Abstract: A spin-valve type thin film element includes an antiferromagnetic layer, a pinned magnetic layer, a free magnetic layer, a non-magnetic electrically conductive layer, a bias layer, and an electrically conductive layer. The magnetization direction of the pinned magnetic layer in the end regions in relation to the track width is fixed in the direction of the leakage magnetic field from a recording medium, and the magnetization direction of the pinned magnetic layer in the central region is fixed in the direction inclined in relation to the direction of the leakage magnetic field from the recording medium. A method for manufacturing a spin-valve type thin film element includes the steps of forming a multi-layered film, magnetic annealing at a temperature T1, patterning the multi-layered film into a predetermined shape, forming a bias layer on both sides of the multi-layered film, magnetizing the bias layer, annealing without applying a magnetic field at a temperature T2, and magnetizing the bias layer.

Abstract: A solid-state imaging device comprises a plurality of pixels, each pixel comprising a semiconductor substrate; a photo-receiving portion formed in the semiconductor substrate; a detecting region formed in the semiconductor substrate; an insulating film formed on the semiconductor substrate, a gate electrode formed on the insulating film above the region between the photo-receiving portion and the detecting region; and a read-out circuit, which is electrically connected to the detecting portion. A reflection reducing film is formed on the insulating film above the region including at least one part of the photo-receiving portion and excluding at least one part of the detecting portion in the semiconductor substrate. With this solid-state imaging device and with the method for manufacturing the same, a highly sensitive MOS solid-state imaging device and the method for manufacturing the same are provided.

Abstract: The pinned magnetic layer 2 is composed of a track width region 2' and a dead region 2", the track width region 2' being formed at a spaced apart relation to the bias region 5. Accordingly, magnetization of the track width region 2' is not so strongly affected by the bias region 5, thereby magnetization is fixed along the Y-direction at almost entire region of the track width region 2'. Therefore, the track width region 2' and the free magnetic region are in a crossing relation with each other giving a proper asymmetry in the entire region of the track width region 2'.

Abstract: A magnetoresistive sensor fabricated by creating first antiferromagnetic layers on the upper surfaces of a lower-gap layer the antiferromagnetic layer having first and second exposed portions separated by a track width formed by the upper surface of the lower-gap layer. Then, a free magnetic layer, a nonmagnetic electrically conductive layer, a pinned magnetic layer and a second antiferromagnetic layer are stacked on the first antiferromagnetic layers and a portion on the track width one after another. Since the free magnetic layer is created after the first antiferromagnetic layer, the free magnetic layer and the first antiferromagnetic layer are adhered to each other with a high degree of reliability. When the direction of magnetization in the free magnetic layer is changed by an external magnetic field, the electrical resistance of the magnetoresistive sensor also changes. The change in electrical resistance is, in turn, used for detecting the external magnetic field.

Abstract: This invention provides a light absorber which can be used for optical equipment like optical-disk equipment and a liquid crystal display. The light absorber has a layered structure including a light absorbing layer and a transparent layer. The light absorbing layer absorbs a reflected light from the inside of the absorber as well as incident light into the absorber while the transparent layer helps attenuate the reflected light by interference of light. One of the light absorbing layers which is thicker than others may work as a shading layer for the incident light.

Abstract: A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer.

Abstract: A magnetoresistive sensor fabricated by creating first antiferromagnetic layers on the upper surfaces of a lower-gap layer, the antiferromagnetic layer having first and second exposed portions separated by a track width formed by the upper surface of the lower-gap layer. Then, a free magnetic layer, a nonmagnetic electrically conductive layer, a pinned magnetic layer and a second antiferromagnetic layer are stacked on the first antiferromagnetic layers and a portion on the track width one after another. Since the free magnetic layer is created after the first antiferromagnetic layer, the free magnetic layer and the first antiferromagnetic layer are adhered to each other with a high degree of reliability. When the direction of magnetization in the free magnetic layer is changed by an external magnetic field, the electrical resistance of the magnetoresistive sensor also changes. The change in electrical resistance is, in turn, used for detecting the external magnetic field.

Abstract: A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer.

Abstract: The present invention provides a magnetoresistive head wherein: a magnetoresistive film is created in a read-track region at the center of the magnetoresistive head; an antiferromagnetic film and a ferromagnetic film experiencing an exchange coupling magnetic field due to direct contact with the antiferromagnetic film are created on each end of the magnetoresistive film outside the read-track region in such a way that the ferromagnetic film is located beside the magnetoresistive film; a nonmagnetic intermediate film is created between the magnetoresistive film and the ferromagnetic film for preventing ferromagnetic coupling from being developed on a contact boundary surface between the magnetoresistive film and the ferromagnetic film and for making crystal orientations of the antiferromagnetic film and the ferromagnetic film uniform; and bias magnetization is applied to the magnetoresistive film by exchange coupling between the antiferromagnetic film and the ferromagnetic film.

