Patents by Inventor Toshihide Ito

Toshihide Ito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190296146
    Abstract: A semiconductor device of an embodiment includes a silicon carbide layer; a gate electrode; a gate insulating layer disposed between the silicon carbide layer and the gate electrode; a first region disposed in the silicon carbide layer and containing nitrogen (N); and a second region disposed between the first region and the gate insulating layer, and containing at least one element selected from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu), hydrogen (H), deuterium (D), and fluorine (F).
    Type: Application
    Filed: August 27, 2018
    Publication date: September 26, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tatsuo SHIMIZU, Ryosuke IIJIMA, Toshihide ITO, Shunsuke ASABA, Yukio NAKABAYASHI, Shigeto FUKATSU
  • Patent number: 10344658
    Abstract: An object of the present invention is to provide an exhaust device capable of preventing a silencer from interfering with a component disposed in front of the silencer by allowing the silencer to slide down even when a load is input from a rear of the vehicle. A first tailpipe 34 is provided with an inclined bracket member 37. The inclined bracket member 37 has a sliding contact surface 37b inclined rearward and downward of a vehicle. A pressing portion 44 inclined rearward and downward of the vehicle is provided in an exhaust finisher bracket member 42 attached to an exhaust finisher 40. The pressing portion 44 contacts the sliding contact surface 37b when the exhaust finisher 40 is displaced forward of the vehicle. Then, the pressing portion 44 transmits the load so as to push down a silencer 32 via the sliding contact surface 37b.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: July 9, 2019
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Toshiaki Minowa, Naoki Ito, Toshihide Uchida
  • Publication number: 20190200465
    Abstract: A multilayer wiring board includes a base substrate including conductor layers and insulating layers formed such that the conductor layers and the insulating layers are laminated alternately and that the conductor layers include a first conductor pattern, an inter-pattern insulating resin layer formed on a surface of the base substrate and including an insulating resin layer and an insulating base material laminated on the insulating resin layer such that resin forming the insulating resin layer is filling gaps formed between portions of the first conductor pattern, and a second conductor pattern formed on an outer layer side of the first conductor pattern such that the inter-pattern insulating resin layer is formed between the first conductor pattern and the second conductor pattern. The base substrate, the inter-pattern insulating resin layer and the second conductor pattern form an antenna portion.
    Type: Application
    Filed: December 27, 2018
    Publication date: June 27, 2019
    Applicant: Ibiden Co., Ltd.
    Inventors: Yoji Mori, Toshihide Makino, Taichi Ito
  • Patent number: 10288903
    Abstract: A progressive addition lens includes a portion having a power for viewing a near field, a portion having a power for viewing a distance field further than the near field, and an portion connecting the distance portion and the near portion. The progressive addition lens includes an aspherical object-side surface and an aspherical eyeball-side surface and is formed in rotational symmetry with respect to a center of design of the progressive addition lens. The object-side surface includes a first stable region formed in rotational symmetry with respect to the center of design and including the center of design, and an aspherical region arranged outside of the first stable region to contact the first stable region and formed in rotational symmetry with respect to the center of design. A PV value (Peak to Valley) of a mean surface refractive power in the first stable region is 0.12 D or less.
    Type: Grant
    Filed: June 3, 2015
    Date of Patent: May 14, 2019
    Assignee: HOYA LENS THAILAND LTD.
    Inventors: Tadashi Kaga, Toshihide Shinohara, Ayumu Ito, Hiroshi Asami
  • Publication number: 20180330949
    Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include performing a first heat treatment of a first film at a first temperature not less than 500° C. and not more than 900° C. in a first atmosphere including oxygen. The first film includes silicon and oxygen and is deposited on a semiconductor member including silicon carbide. The method can include performing, after the first heat treatment, a second heat treatment of the first film at a second temperature not less than 1200° C. but less than 1400° C. in a second atmosphere including nitrogen.
    Type: Application
    Filed: February 12, 2018
    Publication date: November 15, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Shunsuke ASABA, Ryosuke IIJIMA, Yukio NAKABAYASHI, Shigeto FUKATSU, Toshihide ITO
  • Patent number: 9972657
    Abstract: According to one embodiment, a semiconductor light emitting element (110) includes a metal layer (40), a first to a fourth semiconductor layers (10a, 20a, 10b, 20b), a first and a second light emitting layers (30a, 30b), a first to a sixth electrodes (e1-e6), and a first inter-element interconnect section (12). The first semiconductor layer (10a) includes a first to a third regions (r1-r3). The second semiconductor layer (20a) is provided between the first region (r1) and the metal layer (40) and between the second region (r2) and the metal layer (40). The third semiconductor layer (10b) includes a fourth to a sixth regions (r4-r6). The fourth semiconductor layer (20b) is provided between the fourth region (r4) and the metal layer (40) and between the fifth region (r5) and the metal layer (40). The first inter-element interconnect section (12) is provided between the second electrode (e2) and the metal layer (40) and between the sixth electrode (e6) and the metal layer (40).
