Abstract: A defect detecting apparatus for detecting defects on a substrate sample (wafer) having circuit patterns such as interconnections. The defect detecting apparatus is provided with stages that can be moved arbitrarily in each of the X, Y, Z, and ? directions in a state that the substrate sample is mounted thereon, an illumination optical system for illuminating the circuit patterns from one or plural directions, and a detection optical system for detecting reflection light, diffraction light, or scattered light coming from an inspection region being illuminated through almost the entire hemispherical surface having the substrate sample as the bottom surface. The NA (numerical aperture) thereby falls within a range of 0.7 to 1.0. Harmful defects or foreign substances can be detected so as to be separated from non-defects such as surface roughness of interconnections.

Abstract: A scanning probe microscope for measuring a surface shape of a sample by scanning a probe by bringing said probe close to, or into contact with, a sample surface and measuring a physical interaction occurring between the probe and the sample, includes a measurement area specific which specifies a measurement area of the sample on the basis of the image of the sample surface, and a measurement shape corrector which corrects the measurement result of the sample surface on the basis of the condition of the probe.

Abstract: Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradiating predetermined areas of the polycrystalline semiconductor film intermittently with a continuous wave laser beam while a position of the substrate with respect to the continuous wave laser beam is scanned, crystal grains larger than those of the polycrystalline semiconductor film other than the predetermined areas are formed in each of the predetermined areas locally in the polycrystalline semiconductor film, wherein first thin film transistors are formed in the predetermined areas while second thin film transistors are formed in the polycrystalline semiconductor film other than the predetermined areas thereof.

Abstract: In order to provide a scanning probe microscope capable of measuring with high throughput distribution information relating to local characteristics of a sample concurrently with accurate three-dimensional shape information of the sample without damaging the sample, the speed of approach to each measurement location is increased by controlling the approach of the sample and probe by the provision of a high-sensitivity proximity sensor of the optical type. Also, additional information relating to the distribution of material quality on the sample can be obtained without lowering the scanning speed by: applying a voltage to the probe, or measuring the response on vibrating the probe, or detecting the local optical intensity of the sample surface concurrently with obtaining sample height data and concurrently with the contact period with the sample, whilst ensuring that the probe is not dragged over the sample, by bringing the probe into contact with the sample intermittently.

Abstract: An ultraviolet laser-generating device, for use in a defect inspection apparatus and a method thereof, etc., comprising: a laser ray source for irradiating and emitting a basic wave of laser ray therefrom; a wavelength converter device for receiving the basic wave of laser ray emitted from the laser ray source and for converting it into an ultraviolet laser ray composed of a multiplied high harmonic light of the basic wave of laser ray; and a container having an inlet window, upon which the basic wave of laser ray emitted from the laser ray source is incident upon, and an outlet window for emitting the ultraviolet laser ray composed of the multiplied high harmonic light of the basic wave of laser ray, and installing the wavelength converter device therein, wherein the container is hermetically sealed and is filled up with an inert gas, such as nitrogen or argon gas, therein.

Abstract: With a scanning probe microscope, if a plurality of sample properties are measured using a scanning scheme of allowing a probe to approach and withdraw from a sample, the sample properties need to be accurately and reliably detected in the minimum required measurement time. Further, the acting force between the probe and the sample varies depending on the type of the probe and the wear condition of a probe tip. Thus, disadvantageously, property values acquired using different probes cannot be compared with one another unless the artifactual effect of the measuring probes are eliminated. In accordance with the present invention, with a scanning probe microscope, the probe is brought into intermittent contact with the sample, while driving means repeatedly allows the probe to approach and withdraw from the sample with a variable amplitude. The sample property is thus acquired at a high speed.

