Abstract: A jet of water in a cylindrical form is supplied from a jet nozzle onto a measurement surface of a substrate to form a column of the water extending between the nozzle and the measurement surface. Light is emitted from an irradiation fiber and transmitted through the column of water to the measurement surface. The light reflected by the measurement surface is received by a light-receiving fiber through the column of water. A measurement calculation unit measures the thickness of a film formed on the substrate, based on the intensity of the reflected light.

Abstract: The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.

Abstract: A jet of water in a cylindrical form is supplied from a jet nozzle onto a measurement surface of a substrate to form a column of the water extending between the nozzle and the measurement surface. Light is emitted from an irradiation fiber and transmitted through the column of water to the measurement surface. The light reflected by the measurement surface is received by a light-receiving fiber through the column of water. A measurement calculation unit measures the thickness of a film formed on the substrate, based on the intensity of the reflected light.

Abstract: A film thickness measuring method and apparatus sets forth a spectral reflectance ratio S(&lgr;) at a spot where the film to be measured is present and a spectral reflectance ratio R(&lgr;) at a spot where the film to be measured is not present are measured to determine a spectral reflectance ratio Rmeas(&lgr;)=S(&lgr;)/R(&lgr;). A theoretical value Rcalc(&lgr;) of the spectral reflectance ratio at an assumed film thickness d is determined, and an evaluation value Ed is determined from the total sum of differences between the value of Rmeas(&lgr;) and the value of Rcalc(&lgr;). Assuming that the spectral reflectance ratio Rmeas(&lgr;e) of the film is 1 (Rmeas(&lgr;e)=1), an evaluation value Enewd is determined. The film thickness d is changed to determine an evaluation function Enew(d). An evaluation function ratio PE(d) is determined from E(d)/Enew(d), and a film thickness d that gives a minimum value of the ratio PE(d) is determined to be a measured film thickness D.

Abstract: The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.

Abstract: The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.

Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.

Abstract: A substrate inspection apparatus 1-1 (FIG.

Abstract: The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.

Abstract: The present invention relates to a substrate inspection apparatus for inspecting a pattern formed on a substrate by irradiating a charged particle beam onto the substrate.

Abstract: The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.

Abstract: An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system.

Abstract: An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

Abstract: An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.

Abstract: A film thickness measuring method and apparatus capable of measuring a film thickness with high accuracy even if the spectral reflection intensity is not sufficiently high to measure an accurate film thickness and gives a poor S/N ratio. A spectral reflectance ratio S(&lgr;) at a spot where the film under measurement is present and a spectral reflectance ratio R(&lgr;) at a spot where the film under measurement is not present are measured to determine a spectral reflectance ratio Rmeas(&lgr;)=S(&lgr;)/R(&lgr;). A theoretical value Rcalc(&lgr;) of spectral reflectance ratio at an assumed film thickness d is determined, and an evaluation value Ed is determined from the total sum of differences between the value of Rmeas(&lgr;) and the value of Rcalc(&lgr;). The film thickness d is changed in steps of &Dgr;d in a measuring retrieval range of from d1 to d2 to determine an evaluation value Ed at each film thickness, thereby obtaining an evaluation function E(d).

Abstract: A jet of water in a cylindrical form is supplied from a jet nozzle onto a measurement surface of a substrate to form a column of the water extending between the nozzle and the measurement surface Light is emitted from an irradiation fiber and transmitted through the column of water to the measurement surface. The light reflected by the measurement surface is received by a light-receiving fiber through the column of water. A measurement calculation unit measures the thickness of a film formed on the substrate, based on the intensity of the reflected light.

Abstract: Disclosed is a multi-beam image forming system, which has a light emitting unit including a plurality of light sources emitting a plurality of beams, and a table carrying a photosensitive film on which an image is formed with the plurality of beams. A sensor is provided on the table, and light amount of each of the light sources is detected by moving the table and the light source relative to each other. Further, based on the detected light amount of each of the light sources, compensation values are determined. The compensation values are used when the light sources are driven so that the light amount on the photosensitive film accurately corresponds to an image data.