Patents by Inventor Toshihiko Takeda

Toshihiko Takeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210292927
    Abstract: A method for refining bismuth is provided, which comprises recovering bismuth from a solution obtained after recovery of noble metals from a copper electrolytic slime. The method comprises: 1) a neutralization step of adding alkali to an acid solution to adjust the pH to the range of 2.0 or more and 3.
    Type: Application
    Filed: January 30, 2017
    Publication date: September 23, 2021
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Hiroshi TAKENOUCHI, Nobuyuki KAJI, Toshihiko NAGAKURA, Kenji TAKEDA, Satoshi ASANO
  • Publication number: 20210269913
    Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a method for producing a vapor deposition mask and a vapor deposition mask preparation body capable of simply producing the vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a plurality of slits 15 are provided and a resin mask 20 are stacked. Openings 25 required for composing a plurality of screens are provided in the resin mask 20. The openings 25 correspond to a pattern to be produced by vapor deposition. Each of the slits 15 is provided at a position of overlapping with an entirety of at least one screen.
    Type: Application
    Filed: May 24, 2021
    Publication date: September 2, 2021
    Applicant: Dai Nippon Printing Co., Ltd.
    Inventors: Toshihiko Takeda, Katsunari Obata, Hiromitsu Ochiai
  • Publication number: 20210207258
    Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.
    Type: Application
    Filed: March 19, 2021
    Publication date: July 8, 2021
    Applicant: Dai Nippon Printing Co., Ltd.
    Inventors: Katsunari OBATA, Toshihiko TAKEDA, Hiroshi KAWASAKI, Hiroyuki NISHIMURA, Atsushi MAKI, Hiromitsu OCHIAI, Yoshinori HIROBE
  • Patent number: 11041237
    Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a method for producing a vapor deposition mask and a vapor deposition mask preparation body capable of simply producing the vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a plurality of slits 15 are provided and a resin mask 20 are stacked. Openings 25 required for composing a plurality of screens are provided in the resin mask 20. The openings 25 correspond to a pattern to be produced by vapor deposition. Each of the slits 15 is provided at a position of overlapping with an entirety of at least one screen.
    Type: Grant
    Filed: February 19, 2018
    Date of Patent: June 22, 2021
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Toshihiko Takeda, Katsunari Obata, Hiromitsu Ochiai
  • Publication number: 20210168969
    Abstract: A vapor chamber in which an enclosed space is formed, and a working fluid is sealed in this space, the enclosed space including: a plurality of condensate flow paths through which a fluid that is the working fluid in a condensing state flows; and vapor flow paths through which a vapor that is the working fluid in a vaporizing state flows, wherein each of projecting parts with which each of the vapor flow paths is provided has a projecting amount varying in an extending direction of the vapor flow paths; a pitch for opening parts that allow the vapor flow paths and the condensate flow paths to communicate varies in the extending direction of the vapor flow paths; or wall parts that separate the flow paths each have a given relationship with a transverse cross section of a given flow path.
    Type: Application
    Filed: May 30, 2019
    Publication date: June 3, 2021
    Applicant: DAI NIPPON PRINTING CO., LTD.
    Inventors: Shinichiro TAKAHASHI, Takayuki OTA, Kazunori ODA, Toshihiko TAKEDA, Kiyotaka TAKEMATSU, Terutoshi MOMOSE, Yoko NAKAMURA
  • Publication number: 20210167290
    Abstract: A vapor deposition mask capable of correctly performing confirmation of whether a shape pattern of openings formed in a resin mask is normal or similar confirmation while satisfying both high definition and lightweight, a vapor deposition mask preparation body for obtaining the vapor deposition mask, a frame-equipped vapor deposition mask including the vapor deposition mask, and a method for producing an organic semiconductor element using the frame-equipped vapor deposition mask. The aforementioned problem is solved by using, in a vapor deposition mask including a metal mask in which a through hole is formed and a resin mask in which an opening corresponding to a pattern to be produced by vapor deposition is formed at a position overlapping with the through hole, the metal mask and the resin mask being stacked, wherein the resin mask has about 40% or less of light ray transmittance at a wavelength of about 550 nm.
    Type: Application
    Filed: January 20, 2021
    Publication date: June 3, 2021
    Applicant: Dai Nippon Printing Co., Ltd.
    Inventors: Toshihiko TAKEDA, Hiroshi KAWASAKI, Katsunari OBATA
  • Publication number: 20210156020
    Abstract: In a method for forming a vapor deposition pattern using a vapor deposition mask provided with a plurality of openings corresponding to a pattern that is produced by vapor deposition, and forming a vapor deposition pattern in a vapor deposition target, the method includes a close contact step of disposing the vapor deposition mask on one surface side of the vapor deposition target, disposing a pressing member and a magnetic plate in layer in this order on the other surface side of the vapor deposition target, and bringing the vapor deposition target and the vapor deposition mask into close contact with each other by using magnetism of the magnetic plate, and a vapor deposition pattern forming step of causing a vapor deposition material released from a vapor deposition source to adhere to the vapor deposition target through openings after the close contact step, and forming the vapor deposition pattern in the vapor deposition target.