Abstract: A semiconductor device manufacturing technique measures simultaneously a plurality of points on a sample to realize a high-speed three-dimensional shape measurement and reflects it to setting of a processing condition in a semiconductor device process, thereby making it possible to realize stable device manufacture with high precision. A three-dimensional shape measuring apparatus loaded on a processing apparatus such as an etcher, a coater-developer, a baking machine, or a lithography machine measures a plurality of points (500) on a sample (300) at high speed by arranging a plurality of measurement heads (100) for measuring a three-dimensional shape of the sample and by combining it with movement of an loader/stage (200) loading the sample (300). By using this measurement result, feeding back for correcting a processing condition with respect to the subsequent sample (300) and feeding forward for correcting a processing condition in the next step are realized.

Abstract: An apparatus for measuring an alignment accuracy between overlaid alignment marks formed to each of alignment mark portions on every plural chip units or exposure units arranged on a substrate to be measured includes an XY stage movable X and Y directions while mounting the substrate, an illumination system for illuminating each of the alignment mark portions, a detecting system having a lens for collecting a reflection light, a focusing system for focusing the reflection light, a scanning system for scanning a reflection light image and an image sensor receiving reflection light image for conversion into an image signal. An alignment accuracy calculator measures the alignment accuracy between the overlaid alignment marks.

Abstract: A defect inspection apparatus for inspecting a fine circuit pattern with high resolution to detect a defective portion is constructed to have an objective lens for detecting an image of a sample, a laser illumination unit for illuminating the sample through the objective lens, a unit for reducing the coherence of the laser illumination, an accumulation type detector, and a unit for processing the detected image signal.

Abstract: A DNA inspecting apparatus including driving means for relatively changing positions of the multi-spot lights and a position of the DNA chip so as to detect the fluorescent lights in such a manner that a desired area on the DNA chip is irradiated with the multi-spot lights, and a control system for determining and inspecting DNA information about the to-be-inspected DNA chip from fluorescent light intensities and fluorescent light positions of the desired area on the DNA chip, the fluorescent light intensities and the fluorescent light positions being detected by the driving means and the fluorescent light detecting means.

Abstract: A pattern defect inspection apparatus is capable of detecting defects, without being affected by non-uniform thickness of a thin film formed on a sample, even when using monochromatic light, such as a laser. The apparatus comprises a laser to illuminate a sample, coherence suppression optics to reduce laser beam coherence, a condenser to condense the laser beam onto a pupil plane of an objective lens, and a detector to detect the light reflected from a circuit pattern formed on a sample. The condenser is designed so that the intensity of light illuminating the sample under test can be partially adjusted according to the type of laser beam illumination condensed on the pupil of the objective lens. Variations in reflected light intensity caused by non-uniform film thickness on the surface of the sample are therefore reduced, and shading is minimized in the detected image to allow detecting of fine defects.

Abstract: A method of inspecting a DNA chip and an apparatus therefor that allow a picture to be reconstructed in the following steps: A plurality of irradiation spots are formed on a DNA probe array mounted on a stage. Then, the stage is displaced in X, Y directions so as to execute a scanning, thereby irradiating substantially all the entire surface of the DNA probe array. Next, a plurality of emitted fluorescent lights, which are generated from the plurality of irradiation spot portions on the DNA probe array, are converged and are then detected simultaneously by multi detectors. Finally, a data processing apparatus processes the detected signals, thereby reconstructing the picture.

Abstract: An Inspection apparatus and method includes utilizing an emitter which emits a light beam, an illumination optical system, a detection optical system, and a processor. The illumination optical system includes a polarization controller, a coherence reducer, and an objective lens, for illuminating a specimen with a polarization condition controlled and coherency reduced light beam through the objective lens. The detection optical system includes an imaging lens and a sensor for detecting an image of the specimen illuminated by the light beam through the illumination optical system. The processor processes a signal outputted from the sensor and detects a defect on the specimen.

Abstract: Apparatus for fabricating a display device includes a stage capable of mounting an insulating substrate of the display device and moving the insulating substrate, linear scales which detect a position or moving distance of the substrate, a laser oscillator which generates continuous-waves laser light, a modulator which turns ON/OFF the continuous-wave laser light, a beam forming optic which shapes the continuous-wave laser light passing through the modulator into a linear or rectangular form, an objective lens which projects the at least one of the laser light on the insulating substrate so as to irradiate the insulating substrate with the laser light.

