Patents by Inventor Toshiharu Saito

Toshiharu Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050263845
    Abstract: The present invention is to provide a metallized film capacitor having a compact size, a large capacitance and a low inductance whereas number of parts is reduced. The metallized film capacitor comprises: a plurality of capacitor elements (1) provided with metallized contact electrodes (2) on both ends in the width direction; a bus-bar (3) to connect each of a plurality of electrodes (2) on one end; and a capacitor case (5) to house a plurality of capacitor elements (1), wherein a plurality of capacitor elements (1) are arranged in the capacitor case such that one side of electrodes (2) faces the opening surface of capacitor case (1) and each electrode (2) of one of both ends of each capacitor element (1) are positioned generally coplanarly.
    Type: Application
    Filed: December 3, 2003
    Publication date: December 1, 2005
    Applicant: MASTSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Toshiharu Saito, Kohei Shiota, Hiroki Takeoka
  • Patent number: 6954349
    Abstract: A metallized film capacitor is made by winding or laminating a both-side metallized polypropylene (PP) film and a non-metallized PP film. Limiting the heat shrinkage factor and the thickness of the PP films, the position of deposited electrodes, and the rate of the peeled area of the deposited electrodes to a certain range provides a metallized film capacitor having improved dieletric strength, tan ?, and charge-discharge characteristics.
    Type: Grant
    Filed: June 6, 2002
    Date of Patent: October 11, 2005
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kohei Shiota, Toshihiro Sasaki, Shigeo Okabe, Hiroki Takeoka, Toshiyuki Nishimori, Toshiharu Saito
  • Publication number: 20040232465
    Abstract: A metallized film capacitor made by winding or laminating a both-side metallized polypropylene (PP) film and a non-metallized PP film. Limiting the heat shrinkage factor and the thickness of the PP films, the position of deposited electrodes, and the rate of the peeled area of the deposited electrodes to a curtain range provides a metallized film capacitor having improved dielectric strength, tan &dgr;, and charge-discharge characteristics.
    Type: Application
    Filed: June 3, 2004
    Publication date: November 25, 2004
    Inventors: Kohei Shiota, Toshihiro Sasaki, Shigeo Okabe, Hiroki Takeoka, Toshiyuki Nishimori, Toshiharu Saito
  • Publication number: 20040207970
    Abstract: The method of manufacturing double surface metallized insulating film of the present invention comprises vacuum depositing zinc or zinc-aluminum mixture on both sides of insulating film and winding the film to a product roll, wherein oxidizing gas is sprayed to an inner side deposited film when it is wound up. Also, during the deposition, oil layer is formed on at least one side of the film, and the deposited film on at least on one side is exposed to an oxygen-contained atmosphere, or oxygen-contained gas is sprayed to at least one side of the vacuum deposited film in the step of winding the film to a product roll, to form an oxide layer. According to the method of manufacturing of the present invention, the problem of a blocking that occurs as a sticking together and peeling off of the deposited films inside the product roll is avoided.
    Type: Application
    Filed: May 24, 2004
    Publication date: October 21, 2004
    Inventors: Kohei Shiota, Toshiharu Saito, Kazumi Osamura, Hiroki Takeoka, Kazuhiro Nakatsubo, Toshiyuki Nishimori, Masatoshi Shibuya, Toshihiro Sasaki, Shigeo Okabe
  • Patent number: 6751833
    Abstract: A method of manufacturing a laminated electrolytic capacitor by forming a dielectric made of organic polymer or a composite dielectric made of organic polymer and an oxide of a conductive metal is disclosed. An insulating layer is formed on the conductor, and an electrode is formed on the dielectric layer to complete the capacitive element. Plural capacitor elements are laminated and bonded to outside connection terminals.
