Abstract: Provided are a dielectric ceramic composition having excellent temperature properties and low DC bias dependence in a wide temperature range from room temperature to over 200° C., a method of manufacturing a dielectric ceramic composition, and a multilayer ceramic capacitor.

Abstract: This transistor sensor includes a substrate, a channel layer provided over one surface of the substrate, and a solid electrolyte layer provided between the substrate and the channel layer or over a surface of the channel layer on an opposite side to the substrate side, in which the channel layer includes an inorganic semiconductor, the solid electrolyte layer includes an inorganic solid electrolyte, and at least a portion of either one or both of the channel layer and the solid electrolyte layer includes an exposed portion exposed to outside.

Abstract: A dielectric material which satisfies X9M characteristics and ensures operations over an extended period of time at 200° C. is provided.

Abstract: A dielectric material which satisfies X9M characteristics and ensures operations over an extended period of time at 200° C. is provided.

Abstract: A dielectric material which satisfies X9M characteristics and ensures operations over an extended period of time at 200° C. is provided.

Abstract: This method for manufacturing a piezoelectric film includes: a coating step of obtaining a coated film by coating a coating solution on a substrate, wherein the coating solution includes at least lead, zirconium, and titanium, a content ratio of the zirconium and the titanium is in a range of 54:46 to 40:60 in terms of molar ratio, and a perovskite crystal phase is generated by heating the coating solution at a temperature equal to or higher than a crystallization initiation temperature; a drying step of obtaining a dried film by drying the coated film; a first calcining step of obtaining a first calcined film; a second calcining step of obtaining a second calcined film; and a main firing step of obtaining a piezoelectric film by heating the second calcined film at a main firing temperature.

Abstract: This liquid composition for forming a KNN film includes an organic metal compound including an organic potassium compound, an organic sodium compound, and an organic niobium compound, and a solvent. In this liquid composition for forming a KNN film, the organic potassium compound and the sodium compound are each metal salts of a carboxylic acid represented by General Formula CnH2n+1COOH (here, 4?n?8), the organic niobium compound is a niobium alkoxide or a metal salt of a carboxylic acid represented by General Formula CnH2n+1COOH (here, 4?n?8), and a main solvent is a carboxylic acid represented by General Formula CnH2n+1COOH (here, 4?n?8) and is included in an amount of 50% by mass to 90% by mass with respect to 100% by mass of the liquid composition for forming a KNN film.

Abstract: A dielectric material which satisfies X9M characteristics and ensures operations over an extended period of time at 200° C. is provided.

Abstract: A liquid composition for forming a piezoelectric film formed of a metal oxide including at least Bi, Na, and Ti. A raw material of the Na is a sodium alkoxide, a raw material of the Ti is a titanium alkoxide, a diol and an amine-based stabilizer are included, and a molar ratio of the amine-based stabilizer with respect to the titanium alkoxide (titanium alkoxide:amine-based stabilizer) is 1:0.5 to 1:4. It is preferable that the metal oxide is included as 4% by mass to 20% by mass with respect to 100% by mass of the liquid composition.

Abstract: A piezoelectric PTZT film is formed of a metal oxide having a perovskite structure including Pb, Ta, Zr, and Ti, in which the metal oxide further includes carbon, and a content of the carbon is 80 to 800 ppm by mass. In a process for producing a liquid composition for forming a piezoelectric film, a Ta alkoxide, a Zr alkoxide, ?-diketones, and a diol are refluxed, a Ti alkoxide is added into a first synthesis solution obtained by the refluxing, and then refluxing is performed again, a Pb compound is added into a second synthesis solution obtained by performing the additional refluxing, and then refluxing is performed again, a solvent is removed from a third synthesis solution obtained by performing the additional refluxing, and then, dilution with alcohol is performed, to produce the liquid composition for forming a piezoelectric PTZT film.

Abstract: Provided is an oven having an improved structure for keeping a cooking chamber clean. The oven includes a main body, a cooking chamber provided inside the main body, a main heater disposed inside the cooking chamber, a fan disposed inside the cooking chamber to circulate air heated by the main heater, a coating film formed on at least a part of a cooking chamber inner wall and having a liquid repellency, and a contaminant collecting portion having a liquid repellency smaller than that of the coating film and provided on the cooking chamber inner wall with which air circulated by the fan collides.

Abstract: A composition for forming a Ce-doped PZT-based piezoelectric film contains: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone. The PZT-based precursors are contained so that a metal atom ratio (Pb:Ce:Zr:Ti) in the composition satisfies (1.00 to 1.28):(0.005 to 0.05):(0.40 to 0.55):(0.60 to 0.45) and the total of Zr and Ti in a metal atom ratio is 1. A concentration of the PZT-based precursor in 100 mass % of the composition is from 17 mass % to 35 mass % in terms of an oxide concentration, a rate of diol in 100 mass % of the composition is from 16 mass % to 56 mass %, and a molar ratio of polyvinylpyrrolidone to 1 mole of the PZT-based precursor is 0.01 moles to 0.25 moles in terms of monomers.

