Abstract: A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.

Abstract: A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.

Abstract: A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.

Abstract: A substrate treatment system includes a plurality of treatment apparatuses, a position adjustment apparatus adjusting a center position of the substrate, a substrate transfer apparatus transferring the substrate to the treatment apparatuses and the position adjustment apparatus, and a control unit controlling operations of the apparatuses. The substrate transfer apparatus includes an arm part curved along a peripheral edge portion of the substrate with a radius of curvature larger than a radius of the substrate, and a holding part projecting inward from the arm part and holding a rear surface of the substrate. The position adjustment apparatus includes a mounting table which holds a central portion of the rear surface of the substrate and is rotatable and horizontally movable. The control unit controls the mounting table such that the center position of the substrate held on the mounting table is aligned with a center position of the arm part.

Abstract: A substrate treatment system includes a plurality of treatment apparatuses, a position adjustment apparatus adjusting a center position of the substrate, a substrate transfer apparatus transferring the substrate to the treatment apparatuses and the position adjustment apparatus, and a control unit controlling operations of the apparatuses. The substrate transfer apparatus includes an arm part curved along a peripheral edge portion of the substrate with a radius of curvature larger than a radius of the substrate, and a holding part projecting inward from the arm part and holding a rear surface of the substrate. The position adjustment apparatus includes a mounting table which holds a central portion of the rear surface of the substrate and is rotatable and horizontally movable. The control unit controls the mounting table such that the center position of the substrate held on the mounting table is aligned with a center position of the arm part.

Abstract: A heat processing apparatus for heating a mask substrate is disclosed. A mask substrate on which a coating solution has been coated is placed on a heating plate that heats the substrate. A frame member is disposed on the heating plate so that the frame member faces a side surface of the mask substrate placed on the heating plate when the frame member is attached to the heating plate and that a clearance is formed between the frame member and the heating plate when the frame member is attached to the heating plate. The frame member suppresses heat radiated from the side surface of the substrate. As a result, the temperature uniformity of the surface of the substrate can be improved. In addition, since the clearance is formed between the frame member and the heating plate, particles do not accumulate in the region. Thus, adhesion of particles to the substrate can be suppressed.

Abstract: A heat treating apparatus is provided to apply a heat treatment on a substrate. Prior to the heat treatment, an exclusive transfer mechanism transfers the substrate from a cooling plate onto a heating plate for heating the substrate. Before mounting the substrate on the heating plate, the control mode for heater modules for heating the heating plate on power supply module is switched from a PID control by a regulating part in a controller of the apparatus to a MV control by a fixed-pattern output part in the controller. Next, at a predetermined timing since the substrate has been mounted on the heating plate, the MV control is switched to the PID control. Consequently, it becomes possible to quickly restore a reduce temperature of the heating plate prior to the mounting of substrate on the heating plate and also possible to quickly stabilize a so-raised temperature of the heating plate, accomplishing a heating process with high accuracy and shirt time.

Abstract: Immediately after a cold substrate G is placed on a substrate table 3, a large electric power P1 is supplied to a heating element 32 embedded in the substrate table for a time period T1 so that temperature of the substrate table overshoots a target temperature, and thereafter zero or very small electric power P2 is supplied to the heating element for a time period T2 so that the temperature of the substrate table 3 is lowered to the target temperature while temperature of the substrate continues to rise up to the target temperature. When both the temperature of the substrate table and of the substrate reaches approximately to the target temperature after the time period T2 has elapsed, control of the electric power is entrusted to a PID controller.

Abstract: A heat treating apparatus is provided to apply a heat treatment on a substrate. Prior to the heat treatment, an exclusive transfer mechanism transfers the substrate from a cooling plate onto a heating plate for heating the substrate. Before mounting the substrate on the heating plate, the control mode for heater modules for heating the heating plate on power supply module is switched from a PID control by a regulating part in a controller of the apparatus to a MV control by a fixed-pattern output part in the controller. Next, at a predetermined timing since the substrate has been mounted on the heating plate, the MV control is switched to the PID control. Consequently, it becomes possible to quickly restore a reduce temperature of the heating plate prior to the mounting of substrate on the heating plate and also possible to quickly stabilize a so-raised temperature of the heating plate, accomplishing a heating process with high accuracy and shirt time.

Abstract: A substrate is horizontally held by a substrate holding portion freely movable in the Y-direction, and a nozzle portion is provided above and opposing the substrate, and movable in X-direction corresponding to the coating liquid feeding region of the substrate. A discharge opening is formed at a lower end of the nozzle portion, and a channel connecting the discharge opening with a coating liquid feed tube coupled to an upper end of the nozzle portion is formed within the discharge opening. At the mid-stream of the channel, a liquid pool portion larger in diameter than the discharge opening is formed, the inside of which is provided with a filtering member formed by porous bodies blocking the channel. The filtering member forms a pressure loss portion, which absorbs pulsation occurring at the coating liquid feed tube before it reaches the discharge opening.

