Abstract: A display device is provided including a first substrate comprising a resin material provided with a plurality region provided with a plurality of pixels including a display device, and a second substrate provided facing the first substrate and installed with the pixel region, wherein an outer periphery side surface of the first substrate having a taper shape and including a barrier layer covering an upper layer, lower layer and the outer periphery side surface of the first substrate.

Abstract: A display device includes a first substrate having flexibility, a second substrate having flexibility arranged facing the first substrate, a light emitting element arranged in a display region of the first substrate, and a filling material covering the light emitting element and extending from the display region to an end part of the first substrate and the second substrate. The filling material is a solid and is provided on the inner side from the first substrate and second substrate.

Abstract: [PROBLEM] To provide a display device capable of improving the transmittance of light at an opening that passes light while maintaining high reflectivity in a reflective layer. [RESOLUTION MEANS] Use a metal film and an reflection increasing film to configure a reflective layer provided in an element substrate to effectively utilize light of a light source. Leave a silicon nitride film that is one portion of the reflection increasing film in the opening that passes the light of the light source while removing the metal film. At this time, the film thickness of the silicon nitride film in the reflection increasing film is ¼ the wavelength of incident light and, on the other hand, the film thickness of the silicon nitride film in the opening is ½ the wavelength of the incident light. The silicon nitride film that is one portion of the reflection increasing film and a passivation film provided in a top layer of an interlayer dielectric film are laminated in the opening to achieve this structure.

Abstract: A display device is provided including a first substrate comprising a resin material provided with a plurality region provided with a plurality of pixels including a display device, and a second substrate provided facing the first substrate and installed with the pixel region, wherein an outer periphery side surface of the first substrate having a taper shape and including a barrier layer covering an upper layer, lower layer and the outer periphery side surface of the first substrate.

Abstract: A display device is comprising an insulating layer provided above a substrate, a pixel electrode provided on the insulating layer, a bank layer covering a periphery edge part of the pixel electrode, a light emitting layer provided across to a surface layer part of the bank layer from the pixel electrode, and a common electrode provided on the light emitting layer, wherein the pixel electrode including a slanting region having a periphery edge part becoming higher compared to a center region, and an edge part of the bank layer overlaps the slanting region of the pixel electrode.

Abstract: A display device includes a first substrate having flexibility, a second substrate having flexibility arranged facing the first substrate, a light emitting element arranged in a display region of the first substrate, and a filling material covering the light emitting element and extending from the display region to an end part of the first substrate and the second substrate. The filling material is a solid and is provided on the inner side from the first substrate and second substrate.

Abstract: The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed.

Abstract: The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.

Abstract: Improvement in characteristics of a SELAX-TFT and throughput of ELA crystallization is achieved. When a thin film transistor using pseudo single crystal semiconductor and a thin film transistor using particulate polysilicon semiconductor are formed on a single substrate, the film thickness of an amorphous semiconductor film before crystallization in the pseudo single crystal semiconductor portion is greater than that in the polysilicon semiconductor portion.

Abstract: Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×1010 cm?2 or more to 4.0×1010 cm?2 or less.

Abstract: The present invention provides an active matrix display device capable of raising its integration density by reducing the drive circuit area on the active matrix substrate. A semiconductor film presents in the boundary between a quasi-strip crystalline semiconductor film and another semiconductor film is used to form conductive lines, resistors, source/drain electrodes and the like which are respectively connected to thin film transistors formed using the quasi-strip crystalline semiconductor film.

Abstract: The present invention provides a fabrication method of a display device which aims at the reduction of fabricating man-hours.

Abstract: The present invention provides a manufacturing method of a display device which can decrease the lowering of a yield rate of the display device attributed to the aggregations generated by pseudo single crystallization of a silicon film. A manufacturing method of a display device includes a semiconductor film reforming step which reforms a semiconductor film into a second state in which the semiconductor film possesses elongated crystalline particles by radiating a laser beam to the semiconductor film in a first state, an aggregation detecting step which detects the aggregation of the semiconductor film which is generated in the semiconductor film reforming step, and a defect determination step which determines a product as a defective product when a position of the aggregation is present in the inside of the predetermined region and determines the product as a good product when the position of the aggregation is present outside the predetermined region.

Abstract: The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed.

Abstract: The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.

Abstract: A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode.

Abstract: The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.

Abstract: The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.

Abstract: Improvement in characteristics of a SELAX-TFT and throughput of ELA crystallization is achieved. When a thin film transistor using pseudo single crystal semiconductor and a thin film transistor using particulate polysilicon semiconductor are formed on a single substrate, the film thickness of an amorphous semiconductor film before crystallization in the pseudo single crystal semiconductor portion is greater than that in the polysilicon semiconductor portion.

Abstract: An image display has gate-lines and signal-lines in a matrix shape, and has thin film transistors each having: an island-shaped semiconductor layer having source region, drain region, and channel region sandwiched between them; a first insulation film formed between the semiconductor layer and a gate electrode of the same layer as that of the gate-lines; an interlayer insulation film formed above the semiconductor layer; and a source electrode and a drain electrode existing in the same layer as that of the signal-lines. Each capacitor has: a storage electrode of the same layer as that of the gate-lines; an insulation film formed on the storage electrode and being in contact therewith; and an electrode formed on the insulation film and being in contact therewith and existing in the same layer as that of the signal-lines.