Abstract: A therapeutic agent for soft tissue sarcoma (particularly synovial sarcoma) contains a histone deacetylase inhibitor (particularly compound of formula I) as an active ingredient

Abstract: A display device of the invention includes horizontal lines, longitudinal lines, electron emission elements, and a scanning circuit which performs the selection of the horizontal lines. The scanning circuit includes a non-selection voltage switch, a correction selection voltage switch, and an output voltage detection switch for the selected horizontal line for every horizontal line. The display device also includes a differential amplifier which is connected to a correction selection voltage input line, a horizontal line selection voltage line, and a correction selection voltage output line for every plurality of horizontal lines. The invention can suppress a voltage drop of the horizontal lines and, at the same time, can suppress the brightness irregularities of the display device.

Abstract: Input display data (D0, D1, D2) are converted into currents ij which are allowed to flow into respective pixels by a data/current conversion part 66, electric currents IN at end portions of a row wiring are calculated by a current IN calculation circuit 68-2 using the currents ij, and a voltage drop VN at an end portion of the row wiring is calculated by a voltage drop VN calculation circuit 68-4 using the current IN. On the other hand, the sum of the currents ij is calculated by a current ij calculation circuit 68-6, and a current Im?1 which flows between the pixels is calculated by a current Im?1 calculation circuit 68-7 using the sum of the currents ij and the currents IN.

Abstract: A therapeutic agent for soft tissue sarcoma (particularly synovial sarcoma), contains a histone deacetylase inhibitor (particularly a compound of formula I) as an active ingredient

Abstract: The present invention relates to a therapeutic agent for soft tissue sarcoma (particularly synovial sarcoma), which contains a histone deacetylase inhibitor (particularly compound A) as an active ingredient.

Abstract: To detect a dark current when an abnormal discharge occurs between an anode and respective electrodes, on an inner surface of a front substrate, a dark current detection electrode is formed in a state that the dark current detection electrode is positioned adjacent to the outside of a screen display region on which an anode is formed and on a plane substantially equal to a plane on which the anode is formed. Then, between an electrode terminal of the dark current detection electrode and a ground, an ammeter which detects the flow of a dark current and a DC power source having a preset voltage value which is more or less lower than a high voltage supplied to the anode are connected in series.

Abstract: A field strength between a control electrode in a non-aperture region and an electron emission layer is set such that an emission current between the electron emission layer and the control electrode assumes a value equal to or less than a threshold emission current density. On the other hand, a surface field strength of the electron emission layer in an aperture region is set such that, to obtain the desired brightness, an emission current between the electron emission layer and an anode becomes an operational current density.

Abstract: A field emission type display device adopts the structure in which one pixel is constituted of a combination of a plurality of small apertures and a plurality of small electron sources. Due to such a constitution, it is possible to reduce undesired electrons to control electrodes and to enhance of the heat resistance of the carbon nanotubes of electron sources, whereby it is possible to obtain a display device of high quality and long lifetime exhibiting the high-performance electron emission characteristic. Boron (B) is adhered to carbon nanotubes which constitute electron sources through the small apertures of the control electrodes and hence, the alignment of the small apertures and the small electron sources is ensured and the area of the electron source is set equal to or less than the area of the aperture.

Abstract: To provide a display device having the long lifetime and the high reliability by preventing the generation of a spark or a dark current between terminals of cathode lines and an anode, a shielding member is arranged between the terminals of the cathode lines and the anode so as to ensure shielding between the terminals and the anode.

Abstract: In a liquid crystal display device having a pair of substrates disposed to oppose one another and a liquid crystal layer sealed therebetween, an image signal driver circuit element disposed on a surface of one of the pair of substrates confronting the liquid crystal layer, and a plurality of wiring layers formed on the surface so as to connect the image signal driver circuit element electrically to external circuitry at least two of the plurality of the wiring layers belongs to a first group and are connected to input electrodes of the image signal driver circuit element for receiving logic signals, at least two of the plurality of the wiring layers other than those of the first group belongs to a second group and are connected to input electrodes of the image signal driver circuit element, other than those for receiving logic signals, which are electrically connected to a voltage supply, and at least one of the wiring layers belonging to the first group and the wiring layers belonging to the second group hav

Abstract: The semiconductor device having both vertically arranged CCDs and a horizontal CCD, such as, in connection with a solid state image pickup device, is provided with a horizontal CCD in which the transfer speed and the transfer efficiency of a horizontal CCD thereof is improved substantially. In such a device, a plurality of photodiodes are provided on a semiconductor substrate, vertical CCDs are provided on the semiconductor substrate for transferring signal charges of the photodiodes and a horizontal CCD is provided on the semiconductor substrate for transferring signal charges received from the vertical CCDs. The vertical and horizontal CCDs of such a semiconductor device are formed in a well structure provided on the substrate such that the depletion region extending from the channel of the horizontal CCD and a depletion region produced between the underlying substrate and the well are configured to meet each other under each of the transfer electrodes of the horizontal CCD.

