Abstract: A semiconductor device is designed such that a semiconductor sensor chip having a diaphragm for detecting pressure variations based on the displacement thereof is fixed onto the upper surface of a substrate having a rectangular shape, which is covered with a cover member so as to form a hollow space embracing the semiconductor sensor chip between the substrate and the cover member. Herein, the substrate is sealed with a molded resin such that chip connection leads packaging leads are partially exposed externally of the molded resin; the chip connection leads are electrically connected to the semiconductor sensor chip and are disposed in line along one side of the semiconductor sensor chip; and the packaging leads are positioned opposite the chip connection leads by way of the semiconductor sensor chip. Thus, it is possible to downsize the semiconductor device without substantially changing the size of the semiconductor sensor chip.

Abstract: An easy and inexpensive process by which a concentrate of a given unsaturated fatty acid can be obtained from a mixture which has conventionally been difficult to concentrate. The process, which is for producing a concentrate of a desired isomer (a) from a conjugated fatty acid mixture (A), is characterized by comprising: a step in which the conjugated fatty acid mixture (A) is mixed with at least one unsaturated fatty acid (B) to obtain a mixture solution containing the isomer (a) dissolved therein; a crystallization step in which either crystals rich in the isomer (a) or crystals poor in the isomer (a) are precipitated from the mixture solution; and a solid-liquid separation step for obtaining the crystals rich in the isomer (a) or for obtaining a solution rich in the isomer (a) by removing the crystals poor in the isomer (a).

Abstract: A semiconductor device is produced using a housing having a hollow cavity for embracing a semiconductor sensor chip (e.g., a microphone chip) for detecting pressure variations and an LSI chip for driving the semiconductor sensor chip, both of which are mounted on a chip mount surface. An opening allowing the cavity to communicate with external space is formed at a prescribed position of the chip mount surface within the housing, wherein the LSI chip is positioned above the opening so as to cover at least a part of the opening of the housing. Thus, it is possible to reduce negative influences of environmental factors applied to the semiconductor sensor chip without using an environmental barrier, and it is possible to downsize the semiconductor device.

Abstract: An electroacoustic transducer serving as a speaker or a microphone is reduced in size and weight and is capable of generating sound with relatively high sound pressure. It is constituted of a housing having a cavity having an opening in the exterior, a fixed electrode positioned opposite to the opening of the housing, a diaphragm having an electrode positioned between the opening and the fixed electrode, and an elastic deformation portion for supporting the diaphragm with respect to the housing and for allowing the diaphragm to vibrate in the thickness direction. The fixed electrode is electrically insulated from the electrode of the diaphragm. The diaphragm is distanced from the fixed electrode by means of the elastic deformation portion placed in the balanced state. When the elastic deformation portion is subjected to elastic deformation, the diaphragm vibrates with relatively large amplitude such that it comes in contact with the fixed electrode.

Abstract: An electrostatic capacity sensor includes a sensor die including a bias electrode and a signal electrode, which are positioned opposite to each other with a very small distance therebetween, and a shield member including a potential stabilizing conductive film whose external shape encompasses the vertically projected area of the signal electrode. The sensor die joins the joint surface of the shield member. The signal electrode is positioned between the bias electrode and the potential stabilizing conductive film. A noise shield adapted to the signal electrode is formed using the bias electrode and the potential stabilizing conductive film; hence, it is possible to improve the noise resistance of the signal electrode and to increase the S/N ratio in sensitivity.

Abstract: A microphone module is mounted on a mount portion of a circuit board incorporated in a portable electronic device, wherein it includes a housing having a hollow cavity and a sound hole for communicating the hollow cavity with the exterior, a microphone chip for detecting sound in the hollow cavity, a plurality of external connection terminals electrically connected to the microphone chip, and a plurality of extended portions that are horizontally extended from the housing in a direction perpendicular to the opening direction of the sound hole. The external connection terminals are formed on the surfaces of the extended portions; and the housing partially projects from the surfaces of the extended portions.

Abstract: A semiconductor microphone unit includes a semiconductor microphone chip having a diaphragm covering an inner hole of a support. The support is adhered onto the surface of a support substrate whose thermal expansion coefficient higher than the thermal expansion coefficient of the support via a thermosetting adhesive in such a way that the diaphragm is positioned opposite to the surface of the support substrate. The thermosetting adhesive has a tensile elastic modulus allowing a contraction of the support substrate to be transmitted to the support in a hardened state when the semiconductor microphone chip is cooled together with the support substrate. Thus, it is possible to reduce the tensile stress of the diaphragm, which occurs during the manufacturing of the semiconductor microphone chip, thus preventing the diaphragm from being unexpectedly reduced in strength; hence, it is possible to improve the sensitivity of the semiconductor microphone chip.

Abstract: An easy and inexpensive process by which a concentrate of a given unsaturated fatty acid can be obtained from a mixture which has conventionally been difficult to concentrate. The process, which is for producing a concentrate of a desired isomer (a) from a conjugated fatty acid mixture (A), is characterized by comprising: a step in which the conjugated fatty acid mixture (A) is mixed with at least one unsaturated fatty acid (B) to obtain a mixture solution containing the isomer (a) dissolved therein; a crystallization step in which either crystals rich in the isomer (a) or crystals poor in the isomer (a) are precipitated from the mixture solution; and a solid-liquid separation step for obtaining the crystals rich in the isomer (a) or for obtaining a solution rich in the isomer (a) by removing the crystals poor in the isomer (a).