Abstract: The apparatus for processing an in-process substrate by generating a plasma have a processing chamber with an observation window, in which the in-process substrate is disposed; plasma generating means for generating a plasma in the inside of the processing chamber; irradiation means for projecting a light beam into the inside of the processing chamber through the observation window; detection means for detecting the light projected and reflected from the inside wall of the chamber by the irradiation means; and data processing means for obtaining information on the state of contamination of the inside wall of the processing chamber by processing signals obtained through detection of the reflected light by the detection means, and thereby permitting simultaneously monitoring of both the state of contamination of an inside wall of the processing chamber and foreign materials suspended in the processing chamber, with a single observation window and an optical system composed of one unit.

Abstract: A method and apparatus for detecting defects are provided for detecting harmful defects or foreign matter with high sensitivity on an object to be inspected with a transparent film, such as an oxide film, by reducing noise due to a circuit pattern. The apparatus for detecting defects includes a stage part on which a substrate specimen is put and which is arbitrarily movable in each of the X-Y-Z-? directions, an illumination system for irradiating the circuit pattern with light from an inclined direction, and an image-forming optical system for forming an image of an irradiated detection area on a detector from the upward and oblique directions. With this arrangement, diffracted light and scattered light caused on the circuit pattern through the illumination by the illumination system is collected. Furthermore, a spatial filter is provided on a Fourier transform surface for blocking the diffracted light from a linear part of the circuit pattern.

Abstract: An apparatus for inspecting defects including a table which mounts a specimen to be inspected and which is movable in a plane, an ultraviolet light source for emitting ultraviolet light, an illuminating unit for illuminating the specimen mounted on the table with light emitted from the ultraviolet light source, a detecting unit for forming an image of the specimen illuminated by the illuminating unit and for detecting the image with an image sensor, and an image processing unit for processing the image detected by the image sensor and for outputting information about defects detected on the specimen. The illuminating unit and detecting unit are disposed in a clean environment which is supplied therein with clean gas and which is separated from outside by a wall.

Abstract: An Inspection apparatus and method includes utilizing a laser source which emits an ultraviolet laser beam, an illumination optical system, a detection optical system, and a processor. The illumination optical system includes a polarization controller, a coherence reducer and an objective lens for illuminating a specimen with a polarization condition controlled and coherency reduced ultraviolet laser beam through the objective lens. The detection optical system includes an imaging lens and a sensor for detecting an image of the specimen illuminated by the ultraviolet laser beam through the illumination optical system. The processor processes a signal outputted from the sensor and detects a defect on the specimen.

Abstract: The active layer (active region) of the thin-film transistor making up the driver circuit is obtained by reformation implemented by scanning the continuous-wave laser light, condensed into a linear form or a rectangle form extremely longer in the longitudinal direction than in the transverse direction, along a given direction crossing the longitudinal direction. This is made up of a poly silicon film containing crystal grains having no grain boundaries crossing the direction of current flow, that is, a band-like polycrystalline silicon film. As a result, it is possible to implement a display device having stable and high quality active elements outside the display region on the insulating substrate.

Abstract: In order to provide a scanning probe microscope capable of measuring with high throughput distribution information relating to local characteristics of a sample concurrently with accurate three-dimensional shape information of the sample without damaging the sample, the speed of approach to each measurement location is increased by controlling the approach of the sample and probe by the provision of a high-sensitivity proximity sensor of the optical type. Also, additional information relating to the distribution of material quality on the sample can be obtained without lowering the scanning speed by: applying a voltage to the probe, or measuring the response on vibrating the probe, or detecting the local optical intensity of the sample surface concurrently with obtaining sample height data and concurrently with the contact period with the sample, whilst ensuring that the probe is not dragged over the sample, by bringing the probe into contact with the sample intermittently.