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: May 15, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Jumpei Tajima, Hiroshi Ono, Toshihide Ito, Kenjiro Uesugi, Shinya Nunoue
  • Publication number: 20170221962
    Abstract: According to one embodiment, a semiconductor light emitting element (110) includes a metal layer (40), a first to a fourth semiconductor layers (10a, 20a, 10b, 20b), a first and a second light emitting layers (30a, 30b), a first to a sixth electrodes (e1-e6), and a first inter-element interconnect section (12). The first semiconductor layer (10a) includes a first to a third regions (r1-r3). The second semiconductor layer (20a) is provided between the first region (r1) and the metal layer (40) and between the second region (r2) and the metal layer (40). The third semiconductor layer (10b) includes a fourth to a sixth regions (r4-r6). The fourth semiconductor layer (20b) is provided between the fourth region (r4) and the metal layer (40) and between the fifth region (r5) and the metal layer (40). The first inter-element interconnect section (12) is provided between the second electrode (e2) and the metal layer (40) and between the sixth electrode (e6) and the metal layer (40).
    Type: Application
    Filed: July 28, 2015
    Publication date: August 3, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Jumpei TAJIMA, Hiroshi ONO, Toshihide ITO, Kenjiro UESUGI, Shinya NUNOUE
  • Patent number: 9590009
    Abstract: A semiconductor light emitting element includes a base body, a first semiconductor layer, a second semiconductor layer, a first light emitting layer, a first conductive layer, a third semiconductor layer, a fourth semiconductor layer, a second light emitting layer, a second conductive layer, a first member, and a second member. The first member includes a first end portion and a second end portion. The first end portion is positioned between the base body and the first conductive layer and electrically connected to the first conductive layer, the second end portion not overlapping the second conductive layer. The second member includes a third end portion and a fourth end portion. The third end portion is positioned between the base body and the second conductive layer and electrically connected to the second conductive layer. The fourth end portion is electrically connected to the second end portion.
    Type: Grant
    Filed: August 11, 2015
    Date of Patent: March 7, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Jumpei Tajima, Hiroshi Ono, Toshihide Ito, Kenjiro Uesugi, Shinya Nunoue
  • Patent number: 9412910
    Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting portion, a first transparent conductive layer, and a second transparent conductive layer. The light emitting portion is provided between the first and second semiconductor layers. The second semiconductor layer is disposed between the first transparent conductive layer and the light emitting portion. The first transparent conductive layer includes oxygen. The second transparent conductive layer is provided between the second semiconductor layer and the first transparent conductive layer. The second transparent conductive layer has a refractive index higher than a refractive index of the first transparent conductive layer, and includes oxygen at a concentration higher than a concentration of oxygen included in the first transparent conductive layer.
    Type: Grant
    Filed: February 18, 2011
    Date of Patent: August 9, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshihide Ito, Taisuke Sato, Toshiyuki Oka, Shinya Nunoue
  • Publication number: 20160190393
    Abstract: According to one embodiment, a semiconductor light emitting element includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type including first and second semiconductor regions, a third semiconductor layer provided between the first and second semiconductor layers, a first electrode layer electrically connected to the first semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer. The second and third semiconductor layers are disposed between the second electrode layer and the first semiconductor layer. The second electrode layer includes a first metal region contacting the first semiconductor region and including silver, a second metal region contacting the second semiconductor region and including silver, and a third metal region contacting the first metal region and including silver. The first metal region is disposed between the third metal region and the first semiconductor region.
    Type: Application
    Filed: December 21, 2015
    Publication date: June 30, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Toshihide ITO, Shinya NUNOUE
  • Patent number: 9337396
    Abstract: According to one embodiment, a semiconductor light emitting device includes a first metal layer, a second metal layer, a third metal layer, a semiconductor light emitting unit and an insulating unit. The semiconductor light emitting unit is separated from the first metal layer in a first direction. The second metal layer is provided between the first metal layer and the semiconductor light emitting unit to be electrically connected to the first metal layer, and is light-reflective. The second metal layer includes a contact metal portion, and a peripheral metal portion. The third metal layer is light-reflective. The third metal layer includes an inner portion, a middle portion, and an outer portion. The insulating unit includes an first insulating portion, a second insulating portion, and a third insulating portion.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: May 10, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Katsuno, Satoshi Mitsugi, Toshihide Ito, Shinya Nunoue
  • Patent number: 9331235
    Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer of an n type including a nitride semiconductor, a first metal layer of an alloy containing Al and Au, and a second metal layer. The first metal layer is in contact with the first semiconductor layer. The second metal layer is in contact with the first metal layer. The second metal layer includes a metal different from Al. The first metal layer is disposed between the second metal layer and the first semiconductor layer.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: May 3, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshihide Ito, Hiroshi Katsuno, Shinya Nunoue
  • Patent number: 9299903
    Abstract: According to one embodiment, a semiconductor light emitting element includes a semiconductor layer, a first conductive layer, and a second conductive layer. The second conductive layer is provided between the semiconductor layer and the first conductive layer. A light transmittance of the second conductive layer is higher than a light transmittance of the first conductive layer. An extinction coefficient of the second conductive layer is 0.005 or less.