Abstract: A semiconductor device is designed such that a semiconductor sensor chip having a diaphragm for detecting pressure variations based on the displacement thereof is fixed onto the upper surface of a substrate having a rectangular shape, which is covered with a cover member so as to form a hollow space embracing the semiconductor sensor chip between the substrate and the cover member. Herein, the substrate is sealed with a molded resin such that chip connection leads packaging leads are partially exposed externally of the molded resin; the chip connection leads are electrically connected to the semiconductor sensor chip and are disposed in line along one side of the semiconductor sensor chip; and the packaging leads are positioned opposite the chip connection leads by way of the semiconductor sensor chip. Thus, it is possible to downsize the semiconductor device without substantially changing the size of the semiconductor sensor chip.

Abstract: A condenser microphone includes a substrate having a cavity, first and second spacers defining an opening, a diaphragm having a rectangular shape positioned inside of the opening, and a plate having a rectangular shape positioned just above the diaphragm. Plate joint portions integrally interconnected with two sides of the plate are directly attached onto the second spacer. Supports, which are attached onto the second spacer across the opening and project inwardly of the opening, are connected to the prescribed portions of the diaphragm via third spacers relatively to the other two sides of the plate. The center portion of the diaphragm can be designed in a multilayered structure, and the peripheral portion can be bent outwardly. In addition, both ends of the diaphragm are fixed in position, while free ends of the diaphragm vibrate due to sound waves.

Abstract: A condenser microphone includes a support, a plate having a fixed electrode bridged across the supports, a diaphragm, which has a moving electrode at a center portion thereof and which vibrates due to sound waves applied thereto, and a spacer, in which a first end is fixed to the plate, and a second end is fixed to the near-end portion of the diaphragm so as to surround the center portion of the diaphragm, wherein an air gap is formed between the plate and the diaphragm. This reduces the tensile stress of the diaphragm so as to increase the amplitude of vibration of the diaphragm. Hence, it is possible to increase the sensitivity of the condenser microphone. A structure constituted of the plate, the diaphragm, and the spacer is bridged across the support by means of the bridges, which absorb the residual stress of the diaphragm due to the deformation thereof.

Abstract: A semiconductor device of the invention includes: a substrate having a hollowed hollow section on a top surface; a semiconductor chip mounted in the hollow section of the substrate; and a lid having a substantially plate-shaped top plate section that opposes the substrate and covers the hollow section, and having at least one pair of side wall sections that project from a circumference of the top plate section towards the substrate and that engage with a side surface of the substrate.

Abstract: Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

Abstract: In order to realize a magnetic resistance device having a high magnetic resistance change rate, satisfactory production yield and a low level of variation in production, a pair of magnetic tunnel resistance devices 2 employing a laminated structure comprised of antiferromagnetic film 8, lower magnetic layer 9, barrier film 10 and upper magnetic layer 11 are independently and separately formed by ion beam etching on a lower electrode 3 and in common with said lower electrode 3 provided on a substrate 5. A pair of independent upper electrodes 4 are formed on upper magnetic layer 11. As a result, a pair of magnetic tunnel resistance devices 2 are formed connected in series on substrate 5.

Abstract: Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

Abstract: A magnetic sensor comprises a thin-film-like magnetic tunnel effect element (magnetoresistive effect element) 11. A coil 21 is disposed in a plane under the magnetic tunnel effect element 11 and parallel to a thin-planar film surface of the element. The coil 21 is a double spiral type coil which includes a first spiral conductor portion 21-1 and a second spiral conductor portion 21-2. The magnetic tunnel effect element 11 is disposed between a spiral center P1 of the first conductor portion 21-1 and a spiral center P2 of the second conductor portion 21-2 in a plan view. The first and second conductor portions 21-1 and 21-2 are connected such that electric currents in the same direction pass through a part of the first conductor portion 21-1 that overlaps the magnetic tunnel effect element 11 in a plan view and through a part of the second conductor portion 21-2 that overlaps the magnetic tunnel effect element 11 in a plan view.

Abstract: Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

Abstract: A magnetic sensor comprises a thin-film-like magnetic tunnel effect element (magnetoresistive effect element) 11. A coil 21 is disposed in a plane under the magnetic tunnel effect element 11 and parallel to a thin-planar film surface of the element. The coil 21 is a double spiral type coil which includes a first spiral conductor portion 21-1 and a second spiral conductor portion 21-2. The magnetic tunnel effect element 11 is disposed between a spiral center P1 of the first conductor portion 21-1 and a spiral center P2 of the second conductor portion 21-2 in a plan view. The first and second conductor portions 21-1 and 21-2 are connected such that electric currents in the same direction pass through a part of the first conductor portion 21-1 that overlaps the magnetic tunnel effect element 11 in a plan view and through a part of the second conductor portion 21-2 that overlaps the magnetic tunnel effect element 11 in a plan view.

Abstract: Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

Abstract: In order to realize a magnetic resistance device having a high magnetic resistance change rate, satisfactory production yield and a low level of variation in production, a pair of magnetic tunnel resistance devices 2 employing a laminated structure comprised of antiferromagnetic film 8, lower magnetic layer 9, barrier film 10 and upper magnetic layer 11 are independently and separately formed by ion beam etching on a lower electrode 3 and in common with said lower electrode 3 provided on a substrate 5. A pair of independent upper electrodes 4 are formed on upper magnetic layer 11. As a result, a pair of magnetic tunnel resistance devices 2 are formed connected in series on substrate 5.