Patents by Inventor Toshihiko Fujii
Toshihiko Fujii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8592956Abstract: There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or general formula (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.Type: GrantFiled: November 9, 2011Date of Patent: November 26, 2013Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Tsutomu Ogihara, Daisuke Kori, Yusuke Biyajima, Takeru Watanabe, Toshihiko Fujii, Takeshi Kinsho
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Publication number: 20130302990Abstract: The invention provides an organic film composition comprises (A) a heat-decomposable polymer, (B) an organic solvent, and (C) an aromatic ring containing resin, with the weight reduction rate of (A) the heat-decomposable polymer from 30° C. to 250° C. being 40% or more by mass. There can be provided an organic film composition having not only a high dry etching resistance but also an excellent filling-up or flattening characteristics.Type: ApplicationFiled: April 30, 2013Publication date: November 14, 2013Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeru WATANABE, Seiichiro TACHIBANA, Toshihiko FUJII, Kazumi NODA, Toshiharu YANO, Takeshi KINSHO
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Patent number: 8450048Abstract: There is disclosed a method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, comprising at least; a step of coating a composition for resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a step of curing the coated composition for the resist underlayer film by a heat treatment at a temperature above 300° C. and 600° C. or lower for 10 to 600 seconds. There can be provided a method for forming a resist underlayer film, and a patterning process using the method to form a resist underlayer film in a multilayer resist film having at least three layers used in a lithography, gives a resist underlayer film having a lowered reflectance, a high etching resistance, and a high heat and solvent resistances, especially without wiggling during substrate etching.Type: GrantFiled: September 14, 2009Date of Patent: May 28, 2013Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Toshihiko Fujii, Tsutomu Ogihara
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Patent number: 8338078Abstract: A material comprising a novolac resin having a C6-C30 aromatic hydrocarbon group substituted with a sulfo group or an amine salt thereof is useful in forming a photoresist undercoat. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 gas for substrate processing.Type: GrantFiled: October 19, 2009Date of Patent: December 25, 2012Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Toshihiko Fujii, Takeru Watanabe, Youichi Ohsawa
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Publication number: 20120184103Abstract: There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.Type: ApplicationFiled: December 7, 2011Publication date: July 19, 2012Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tsutomu OGIHARA, Daisuke KORI, Yusuke BIYAJIMA, Takeru WATANABE, Toshihiko FUJII, Takeshi KINSHO
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Publication number: 20120171868Abstract: There is disclosed A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), one or more kinds of a compound represented by the following general formula (2), and one or more kinds of a compound, represented by the following general formula (3), and/or an equivalent body thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.Type: ApplicationFiled: December 5, 2011Publication date: July 5, 2012Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tsutomu OGIHARA, Takeru WATANABE, Yusuke BIYAJIMA, Daisuke KORI, Takeshi KINSHO, Toshihiko FUJII
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Publication number: 20120142193Abstract: There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or general formula (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.Type: ApplicationFiled: November 9, 2011Publication date: June 7, 2012Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tsutomu OGIHARA, Daisuke KORI, Yusuke BIYAJIMA, Takeru WATANABE, Toshihiko FUJII, Takeshi KINSHO
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Publication number: 20120108071Abstract: There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.Type: ApplicationFiled: October 7, 2011Publication date: May 3, 2012Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tsutomu OGIHARA, Daisuke KORI, Yusuke BIYAJIMA, Toshihiko FUJII, Takeru WATANABE, Takeshi KINSHO
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Publication number: 20120045900Abstract: The invention provides a composition for a resist underlayer film, the composition for a resist underlayer film to form a resist underlayer film of a multilayer resist film used in lithography, wherein the composition comprises at least (A) a fullerene derivative that is a reaction product of a substance having a fullerene skeleton with a 1,3-diene compound derivative having an electron-withdrawing group and (B) an organic solvent. There can be a composition for a resist underlayer film for a multilayer resist film used in lithography, the composition giving a resist underlayer film having excellent high dry etching resistance, capable of suppressing wiggling during substrate etching with high effectiveness, and capable of avoiding a poisoning problem in upperlayer patterning that uses a chemical amplification resist; a process for forming a resist underlayer film; a patterning process; and a fullerene derivative.Type: ApplicationFiled: July 14, 2011Publication date: February 23, 2012Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeru WATANABE, Toshihiko FUJII, Takeshi KINSHO, Tsutomu OGIHARA
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Publication number: 20110195362Abstract: There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.Type: ApplicationFiled: January 27, 2011Publication date: August 11, 2011Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeru Watanabe, Takeshi Kinsho, Tsutomu Ogihara, Katsuya Takemura, Toshihiko Fujii, Daisuke Kori
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Publication number: 20110177459Abstract: There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.Type: ApplicationFiled: December 27, 2010Publication date: July 21, 2011Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tsutomu OGIHARA, Takeru WATANABE, Takeshi KINSHO, Katsuya TAKEMURA, Toshihiko FUJII, Daisuke KORI
