Patents by Inventor Toshihiko Akiba
Toshihiko Akiba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170229359Abstract: Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.Type: ApplicationFiled: April 22, 2017Publication date: August 10, 2017Inventors: Toshihiko Akiba, Bunji Yasumura, Masanao Sato, Hiromi Abe
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Patent number: 9711377Abstract: Provided is a semiconductor device with improved reliability that achieves the reduction in size. A semiconductor wafer is provided that has a first insulating member with an opening that exposes from which an upper surface of an electrode pad. Subsequently, after forming a second insulating member over a main surface of the semiconductor wafer, another opening is formed to expose the upper surface of the electrode pad. Then, a probe needle is brought into contact with the electrode pad, to write data in a memory circuit at the main surface of the semiconductor wafer. After covering the upper surface of the electrode pad with a conductive cover film, a relocation wiring is formed. In the Y direction, the width of the relocation wiring positioned directly above the electrode pad is equal to or smaller than the width of the opening formed in the first insulating member.Type: GrantFiled: October 18, 2015Date of Patent: July 18, 2017Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Toshihiko Akiba, Hiromi Shigihara, Kei Yajima
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Patent number: 9646901Abstract: Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.Type: GrantFiled: July 25, 2016Date of Patent: May 9, 2017Assignee: Renesas Electronics CorporationInventors: Toshihiko Akiba, Bunji Yasumura, Masanao Sato, Hiromi Abe
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Publication number: 20160336244Abstract: Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.Type: ApplicationFiled: July 25, 2016Publication date: November 17, 2016Inventors: Toshihiko Akiba, Bunji Yasumura, Masanao Sato, Hiromi Abe
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Publication number: 20160197050Abstract: A manufacturing method of a BGA, includes the steps of: providing a semiconductor chip having electrode pads; and removing a natural oxide film formed on the surface of each of the electrode pads. Further, a first film comprised of a conductive member is formed on the surface of the electrode pad exposed by removing the natural oxide film, a wire is connected with the first film, and part of the wire is brought into contact with the electrode pad to form an alloy layer at the interface between the wire and the electrode pad. The crystal structure of the first film is comprised of a body-centered cubic lattice or a hexagonal close-packed lattice. The cost of the semiconductor device can be reduced while the bonding reliability of wire bonding of the semiconductor device is ensured.Type: ApplicationFiled: March 16, 2016Publication date: July 7, 2016Inventors: Toshihiko AKIBA, Akihiro TOBITA, Yuki YAGYU
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Publication number: 20160133484Abstract: Provided is a semiconductor device with improved reliability that achieves the reduction in size. A semiconductor wafer is provided that has a first insulating member with an opening that exposes from which an upper surface of an electrode pad. Subsequently, after forming a second insulating member over a main surface of the semiconductor wafer, another opening is formed to expose the upper surface of the electrode pad. Then, a probe needle is brought into contact with the electrode pad, to write data in a memory circuit at the main surface of the semiconductor wafer. After covering the upper surface of the electrode pad with a conductive cover film, a relocation wiring is formed. In the Y direction, the width of the relocation wiring positioned directly above the electrode pad is equal to or smaller than the width of the opening formed in the first insulating member.Type: ApplicationFiled: October 18, 2015Publication date: May 12, 2016Inventors: Toshihiko AKIBA, Hiromi SHIGIHARA, Kei YAJIMA
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Patent number: 9293436Abstract: A manufacturing method of a BGA, includes the steps of: providing a semiconductor chip having electrode pads; and removing a natural oxide film formed on the surface of each of the electrode pads. Further, a first film comprised of a conductive member is formed on the surface of the electrode pad exposed by removing the natural oxide film, a wire is connected with the first film, and part of the wire is brought into contact with the electrode pad to form an alloy layer at the interface between the wire and the electrode pad. The crystal structure of the first film is comprised of a body-centered cubic lattice or a hexagonal close-packed lattice. The cost of the semiconductor device can be reduced while the bonding reliability of wire bonding of the semiconductor device is ensured.Type: GrantFiled: May 13, 2015Date of Patent: March 22, 2016Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Toshihiko Akiba, Akihiro Tobita, Yuki Yagyu
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Publication number: 20160035636Abstract: Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.Type: ApplicationFiled: October 6, 2015Publication date: February 4, 2016Inventors: Toshihiko Akiba, Bunji Yasumura, Masanao Sato, Hiromi Abe
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Publication number: 20150333030Abstract: A manufacturing method of a BGA, includes the steps of: providing a semiconductor chip having electrode pads; and removing a natural oxide film formed on the surface of each of the electrode pads. Further, a first film comprised of a conductive member is formed on the surface of the electrode pad exposed by removing the natural oxide film, a wire is connected with the first film, and part of the wire is brought into contact with the electrode pad to form an alloy layer at the interface between the wire and the electrode pad. The crystal structure of the first film is comprised of a body-centered cubic lattice or a hexagonal close-packed lattice. The cost of the semiconductor device can be reduced while the bonding reliability of wire bonding of the semiconductor device is ensured.Type: ApplicationFiled: May 13, 2015Publication date: November 19, 2015Inventors: Toshihiko AKIBA, Akihiro TOBITA, Yuki YAGYU
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Patent number: 9165845Abstract: Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.Type: GrantFiled: August 22, 2014Date of Patent: October 20, 2015Assignee: Renesas Electronics CorporationInventors: Toshihiko Akiba, Bunji Yasumura, Masanao Sato, Hiromi Abe