Abstract: A solid-state imaging device including a plurality of photoelectric conversion elements (for example, photodiodes) arranged on a semiconductor substrate so as to form a matrix and read-out means for reading out signal charges which are stored in the photodiodes in accordance with incident light, in a predetermined order, is disclosed in which device the read-out means is made up of a plurality of active elements such as a MOS transistor connected to a photodiode, part of the active elements are used as a pixel amplifier for amplifying the signal charge of the photodiode in such a manner that the signal charge is converted into a current or voltage, the output of the pixel amplifier at a time the signal charge of the photodiode is not applied to the input part of the pixel amplifier and the output of the pixel amplifier at a time the signal charge of the photodiode is applied to the input part of the pixel amplifier are separately stored in a pair of storage means, and the outputs of a plurality of pairs of st

Abstract: A solid-state imaging device includes a vertical CCD shift register for transferring electric charge. The electrode of the vertical CCD located nearest to the substrate is extended outside of the region of the vertical CCD to a region of a layer where isolation is required. The layer is thus imparted with two functions, that is, the function of the CCD electrode and that of the iolation electrode. An overflow transistor is also provided to discharge excess charge produced by high intensity light.

Abstract: A high resolution solid-state color imaging apparatus having two-dimensionally disposed photoelectric sensors are arranged in rows and columns each having a color spectral responsivity characteristic such as by employing color filters. Each of the photoelectric sensors is scanned so as to obtain an intensity signal with respect to each row of each field, and wherein scanning of each field is for the same number of rows as that of each frame. Intensity signals are obtained only by the scanned output of each row. Additional intensity signals equal to half the number of said first mentioned intensity signals are obtained by a 2:1 subsampling of bandwidth-restricted signals by a filter along the vertical temporal frequency, thereby realizing high vertical resolution by the photoelectric image sensors of conventional row numbers and having compatibility with a conventional NTSC system and, furthermore, eliminating aliasing distortion.

Abstract: Vertical CCD registers constituting parts of an interline type CCD imaging device hold independently the signal charges transferred from photoelectric conversion elements and having different storage durations. Transfer of charge to the vertical CCD registers from the photoelectric conversion element is performed at least twice during one field period. The vertical CCD registers transfer the signal charges of different storage durations independent of one another.

Abstract: A solid-state imaging device having a plurality of semiconductor layers of a first conductivity type for photo-electric conversion provided on the surface of a first semiconductor layer of a second conductivity type which is formed on a part of one surface of a semiconductor substrate of the first conductivity type, a semiconductor layer of the first conductivity type for charge transfer provided on the surface of a second semiconductor layer of the second conductivity type which is formed on a part of the surface of the substrate, and a signal output means. The first semiconductor layer of the second conductivity type and the second semiconductor layer of the second conductivity type are formed in different steps so that the first semiconductor layer is disposed deeper than the second semiconductor layer.

Abstract: A solid-state imaging device is constructed by integrating a plurality of face plate elements of an imager in the shape of a matrix on a semiconductor substrate. The face plate elements are formed of photodiodes, in which charges corresponding to incident light are accumulated. The charges are converted into currents or voltages by a plurality of amplifying means disposed in the matrix and which are provided adjacent to the photodiodes. The currents or the voltages obtained through conversion are delivered out of the matrix through signal lines. To the signal lines a correlated double sampling circuit is connected, and this curcuit detects a difference in outputs of the amplifying means between a case when the charges of the photodiodes are not present in the input portions of the amplifying means and a case when they are present therein.

Abstract: A charge transfer type solid-state device incorporating a charge coupled device (CCD). In order to eliminate field after image and smear, at least two electrode pairs are provided in a vertical CCD shift register for transferring the signal charges stored in photoelectric conversion elements, the electrode pairs being disposed within the vertical pitch of the photoelectric conversion elements.

Abstract: In a semiconductor memory in which a large number of memory cells are arrayed in the shape of a matrix, arrangements are provided for a high-sensitivity read-out. In one embodiment, a writing circuit, a voltage amplifier and a sense amplifier are successively connected to a data line that connects input and output ends of the memory cells in an identical row, with the voltage amplifier being formed as a CTD voltage amplifier that is composed of two charge transfer gates and a driving gate located between them. In accordance with another embodiment, a charge supplying circuit and a charge transfer circuit can be coupled between the memory cells and the sense amplifier to allow information transfer without any substantial loss.

Abstract: This invention relates to an area imaging device having an array of picture elements formed of photodiodes and insulated-gate MOSTs which is vertically scanned by a shift register and horizontally scanned by a charge transfer device (CTD). The solid-state imaging device according to this invention has a transfer MOST provided between a vertical signal output line and a horizontal switch MOST, a resetting MOST connected to the junction between said transfer MOST and the horizontal switch MOST, and a mechanism for setting the vertical signal line at a reference potential just before signal transfer. The transfer MOST connected between the junction of the horizontal switch MOST and the resetting MOST and the vertical signal line is a double-gate MOST formed of a series connection of a transfer gate and another transfer gate. Therefore, the charges under the gate of the transfer MOST can be removed for fixed noise to be greatly reduced.