Abstract: An electrode on a main surface of a module board, to which an emitter electrode of a semiconductor chip which includes a switching element of a power supply control circuit that supplies a power supply voltage to amplifier circuit parts of a power module of a digital cellular phone, is electrically connected to a wiring in an internal layer of the module board through a plurality of via holes. Further, the wiring is electrically connected to an electrode for the supply of the power supply voltage, which is provided on a back surface of the module board. Accordingly, an output characteristic of the semiconductor device is improved.

Abstract: A semiconductor device includes: a semiconductor chip having a plurality of pads formed on the main surface thereof; chip components having connection terminals formed on both ends thereof; a module board on which the semiconductor chip and the chip components are mounted; solder connection portions for connecting the chip components to the terminals of the module board and connecting the semiconductor chip to the module board by solder; gold wires for connecting pads of the semiconductor chip to terminals of the module board corresponding thereto; and a sealing section which covers the semiconductor chip, the chip components, solder connection portions and gold wires and is formed of an insulating elastic resin such as silicone resin, wherein the wire height is set to 0.2 mm or less and the wire length is set to 1.5 mm or less so as to prevent the gold wires from being broken.

Abstract: The present invention provides early insulin secretion stimulators consisting of triterpenes represented by the following general formula (1) and/or triterpenes represented by the following general formula (2). [where R1 represents COOH, etc., R11 and R12 represent CH2OH, etc., X1 represents hydrogen or OH and X11, X12, X21 and X22 represent OH, etc.

Abstract: The invention provides an early insulin secretion stimulator comprising corosolic acid, etc. The early insulin secretion stimulator of the invention is capable of rapidly inducing secretion of insulin immediately after meals without inducing secretion of insulin in the absence of blood glucose increase.

Abstract: A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3 and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.

Abstract: An electrode on a main surface of a module board, to which an emitter electrode of a semiconductor chip which includes a switching element of a power supply control circuit that supplies a power supply voltage to amplifier circuit parts of a power module of a digital cellular phone, is electrically connected to a wiring in an internal layer of the module board through a plurality of via holes. Further, the wiring is electrically connected to an electrode for the supply of the power supply voltage, which is provided on a back surface of the module board. Accordingly, an output characteristic of the semiconductor device is improved.

Abstract: A flux cored wire for gas shielded arc welding with a mixed gas comprising argon and carbon dioxide which comprises:a seam-welded steel sheath; and a core filled in the steel sheath and comprising, all in weight percent:a slag and arc stabilizer comprising 4.0 to 6.0% TiO.sub.2, 0.2 to 0.8% SiO.sub.2, 0.4 to 0.8% ZrO.sub.2, 0.2 to 0.8% Al.sub.2 O.sub.3, 0.06 to 0.25% Na.sub.2 O+K.sub.2 O, and 0.1 to 0.4% metal fluoride;an alloying agent and metal deoxidizer comprising 0.03 to 0.06% C, 0.20 to 0.80% Si, 1.50 to 2.20% Mn, and 0.30 to 0.60% Mg; andnot less than 2% Fe;in which the difference between the percentages of iron or a combination of Na and K segregated in any two quartered cross section of the wire that are defined by equations (1) and (2) in the specification are not more than 10% and not more than 0.15%, respectively.