    Type: Application
    Filed: February 5, 2021
    Publication date: May 27, 2021
    Applicant: Dai Nippon Printing Co., Ltd.
    Inventors: Toshihiko TAKEDA, Yoshinori HIROBE, Yoshiko MIYADERA, Katsunari OBATA, Naoto YAMADA
  • Publication number: 20210159414
    Abstract: A step of preparing a resin plate-equipped metal mask including a metal mask in which a slit is provided and a resin plate, and a step of laser irradiation from the metal mask side to form an opening corresponding to a pattern to be produced by vapor deposition in the resin plate are included, wherein in the step of forming the opening, by using a laser mask in which an opening region corresponding to the opening and an attenuating region that is positioned in a periphery of the opening region and attenuates energy of the laser, the opening corresponding to the pattern to be produced by vapor deposition is formed with respect to the resin plate with the laser that passes through the opening region, and a thin part is formed in a periphery of the opening of the resin plate with the laser that passes through the attenuating region.
    Type: Application
    Filed: February 3, 2021
    Publication date: May 27, 2021
    Applicant: Dai Nippon Printing Co., Ltd.
    Inventors: Yoshiko MIYADERA, Takayoshi NIRENGI, Toshihiko TAKEDA
  • Patent number: 10982317
    Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: April 20, 2021
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Katsunari Obata, Toshihiko Takeda, Hiroshi Kawasaki, Hiroyuki Nishimura, Atsushi Maki, Hiromitsu Ochiai, Yoshinori Hirobe
  • Patent number: 10978641
    Abstract: A vapor deposition mask capable of correctly performing confirmation of whether a shape pattern of openings formed in a resin mask is normal or similar confirmation while satisfying both high definition and lightweight, a vapor deposition mask preparation body for obtaining the vapor deposition mask, a frame-equipped vapor deposition mask including the vapor deposition mask, and a method for producing an organic semiconductor element using the frame-equipped vapor deposition mask. The aforementioned problem is solved by using, in a vapor deposition mask including a metal mask in which a through hole is formed and a resin mask in which an opening corresponding to a pattern to be produced by vapor deposition is formed at a position overlapping with the through hole, the metal mask and the resin mask being stacked, wherein the resin mask has about 40% or less of light ray transmittance at a wavelength of about 550 nm.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: April 13, 2021
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Toshihiko Takeda, Hiroshi Kawasaki, Katsunari Obata
  • Publication number: 20210098702
    Abstract: A vapor deposition mask preparation body in which a metal mask is provided on one surface of a resin plate for obtaining a resin mask, and a protective sheet with peel strength not less than about 0.0004 N/10 mm and less than about 0.2 N/10 mm in conformity with JIS Z-0237:2009 is provided on the other surface of the resin plate is prepared, with respect to the vapor deposition mask preparation body, the resin plate is irradiated with laser light from the metal mask side to form a resin mask opening corresponding to a pattern to be produced by vapor deposition in the resin plate, and the protective sheet is peeled off from the resin mask in which the resin mask opening corresponding to the pattern to be produced by vapor deposition is formed.
    Type: Application
    Filed: November 9, 2020
    Publication date: April 1, 2021
    Applicant: Dai Nippon Printing Co., Ltd.
    Inventors: Toshihiko TAKEDA, Kumiko HOKARI, Yasuko SONE, Katsunari OBATA
  • Patent number: 10947616
    Abstract: In a method for forming a vapor deposition pattern using a vapor deposition mask provided with a plurality of openings corresponding to a pattern that is produced by vapor deposition, and forming a vapor deposition pattern in a vapor deposition target, the method includes a close contact step of disposing the vapor deposition mask on one surface side of the vapor deposition target, disposing a pressing member and a magnetic plate in layer in this order on the other surface side of the vapor deposition target, and bringing the vapor deposition target and the vapor deposition mask into close contact with each other by using magnetism of the magnetic plate, and a vapor deposition pattern forming step of causing a vapor deposition material released from a vapor deposition source to adhere to the vapor deposition target through openings after the close contact step, and forming the vapor deposition pattern in the vapor deposition target.
    Type: Grant
    Filed: April 15, 2016
    Date of Patent: March 16, 2021
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Toshihiko Takeda, Yoshinori Hirobe, Yoshiko Miyadera, Katsunari Obata, Naoto Yamada
  • Publication number: 20210069739
    Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.
    Type: Application
    Filed: November 18, 2020
    Publication date: March 11, 2021
    Applicant: Dai Nippon Printing Co., Ltd.
    Inventors: Yoshinori HIROBE, Yutaka MATSUMOTO, Masato USHIKUSA, Toshihiko TAKEDA, Hiroyuki NISHIMURA, Katsunari OBATA, Takashi TAKEKOSHI
  • Publication number: 20210066601
    Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A vapor deposition mask is produced by the steps of preparing a metal plate with a resin layer in which a resin layer is provided on one surface of a metal plate, forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer, and thereafter, forming a resin mask by forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin layer by emitting a laser from the metal mask side.
