Patents by Inventor Toshihiko Kanayama
Toshihiko Kanayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10692986Abstract: A compound film of tungsten and germanium useful for semiconductor devices, a semiconductor device using the compound film and a method and an apparatus for manufacturing the compound film. Various embodiments include a compound film of tungsten and germanium, which has a germanium/tungsten composition ratio of 0.2 or more and less than 6 and includes an optical energy gap. The compound film of tungsten and germanium is produced on a substrate by causing a material gas of tungsten and a material gas of germanium to undergo a chemical reaction in at least one of a region in a gas phase and a region on the substrate. Various embodiments include a semiconductor device including a stack structure in which a semiconductor substrate, a compound film of tungsten and germanium having a germanium/tungsten composition ratio of 1 or more and 3.2 or less, and a metal electrode are laminated in this order.Type: GrantFiled: June 15, 2017Date of Patent: June 23, 2020Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Naoya Okada, Noriyuki Uchida, Toshihiko Kanayama
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Publication number: 20190207007Abstract: A compound film of tungsten and germanium useful for semiconductor devices, a semiconductor device using the compound film and a method and an apparatus for manufacturing the compound film. Various embodiments include a compound film of tungsten and germanium, which has a germanium/tungsten composition ratio of 0.2 or more and less than 6 and includes an optical energy gap. The compound film of tungsten and germanium is produced on a substrate by causing a material gas of tungsten and a material gas of germanium to undergo a chemical reaction in at least one of a region in a gas phase and a region on the substrate. Various embodiments include a semiconductor device including a stack structure in which a semiconductor substrate, a compound film of tungsten and germanium having a germanium/tungsten composition ratio of 1 or more and 3.2 or less, and a metal electrode are laminated in this order.Type: ApplicationFiled: June 15, 2017Publication date: July 4, 2019Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Naoya OKADA, Noriyuki UCHIDA, Toshihiko KANAYAMA
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Patent number: 8367030Abstract: The present invention relates to a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound is a compound of a transition metal and silicon, and has a transition metal-containing silicon cluster as a unit structure, the transition metal-containing silicon cluster having a structure in which a transition metal atom is surrounded by seven to sixteen silicon atoms, two of which are first and second neighbor atoms to the transition metal atom.Type: GrantFiled: February 25, 2009Date of Patent: February 5, 2013Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Toshihiko Kanayama, Noriyuki Uchida
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Patent number: 8168964Abstract: A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.Type: GrantFiled: February 27, 2008Date of Patent: May 1, 2012Assignee: NEC CorporationInventors: Hidefumi Hiura, Fumiyuki Nihei, Tetsuya Tada, Toshihiko Kanayama
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Patent number: 8093580Abstract: A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.Type: GrantFiled: October 24, 2007Date of Patent: January 10, 2012Assignee: NEC CorporationInventors: Hidefumi Hiura, Satoru Toguchi, Tetsuya Tada, Toshihiko Kanayama
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Publication number: 20110002833Abstract: An object of the present invention is to provide a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound has, as a unit structure, a transition metal-containing silicon cluster in which an energy gap EHL between highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) is wide. The present invention relates to a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound is a compound of a transition metal and silicon, and has a transition metal-containing silicon cluster as a unit structure, the transition metal-containing silicon cluster having a structure in which a transition metal atom is surrounded by seven to sixteen silicon atoms, two of which are first and second neighbor atoms to the transition metal atom.Type: ApplicationFiled: February 25, 2009Publication date: January 6, 2011Inventors: Toshihiko Kanayama, Noriyuki Uchida
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Publication number: 20100102292Abstract: A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.Type: ApplicationFiled: February 27, 2008Publication date: April 29, 2010Applicant: NEC CorporationInventors: Hidefumi Hiura, Fumiyuki Nihei, Tetsuya Tada, Toshihiko Kanayama
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Patent number: 7687801Abstract: It is to provide a thermodynamically and chemically stable dopant material which can achieve controls of the pn conduction types, carrier density, and threshold value of gate voltage, and a manufacturing method thereof. Further, it is to provide an actually operable semiconductor device such as a transistor with an excellent high-speed operability and high-integration characteristic. Provided is a dopant material obtained by depositing, on a carbon nanotube, a donor with a smaller ionization potential than an intrinsic work function of the carbon nanotube or an acceptor with a larger electron affinity than the intrinsic work function of the carbon nanotube. The ionization potential of the donor in vacuum is desired to be 6.4 eV or less, and the electron affinity of the acceptor in vacuum to be 2.3 eV or more.Type: GrantFiled: January 5, 2006Date of Patent: March 30, 2010Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Hidefumi Hiura, Tetsuya Tada, Toshihiko Kanayama
