Patents by Inventor Toshiaki Moriuchi

Toshiaki Moriuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming MESFET having T-shaped gate electrode
    Patent number: 5686325
    Abstract: A compound semiconductor transistor has a structure in which a first insulating film is formed only under a overhang of a gate electrode an upper part of which is formed widely, and a second insulating film for threshold voltage adjustment is formed on the side of a gate electrode and the first insulating film.
    Type: Grant
    Filed: September 21, 1995
    Date of Patent: November 11, 1997
    Assignee: Fujitsu Limited
    Inventors: Toshiaki Moriuchi, Teruo Yokoyama