Abstract: A resin composition that contains (A) at least one of a polyimide precursor, which is at least one resin selected from the group consisting of a polyamide acid, a polyamide acid ester, a polyamide acid salt, and a polyamide acid amide, or a polyimide resin, and (B) a solvent, and that is used for preparing an insulating film for at least one of a first organic insulating film or a second organic insulating film in a method for producing a semiconductor device including processes (1) to (5).

Abstract: Provided is a semiconductor element mounting structure, including: a semiconductor element including an element electrode, and a substrate including a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, the semiconductor element and the substrate being connected via the element electrode and the substrate electrode, in which: one of the element electrode or the substrate electrode is a first protruding electrode including a solder layer at a tip portion thereof, the other of the element electrode or the substrate electrode is a first electrode pad including one or more metal protrusions on a surface thereof, the one or more metal protrusions of the first electrode pad extend into the solder layer of the first protruding electrode, and a bottom area of each of the one or more metal protrusions of the first electrode pad is 70% or less with respect to an area of the first electrode pad, or 75% or less with respect to a maximum cross-sect

Abstract: A method for producing a semiconductor device of the present invention includes: step (I) of disposing one or more semiconductor elements each having an active surface, on a thermosetting resin film containing a thermosetting resin composition, such that the thermosetting resin film and the active surfaces of the semiconductor elements come into contact; step (II) of encapsulating the semiconductor elements disposed on the thermosetting resin film with a member for semiconductor encapsulation; step (III) of providing openings in the thermosetting resin film or a cured product thereof after step (II), the openings extending to the active surfaces of the semiconductor elements; and step (IV) of filling the openings with a conductor or forming a conductor layer inside the openings.

Abstract: Provided is a semiconductor element mounting structure, including: a semiconductor element including an element electrode, and a substrate including a substrate electrode that is provided on a surface facing the semiconductor element at a position facing the element electrode, the semiconductor element and the substrate being connected via the element electrode and the substrate electrode, in which: one of the element electrode or the substrate electrode is a first protruding electrode including a solder layer at a tip portion thereof, the other of the element electrode or the substrate electrode is a first electrode pad including one or more metal protrusions on a surface thereof, the one or more metal protrusions of the first electrode pad extend into the solder layer of the first protruding electrode, and a bottom area of each of the one or more metal protrusions of the first electrode pad is 70% or less with respect to an area of the first electrode pad, or 75% or less with respect to a maximum cross-sect

Abstract: A method for producing a semiconductor device of the present invention includes: step (I) of disposing one or more semiconductor elements each having an active surface, on a thermosetting resin film containing a thermosetting resin composition, such that the thermosetting resin film and the active surfaces of the semiconductor elements come into contact; step (II) of encapsulating the semiconductor elements disposed on the thermosetting resin film with a member for semiconductor encapsulation; step (III) of providing openings in the thermosetting resin film or a cured product thereof after step (II), the openings extending to the active surfaces of the semiconductor elements; and step (IV) of filling the openings with a conductor or forming a conductor layer inside the openings.

Abstract: The objective of the present invention is to obtain a semiconductor resin composition having a sufficiently low coefficient of linear expansion of the cured product thereof and a uniform distribution of inorganic particles in the direction of film thickness of a produced semi-cured film thereof. The semiconductor resin composition, which contains (a) an epoxy compound, (b) inorganic particles, (c) a polyimide, and (d) a solvent, is characterized by further containing (e) rubber particles and by the fraction of the (b) inorganic particles in the weight of the total solid fraction resulting from subtracting the weight of the (d) solvent from the total weight of the semiconductor resin composition being 60-92 wt % inclusive.