Abstract: A composition for forming a PZT-based piezoelectric film formed of Mn-doped composite metal oxides is provided, the composition including: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone, in which when a metal atom ratio in the composition is shown as Pb:Mn:Zr:Ti, the PZT-based precursors are contained so that a metal atom ratio of Pb is satisfied to be from 1.00 to 1.20, a metal atom ratio of Mn is satisfied to be equal to or greater than 0.002 and less than 0.05, a metal atom ratio of Zr is satisfied to be from 0.40 to 0.55, a metal atom ratio of Ti is satisfied to be from 0.45 to 0.60, and the total of Zr and Ti in a metal atom ratio is 1.

Abstract: Provided is an oven having an improved structure for keeping a cooking chamber clean. The oven includes a main body, a cooking chamber provided inside the main body, a main heater disposed inside the cooking chamber, a fan disposed inside the cooking chamber to circulate air heated by the main heater, a coating film formed on at least a part of a cooking chamber inner wall and having a liquid repellency, and a contaminant collecting portion having a liquid repellency smaller than that of the coating film and provided on the cooking chamber inner wall with which air circulated by the fan collides.

Abstract: A composition used for forming a PZT-based piezoelectric film formed of Mn and Nb co-doped composite metal oxides is provided, in which the composition includes PZT-based precursors so that a metal atom ratio (Pb:Mn:Nb:Zr:Ti) in the composition satisfies (1.00 to 1.25):(0.002 to 0.056):(0.002 to 0.056):(0.40 to 0.60):(0.40 to 0.60), a rate of Mn is from 0.20 to 0.80 when the total of metal atom rates of Mn and Nb is 1, a rate of Zr is from 0.40 to 0.60 when the total of metal atom rates of Zr and Ti is 1, and the total rate of Zr and Ti is from 0.9300 to 0.9902 when the total of metal atom rates of Mn, Nb, Zr, and Ti is 1.

Abstract: A method includes: coating a composition for forming a PZT ferroelectric film not containing Nb on a lower electrode 11 formed on a substrate 10, prebaking the composition, and baking the composition to be crystallized and to thereby form a crystallization promoting layer 12 having a thickness 45 to 90 nm thereon; coating a composition for forming a PNbZT-based ferroelectric film, containing 4 to 10 at % of Nb in 100 at % of all the perovskite B site atoms (Zr, Ti) contained in the composition, on the formed crystallization promoting layer 12 to form a coating film 13a of PNbZT thereon; and pre-baking the coating film 13a and then baking the coating film 13a to be crystallized and to thereby form a PNbZT ferroelectric thin film on the lower electrode 11.

Abstract: A composition used for forming a PZT-based piezoelectric film formed of Mn and Nb co-doped composite metal oxides is provided, in which the composition includes PZT-based precursors so that a metal atom ratio (Pb:Mn:Nb:Zr:Ti) in the composition satisfies (1.00 to 1.25):(0.002 to 0.056):(0.002 to 0.056):(0.40 to 0.60):(0.40 to 0.60), a rate of Mn is from 0.20 to 0.80 when the total of metal atom rates of Mn and Nb is 1, a rate of Zr is from 0.40 to 0.60 when the total of metal atom rates of Zr and Ti is 1, and the total rate of Zr and Ti is from 0.9300 to 0.9902 when the total of metal atom rates of Mn, Nb, Zr, and Ti is 1.

Abstract: A composition containing a precursor of a ferroelectric thin film, a solvent, and a reaction control substance, can form a ferroelectric thin film by temporary firing and permanent firing of a coating film. The composition contains the reaction control substance in such an amount that a Young's modulus of a film formed in a step of temporary firing at a temperature of 200° C. to 300° C. becomes equal to or less than 42 GPa, and a Young's modulus of a film formed in a step of permanent firing at a temperature of 400° C. to 500° C. becomes equal to or greater than 55 GPa. Thus a thin film having high crystallinity can be formed which substantially does not crack at the time of permanent firing even if the thickness of the coating film formed per single coating operation is increased.

Abstract: A piezoelectric PTZT film is formed of a metal oxide having a perovskite structure including Pb, Ta, Zr, and Ti, in which the metal oxide further includes carbon, and a content of the carbon is 80 to 800 ppm by mass. In a process for producing a liquid composition for forming a piezoelectric film, a Ta alkoxide, a Zr alkoxide, ?-diketones, and a diol are refluxed, a Ti alkoxide is added into a first synthesis solution obtained by the refluxing, and then refluxing is performed again, a Pb compound is added into a second synthesis solution obtained by performing the additional refluxing, and then refluxing is performed again, a solvent is removed from a third synthesis solution obtained by performing the additional refluxing, and then, dilution with alcohol is performed, to produce the liquid composition for forming a piezoelectric PTZT film.

Abstract: A residual stress in a PZT type ferroelectric film 12 formed on a substrate body 11 by a sol-gel process is ?14 MPa to ?31 MPa, and the ferroelectric film 12 is crystal oriented in a (100) plane.