Abstract: A terahertz-wave element includes a waveguide (2, 4, 5) that includes an electro-optic crystal and allows light to propagate therethrough, and a coupling member (7) that causes a terahertz wave to enter the waveguide (2, 4, 5). The propagation state of the light propagating through the waveguide (2, 4, 5) changes as the terahertz wave enters the waveguide (2, 4, 5) via the coupling member (7).

Abstract: A subject information acquiring apparatus including: a generation section that generates terahertz waves to be irradiated at a test object in a plurality of kinds of states including a state in which a target material that takes a specific portion of the test object as a target has been introduced into the test object; a detection section that detects terahertz waves that are propagated from the test object and outputs a signal; a processing section that acquires information of the test object using the signals detected by the detecting section and information relating to a characteristic portion of a wavelength spectrum of the target material.

Abstract: A terahertz-wave element includes a waveguide (2, 4, 5) that includes an electro-optic crystal and allows light to propagate therethrough, and a coupling member (7) that causes a terahertz wave to enter the waveguide (2, 4, 5). The propagation state of the light propagating through the waveguide (2, 4, 5) changes as the terahertz wave enters the waveguide (2, 4, 5) via the coupling member (7).

Abstract: An analysis apparatus for analyzing a gas by a terahertz wave or an infrared ray comprises a generator for generating the terahertz wave or the infrared ray; a trapping unit having a trapping film for trapping a gas and being placed to be capable of causing interaction between the gas trapped by the trapping film and the terahertz wave or infrared ray generated by the generator; and a detector for detecting the interaction of the gas with the terahertz wave or infrared ray; wherein the trapping unit comprises a structure for contact with a site evolving the gas; and the structure holds the trapping film separately from the site.

Abstract: A terahertz-wave element includes a waveguide (2, 4, 5) that includes an electro-optic crystal and allows light to propagate therethrough, and a coupling member (7) that causes a terahertz wave to enter the waveguide (2, 4, 5). The propagation state of the light propagating through the waveguide (2, 4, 5) changes as the terahertz wave enters the waveguide (2, 4, 5) via the coupling member (7).

Abstract: A sensor device has an optical waveguide containing an electro-optic crystal for propagating light, a coupler provided adjacent to the optical waveguide to propagate a terahertz wave generated from the electro-optic crystal as a result of the propagation of light in the optical waveguide, and a detector for detecting the terahertz wave propagating through the coupler or the light propagating through the optical waveguide. The terahertz wave is totally reflected in a section of the coupler opposite to a section where the coupler is adjacent to the optical waveguide while passing through and propagating in the optical waveguide, and in the total reflection section, the terahertz wave interacts with a subject placed close to the total reflection section.

Abstract: An information acquiring apparatus includes a light source portion for generating pulse-shaped pump light, and first and second probe light in synchronization with each other. A generating portion generates terahertz pulses when irradiated with the pump light. A detecting portion detects pulses of terahertz radiation from the object. A first delay portion adjusts an optical path difference between optical paths of the pump light and the first probe light reaching the detecting portion, so that the detecting portion detects a field intensity of a fixed point on the time domain waveform of the terahertz pulse from the object, following the fixed point. A second delay portion adjusts an optical path difference between the optical path of the pump light and the second probe light reaching the detecting portion by a sum of an additional optical path adjustment amount and the optical path difference, so that the detecting portion obtains the time domain waveform.

Abstract: An optical pulse generating apparatus that supplies pump light and probe light includes a light source and a modulation unit configured to modulate light emitted from the light source, thereby dividing the light into the pump light and the probe light. The modulation unit is configured such that a frequency for modulating the light is variable. The modulation unit changes a difference between a moment of the pump light incident on an object and a moment of the probe light incident on the object by changing the frequency.

Abstract: In an examining apparatus or method, values of thickness and characteristic of an object, or distributions thereof can be simultaneously acquired. The examining apparatus includes a portion 9 for irradiating an object 2 with radiation, a portion 10 for detecting the radiation from the object, an acquiring portion 26, a storing portion 21 and a calculating portion 20. The acquiring portion acquires transmission time associated with detection time of radiation, and amplitude of the radiation. The storing portion beforehand stores relationship data between the transmission time and amplitude, and representative values of characteristic of the object. The calculating portion obtains values of thickness and characteristic of the object based on the transmission time, amplitude and relationship data.

Abstract: A terahertz wave generation element is provided, which includes: an optical waveguide including a core of electro-optic crystal; an optical coupler for extracting a terahertz wave generated from the optical waveguide when light propagates in the optical waveguide to a space; and a reflecting layer disposed on the opposite side to the optical coupler with respect to the core of the optical waveguide, so as to reflect the generated terahertz wave. According to the element, it is possible to provide a generation element that can generate a relatively high intensity terahertz wave efficiently by photoexcitation or generate a terahertz wave having a relatively narrow pulse width, so as to flexibly control waveform shaping of the generated terahertz wave.