Abstract: A substrate is horizontally held by a substrate holding portion freely movable in the Y-direction, and a nozzle portion is provided above and opposing the substrate, and movable in X-direction corresponding to the coating liquid feeding region of the substrate. A discharge opening is formed at a lower end of the nozzle portion, and a channel connecting the discharge opening with a coating liquid feed tube coupled to an upper end of the nozzle portion is formed within the discharge opening. At the mid-stream of the channel, a liquid pool portion larger in diameter than the discharge opening is formed, the inside of which is provided with a filtering member formed by porous bodies blocking the channel. The filtering member forms a pressure loss portion, which absorbs pulsation occurring at the coating liquid feed tube before it reaches the discharge opening.

Abstract: Immediately after a cold substrate G is placed on a substrate table 3, a large electric power P1 is supplied to a heating element 32 embedded in the substrate table for a time period T1 so that temperature of the substrate table overshoots a target temperature, and thereafter zero or very small electric power P2 is supplied to the heating element for a time period T2 so that the temperature of the substrate table 3 is lowered to the target temperature while temperature of the substrate continues to rise up to the target temperature. When both the temperature of the substrate table and of the substrate reaches approximately to the target temperature after the time period T2 has elapsed, control of the electric power is entrusted to a PID controller.

Abstract: A substrate is horizontally held by a substrate holding portion freely movable in the Y-direction, and a nozzle portion is provided above and opposing the substrate, and movable in X-direction corresponding to the coating liquid feeding region of the substrate. A discharge opening is formed at a lower end of the nozzle portion, and a channel connecting the discharge opening with a coating liquid feed tube coupled to an upper end of the nozzle portion is formed within the discharge opening. At the midstream of the channel, a liquid pool portion larger in diameter than the discharge opening is formed, the inside of which is provided with a filtering member formed by porous bodies blocking the channel. The filtering member forms a pressure loss portion, which absorbs pulsation occurring at the coating liquid feed tube before it reaches the discharge opening.

Abstract: A heat processing apparatus for heating a mask substrate is disclosed. A mask substrate on which a coating solution has been coated is placed on a heating plate that heats the substrate. A frame member is disposed on the heating plate so that the frame member faces a side surface of the mask substrate placed on the heating plate when the frame member is attached to the heating plate and that a clearance is formed between the frame member and the heating plate when the frame member is attached to the heating plate. The frame member suppresses heat radiated from the side surface of the substrate. As a result, the temperature uniformity of the surface of the substrate can be improved. In addition, since the clearance is formed between the frame member and the heating plate, particles do not accumulate in the region. Thus, adhesion of particles to the substrate can be suppressed.

Abstract: A system for supplying a chemical to a substrate to form a liquid film of the chemical on the substrate. The system includes a plate having a slit between a nozzle portion movable in lateral directions, and a substrate held by a substrate holding portion movable in longitudinal directions. Shock eliminating portions, provided at left and right ends of the slit, inhibit mist from being produced from a coating liquid supplied outside of the slit. A pair of shutters are capable of washing the coating liquid received by the surfaces of the shock eliminating portions. In the vicinity of the slit, a suction port is provided over a range corresponding to a movable region of the nozzle for sucking mist produced when the nozzle is scanned to carry out coating. The plate has a slit for dispersing a downward flow outside of the slit.

Abstract: A heating processing chamber has a plate for holding a wafer and a heater heating the plate portion. The plate portion is composed of a plurality of divided plates separated from each other, and thereby the plate is hard to break even through a drastic change in temperature, thus making it possible to increase the durability of the plate.

Abstract: A substrate is horizontally held by a substrate holding portion freely movable in the Y-direction, and a nozzle portion is provided above and opposing the substrate, and movable in X-direction corresponding to the coating liquid feeding region of the substrate. A discharge opening is formed at a lower end of the nozzle portion, and a channel connecting the discharge opening with a coating liquid feed tube coupled to an upper end of the nozzle portion is formed within the discharge opening. At the midstream of the channel, a liquid pool portion larger in diameter than the discharge opening is formed, the inside of which is provided with a filtering member formed by porous bodies blocking the channel. The filtering member forms a pressure loss portion, which absorbs pulsation occurring at the coating liquid feed tube before it reaches the discharge opening.

Abstract: There is provided a system for supplying a chemical to a substrate to form a liquid film of the chemical on the substrate, the system being capable of inhibiting particles from adhering to the surface of the substrate and improving the yields of a coating film formed on the surface of the substrate.

Abstract: In a heat processing apparatus structured to heat a wafer on a hot plate, a black plate at least the rear face of which practically has a color with a JIS lightness of 0V to 4V is positioned above the hot plate. Moreover, cooling air is blown out from nozzles onto the rear face of the hot plate. Thus, the temperature of the hot plate can be cooled rapidly.

Abstract: In a heat processing apparatus for heating a wafer on a hot plate, a black plate having at least a rear face practically having a color with a JIS lightness of 0V to 4V is positioned above the hot plate. Moreover, cooling air is blown out from nozzles onto the rear face of the hot plate so that the temperature of the hot plate can be cooled rapidly.