    Type: Grant
    Filed: March 9, 2015
    Date of Patent: March 29, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Satoshi Mitsugi, Toshihide Ito
  • Patent number: 9299901
    Abstract: According to one embodiment, a semiconductor light emitting device includes a metal layer, a stacked structural body, a first electrode, a pad electrode, a first conductive layer, a second conductive layer and an insulating layer. The metal layer includes a major surface having a first region, a second region, a third region and a fourth region. The stacked structural body includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer includes a first portion and a second portion. The second semiconductor layer is provided between the first region and the first portion. The first electrode is provided between the second region and the second portion. The pad electrode is provided on the third region. The first conductive layer is provided between the second region and the first electrode and between the third region and the pad electrode.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: March 29, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Katsuno, Satoshi Mitsugi, Toshihide Ito, Shinya Nunoue
  • Patent number: 9293657
    Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: March 22, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Katsuno, Satoshi Mitsugi, Toshihide Ito, Shinya Nunoue
  • Publication number: 20160079502
    Abstract: According to one embodiment, a semiconductor light emitting element includes a semiconductor layer, a first conductive layer, and a second conductive layer. The second conductive layer is provided between the semiconductor layer and the first conductive layer. A light transmittance of the second conductive layer is higher than a light transmittance of the first conductive layer. An extinction coefficient of the second conductive layer is 0.005 or less.
    Type: Application
    Filed: March 9, 2015
    Publication date: March 17, 2016
    Inventors: Satoshi Mitsugi, Toshihide Ito
  • Publication number: 20160056341
    Abstract: A semiconductor light emitting element includes a base body, a first semiconductor layer, a second semiconductor layer, a first light emitting layer, a first conductive layer, a third semiconductor layer, a fourth semiconductor layer, a second light emitting layer, a second conductive layer, a first member, and a second member. The first member includes a first end portion and a second end portion. The first end portion is positioned between the base body and the first conductive layer and electrically connected to the first conductive layer, the second end portion not overlapping the second conductive layer. The second member includes a third end portion and a fourth end portion. The third end portion is positioned between the base body and the second conductive layer and electrically connected to the second conductive layer. The fourth end portion is electrically connected to the second end portion.
    Type: Application
    Filed: August 11, 2015
    Publication date: February 25, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Jumpei TAJIMA, Hiroshi ONO, Toshihide ITO, Kenjiro UESUGI, Shinya NUNOUE
  • Publication number: 20160013359
    Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer of an n type including a nitride semiconductor, a first metal layer of an alloy containing Al and Au, and a second metal layer. The first metal layer is in contact with the first semiconductor layer. The second metal layer is in contact with the first metal layer. The second metal layer includes a metal different from Al. The first metal layer is disposed between the second metal layer and the first semiconductor layer.
    Type: Application
    Filed: September 24, 2015
    Publication date: January 14, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Toshihide ITO, Hiroshi KATSUNO, Shinya NUNOUE
  • Publication number: 20160005927
    Abstract: A semiconductor light emitting element includes a metal layer, a first semiconductor layer of a first conductivity type, a light emitting layer, a second semiconductor layer of a second conductivity type, a first electrode, a second electrode, and an insulating layer. The first semiconductor layer is separated from the metal layer in a first direction. The first semiconductor layer includes a first region, a second region, and a third region. The light emitting layer has a first side surface intersecting a second direction. The second semiconductor layer has a second side surface intersecting the second direction. The first electrode is electrically connected to the first region and the metal layer. The second electrode includes a first portion, and a second portion being continuous with the first portion. The insulating layer includes a first insulating portion and a second insulating portion.
    Type: Application
    Filed: April 23, 2015
    Publication date: January 7, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kenjiro UESUGI, Jumpei TAJIMA, Hiroshi ONO, Toshihide ITO, Shigeya KIMURA, Shinya NUNOUE
  • Patent number: 9231160
    Abstract: A semiconductor light emitting element includes a metal layer, a first semiconductor layer of a first conductivity type, a light emitting layer, a second semiconductor layer of a second conductivity type, a first electrode, a second electrode, and an insulating layer. The first semiconductor layer is separated from the metal layer in a first direction. The first semiconductor layer includes a first region, a second region, and a third region. The light emitting layer has a first side surface intersecting a second direction. The second semiconductor layer has a second side surface intersecting the second direction. The first electrode is electrically connected to the first region and the metal layer. The second electrode includes a first portion, and a second portion being continuous with the first portion. The insulating layer includes a first insulating portion and a second insulating portion.
    Type: Grant
    Filed: April 23, 2015
    Date of Patent: January 5, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenjiro Uesugi, Jumpei Tajima, Hiroshi Ono, Toshihide Ito, Shigeya Kimura, Shinya Nunoue