Abstract: Provided is a resin sheet, wherein in a stress measurement in which a dynamic shear strain is applied in a direction parallel to a surface, the difference between a loss tangent as measured when a strain amplitude is 10% of the sheet thickness and a loss tangent as measured when the amplitude is 0.1% is equal to or greater than 1 at a temperature of 80° C. and a frequency of 0.5 Hz. The resin sheet of the present invention can provide a semiconductor device with excellent connection reliability, wherein air bubbles and cracks are less likely to occur in the resin sheet. In the resin composition of the present invention, aggregates are less likely to occur during storage. The resin sheet obtained by forming the resin composition into a sheet has good flatness. The hardened material thereof can provide a circuit board or a semiconductor device with high connection reliability.

Abstract: The present invention provides an adhesive composition having excellent strength in a cracked state, and is an adhesive composition characterized by containing a polyimide (A),a polyfunctional epoxy compound (B), an epoxy curing agent (C), and inorganic particles (D), the ratio of the polyimide (A) in a nonvolatile organic component being 3.0 wt % or more and 30 wt % or less, the ratio of the epoxy curing agent (C) in the nonvolatile organic component being 0.5 wt % or more and 10 wt % or less, and T/M being 400 or more and 8000 or less, where T is the total number of grams of the nonvolatile organic component, and M is the number of moles of epoxy groups in the nonvolatile organic component.

Abstract: The present invention relates to an adhesive agent which can be used in the mounting of a semiconductor chip on a circuit board or the like. The present invention addresses the problem of providing an adhesive agent having both excellent storage stability and excellent connection reliability. A means for solving the problem is an adhesive agent comprising (a) a polyamide, (b) an epoxy compound and (c) an acid-modified rosin.

Abstract: The present invention provides an adhesive composition having excellent strength in a cracked state, and is an adhesive composition characterized by containing a polyimide (A), polyfunctional epoxy compound (B), an epoxy curing agent (C), and inorganic particles (D), the ratio of the polyimide (A) in a nonvolatile organic component being 3.0 wt % or more and 30 wt % or less, the ratio of the epoxy curing agent (C) in the nonvolatile organic component being 0.5 wt % or more and 10 wt % or less, and T/M being 400 or more and 8000 or less, where T is the total number of grams of the nonvolatile organic component, and M is the number of moles of epoxy groups in the nonvolatile organic component.

Abstract: The objective of the present invention is to obtain a semiconductor resin composition having a sufficiently low coefficient of linear expansion of the cured product thereof and a uniform distribution of inorganic particles in the direction of film thickness of a produced semi-cured film thereof. The semiconductor resin composition, which contains (a) an epoxy compound, (b) inorganic particles, (c) a polyimide, and (d) a solvent, is characterized by further containing (e) rubber particles and by the fraction of the (b) inorganic particles in the weight of the total solid fraction resulting from subtracting the weight of the (d) solvent from the total weight of the semiconductor resin composition being 60-92 wt % inclusive.

Abstract: Provided is a resin sheet, wherein in a stress measurement in which a dynamic shear strain is applied in a direction parallel to a surface, the difference between a loss tangent as measured when a strain amplitude is 10% of the sheet thickness and a loss tangent as measured when the amplitude is 0.1% is equal to or greater than 1 at a temperature of 80° C. and a frequency of 0.5 Hz. The resin sheet of the present invention can provide a semiconductor device with excellent connection reliability, wherein air bubbles and cracks are less likely to occur in the resin sheet. In the resin composition of the present invention, aggregates are less likely to occur during storage. The resin sheet obtained by forming the resin composition into a sheet has good flatness. The hardened material thereof can provide a circuit board or a semiconductor device with high connection reliability.

Abstract: The present invention relates to an adhesive agent which can be used in the mounting of a semiconductor chip on a circuit board or the like. The present invention addresses the problem of providing an adhesive agent having both excellent storage stability and excellent connection reliability. A means for solving the problem is an adhesive agent comprising (a) a polyamide, (b) an epoxy compound and (c) an acid-modified rosin.