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Publication number: 20100051902Abstract: A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.Type: ApplicationFiled: October 24, 2007Publication date: March 4, 2010Inventors: Hidefumi Hiura, Satoru Toguchi, Tetsuya Tada, Toshihiko Kanayama
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Publication number: 20100012923Abstract: It is to provide a thermodynamically and chemically stable dopant material which can achieve controls of the pn conduction types, carrier density, and threshold value of gate voltage, and a manufacturing method thereof. Further, it is to provide an actually operable semiconductor device such as a transistor with an excellent high-speed operability and high-integration characteristic. Provided is a dopant material obtained by depositing, on a carbon nanotube, a donor with a smaller ionization potential than an intrinsic work function of the carbon nanotube or an acceptor with a larger electron affinity than the intrinsic work function of the carbon nanotube. The ionization potential of the donor in vacuum is desired to be 6.4 eV or less, and the electron affinity of the acceptor in vacuum to be 2.3 eV or more.Type: ApplicationFiled: January 5, 2006Publication date: January 21, 2010Inventors: Hidefumi Hiura, Tetsuya Tada, Toshihiko Kanayama
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Publication number: 20090053503Abstract: A precursor composition for porous film comprising at least one member selected from the group consisting of compounds represented by the following general formulas: Si(OR1)4 and Ra(Si)(OR2)4-a (in the formulas, R1 represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R2 represents a monovalent organic group; a is an integer ranging from 1 to 3, provided that R, R1 and R2 may be the same or different); a heat decomposable organic compound capable of being thermally decomposed at a temperature of not less than 250° C.; and at least one element selected from the group consisting of elements each having a catalytic action, and organic solvent. A hydrophobic compound is subjected to a gas-phase polymerization reaction in the presence of a solution of this precursor composition to thus form a hydrophobic porous film having a low dielectric constant, a low refractive index and high mechanical strength.Type: ApplicationFiled: March 17, 2006Publication date: February 26, 2009Inventors: Nobutoshi Fujii, Takahiro Nakayama, Toshihiko Kanayama, Kazuo Kohmura, Hirofumi Tanaka
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Patent number: 7408635Abstract: An optical measurement of a crystalline sample to be measured. The sample is irradiated with an exciting light from the polarization direction in which the Raman scattering is prohibited by the selection rule. When a metal probe is brought to proximity to the sample to be measured, the selection rule is eased locally only in the proximity portion near the probe end in order that Raman scattering becomes active. Thus, a Raman signal only from the proximity portion near the probe end is detected. An optical measurement apparatus having an optical arrangement for measuring a signal light re-emitted from a sample to be measured when the sample is irradiated with an exciting light is provided. The optical measurement apparatus comprises a means for limiting the polarization state of the exciting light or signal light and a means for bringing a metal probe near the sample to be measured.Type: GrantFiled: September 3, 2004Date of Patent: August 5, 2008Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Vladimir Pobortchi, Toshihiko Kanayama, Tetsuya Tada
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Patent number: 7247548Abstract: The present invention achieves a shallow junction of a source and a drain, and provides a doping method which makes device properties reproducible and a semiconductor device fabricated using the method. In the present invention, doping for the semiconductor is conducted by attaching a molecular species with a higher electron affinity or lower ionization energy out of fullerene derivatives or metallocenes to the semiconductor surface to induce charge transfer from the molecule to the semiconductor.Type: GrantFiled: December 6, 2004Date of Patent: July 24, 2007Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Tetsuya Tada, Toshihiko Kanayama, Hidefumi Hiura
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Publication number: 20070161213Abstract: A self-aligned/self-limited processing is carried out on a nanowire material typified by a carbon nanotube or on the vicinity of the nanowire material alone in the following manner. External energy is applied to the nanowire material. Joule heat, light, or a thermoelectron is thereby locally formed and acts as minute energy. The minute energy causes a chemical reaction of an externally added raw material and causes the conversion of a property of the nanowire material.Type: ApplicationFiled: October 30, 2006Publication date: July 12, 2007Inventors: Hidefumi Hiura, Tetsuya Tada, Toshihiko Kanayama