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Publication number: 20110115001Abstract: An electronic control device controls a control object. An electronic component configured to control the control object is mounted on an electronic substrate. An electrical signal line is formed on the electronic substrate. The electrical signal line transmits an electrical signal. A metal is press-fitted into the electronic substrate and passes through the electronic substrate to be exposed to both surfaces of the electronic substrate. An electronic element has a contact surface portion which comes into contact with a surface of the electronic substrate when the electronic element is mounted on the electronic substrate. The electronic element is connected to the electrical signal line. The electronic element is mounted on the electronic substrate such that the contact surface portion comes into contact with the metal exposed to the both surfaces of the electronic substrate and the electrical signal line connected to the contact surface portion does not come into contact with the metal.Type: ApplicationFiled: November 12, 2010Publication date: May 19, 2011Applicant: FUJITSU TEN LIMITEDInventor: Toshihiko FUJII
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Patent number: 7871761Abstract: Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harmful effect such as trailing skirts of a resist pattern of an upper layer resist. Specifically, there is provided a material for forming a lower layer of a chemically amplified photoresist layer comprising a crosslinkable polymer and a thermal acid generator that can generate an acid by heating at 100° C. or greater and is represented by the general formula (1a): R1CF2SO3?(R2)4N+??(1a), as well as a resist lower layer substrate comprising a resist lower layer formed using said material.Type: GrantFiled: July 27, 2007Date of Patent: January 18, 2011Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Toshihiko Fujii, Youichi Ohsawa
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Patent number: 7745104Abstract: There is disclosed a bottom resist layer composition for a multilayer-resist film used in lithography comprising, at least, a polymer comprising a repeating unit represented by the following general formula (1). Thereby, there can be provided a bottom resist layer composition that exhibits optimum n value and k value on exposure to shorter wavelengths, excellent etching resistance under conditions for etching substrates, and is promising for forming a bottom resist layer used for a multilayer-resist process such as a silicon-containing bilayer resist process or a trilayer resist process using a silicon-containing intermediate resist layer.Type: GrantFiled: July 10, 2007Date of Patent: June 29, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Toshihiko Fujii, Takanobu Takeda
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Publication number: 20100104977Abstract: A material comprising a novolac resin having a C6-C30 aromatic hydrocarbon group substituted with a sulfo group or an amine salt thereof is useful in forming a photoresist undercoat. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 gas for substrate processing.Type: ApplicationFiled: October 19, 2009Publication date: April 29, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Toshihiko Fujii, Takeru Watanabe, Youichi Ohsawa
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Publication number: 20100099044Abstract: There is disclosed a method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, comprising at least; a step of coating a composition for resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a step of curing the coated composition for the resist underlayer film by a heat treatment at a temperature above 300° C. and 600° C. or lower for 10 to 600 seconds. There can be provided a method for forming a resist underlayer film, and a patterning process using the method to form a resist underlayer film in a multilayer resist film having at least three layers used in a lithography, gives a resist underlayer film having a lowered reflectance, a high etching resistance, and a high heat and solvent resistances, especially without wiggling during substrate etching.Type: ApplicationFiled: September 14, 2009Publication date: April 22, 2010Applicant: SHIN-ETSU CHEMICAL CO.,LTD.Inventors: Jun Hatakeyama, Toshihiko Fujii, Tsutomu Ogihara
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Patent number: 7632624Abstract: A material comprising a specific bisphenol compound of formula (1) is useful in forming a photoresist undercoat wherein R1 and R2 are H, alkyl, aryl or alkenyl, R3 and R4 are H, alkyl, alkenyl, aryl, acetal, acyl or glycidyl, R5 and R6 are alkyl having a ring structure, or R5 and R6 bond together to form a ring. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 and Cl2/BCl3 gases for substrate processing.Type: GrantFiled: May 10, 2007Date of Patent: December 15, 2009Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Toshihiko Fujii, Takeru Watanabe, Katshiro Kobayashi
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Patent number: 7550247Abstract: A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.Type: GrantFiled: August 18, 2005Date of Patent: June 23, 2009Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Mutsuo Nakashima, Yoshitaka Hamada, Katsuya Takemura, Kazumi Noda, Toshihiko Fujii
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Patent number: 7510820Abstract: In the lithographic multilayer resist process, a material comprising a copolymer of a hydroxy-containing vinylnaphthalene with hydroxy-free olefins is useful in forming a resist undercoat. The undercoat-forming material has a high transparency and optimum values of n and k so that it functions as an antireflective coating during short-wavelength exposure, and has etching resistance during substrate processing by etching.Type: GrantFiled: November 27, 2006Date of Patent: March 31, 2009Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Toshihiko Fujii
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Publication number: 20080038662Abstract: There is disclosed a bottom resist layer composition for a multilayer-resist film used in lithography comprising, at least, a polymer comprising a repeating unit represented by the following general formula (1). Thereby, there can be provided a bottom resist layer composition that exhibits optimum n value and k value on exposure to shorter wavelengths, excellent etching resistance under conditions for etching substrates, and is promising for forming a bottom resist layer used for a multilayer-resist process such as a silicon-containing bilayer resist process or a trilayer resist process using a silicon-containing intermediate resist layer.Type: ApplicationFiled: July 10, 2007Publication date: February 14, 2008Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Toshihiko Fujii, Takanobu Takeda