Abstract: An image processing apparatus includes a receiving unit, a generating unit, and a determining unit. The receiving unit receives first image data. The first image data includes a first part corresponding to a manuscript and a second part corresponding to a non-manuscript. The generating unit generates second image data by processing the second part. The determining unit determines whether the manuscript is processed as a monochromatic image or a color image, based on the second image data. The determining unit outputs a result of the determination.

Abstract: A composition for forming a PZT-based piezoelectric film formed of Mn-doped composite metal oxides is provided, the composition including: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone, in which when a metal atom ratio in the composition is shown as Pb:Mn:Zr:Ti, the PZT-based precursors are contained so that a metal atom ratio of Pb is satisfied to be from 1.00 to 1.20, a metal atom ratio of Mn is satisfied to be equal to or greater than 0.002 and less than 0.05, a metal atom ratio of Zr is satisfied to be from 0.40 to 0.55, a metal atom ratio of Ti is satisfied to be from 0.45 to 0.60, and the total of Zr and Ti in a metal atom ratio is 1.

Abstract: This ferroelectric thin film-forming sol-gel solution contains: a PZT-based compound; a high-molecular compound used to adjust the viscosity containing polyvinyl pyrrolidone; and an organic dopant containing N-methyl pyrrolidone, in which the amount of the PZT-based compound is greater than or equal to 17 mass % in terms of oxides, the molar ratio (PZT-based compound:polyvinyl pyrrolidone) of the polyvinyl pyrrolidone to the PZT-based compound is 1:0.1 to 1:0.5 in terms of monomers, and the amount of the organic dopant containing N-methyl pyrrolidone in the sol-gel solution is 3 mass % to 13 mass %.

Abstract: A composition used for forming a PZT-based piezoelectric film formed of Mn and Nb co-doped composite metal oxides is provided, in which the composition includes PZT-based precursors so that a metal atom ratio (Pb:Mn:Nb:Zr:Ti) in the composition satisfies (1.00 to 1.25):(0.002 to 0.056):(0.002 to 0.056):(0.40 to 0.60):(0.40 to 0.60), a rate of Mn is from 0.20 to 0.80 when the total of metal atom rates of Mn and Nb is 1, a rate of Zr is from 0.40 to 0.60 when the total of metal atom rates of Zr and Ti is 1, and the total rate of Zr and Ti is from 0.9300 to 0.9902 when the total of metal atom rates of Mn, Nb, Zr, and Ti is 1.

Abstract: A composition for forming a Ce-doped PZT-based piezoelectric film contains: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone. The PZT-based precursors are contained so that a metal atom ratio (Pb:Ce:Zr:Ti) in the composition satisfies (1.00 to 1.28):(0.005 to 0.05):(0.40 to 0.55):(0.60 to 0.45) and the total of Zr and Ti in a metal atom ratio is 1. A concentration of the PZT-based precursor in 100 mass % of the composition is from 17 mass % to 35 mass % in terms of an oxide concentration, a rate of diol in 100 mass % of the composition is from 16 mass % to 56 mass %, and a molar ratio of polyvinylpyrrolidone to 1 mole of the PZT-based precursor is 0.01 moles to 0.25 moles in terms of monomers.

Abstract: A Ce-doped PZT-based piezoelectric film is provided which is formed of Ce-doped composite metal oxides represented by a general formula: PbzCexZryTi1-yO3. x, y, and z in the general formula satisfy a relationship of 0.005?x?0.05, a relationship of 0.40?y?0.55, and a relationship of 0.95?z?1.15, respectively. It is preferable that the hysteresis of the polarization quantity of the Ce-doped PZT-based piezoelectric film be shifted from the center of the hysteresis to a negative side by 4 kV/cm or more.

Abstract: A Mn and Nb co-doped PZT-based piezoelectric film formed of Mn and Nb co-doped composite metal oxides is provided, in which a metal atom ratio (Pb:Mn:Nb:Zr:Ti) in the film satisfies (0.98 to 1.12):(0.002 to 0.056):(0.002 to 0.056):(0.40 to 0.60):(0.40 to 0.60), a rate of Mn is from 0.20 to 0.80 when the total of metal atom rates of Mn and Nb is 1, a rate of Zr is from 0.40 to 0.60 when the total of metal atom rates of Zr and Ti is 1, and the total rate of Zr and Ti is from 0.9300 to 0.9902 when the total of metal atom rates of Mn, Nb, Zr, and Ti is 1.

Abstract: An image processing apparatus includes a receiving unit, a generating unit, and a determining unit. The receiving unit receives first image data. The first image data includes a first part corresponding to a manuscript and a second part corresponding to a non-manuscript. The generating unit generates second image data by processing the second part. The determining unit determines whether the manuscript is processed as a monochromatic image or a color image, based on the second image data. The determining unit outputs a result of the determination.

Abstract: An image processing apparatus that generates contour information of an image object included in input image data and compresses image data using the contour information includes a smoothing processing part that performs a smoothing process on the input image data; a contour extraction part that extracts the contour information of the image object included in the image data on which the smoothing process is performed; and a contour correction part that corrects the contour information extracted by the contour extraction part.

Abstract: An image processing apparatus includes an attribute image generation part that analyzes image data of an original image and generates image data of an attribute image for each pixel, the attribute image having a first attribute value, a compression image generation part that generates image data of a first compression image that includes a compression image of the first part image and image data of a second compression image, and a format part that generates, based on the image data of the attribute image, image data that shows the first attribute value for each pixel as selection data being used to select a pixel value of each pixel, and generates data in a multilayer data format that includes the selection data, the image data of the first compression image and the image data of the second compression image.