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Publication number: 20070013907Abstract: An optical measurement of a crystalline sample to be measured. The sample is irradiated with an exciting light from the polarization direction in which the Raman scattering is prohibited by the selection rule. When a metal probe is brought to proximity to the sample to be measured, the selection rule is eased locally only in the proximity portion near the probe end in order that Raman scattering becomes active. Thus, a Raman signal only from the proximity portion near the probe end is detected. An optical measurement apparatus having an optical arrangement for measuring a signal light re-emitted from a sample to be measured when the sample is irradiated with an exciting light is provided. The optical measurement apparatus comprises a means for limiting the polarization state of the exciting light or signal light and a means for bringing a metal probe near the sample to be measured.Type: ApplicationFiled: September 3, 2004Publication date: January 18, 2007Inventors: Vladimir Pobortchi, Toshihiko Kanayama, Tetsuya Tada
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Patent number: 7138688Abstract: A doping method includes the step of attaching molecules or clusters to the surface of a semiconductor substrate to enable charge transfer from the molecules or clusters to the substrate surface, thereby inducing carriers underneath the substrate surface. A semiconductor device is fabricated through attachment of molecules or clusters to the surface of a semiconductor substrate. The attachment enables charge transfer from the molecules or clusters to the substrate surface to induce carriers underneath the substrate surface.Type: GrantFiled: September 5, 2003Date of Patent: November 21, 2006Assignees: National Institute of Advanced Industrial Science and Technology, NEC CorporationInventors: Toshihiko Kanayama, Takehide Miyazaki, Hidefumi Hiura
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Patent number: 7052653Abstract: Disclosed is a microsize driving device in which falling of track proteins from an arrangement of motor protein molecules arranged on a linear track groove provided on a substrate is suppressed and utilization of kinetic energy of track proteins as a driving energy is made possible by controlling the moving direction to a single direction. Namely, provided is a microsize driving device which comprises a substrate, an arrangement of motor protein molecules such as, for example, kinesin molecules deposited on the bottom of a linear track groove provided thereon and track proteins such as, for example, microtubules disposed thereon and is characterized in that the said linear track groove has side surfaces shaped in such a structure as to permit a linear movement of the track proteins moving in a certain specific direction but to inhibit the track proteins moving in the reverse direction thereto causing reversion for the movement in the above mentioned specific direction.Type: GrantFiled: December 27, 2000Date of Patent: May 30, 2006Assignee: Japan as represented by the Secretary of Agency of Industrial Science and TechnologyInventors: Yuichi Hiratsuka, Taro Uyeda, Tetsuya Tada, Toshihiko Kanayama
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Publication number: 20050130395Abstract: The present invention achieves a shallow junction of a source and a drain, and provides a doping method which makes device properties reproducible and a semiconductor device fabricated using the method. In the present invention, doping for the semiconductor is conducted by attaching a molecular species with a higher electron affinity or lower ionization energy out of fullerene derivatives or metallocenes to the semiconductor surface to induce charge transfer from the molecule to the semiconductor.Type: ApplicationFiled: December 6, 2004Publication date: June 16, 2005Inventors: Tetsuya Tada, Toshihiko Kanayama, Hidefumi Hiura
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Publication number: 20040121567Abstract: A doping method includes the step of attaching molecules or clusters to the surface of a semiconductor substrate to enable charge transfer from the molecules or clusters to the substrate surface, thereby inducing carriers underneath the substrate surface. A semiconductor device is fabricated through attachment of molecules or clusters to the surface of a semiconductor substrate. The attachment enables charge transfer from the molecules or clusters to the substrate surface to induce carriers underneath the substrate surface.Type: ApplicationFiled: September 5, 2003Publication date: June 24, 2004Applicants: Nat'l Inst. of Advan. Industrial Science and Tech., NEC CorporationInventors: Toshihiko Kanayama, Takehide Miyazaki, Hidefumi Hiura
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Patent number: 6746537Abstract: In order to provide a coating apparatus in which an edge can be fixed rigidly so as to apply a coating agent at a uniform thickness, edge units are provided which comprise edge support members and edges which are attached to the tips of the edge support members so as to slide on a flexible tape support member. The edge which is not disposed at both ends in the running direction of the flexible tape support member is fixed to the edge support member by an edge fixing member which is inserted in a direction from a bottom portion of the coating apparatus toward the edge. The edge is fixed so as to be pulled into a recessed section formed on the edge support member by the edge fixing member.Type: GrantFiled: August 19, 2002Date of Patent: June 8, 2004Assignee: Mitsubishi Materials CorporationInventors: Tsutomu Fukuda, Toshihiko Kanayama