Patents by Inventor Toshihiro Doi

Toshihiro Doi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10411183
    Abstract: A composition for forming a PZT-based piezoelectric film formed of Mn-doped composite metal oxides is provided, the composition including: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone, in which when a metal atom ratio in the composition is shown as Pb:Mn:Zr:Ti, the PZT-based precursors are contained so that a metal atom ratio of Pb is satisfied to be from 1.00 to 1.20, a metal atom ratio of Mn is satisfied to be equal to or greater than 0.002 and less than 0.05, a metal atom ratio of Zr is satisfied to be from 0.40 to 0.55, a metal atom ratio of Ti is satisfied to be from 0.45 to 0.60, and the total of Zr and Ti in a metal atom ratio is 1.
    Type: Grant
    Filed: March 27, 2015
    Date of Patent: September 10, 2019
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
  • Publication number: 20190049119
    Abstract: Provided is an oven having an improved structure for keeping a cooking chamber clean. The oven includes a main body, a cooking chamber provided inside the main body, a main heater disposed inside the cooking chamber, a fan disposed inside the cooking chamber to circulate air heated by the main heater, a coating film formed on at least a part of a cooking chamber inner wall and having a liquid repellency, and a contaminant collecting portion having a liquid repellency smaller than that of the coating film and provided on the cooking chamber inner wall with which air circulated by the fan collides.
    Type: Application
    Filed: February 10, 2017
    Publication date: February 14, 2019
    Inventors: Kiyoshi IWAMOTO, Yasushi URAI, Shigeki HAYASHI, Seiji SATO, Toshihiro DOI, Kazutoshi TAKENOSHITA, Yurika KIDA
  • Patent number: 10112872
    Abstract: A composition used for forming a PZT-based piezoelectric film formed of Mn and Nb co-doped composite metal oxides is provided, in which the composition includes PZT-based precursors so that a metal atom ratio (Pb:Mn:Nb:Zr:Ti) in the composition satisfies (1.00 to 1.25):(0.002 to 0.056):(0.002 to 0.056):(0.40 to 0.60):(0.40 to 0.60), a rate of Mn is from 0.20 to 0.80 when the total of metal atom rates of Mn and Nb is 1, a rate of Zr is from 0.40 to 0.60 when the total of metal atom rates of Zr and Ti is 1, and the total rate of Zr and Ti is from 0.9300 to 0.9902 when the total of metal atom rates of Mn, Nb, Zr, and Ti is 1.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: October 30, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
  • Patent number: 10005101
    Abstract: A method includes: coating a composition for forming a PZT ferroelectric film not containing Nb on a lower electrode 11 formed on a substrate 10, prebaking the composition, and baking the composition to be crystallized and to thereby form a crystallization promoting layer 12 having a thickness 45 to 90 nm thereon; coating a composition for forming a PNbZT-based ferroelectric film, containing 4 to 10 at % of Nb in 100 at % of all the perovskite B site atoms (Zr, Ti) contained in the composition, on the formed crystallization promoting layer 12 to form a coating film 13a of PNbZT thereon; and pre-baking the coating film 13a and then baking the coating film 13a to be crystallized and to thereby form a PNbZT ferroelectric thin film on the lower electrode 11.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: June 26, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
  • Patent number: 9950959
    Abstract: A composition used for forming a PZT-based piezoelectric film formed of Mn and Nb co-doped composite metal oxides is provided, in which the composition includes PZT-based precursors so that a metal atom ratio (Pb:Mn:Nb:Zr:Ti) in the composition satisfies (1.00 to 1.25):(0.002 to 0.056):(0.002 to 0.056):(0.40 to 0.60):(0.40 to 0.60), a rate of Mn is from 0.20 to 0.80 when the total of metal atom rates of Mn and Nb is 1, a rate of Zr is from 0.40 to 0.60 when the total of metal atom rates of Zr and Ti is 1, and the total rate of Zr and Ti is from 0.9300 to 0.9902 when the total of metal atom rates of Mn, Nb, Zr, and Ti is 1.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: April 24, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
  • Patent number: 9905417
    Abstract: A composition containing a precursor of a ferroelectric thin film, a solvent, and a reaction control substance, can form a ferroelectric thin film by temporary firing and permanent firing of a coating film. The composition contains the reaction control substance in such an amount that a Young's modulus of a film formed in a step of temporary firing at a temperature of 200° C. to 300° C. becomes equal to or less than 42 GPa, and a Young's modulus of a film formed in a step of permanent firing at a temperature of 400° C. to 500° C. becomes equal to or greater than 55 GPa. Thus a thin film having high crystallinity can be formed which substantially does not crack at the time of permanent firing even if the thickness of the coating film formed per single coating operation is increased.
