Abstract: A ceramic electronic device includes an element body and an external electrode. The element body is formed by laminating a ceramic layer and an internal electrode layer. The external electrode is electrically connected to at least one end of the internal, electrode layer. The element body includes a boundary layer at an end of the ceramic layer. The ceramic layer includes a perovskite compound represented by ABO3 as a main component. The boundary layer includes Ba and Ti as a main component. The boundary layer includes 0.27-0.40 parts by mol of Ba, provided that a total of Ba and Ti included in the boundary layer is 1 part by mol.

Abstract: An electronic device includes an element body. The element body includes at least two internal electrode layers and a dielectric layer laminated between the internal electrode layers. Ni oxide particles exist at a boundary between the internal electrode layers and the dielectric layer. The dielectric layer is in contact with the internal electrode layers at first and second boundaries. The dielectric layer includes a first dielectric large particle and a second dielectric large particle. The first dielectric large particle is in contact with at least one of the Ni oxide particles existing at the first boundary and in contact with one of the internal electrode layers at the second boundary. The second dielectric large particle is in contact with at least one of the internal electrode layers at the first boundary and in contact with at least one of the Ni oxide particles existing at the second boundary.

Abstract: An electronic device includes an element body. The element body includes a first internal electrode layer, a second internal electrode layer, and a dielectric layer laminated between the first internal electrode layer and the second internal electrode layer. Ni oxide particles exist at a first boundary between the first internal electrode layer and the dielectric layer. The dielectric layer includes a dielectric large particle in contact with both of the Ni oxide particles at the first boundary and the second internal electrode layer.

Abstract: A dielectric composition including a tungsten bronze type composite oxide as a main component represented by (Ba1-xSrx)aRbZrcTadO30+0.5e in terms of an atomic ratio. In the dielectric composition, c=(2a+3b?10)?e and d=(20?2a?3b)+e are satisfied. R includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc. In the dielectric composition, 0.000?x?0.500, 5.100?a?5.860, 0.000?b?0.100, and ?0.150?e?0.150 are satisfied.

Abstract: An electronic component includes a component body, a metal terminal, and a bonding material. The component body includes an element body and an external electrode. The metal terminal includes a first main surface and a second main surface, and a side surface. The bonding material electrically and physically connects the external electrode and the metal terminal. The metal terminal includes a first metal layer including the first main surface, a second metal layer including the second main surface, and a terminal body including the side surface. The terminal body is exposed at the side surface, and the first metal layer and the second metal layer are separated from each other on the side surface. Each of the first metal layer and the second metal layer includes a Ni plated layer. The terminal body includes Cu. The bonding material includes solder.

Abstract: A ceramic electronic device comprises an element body including a ceramic layer and an internal electrode layer, and an external electrode electrically connected to at least one end of the internal electrode layer. The element body includes an interface part at least at a part of a boundary between the external electrode and the ceramic layer. The interface part includes an oxide containing aluminium and an oxide containing boron.

Abstract: A dielectric composition includes a dielectric grain including a perovskite compound and a first segregation phase including at least Ca, Al, Si, and O.

Abstract: In order to provide a dielectric composition having high density even when fired at a relatively low temperature, the main component of a dielectric composition includes tantalum and at least one of barium or strontium, and the subcomponent of the dielectric composition includes at least one element selected from the group consisting of vanadium, titanium, and aluminum.

Abstract: To provide a multilayer electronic component of which a reliability is not compromised and also a crack is suppressed from forming even when the multilayer electronic component is made thinner. A multilayer electronic component including an element body in which at least one dielectric layer and at least one internal electrode layer are stacked in an alternating manner, wherein a thickness variation of the at least one internal electrode layer is larger than a thickness variation of the at least one dielectric layer.