Abstract: The method for manufacturing a PNbZT thin film of the present invention includes: a process of preparing a plurality of types of sol-gel solutions having different concentration ratio of zirconium and titanium (Zr/Ti) while satisfying the composition formula PbzNbxZryTi1-yO3 (0<x?0.05, 0.40?y?0.60, and 1.05?z?1.25); a process of laminating at least two layers of calcined films, in which the concentration ratio Zr/Ti are decreased in a stepwise manner, on a substrate by selecting a predetermined sol-gel solution from among the plurality of types of sol-gel solutions so as to allow the concentration ratio Zr/Ti to be decreased in a stepwise manner, and repeating the application of the sol-gel solutions onto the substrate and calcining the resultant at least two times; and a process of obtaining a single PNbZT thin film by simultaneously baking a plurality of the calcined films.

Abstract: A composition containing a precursor of a ferroelectric thin film, a solvent, and a reaction control substance, can form a ferroelectric thin film by temporary firing and permanent firing of a coating film. The composition contains the reaction control substance in such an amount that a Young's modulus of a film formed in a step of temporary firing at a temperature of 200° C. to 300° C. becomes equal to or less than 42 GPa, and a Young's modulus of a film formed in a step of permanent firing at a temperature of 400° C. to 500° C. becomes equal to or greater than 55 GPa. Thus a thin film having high crystallinity can be formed which substantially does not crack at the time of permanent firing even if the thickness of the coating film formed per single coating operation is increased.

Abstract: A residual stress in a PZT type ferroelectric film 12 formed on a substrate body 11 by a sol-gel process is ?14 MPa to ?31 MPa, and the ferroelectric film 12 is crystal oriented in a (100) plane.

Abstract: Provided is an image interpolating unit including: a first interpolation pixel generator that generates a first pixel value; a second interpolation pixel generator that detects, based on a total of differences between pixel values in a pixel group centered around a lost pixel and pixel values in pixel groups centered around a single pixel around the lost pixel, reference pixels of the lost pixel, and generate, based on the reference pixels, a second pixel value on the lost pixel; a reference pixel edge amount calculator; and an interpolator that inserts, as an interpolation pixel value, one of the first and the second pixel values into a position corresponding to the lost pixel, based on edge amounts of the reference pixels and a total of differences between pixel values in a pixel group centered around the reference pixels and the pixel values in the pixel group centered around the lost pixel.

Abstract: A PZT-based ferroelectric thin film is formed by coating a PZT-based ferroelectric thin film-forming composition on a lower electrode of a substrate one or two or more times, pre-baking the composition, and baking the composition to be crystallized, and this thin film includes PZT-based particles having an average particle size in a range of 500 nm to 3000 nm when measured on a surface of the thin film, in which heterogeneous fine particles having an average particle size of 20 nm or less, which are different from the PZT-based particles, are precipitated on a part or all of the grain boundaries on the surface of the thin film.

Abstract: To provide a ferrite thin film-forming composition material that is a composition material for forming a ferrite thin film by using the sol-gel method which can form a thin ferrite thin film having a uniform thickness and, furthermore, has excellent long-term storage stability, a method of forming a ferrite thin film using the above composition material, and a ferrite thin film formed by using the above method. A ferrite thin film-forming composition material is a composition material for forming a NiZn ferrite, CuZn ferrite, or NiCuZn ferrite thin film by using a sol-gel method, in which the composition material is formed by dissolving metallic raw materials in a solvent including acetonitrile, and the fraction of acetonitrile is 30 mass % to 60 mass % with respect to 100 mass % of the composition material.

Abstract: A method of preparing a ferroelectric thin film-forming composition, specifically, a method of preparing a PZT thin film-forming composition includes: a step of allowing composition precursor raw materials, which contain PZT precursor substances at a concentration of 23 to 38 mass % in terms of oxides in 100 mass % of the composition precursor raw materials, and a high-molecular compound to react with each other to obtain a PZT thin film-forming composition precursor; and a step of aging the PZT thin film-forming composition precursor at a temperature of 0 to 10° C. for at least 30 days.

Abstract: A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of a orientation controlling layer b coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer in the (100) plane.

Abstract: An image processing apparatus includes an attribute image generation part that analyses image data of an original image and generates image data of an attribute image for each pixel, the attribute image having a first attribute value, a compression image generation part that generates image data of a first compression image that includes a compression image of the first part image and image data of a second compression image, and a format part that generates, based on the image data of the attribute image, image data that shows the first attribute value for each pixel as selection data being used to select a pixel value of each pixel, and generates data in a multilayer data format that includes the selection data, the image data of the first compression image and the image data of the second compression image.

Abstract: When a ferroelectric thin film-forming sol-gel solution contains a PZT-based compound, a viscosity-adjusting macromolecular compound including polyvinylpyrrolidone, and an organic dopant including a formamide-based solvent, the PZT-based compound is included at 17 mass % or more in terms of an oxide, the molar ratio of the polyvinylpyrrolidone to the PZT-based compound is PZT-based compound:polyvinylpyrrolidone=1:0.1 to 0.5 in terms of a monomer, and the formamide-based solvent is included at 3 mass % to 13 mass % of the sol-gel solution, it is possible to form a thick layer by coating the sol-gel solution once, the production efficiency improves, and crack-free and dense film formation even after calcination and firing becomes possible.