Abstract: A magnetoresistive head including a magnetoresistive film formed in a read-track region, and antiferromagnetic and ferromagnetic films are formed on each end of the magnetoresistive film outside of the read-track region such that bias magnetization is applied to the magnetoresistive film by exchange coupling between the antiferromagnetic film and the ferromagnetic film. A nonmagnetic intermediate film is formed between the ferromagnetic film and the magnetoresistive film for preventing ferromagnetic coupling on a contact boundary surface between the ferromagnetic film and the magnetoresistive film. In accordance with another aspect, a magnetoresistive head includes an antiferromagnetic layer formed from an X--Mn alloy, where X is an element selected from the group consisting of Pt, Rh, Ru, Tr, and Pd. An interdiffusion layer is formed between the antiferromagnetic film and a ferromagnetic layer or a pinned magnetic layer by heat treatment.

Abstract: In a magnetoresistive magnetic head having a laminate composed of a magnetoresistive (MR) layer showing the magnetoresistive effect, a SHUNT layer as a non-magnetic layer and a soft adjacent layer (SAL) for applying a transverse bias magnetic field to the MR layer, the MR layer and the SAL are made of the same Ni.sub.81 Fe.sub.19 magnetic film. Since the SAL is magnetically saturated in the same direction as the direction of leakage flux of a recording medium (y direction), permeability thereof in the y direction decreases, and the MR effect function therein can be restricted. Although the MR layer and the SAL have the same specific resistance .rho., a sufficient detection current can be made to flow through the MR layer and a high-precision magnetic detection output can be obtained by making the MR layer thicker than the SAL.

Abstract: A magnetic sensor includes a magnetoresistive effect layer (MR layer), on which permanent magnet layers are superimposed, the permanent magnet layers having slanted edges forming an angle .phi. with respect to the direction of an electric current I. The electrical resistance of the permanent magnet layers is higher than that of the MR layer. Due to the N and S polarities of the opposing slanted edges, sections of the MR layer located between the opposing slanted edges are magnetized with the angle .phi. such that a single magnetic domain is formed. The direction of magnetization M is at an angle .phi. of approximately 45.degree. with respect to the electric current I, so that it is possible to detect a change in the electrical resistance of the MR layer whenever there is a change in the external magnetic field H. Since the sections of the MR layer located between the opposing slanted edges are effected by the single magnetic domain in a direction having the angle .phi.

Abstract: A magnetic head for photo-magnetic recording wherein an adaptor is attached to the distal end of a load beam, and a slider is joined to the adaptor via a flexure. A flat portion of the adaptor to which is attached the flexure is inclined at a given angle in the radial direction of a photo-magnetic disk, or the flat portion of the adaptor and a tongue of the flexure are inclined at respective given angles in the rotational direction of the photo-magnetic disk. The sliding mounting height is set optionally, a static attitude of the slider is held horizontally and stably, and the head is reduced in size and weight to permit high-speed access.

Abstract: A solid state image sensor includes a semiconductor substrate of a first conductivity type, in a plurality of cell units formed in the surface region of the semiconductor substrate. Each of the cell units includes a photo detector portion and an electric charge reading portion. The photo detector portion includes a first impurity region of a second conductivity type formed in the surface region of the semiconductor substrate and a second impurity diffusion region of the first conductivity type formed in the surface region of the first impurity region. The electric charge reading portion includes a third impurity region of the second conductivity type formed in the surface of the semiconductor substrate, a first insulation film formed on the third impurity diffusion region and an electrode formed in the first insulation film.

Abstract: In a solid state image sensing device of p-conductivity type well, photo-electro converting region (1) are configurated to have larger area as depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon.

Abstract: A floating type magnetic head for a magnetic disk drive. A slider, in which a magnetic core is incorporated, is fixed by adhesive to a gimbal with a hole formed on the side of the gimbal in contact with the magnetic core. Deformation of the magnetic core by the adhesive is prevented and the position of the magnetic core with respect to the magnetic disk is stabilized without deforming the magnetic core.

Abstract: In a solid state image sensing device of P-conductivity type well, photo-electro converting region (1) are configured to have a larger area as the depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon.

Abstract: A floating magnetic head of the composite type wherein a slider and a magnetic core are joined integrally together, is characterized in that a metallic magnetic thin film is interposed between the abutting surfaces of half cores of a pair made of oxide magnetic material and composing the magnetic core, a gap between the abutting surfaces of the paired half cores is made in the form of a wedge so that it becomes wider as coming closer to the interior, and the width of a magnetic gap is restricted by an end portion of the wedge-shaped gap on the side facing opposite a magnetic recording medium.

Abstract: A floating-type magnetic head comprises a leading magnetic core, a trailing magnetic core, and a thin layer of a magnetic metal formed between the cores. A first magnetic gap is formed between the leading core and the thin film. A second magnetic gap is formed between the thin layer and the trailing core. The depth Gd of the end surface of the leading core is set to a value less than 10 microns. The depth h of the end surface of the trailing core is set to a value exceeding 100 microns.

Abstract: A magnetic head including a first magnetic gap formed adjacent to one end face of magnetic cores which are spaced opposite from each other by a predetermined distance and which are made of magnetic material, said gap having a predetermined thickness and being made of nonmagnetic thin film; a magnetic thin film layer formed adjacent to the first magnetic gap and having a predetermined thickness; and a second magnetic gap formed narrow between the magnetic thin film layer and the other end face of the magnetic cores; wherein the second magnetic gap is made of Cr.