    Type: Application
    Filed: November 16, 2020
    Publication date: March 4, 2021
    Applicant: Dai Nippon Printing Co., Ltd.
    Inventors: Toshihiko TAKEDA, Hiroyuki NISHIMURA, Katsunari OBATA
  • Publication number: 20210020840
    Abstract: A vapor deposition mask includes a metal mask and a resin mask having an opening. An inner wall surface for composing the opening has an inflection point in a thicknesswise cross section of the resin mask. When an intersection of a first surface, not facing the metal mask, of the resin mask and the inner wall surface is set to be a first intersection, an intersection of a second surface, facing the metal mask, of the resin mask and the inner wall surface is set to be a second intersection, and there is set a first inflection point first positioned from the first intersection toward the second intersection, an angle formed by a line connecting the first intersection and the first inflection point and the first surface is larger than an angle formed by a line connecting the first inflection point and the second intersection and the second surface.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 21, 2021
    Applicant: Dai Nippon Printing Co., Ltd.
    Inventors: Toshihiko TAKEDA, Katsunari OBATA, Hiroshi KAWASAKI
  • Patent number: 10894267
    Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: January 19, 2021
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Yoshinori Hirobe, Yutaka Matsumoto, Masato Ushikusa, Toshihiko Takeda, Hiroyuki Nishimura, Katsunari Obata, Takashi Takekoshi
  • Publication number: 20200404802
    Abstract: A liquid flow path portion of a vapor chamber according to the present invention includes a plurality of main flow grooves which each extend in the first direction and through which working fluid in liquid form passes. A convex array which includes a plurality of liquid flow path convex portions arranged in the first direction via a communicating groove, is provided between a pair of the main flow grooves adjacent to each other. Each of the communicating grooves allows communication between the corresponding pair of the main flow grooves. The width of the communicating groove is larger than the width of the main flow groove.
    Type: Application
    Filed: September 28, 2018
    Publication date: December 24, 2020
    Applicant: DAI NIPPON PRINTING CO., LTD.
    Inventors: Shinichiro TAKAHASHI, Takayuki OTA, Kiyotaka TAKEMATSU, Kenro HIRATA, Taizo HASHIMOTO, Yoko NAKAMURA, Kazunori ODA, Toshihiko TAKEDA, Terutoshi MOMOSE
  • Patent number: 10873029
    Abstract: A vapor deposition mask preparation body in which a metal mask is provided on one surface of a resin plate for obtaining a resin mask, and a protective sheet with peel strength not less than about 0.0004 N/10 mm and less than about 0.2 N/10 mm in conformity with JIS Z-0237:2009 is provided on the other surface of the resin plate is prepared, with respect to the vapor deposition mask preparation body, the resin plate is irradiated with laser light from the metal mask side to form a resin mask opening corresponding to a pattern to be produced by vapor deposition in the resin plate, and the protective sheet is peeled off from the resin mask in which the resin mask opening corresponding to the pattern to be produced by vapor deposition is formed.
    Type: Grant
    Filed: April 7, 2020
    Date of Patent: December 22, 2020
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Toshihiko Takeda, Kumiko Hokari, Yasuko Sone, Katsunari Obata
  • Publication number: 20200395545
    Abstract: A method for producing a multiple-surface imposition vapor deposition mask that enhances definition and reduces weight even when a size is increased. Each of multiple masks in an open space in a frame is configured by a metal mask having a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows. In formation of the plurality of masks, after each of the metal masks and a resin film material for producing the resin mask are attached to the frame, the resin film material is processed, and the openings corresponding to the pattern to be produced by vapor deposition are formed in a plurality of rows lengthwise and crosswise, whereby the multiple-surface imposition vapor deposition mask of the above described configuration is produced.
    Type: Application
    Filed: August 28, 2020
    Publication date: December 17, 2020
    Applicant: Dai Nippon Printing Co., Ltd.
    Inventors: Yoshinori HIROBE, Yutaka MATSUMOTO, Masato USHIKUSA, Toshihiko TAKEDA, Katsunari OBATA, Hiroyuki NISHIMURA
  • Patent number: 10825989
    Abstract: A vapor deposition mask includes a metal mask and a resin mask having an opening. An inner wall surface for composing the opening has an inflection point in a thicknesswise cross section of the resin mask. When an intersection of a first surface, not facing the metal mask, of the resin mask and the inner wall surface is set to be a first intersection, an intersection of a second surface, facing the metal mask, of the resin mask and the inner wall surface is set to be a second intersection, and there is set a first inflection point first positioned from the first intersection toward the second intersection, an angle formed by a line connecting the first intersection and the first inflection point and the first surface is larger than an angle formed by a line connecting the first inflection point and the second intersection and the second surface.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: November 3, 2020
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Toshihiko Takeda, Katsunari Obata, Hiroshi Kawasaki