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Patent number: 8912540Abstract: Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.Type: GrantFiled: March 13, 2013Date of Patent: December 16, 2014Assignee: Renesas Electronics CorporationsInventors: Toshihiko Akiba, Bunji Yasumura, Masanao Sato, Hiromi Abe
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Publication number: 20140361299Abstract: Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.Type: ApplicationFiled: August 22, 2014Publication date: December 11, 2014Inventors: Toshihiko Akiba, Bunji Yasumura, Masanao Sato, Hiromi Abe
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Patent number: 8791574Abstract: In a manufacturing method of a semiconductor device having a multilevel interconnect layer including a low-k layer, a two-step cutting technique is used for dicing. After formation of a groove in a semiconductor wafer with a tapered blade, the groove is divided with a straight blade thinner than the groove width. The multilevel interconnect layer portion is cut while being covered with a tapered face and then the wafer is separated with a thin blade which is not brought into contact with the multilevel interconnect layer portion. The wafer can thus be diced without damaging a relatively fragile low-k layer.Type: GrantFiled: September 13, 2012Date of Patent: July 29, 2014Assignee: Renesas Electronics CorporationInventors: Toshihiko Akiba, Minoru Kimura, Masao Odagiri
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Patent number: 8415199Abstract: Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.Type: GrantFiled: December 2, 2011Date of Patent: April 9, 2013Assignee: Renesas Electronics CorporationInventors: Toshihiko Akiba, Bunji Yasumura, Masanao Sato, Hiromi Abe
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Publication number: 20130062747Abstract: In a manufacturing method of a semiconductor device having a multilevel interconnect layer including a low-k layer, a two-step cutting technique is used for dicing. After formation of a groove in a semiconductor wafer with a tapered blade, the groove is divided with a straight blade thinner than the groove width. The multilevel interconnect layer portion is cut while being covered with a tapered face and then the wafer is separated with a thin blade which is not brought into contact with the multilevel interconnect layer portion. The wafer can thus be diced without damaging a relatively fragile low-k layer.Type: ApplicationFiled: September 13, 2012Publication date: March 14, 2013Inventors: TOSHIHIKO AKIBA, Minoru Kimura, Masao Odagiri
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Patent number: 8298963Abstract: With a recent shrinking semiconductor process, insulating layers formed between interconnect layers are becoming thin. To avoid parasitic capacitance between them, materials of a low dielectric constant have been used for an insulating layer in a multilevel interconnect. Low-k materials, however, have low strength compared with the conventional insulating layers. Porous low-k materials are structurally fragile. The invention therefore provides a manufacturing method of a semiconductor device having a multilevel interconnect layer including a low-k layer. According to the method, in a two-step cutting system dicing in which after formation of a groove in a semiconductor water with a tapered blade, the groove is divided with a straight blade thinner than the groove width, the multilevel interconnect layer portion is cut while being covered with a tapered face and then the wafer is separated with a thin blade which is not brought into contact with the multilevel interconnect layer portion.Type: GrantFiled: January 20, 2010Date of Patent: October 30, 2012Assignee: Renesas Electronics CorporationInventors: Toshihiko Akiba, Minoru Kimura, Masao Odagiri
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Publication number: 20120077310Abstract: Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.Type: ApplicationFiled: December 2, 2011Publication date: March 29, 2012Inventors: Toshihiko AKIBA, Bunji Yasumura, Masanao Sato, Hiromi Abe
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Patent number: 8101433Abstract: Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.Type: GrantFiled: March 30, 2009Date of Patent: January 24, 2012Assignee: Renesas Electronics CorporationInventors: Toshihiko Akiba, Bunji Yasumura, Masanao Sato, Hiromi Abe
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Patent number: 7847413Abstract: A semiconductor device having a microcomputer chip and a plurality of high-speed memory chips and capable of making wiring lines of the memory chips equal in length is disclosed. The semiconductor device comprises a first wiring substrate, a microcomputer chip mounted over the first wiring substrate, a second wiring substrate disposed over the microcomputer chip, a plurality of first solder bumps for connecting the first and second wiring substrates with each other, and a plurality of second solder bumps as external terminals formed over a back surface of the wiring substrate. A first memory chip and a second memory chip, as high-speed memory chips, are stacked within the second wiring substrate, wiring of the first memory chip and that of the second memory chip are made equal in length within the second wiring substrate, and a completed package structure having the second wiring substrate is mounted over a completed package structure having the first wiring substrate.Type: GrantFiled: May 16, 2007Date of Patent: December 7, 2010Assignee: Renesas Electronics CorporationInventors: Toshihiko Akiba, Takahiro Naito
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Publication number: 20100301459Abstract: The warpage of a semiconductor wafer or a semiconductor chip is inhibited. A method includes a step of successively forming, pads formed over the main surface of the semiconductor chip, an insulation layer formed by covering the main surface such that the pads are exposed, an insulation film formed over the insulation layer such that the pads are exposed, rewirings formed over the insulation film and electrically coupled with the pads, respectively, an insulation film formed over each rewirings such that portions of the rewirings are exposed, and bumps respectively bonded with the regions of the rewirings exposed from the insulation film. Any one of the insulation film and the insulation layer is formed such that a portion of an insulation layer or the insulation film formed closer to the back surface side than the insulation film or the insulation layer is exposed.Type: ApplicationFiled: May 19, 2010Publication date: December 2, 2010Inventors: Toshihiko Akiba, Kenji Kozu, Hisao Shigihara