    Type: Grant
    Filed: April 23, 2001
    Date of Patent: June 22, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toshiharu Saito, Motoi Kitano, Mutsuaki Murakami
  • Patent number: 6457229
    Abstract: An ignition coil device, which is mounted in a plug hole of an internal combustion engine, comprises a primary coil 1 wound to have larger diameter, a secondary coil 2 wound on a bobbin 2A and disposed inside the primary coil 1, an iron core 3 disposed inside the bobbin 2A, and a shielding case 10 disposed around the primary coil 1, a gap between the primary coil 1 and the secondary coil 2 being filled with an insulating resin 12. The primary coil 1 is made bobbinless so as to secure and increase the withstand voltages of the primary coil and the secondary coil.
    Type: Grant
    Filed: April 10, 2001
    Date of Patent: October 1, 2002
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akira Kanazawa, Noriyuki Murata, Toshiharu Saito, Harumi Aoki, Akira Nakatsuka
  • Publication number: 20020021997
    Abstract: Through the formation of an organic polymer film on the surface of a bare graphite sheet by electrodeposition or through the application of a resin film to the surface thereof, a good-quality coated graphite sheet of uniform thickness which has excellent electric insulation and a low thermal resistance and prevents graphite powder from separating while retaining thermal conductivity and flexibility of the bare graphite sheet can be provided. The organic polymer film is formed by electrodeposition from a resin selected from the group consisting of an anionic electrodeposition resin, a cationic electrodeposition resin, a thermosetting electrodeposition resin and a UV curing electrodeposition resin or is formed of polyimide. The resin film is applied by a method selected from the group consisting of dipping, spin coating, screen printing, brushing and spraying, using at least one resin selected from the group consisting of an epoxy resin, a polyimide resin and a fluororesin.
    Type: Application
    Filed: June 12, 2001
    Publication date: February 21, 2002
    Inventors: Akira Taomoto, Kenji Akami, Yasuo Kudo, Hiroki Takeoka, Toshiharu Saito, Souji Tsuchiya
  • Patent number: 6288890
    Abstract: A capacitor of the present invention employs one of i) polyimide directly formed by electrodeposition, ii) organic high polymer having a specific structure formed by electrodeposition, and iii) a composite film of the organic high polymer and oxide film of a conductor as dielectrics formed on the surface-roughened conductor. The organic high polymer used in the present invention contains carboxylic radical in its molecular structure. The capacitor of the present invention further comprises an opposite electrode at least containing conductive high polymer on the dielectrics. This conductive high polymer is formed by chemical oxydation-polymerization or both chemical oxydation-polymerization and electro-polymerization. The capacitor element as configured above is strong to mechanical stress, and possible to apply pressure during lamination.
    Type: Grant
    Filed: April 21, 1999
    Date of Patent: September 11, 2001
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toshiharu Saito, Motoi Kitano, Mutsuaki Murakami
  • Publication number: 20010017758
    Abstract: A capacitor of the present invention employs one of i) polyimide directly formed by electrodeposition, ii) organic high polymer having a specific structure formed by electrodeposition, and iii) a composite film of the organic high polymer and oxide film of a conductor as dielectrics formed on the surface-roughened conductor. The organic high polymer used in the present invention contains carboxylic radical in its molecular structure. The capacitor of the present invention further comprises an opposite electrode at least containing conductive high polymer on the dielectrics. This conductive high polymer is formed by chemical oxydation-polymerization or both chemical oxydation-polymerization and electro-polymerization. The capacitor element as configured above is strong to mechanical stress, and possible to apply pressure during lamination.
    Type: Application
    Filed: April 23, 2001
    Publication date: August 30, 2001
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Toshiharu Saito, Motoi Kitano, Mutsuaki Murakami
  • Patent number: 6255930
    Abstract: An ignition coil device, which is mounted in a plug hole of an internal combustion engine, comprises a primary coil 1 wound to have a first diameter, a secondary coil 2 wound on a bobbin 2A and disposed inside the primary coil 1, an iron core 3 disposed inside the bobbin 2A, and a shielding case 10 disposed around the primary coil 1, a gap between the primary coil 1 and the secondary coil 2 being filled with an insulating resin 12. The primary coil 1 is made bobbinless so as to secure and increase the withstand voltages of the primary coil and the secondary coil.