    Type: Grant
    Filed: May 14, 2014
    Date of Patent: February 27, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
  • Publication number: 20180033950
    Abstract: A piezoelectric PTZT film is formed of a metal oxide having a perovskite structure including Pb, Ta, Zr, and Ti, in which the metal oxide further includes carbon, and a content of the carbon is 80 to 800 ppm by mass. In a process for producing a liquid composition for forming a piezoelectric film, a Ta alkoxide, a Zr alkoxide, ?-diketones, and a diol are refluxed, a Ti alkoxide is added into a first synthesis solution obtained by the refluxing, and then refluxing is performed again, a Pb compound is added into a second synthesis solution obtained by performing the additional refluxing, and then refluxing is performed again, a solvent is removed from a third synthesis solution obtained by performing the additional refluxing, and then, dilution with alcohol is performed, to produce the liquid composition for forming a piezoelectric PTZT film.
    Type: Application
    Filed: February 15, 2016
    Publication date: February 1, 2018
    Inventors: Toshihiro Doi, Nobuyuki Soyama
  • Patent number: 9799821
    Abstract: A residual stress in a PZT type ferroelectric film 12 formed on a substrate body 11 by a sol-gel process is ?14 MPa to ?31 MPa, and the ferroelectric film 12 is crystal oriented in a (100) plane.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: October 24, 2017
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
  • Patent number: 9774762
    Abstract: An image processing apparatus includes a receiving unit, a generating unit, and a determining unit. The receiving unit receives first image data. The first image data includes a first part corresponding to a manuscript and a second part corresponding to a non-manuscript. The generating unit generates second image data by processing the second part. The determining unit determines whether the manuscript is processed as a monochromatic image or a color image, based on the second image data. The determining unit outputs a result of the determination.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: September 26, 2017
    Assignee: OKI DATA CORPORATION
    Inventor: Toshihiro Doi
  • Publication number: 20170222127
    Abstract: A composition for forming a PZT-based piezoelectric film formed of Mn-doped composite metal oxides is provided, the composition including: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone, in which when a metal atom ratio in the composition is shown as Pb:Mn:Zr:Ti, the PZT-based precursors are contained so that a metal atom ratio of Pb is satisfied to be from 1.00 to 1.20, a metal atom ratio of Mn is satisfied to be equal to or greater than 0.002 and less than 0.05, a metal atom ratio of Zr is satisfied to be from 0.40 to 0.55, a metal atom ratio of Ti is satisfied to be from 0.45 to 0.60, and the total of Zr and Ti in a metal atom ratio is 1.
    Type: Application
    Filed: March 27, 2015
    Publication date: August 3, 2017
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
  • Patent number: 9666331
    Abstract: This ferroelectric thin film-forming sol-gel solution contains: a PZT-based compound; a high-molecular compound used to adjust the viscosity containing polyvinyl pyrrolidone; and an organic dopant containing N-methyl pyrrolidone, in which the amount of the PZT-based compound is greater than or equal to 17 mass % in terms of oxides, the molar ratio (PZT-based compound:polyvinyl pyrrolidone) of the polyvinyl pyrrolidone to the PZT-based compound is 1:0.1 to 1:0.5 in terms of monomers, and the amount of the organic dopant containing N-methyl pyrrolidone in the sol-gel solution is 3 mass % to 13 mass %.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: May 30, 2017
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
  • Publication number: 20170129815
    Abstract: A composition used for forming a PZT-based piezoelectric film formed of Mn and Nb co-doped composite metal oxides is provided, in which the composition includes PZT-based precursors so that a metal atom ratio (Pb:Mn:Nb:Zr:Ti) in the composition satisfies (1.00 to 1.25):(0.002 to 0.056):(0.002 to 0.056):(0.40 to 0.60):(0.40 to 0.60), a rate of Mn is from 0.20 to 0.80 when the total of metal atom rates of Mn and Nb is 1, a rate of Zr is from 0.40 to 0.60 when the total of metal atom rates of Zr and Ti is 1, and the total rate of Zr and Ti is from 0.9300 to 0.9902 when the total of metal atom rates of Mn, Nb, Zr, and Ti is 1.
    Type: Application
    Filed: March 12, 2015
    Publication date: May 11, 2017
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
  • Publication number: 20170107156
    Abstract: A Ce-doped PZT-based piezoelectric film is provided which is formed of Ce-doped composite metal oxides represented by a general formula: PbzCexZryTi1-yO3. x, y, and z in the general formula satisfy a relationship of 0.005?x?0.05, a relationship of 0.40?y?0.55, and a relationship of 0.95?z?1.15, respectively. It is preferable that the hysteresis of the polarization quantity of the Ce-doped PZT-based piezoelectric film be shifted from the center of the hysteresis to a negative side by 4 kV/cm or more.
    Type: Application
    Filed: March 23, 2015
    Publication date: April 20, 2017
    Applicant: Mitsubishi Materials Corporation
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
  • Publication number: 20170110648
    Abstract: A composition for forming a Ce-doped PZT-based piezoelectric film contains: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone. The PZT-based precursors are contained so that a metal atom ratio (Pb:Ce:Zr:Ti) in the composition satisfies (1.00 to 1.28):(0.005 to 0.05):(0.40 to 0.55):(0.60 to 0.45) and the total of Zr and Ti in a metal atom ratio is 1. A concentration of the PZT-based precursor in 100 mass % of the composition is from 17 mass % to 35 mass % in terms of an oxide concentration, a rate of diol in 100 mass % of the composition is from 16 mass % to 56 mass %, and a molar ratio of polyvinylpyrrolidone to 1 mole of the PZT-based precursor is 0.01 moles to 0.25 moles in terms of monomers.
