to the second substrate.

Abstract: A method of selectively transferring devices arrayed on a first substrate to a second substrate on which an adhesive resin layer is previously formed is provided. The method includes steps of selectively heating the adhesive resin layer on the second substrate by laser irradiation from the back surface side of the second substrate, and curing the selectively heated portions of the adhesive resin layer, thereby adhesively bonding those to be transferred of the devices to the second substrate. At this time, portions, corresponding to the devices, of the adhesive layer are heated directly or indirectly via the devices or wiring portions by laser irradiation from the back surface side of the substrate. The heated portions of the adhesive resin layer selectively exhibit the adhesive forces. The heated portions of the adhesive layer are then cured, so that only the devices to be transferred are selectively transferred to the second substrate.

Abstract: The interface between a first substrate and light-emitting diodes formed on the first substrate is selectively irradiated with an energy beam and transmits the energy beam through the first substrate, thereby selectively releasing the light-emitting diodes. The light-emitting diodes are then transferred onto a device holding layer included on a device holding substrate. Subsequently, the light-emitting diodes are transferred onto a second substrate. The irradiation of the interface with the energy beam enables the devices to be easily released from the first substrate.

Abstract: A method of selectively transferring devices arrayed on a first substrate to a second substrate on which an adhesive resin layer is previously formed is provided. The method includes steps of selectively heating the adhesive resin layer on the second substrate by laser irradiation from the back surface side of the second substrate, and curing the selectively heated portions of the adhesive resin layer, thereby adhesively bonding those to be transferred of the devices to the second substrate. At this time, portions, corresponding to the devices, of the adhesive layer are heated directly or indirectly via the devices or wiring portions by laser irradiation from the back surface side of the substrate. The heated portions of the adhesive resin layer selectively exhibit the adhesive forces. The heated portions of the adhesive layer are then cured, so that only the devices to be transferred are selectively transferred to the second substrate.

Abstract: Disclosed are a crystal layer separation method capable of separating a crystal layer formed on a substrate therefrom without occurrence of any crack, and a laser irradiation method used therefor, and a method of fabricating devices using the same. The crystal layer separation method includes the step of separating a crystal layer made from a GaN based compound formed on a sapphire substrate therefrom by irradiating the crystal layer with a laser beam from the back surface of the substrate, wherein the crystal layer is irradiated with the laser beam in a line-shape. In this method, an irradiation width of the laser beam is preferably equal to or less than a thickness of the crystal layer, and the laser beam preferably has a light intensity distribution smoothened in the width direction.

Abstract: A device transfer method includes the steps of: covering a plurality of devices, which have been formed on a substrate, with a resin layer; forming electrodes in the resin layer in such a manner that the electrodes are connected to the devices; cutting the resin layer, to obtain resin buried devices each containing at least one of the devices; and peeling the resin buried devices from the substrate and transferring them to a device transfer body. This device transfer method is advantageous in easily, smoothly separating devices from each other, and facilitating handling of the devices in a transfer step and ensuring good electric connection between the devices and external wiring, even if the devices are fine devices.

Abstract: A device transfer method includes the steps of: covering a plurality of devices, which have been formed on a substrate, with a resin layer; forming electrodes in the resin layer in such a manner that the electrodes are connected to the devices; cutting the resin layer, to obtain resin buried devices each containing at least one of the devices; and peeling the resin buried devices from the substrate and transferring them to a device transfer body. This device transfer method is advantageous in easily, smoothly separating devices from each other, and facilitating handling of the devices in a transfer step and ensuring good electric connection between the devices and external wiring, even if the devices are fine devices.

Abstract: A display unit having a sufficient luminance and a method of fabricating the display unit are provided. The display unit includes micro-sized semiconductor light emitting devices fixedly arrayed on a plane of a base body of the display unit at intervals. Micro-sized GaN based semiconductor light emitting devices formed by selective growth are each buried in a first insulating layer made from an epoxy resin except an upper end portion and a lower end surface thereof, and electrodes of each of the light emitting devices are extracted. These light emitting devices are fixedly arrayed on the upper plane of the base body at intervals. A second insulating layer made from an epoxy resin is formed on the plane of the base body so as to cover the semiconductor light emitting devices each of which has been buried in the first insulating layer.

Abstract: A device transfer method includes the steps of: covering a plurality of devices, which have been formed on a substrate, with a resin layer; forming electrodes in the resin layer in such a manner that the electrodes are connected to the devices; cutting the resin layer, to obtain resin buried devices each containing at least one of the devices; and peeling the resin buried devices from the substrate and transferring them to a device transfer body. This device transfer method is advantageous in easily, smoothly separating devices from each other, and facilitating handling of the devices in a transfer step and ensuring good electric connection between the devices and external wiring, even if the devices are fine devices.

Abstract: An image display unit and a method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.

Abstract: A method for forming via holes includes placing an insulating layer on a first wiring layer, forming opening portions in the insulating layer, and forming a second wiring layer on the insulating layer. At the time of forming the opening portions, the insulating layer is irradiated with a laser beam with the focus position staggered.

Abstract: An image display unit and a method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.

Abstract: A method of selectively transferring devices arrayed on a first substrate to a second substrate on which an adhesive resin layer is previously formed is disclosed. The method includes steps of selectively heating the adhesive resin layer on the second substrate by laser irradiation from the back surface side of the second substrate, and curing the selectively heated portions of the adhesive resin layer, thereby adhesively bonding those to be transferred of the devices to the second substrate. At this time, portions, corresponding to the devices, of the adhesive layer is heated directly or indirectly via the devices or wiring portions by laser irradiation from the back surface side of the substrate. The heated portions of the adhesive resin layer selectively exhibit the adhesive forces. The heated portions of the adhesive layer are then cured, so that only the devices to be transferred are selectively transferred to the second substrate.

Abstract: An inexpensive display unit having a sufficient luminance and a method of fabricating the display unit are disposed, wherein micro-sized semiconductor light emitting devices are fixedly arrayed on a plane of a base body of the display unit at intervals. Micro-sized GaN based semiconductor light emitting devices (11) formed by selective growth are each buried in a first insulating layer (21) made from an epoxy resin except an upper end portion and a lower end surface thereof, and electrodes (18) and (19) of each of the light emitting devices (11) are extracted. These light emitting devices (11) are fixedly arrayed on the upper plane of the base body (31) at intervals.