    Type: Grant
    Filed: October 1, 1999
    Date of Patent: July 3, 2001
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Akira Kanazawa, Noriyuki Murata, Toshiharu Saito, Harumi Aoki, Akira Nakatsuka
  • Patent number: 6098455
    Abstract: A miniaturized, inexpensive flowmeter capable of accurately measuring a flow rate comprises a flow rate detector including a plurality of thermal type flow rate detector elements mounted on a support plate, a power source for applying power to the flow rate detector, and a signal processor for calculating the flow rate from supplied power.
    Type: Grant
    Filed: September 29, 1995
    Date of Patent: August 8, 2000
    Assignee: Tokyo Gas Co., Ltd.
    Inventors: Kazumitsu Nukui, Toshiharu Saito, Tokudai Neda
  • Patent number: 5861556
    Abstract: A plurality of flow velocity sensors are vertically installed in line at different positions in the same cross section in a gas flow passage in a pipe. Detection signals from the flow velocity sensors are inputted to a mean flow velocity computing unit which calculates a mean value of flow velocity measurements. The mean flow rate calculated at the mean flow velocity computing unit is converted into a flow rate by a flow rate computing unit to be displayed by a display. Regardless of flow velocity distribution in the pipe, which may change due to differences in the pipe shape, flow rates are accurately measured. As a result, flow rates are accurately measured over a wide range.
    Type: Grant
    Filed: November 12, 1996
    Date of Patent: January 19, 1999
    Assignee: Tokyo Gas Co., Ltd.
    Inventors: Kazumitsu Nukui, Toshiharu Saito, Tokudai Neda
  • Patent number: 4952997
    Abstract: A semiconductor integrated-circuit apparatus includes an electro-conductive layer formed on a substrate, a plurality of internal cells formed on the electro-conductive layer, a plurality of bonding pads arranged around the internal cells, and a plurality of bias cells which are common to the plurality of internal cells and which generate a predetermined voltage. A plurality of bias buffer circuits supply the predetermined voltage generated in the bias cells to the internal cells.
    Type: Grant
    Filed: March 20, 1989
    Date of Patent: August 28, 1990
    Assignee: Fujitsu Limited
    Inventors: Eiji Sugiyama, Mitsuaki Natsume, Toshiharu Saito
  • Patent number: 4904887
    Abstract: A semiconductor integrated-circuit apparatus includes an electro-conductive layer formed on a substrate, a plurality of internal cells formed on the electro-conductive layer, a plurality of bonding pads arranged around the internal cells, and a plurality of bias cells which are common to the plurality of internal cells and which generate a predetermined voltage. A plurality of bias buffer circuits supply the predetermined voltage generated in the bias cells to the internal cells.
    Type: Grant
    Filed: August 4, 1988
    Date of Patent: February 27, 1990
    Assignee: Fujitsu Limited
    Inventors: Eiji Sugiyama, Mitsuaki Natsume, Toshiharu Saito
  • Patent number: 4891729
    Abstract: A semiconductor integrated-circuit apparatus includes a electro-conductive layer formed on a substrate, a plurality of internal cells formed on the electro-conductive layer, a plurality of bonding pads arranged around the internal cells, and a plurality of bias cells which are common to the plurality of internal cells and which generate a predetermined voltage. A plurality of bias buffer circuits supply the predetermined voltage generated in the bias cells to the internal cells.
    Type: Grant
    Filed: March 20, 1989
    Date of Patent: January 2, 1990
    Assignee: Fujitsu Limited
    Inventors: Eiji Sugiyama, Mitsuaki Natsume, Toshiharu Saito