    Type: Application
    Filed: March 20, 2015
    Publication date: April 20, 2017
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
  • Publication number: 20170001912
    Abstract: A Mn and Nb co-doped PZT-based piezoelectric film formed of Mn and Nb co-doped composite metal oxides is provided, in which a metal atom ratio (Pb:Mn:Nb:Zr:Ti) in the film satisfies (0.98 to 1.12):(0.002 to 0.056):(0.002 to 0.056):(0.40 to 0.60):(0.40 to 0.60), a rate of Mn is from 0.20 to 0.80 when the total of metal atom rates of Mn and Nb is 1, a rate of Zr is from 0.40 to 0.60 when the total of metal atom rates of Zr and Ti is 1, and the total rate of Zr and Ti is from 0.9300 to 0.9902 when the total of metal atom rates of Mn, Nb, Zr, and Ti is 1.
    Type: Application
    Filed: March 12, 2015
    Publication date: January 5, 2017
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
  • Publication number: 20160330348
    Abstract: An image processing apparatus includes a receiving unit, a generating unit, and a determining unit. The receiving unit receives first image data. The first image data includes a first part corresponding to a manuscript and a second part corresponding to a non-manuscript. The generating unit generates second image data by processing the second part. The determining unit determines whether the manuscript is processed as a monochromatic image or a color image, based on the second image data. The determining unit outputs a result of the determination.
    Type: Application
    Filed: March 18, 2016
    Publication date: November 10, 2016
    Applicant: Oki Data Corporation
    Inventor: Toshihiro DOI
  • Patent number: 9424664
    Abstract: An image processing apparatus that generates contour information of an image object included in input image data and compresses image data using the contour information includes a smoothing processing part that performs a smoothing process on the input image data; a contour extraction part that extracts the contour information of the image object included in the image data on which the smoothing process is performed; and a contour correction part that corrects the contour information extracted by the contour extraction part.
    Type: Grant
    Filed: October 28, 2014
    Date of Patent: August 23, 2016
    Assignee: Oki Data Corporation
    Inventor: Toshihiro Doi
  • Patent number: 9398193
    Abstract: An image processing apparatus includes an attribute image generation part that analyzes image data of an original image and generates image data of an attribute image for each pixel, the attribute image having a first attribute value, a compression image generation part that generates image data of a first compression image that includes a compression image of the first part image and image data of a second compression image, and a format part that generates, based on the image data of the attribute image, image data that shows the first attribute value for each pixel as selection data being used to select a pixel value of each pixel, and generates data in a multilayer data format that includes the selection data, the image data of the first compression image and the image data of the second compression image.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: July 19, 2016
    Assignee: Oki Data Corporation
    Inventors: Tetsuaki Kuwano, Norihide Miyamura, Toshihiro Doi
  • Publication number: 20160181507
    Abstract: The method for manufacturing a PNbZT thin film of the present invention includes: a process of preparing a plurality of types of sol-gel solutions having different concentration ratio of zirconium and titanium (Zr/Ti) while satisfying the composition formula PbzNbxZryTi1-yO3 (0<x?0.05, 0.40?y?0.60, and 1.05?z?1.25); a process of laminating at least two layers of calcined films, in which the concentration ratio Zr/Ti are decreased in a stepwise manner, on a substrate by selecting a predetermined sol-gel solution from among the plurality of types of sol-gel solutions so as to allow the concentration ratio Zr/Ti to be decreased in a stepwise manner, and repeating the application of the sol-gel solutions onto the substrate and calcining the resultant at least two times; and a process of obtaining a single PNbZT thin film by simultaneously baking a plurality of the calcined films.
    Type: Application
    Filed: August 27, 2014
    Publication date: June 23, 2016
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama
  • Publication number: 20160111277
    Abstract: A composition containing a precursor of a ferroelectric thin film, a solvent, and a reaction control substance, can form a ferroelectric thin film by temporary firing and permanent firing of a coating film. The composition contains the reaction control substance in such an amount that a Young's modulus of a film formed in a step of temporary firing at a temperature of 200° C. to 300° C. becomes equal to or less than 42 GPa, and a Young's modulus of a film formed in a step of permanent firing at a temperature of 400° C. to 500° C. becomes equal to or greater than 55 GPa. Thus a thin film having high crystallinity can be formed which substantially does not crack at the time of permanent firing even if the thickness of the coating film formed per single coating operation is increased.
    Type: Application
    Filed: May 14, 2014
    Publication date: April 21, 2016
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Toshihiro Doi, Hideaki Sakurai, Nobuyuki Soyama