Abstract: A paste composition containing an inorganic filler, a resin and a solvent, wherein the paste composition is characterized in that it contains one or more solvents of which the boiling point is 160° C. or higher and an inorganic filler of which the mean particle diameter is 5 ?m or smaller, and the total content of the solvent is 25 wt % or less based on the total amount of the paste composition, and a dielectric composition containing an inorganic filler and resin, wherein the inorganic filler includes inorganic fillers of at least two kinds of mean particle diameter, and the greatest mean particle diameter of said mean particle diameters is 0.1-5 ?m and is 3 times or more the minimum mean particle diameter.

Abstract: Provided is a process for producing an adhesive sheet having a singulated adhesive layer (b) on a carrier film (a), comprising the following steps in the order mentioned: Step A: cutting an adhesive film having a carrier film (a), an adhesive layer (b), and a cover film (c) in the order mentioned locally only at the adhesive layer (b) and the cover film (c) by means of local half-cutting; Step B: peeling only the cover film (c) at unwanted parts of the adhesive film; Step C: applying adhesive tape to the side of the cover film (c) of the adhesive film; and Step D: peeling the adhesive layer (b) at unwanted parts and the cover film (c) at desired parts of the adhesive film together with the adhesive tape. Also provided are a process for producing an adhesive sheet comprising a singulated adhesive disposed at a specific position, and equipment for producing an adhesive sheet.

Abstract: An adhesive sheet for production of a semiconductor device with bump electrode, including a soft film and an alkali-soluble adhesive film formed on the soft film is capable of exposing the bump electrode without imparting damage to the bump electrode, and then wet etching of an adhesive on bump tops using an aqueous alkali solution makes it possible to put into a state where no adhesive exists on the bump tops, thus enabling the production of a semiconductor device which is excellent in connection reliability after flip chip packaging.

Abstract: Disclosed is a method for producing a semiconductor device in which solder joints are made between a semiconductor chip with bumps and a substrate with electrodes corresponding to the bumps through a thermosetting adhesive layer, the method including the successive steps of: (A) forming a thermosetting adhesive layer in advance on a surface including bumps of the semiconductor chip; (B) laying a surface on the thermosetting adhesive layer side of the semiconductor chip, on which the thermosetting adhesive layer is formed, and a substrate one upon another, followed by pre-bonding using a heat tool to obtain a pre-bonded laminate; and (C) interposing a protective film having a thermal conductivity of 100 W/mK or more between the heat tool and a surface on the semiconductor chip side of the pre-bonded laminate, melting a solder between the semiconductor chips and the substrate and simultaneously curing the thermosetting adhesive layer using the heat tool.

Abstract: A resin composition excellent in both characteristics of preservation stability and connection reliability is provided by a resin composition that contains (a) an epoxy compound, (b) a microcapsule type hardening acceleration agent, and (c) an inorganic particle whose surface is modified with a compound that has an unsaturated double bond.

Abstract: An adhesive composition for semiconductor containing an organic-solvent-soluble polyimide (a), an epoxy compound (b) and a hardening accelerator (c), wherein per 100 wt parts of the epoxy compound (b), there are contained 15 to 90 wt parts of the organic-solvent-soluble polyimide (a) and 0.1 to 10 wt parts of the hardening accelerator (c), wherein the epoxy compound (b) contains a compound being liquid at 25° C. under 1.013×105 N/m2 and a compound being solid at 25° C. under 1.013×105 N/m2, and wherein a ratio of compound being liquid based on all the epoxy compounds is 20 wt % or more and 60 wt % or less.

Abstract: The purpose of the present invention is to provide an adhesive composition, which has high thermal conductivity and excellent adhesion, and wherein dispersibility of a thermally conductive filler is controlled. The adhesive composition is configured to contain (A) a soluble polyimide, (B) an epoxy resin and (C) a thermally conductive filler. The adhesive composition is characterized in that the soluble polyimide (A) contains a structure represented by general formula (1) as a component derived from a diamine and the amount of the thermally conductive filler (C) contained in the adhesive composition is not less than 60% by volume. (In general formula (1), X represents an integer of 1-10 (inclusive) and n represents an integer of 1-20 (inclusive).