Abstract: An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

Abstract: The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.

Abstract: A jet of water in a cylindrical form is supplied from a jet nozzle onto a measurement surface of a substrate to form a column of the water extending between the nozzle and the measurement surface. Light is emitted from an irradiation fiber and transmitted through the column of water to the measurement surface. The light reflected by the measurement surface is received by a light-receiving fiber through the column of water. A measurement calculation unit measures the thickness of a film formed on the substrate, based on the intensity of the reflected light.

Abstract: An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system.

Abstract: The present invention relates to a substrate inspection apparatus for inspecting a pattern formed on a substrate by irradiating a charged particle beam onto the substrate.

Abstract: The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.

Abstract: A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.

Abstract: A jet of water in a cylindrical form is supplied from a jet nozzle onto a measurement surface of a substrate to form a column of the water extending between the nozzle and the measurement surface. Light is emitted from an irradiation fiber and transmitted through the column of water to the measurement surface. The light reflected by the measurement surface is received by a light-receiving fiber through the column of water. A measurement calculation unit measures the thickness of a film formed on the substrate, based on the intensity of the reflected light.

Abstract: An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system; specifically, the electron beam apparatus comprises beam generating means 2004 for irradiating an electron beam having a particular width, a primary electron-optical system 2001 for leading the beam to reach the surface of a substrate 2006 under testing, a secondary electron-optical system 2002 for trapping secondary electrons generated from the substrate 2006 and introducing them into an image processing system 2015, a stage 2003 for transportably holding the substrate 2006 with a continuous degree of freedom equal to at least one, a testing chamber for the substrate 2006, a substrate transport mech

Abstract: An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system.

Abstract: Provided is an electron beam apparatus in which an electron beam emitted from an electron gun is separated by a plurality of apertures, images of said apertures are reduced in more than two stages to form multi-beams on a sample surface and to scan said sample thereby, and secondary electrons from said sample are passed through an objective lens, where distances between said secondary electrons are extended, further through an E×B separator, where said secondary electrons are separated from the primary beam, and finally onto secondary electron detectors, where said secondary electrons are detected, wherein a lens defined in the second step for reducing said image of the aperture is composed of two stage lens and an enlarged image of the secondary electron is formed on a position between a first and a second lenses of said two stage lens, thereby reducing an aberration of the optical system for detecting the secondary electrons and allowing as many multi-beams as possible to be formed in the vicinity of a sing

Abstract: Provided is an electron beam apparatus in which an electron beam emitted from an electron gun is separated by a plurality of apertures, images of said apertures are reduced in more than two stages to form multi-beams on a sample surface and to scan said sample thereby, and secondary electrons from said sample are passed through an objective lens, where distances between said secondary electrons are extended, further through an E×B separator, where said secondary electrons are separated from the primary beam, and finally onto secondary electron detectors, where said secondary electrons are detected, wherein a lens defined in the second step for reducing said image of the aperture is composed of two stage lens and an enlarged image of the secondary electron is formed on a position between a first and a second lenses of said two stage lens, thereby reducing an aberration of the optical system for detecting the secondary electrons and allowing as many multi-beams as possible to be formed in the vicinity of a sing

Abstract: An object of the present invention is to provide an electron beam apparatus, in which a plurality of electron beams, e.g., four electron beams, is produced for one optical axis with a relatively high current achieved for each electron beam. Provided is an electron beam apparatus comprising: an electron beam emitter (32) having an electron gun (30), said electron gun (30) disposed along an optical axis (23) and operable to emit a plurality of off-axis electron beams along a direction defined by a certain angle with respect to the optical axis (23); a plurality of apertures (34) disposed at a location offset from the optical axis (23); and an electromagnetic lens (7) for forming a magnetic field between the electron gun (30) and the apertures (34) to control the plurality of off-axis electron beams emitted from the electron gun (30) so that the plurality of off-axis electron beams passes through the apertures (34).

Abstract: A controller determines, in response to a position coordinate from an X/Y interferometer, which algorism should be used for current inspection, and controls a connection status of a switch to store a reference image corresponding thereto in an image memory. The reference image is one of an image of a sample surface obtained by an image data acquisition unit, an image provided from a cell reference image generation unit, and an image provided from a CAD data reference image generation unit. The controller further controls a connection status of a second switch to provide the reference image associated with the current inspection algorism to an image comparator, where the provided reference image is compared with a currently obtained image. On the basis of a result of the comparison, a defect determination unit determines the presence/absence of a defect.

Abstract: A substrate inspection apparatus 1-1 (FIG.

Abstract: A method for alignment of a chip in a substrate surface inspection is provided, in which a surface of a substrate including a chip formed therein is inspected by using a beam. The method is characterized in comprising: a step of placing the substrate so that the chip is positioned within a field of view subject to the inspection; a step of measuring a magnification for the detection when the chip is positioned within the field of view subject to the inspection; a step of calculating a size of position error of the chip based on the measured magnification for the detection; and a step of compensating for the position of the chip based on the calculated position error.

Abstract: An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system.

Abstract: Provided is an electron beam apparatus in which an electron beam emitted from an electron gun is separated by a plurality of apertures, images of said apertures are reduced in more than two stages to form multi-beams on a sample surface and to scan said sample thereby, and secondary electrons from said sample are passed through an objective lens, where distances between said secondary electrons are extended, further through an E×B separator, where said secondary electrons are separated from the primary beam, and finally onto secondary electron detectors, where said secondary electrons are detected, wherein a lens defined in the second step for reducing said image of the aperture is composed of two stage lens and an enlarged image of the secondary electron is formed on a position between a first and a second lenses of said two stage lens, thereby reducing an aberration of the optical system for detecting the secondary electrons and allowing as many multi-beams as possible to be formed in the vicinity of a sing

Abstract: A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25••1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.

Abstract: A substrate inspection apparatus 1-1 (FIG.