Abstract: A multilayer ceramic electronic device includes an element body including a ceramic layer and an internal electrode layer, and an external electrode formed on an outer surface of the element body and electrically connected to part of the internal electrode layer. The external electrode includes a first layer in direct contact with the element body and containing a first insulator phase and first metal phases, and a second layer in contact with an outer surface of the first layer and containing a second insulator phase and second metal phases. An area ratio of the first metal phases in the first layer is more than 8% and 30% or less. An area ratio of the second metal phases in the second layer is larger than the area ratio of the first metal phases in the first layer. The first metal phases have an average aspect ratio of 3.5 or more.

Abstract: A dielectric composition includes main phases having a tungsten bronze structure and first segregation phases. The first segregation phases include Ba and Si.

Abstract: A dielectric composition includes main phases having a tungsten bronze structure and grain boundaries existing between the main phases. At least one or more rare earth elements selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, and Dy is RE. A concentration ratio of RE in central portions of the main phases to RE in peripheral portions of the main phases is 0.2 or less.

Abstract: A ceramic electronic device includes an element body and an external electrode. The element body is formed by laminating a ceramic layer and an internal electrode layer. The external electrode is electrically connected to at least one end of the internal electrode layer. At least a part of a joint boundary between the electrode layer and the ceramic layer includes an interface protrusion on the external electrode side. The interface protrusion is made of an oxide.

Abstract: A ceramic electronic device includes an element body and an external electrode. The element body includes a ceramic layer and an internal electrode layer. The external electrode is formed on an end surface of the element body and electrically connected to a part of the internal electrode layer. The ceramic layer includes a perovskite compound represented by ABO3 as a main component. The external electrode includes a baked electrode layer having a first region and a second region. The first region is contacted with the end surface of the element body and located near a joint boundary with the element body. The second region is located outside the first region and constitutes an outer surface of the baked electrode layer. The first region includes a glass frit including at least B, Zn, and Si. The second region includes an oxide having a higher melting point than Cu.

Abstract: A ceramic electronic device includes an element body and an external electrode. The element body includes a ceramic layer and an internal electrode layer. The external electrode is formed on an end surface of the element body and electrically connected to a part of the internal electrode layer. The ceramic layer includes a perovskite compound represented by ABO3 as a main component. The external electrode includes a conductor and a glass frit diffused in the conductor. The glass frit includes B, Si, Ba, and Zn. A boundary layer is present at an end of the ceramic layer in contact with the external electrode on the end surface of the element body and comprises an oxide including Ba, Zn, and Si.

Abstract: An electronic device includes chip components, a case, conductive terminals, and a fuse. The chip components each include a terminal electrode. The case includes accommodation recesses for accommodating the chip components. The conductive terminals are fixed to the case and respectively connected to the terminal electrodes of the chip components. The fuse electrically connects the chip components.

Abstract: A dielectric composition includes dielectric particles and segregation phases. The dielectric particles each include Ca and/or Sr. The segregation phases each include Mn, Si, O, and at least one selected from Ca and Sr.

Abstract: A solder includes a Sn alloy phase and a particle. The particle has a higher Young's modulus than the Sn alloy phase. The particle has a lower linear expansion coefficient than the Sn alloy phase. An electronic component includes a metal terminal joined thereto with the solder.

Abstract: Provided is a dielectric composition containing: a main component expressed by {BaxSr(1-x)}mTa4O12; and a first subcomponent, m satisfying a relationship of 1.95?m?2.40. The first subcomponent includes silicon and magnesium. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 7.5 to 15.0 parts by mole in terms of SiO2, and the amount of magnesium contained in the dielectric composition is 5.0 to 22.5 parts by mole in terms of MgO.

Abstract: A ceramic electronic device includes an element body and an external electrode. The element body is formed by laminating a ceramic layer and an internal electrode layer. The external electrode is electrically connected to at least one end of the internal electrode layer. The external electrode includes a baked electrode layer. The baked electrode layer includes a first region and a second region. The first region is contacted with an end surface of the element body and located near a joint boundary with the element body. The second region is located outside the first region and constituting an outer surface of the baked electrode layer. The first region includes a first glass having a predetermined composition. The second region includes a second glass having a predetermined composition.