Abstract: An apparatus for acquiring information on a time waveform of a terahertz wave is comprised of a terahertz wave-generating unit, a waveform information-detecting unit, and a delay unit for changing the time after the terahertz wave is generated in the generating unit until it is detected as waveform information of the terahertz wave in the detecting unit, wherein the delay unit is configured so as to change a propagating distance of the terahertz wave generated by the generating unit, and associates waveform information of the terahertz wave, which is detected in the detecting unit, and the propagating distance every terahertz wave generated by the generating unit.

Abstract: A terahertz-wave generating element includes a waveguide including an electro-optic crystal; an optical coupling member that extracts a terahertz wave, which is generated from the electro-optic crystal as a result of light propagating through the waveguide, to a space; and at least two electrodes that cause a first-order electro-optic effect in the electro-optic crystal by applying an electric field to the waveguide so as to change a propagation state of the light propagating through the waveguide. A crystal axis of the electro-optic crystal of the waveguide is set such that the terahertz wave generated by a second-order nonlinear optical process and the light propagating through the waveguide are phase-matched.

Abstract: The present invention provides an apparatus and a method for transforming a time waveform of an electromagnetic wave into a time waveform suited for signal processing and the like so as to measure the time waveform. A wavelet transform is performed on a first time waveform of an electromagnetic wave, such as a terahertz wave, measured in advance, and a second time waveform suited for signal processing and having a high correlation with a mother wavelet used in the wavelet transform is formed by controlling a wavelet expansion coefficient. In a second measurement process and onward of a target object, a transforming unit, such as a bias voltage controller, is used to transform the electromagnetic wave into a transformed time waveform so as to measure the time waveform.

Abstract: Optical pulse compensator having a chirp unit including a normal dispersion fiber that provides a positive chirp to an input pulse and having a dispersion compensator including an anomalous fiber is provided. The nonlinear coefficient and the absolute value of the second-order group-velocity dispersion of the anomalous fiber that forms the dispersion compensator is set such that a soliton order becomes one or more, and the fiber length of the anomalous dispersion fiber is made to be equal to or smaller than a length required for optical soliton formation.

Abstract: Provided is a photoconductive element which solves a problem inherent in an element for generating/detecting a terahertz wave by photoexcitation that terahertz wave generation efficiency is limited by distortions and defects of a low temperature grown semiconductor. The photoconductive element includes: a semiconductor substrate; a semiconductor low temperature growth layer; and a semiconductor layer, which is positioned between the semiconductor low temperature growth layer and the semiconductor substrate and is thinner than the semiconductor low temperature growth layer, in which the semiconductor low temperature growth layer includes a semiconductor which lattice-matches with the semiconductor layer and does not lattice-match with the semiconductor substrate.

Abstract: An object of examination is irradiated with an electromagnetic wave including a frequency component from 30 GHz to 30 THz and a Fourier transform image of the transmitted or reflected electromagnetic wave from the object of examination is obtained. The obtained Fourier transform image is subjected to a spatial frequency filtering processing. This method can visualize only the part to be visualized in an imaging operation using a terahertz wave.

Abstract: Optical pulse compensator having a chirp unit including a normal dispersion fiber that provides a positive chirp to an input pulse and having a dispersion compensator including an anomalous fiber is provided. The nonlinear coefficient and the absolute value of the second-order group-velocity dispersion of the anomalous fiber that forms the dispersion compensator is set such that a soliton order becomes one or more, and the fiber length of the anomalous dispersion fiber is made to be equal to or smaller than a length required for optical soliton formation.

Abstract: A pulse laser apparatus includes a laser configured to generate a pulse of a laser beam, a fiber amplifier, and a pulse compressor. The fiber amplifier includes a rare-earth doped fiber that exhibits normal dispersion at a wavelength of the laser beam generated from the laser. The pulse laser apparatus further includes a unit configured to give a loss to energy portions in a wavelength region corresponding to a zero-dispersion wavelength of the rare-earth doped fiber and/or a wavelength region longer than the zero-dispersion wavelength within a wavelength spectrum of the laser beam having been chirped in the fiber amplifier.

Abstract: An oscillator has a negative resistance element and a resonator along with a capacitor electrically connected in parallel with the negative resistance element relative to a power bias circuit, a capacitance of the capacitor being so selected as to suppress any parasitic oscillation due to the power bias circuit and allow oscillation at a resonance frequency due to the negative resistance element and the resonator.

Abstract: A method of manufacturing photo-semiconductor device that has a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of the second substrate and the electrodes of the photoconductive semiconductor film being held in contact with each other.