Abstract: A liquid (10) stored in a generation chamber (2) is sprayed by an injection nozzle (33) using pressurized gas introduced to it. This strikes a buffer valve (4) where it is atomized. The generated mist is held in the generation chamber (2). The atomized generated mist is introduced into a particle classifier (5) and made to collide with a collision plate (52). The particles of less than 10 ?m size bouncing off the collision plate are discharged as a micro-mist from a discharge port (56) and fed to a target workpiece. The large particles deposited on the collision plate are recovered in a generator.

Abstract: A method for filling a fluidized material into a hole having a bottom, the hole disposed on one surface of a sheet member, the method includes the steps of: depressurizing a first closed space, which is formed on the one surface of the sheet member; depressurizing a second closed space, which is adjacent to the first closed space and accumulates the fluidized material; displacing the hole together with the sheet member to the second closed space, the hole depressurized in the first closed space; applying the fluidized material on the surface of the sheet member; and filling the applied fluidized material into the hole.

Abstract: The present invention provides a method and apparatus of recycling a printed circuit board for separating and retrieving a metallic material, which includes a printed metallic material, and an insulating material, both composing the printed circuit board. Both the metallic material and the insulating material, which are separated and retrieved, are possible for recycling. In the method for recycling the printed circuit board, hot filtration equipment 4a and resin-metal separation equipment 51 are used in hot filtration process P400. The waste printed circuit board 1 is heated and force-filtered so that only the insulating material 1a pass through the filter. Then, the insulating material 1a and the metallic material 1b are separated and retrieved. It is preferred that the insulating body base 23 of the printed circuit board 100 as the waste printed circuit board is made of thermoplastic resin or a mixture of thermoplastic resin and inorganic loading material.

Abstract: A wafer protected by a protective film on a first surface is mounted on a base member. An etching bath cylinder, to which a gasket for sealing the periphery of the wafer on a second surface that is opposite to the first surface is attached, is placed on the wafer. An etching chamber is formed by vacuum chucking with a vacuum chuck cylinder in an etching pot. Nitrogen gas is supplied from a high pressure gas supply source to a hermetic room, which is formed by the base member and the wafer, while being regulated by a pressure regulator. The pressure regulator includes a water reservoir, a decompressing room having an orifice, a first balance tube, and a second balance tube. The wafer is etched while a pressure higher than that applied to the second surface from an etchant is put on the protective film by the nitrogen gas.

Abstract: To supply microfine liquid droplets to a microscopic space for enabling micromachining and provide a method and an apparatus for forming the microfine liquid droplets, there is provided a method and an apparatus for generating liquid fine particles, comprising atomizing a liquid, fractionating the atomized liquid particles to form microfine liquid droplets by inertial fractionation and contacting the microfine liquid droplets with a heated carrier gas, thereby thermally drying the liquid particles to form finer particles.

Abstract: A vacuum pump depressurizes a scavenging chamber to discharge the air or gas residing in a via hole. Then, a paste chamber provided adjacent to the scavenging chamber moves on the scavenged via hole. A squeezing unit provided in the paste chamber pushes a conductive paste into the via hole. Keeping the inside space of the via hole in a depressurized condition is effective to let the conductive paste enter deeply into the via hole. The inside space of the via hole is entirely filled with the conductive paste.

Abstract: A vacuum pump depressurizes a scavenging chamber to discharge the air or gas residing in a via hole. Then, a paste chamber provided adjacent to the scavenging chamber moves on the scavenged via hole. A squeezing unit provided in the paste chamber pushes a conductive paste into the via hole. Keeping the inside space of the via hole in a depressurized condition is effective to let the conductive paste enter deeply into the via hole. The inside space of the via hole is entirely filled with the conductive paste.

Abstract: A wafer protected by a protective film on a first surface is mounted on a base member. An etching bath cylinder, to which a gasket for sealing the periphery of the wafer on a second surface that is opposite to the first surface is attached, is placed on the wafer. An etching chamber is formed by vacuum chucking with a vacuum chuck cylinder in an etching pot. Nitrogen gas is supplied from a high pressure gas supply source to a hermetic room, which is formed by the base member and the wafer, while being regulated by a pressure regulator. The pressure regulator includes a water reservoir, a decompressing room having an orifice, a first balance tube, and a second balance tube. The wafer is etched while a pressure higher than that applied to the second surface from an etchant is put on the protective film by the nitrogen gas.

Abstract: After an Si wafer is anisotropically etched through an etching mask having an opening in an anisotropically etching solution, an etching face of the Si wafer emerged by the anisotropic etching is subjected to anodic oxidation by applying a positive voltage for anodic oxidation on the Si wafer. As a result, the etching face of the Si wafer is isotropically etched due to the anodic oxidation in the anisotropic etching solution. By the isotropic etching thus performed, a sharp corner formed at an end portion of a recess portion formed in the Si wafer by the anisotropic etching, is rounded. Because the isotropic etching reaction progresses very slowly in comparison with the anisotropic etching, control of the etching can be made easy and accurately. As a result, the thickness of the diaphragm can be prevented from being dispersed.

Abstract: When an IOP is transferring data at the maximal throughput because of the fact that the input-output processor (IOP) has issued a next request under a state when the request buffers are full of requests from the IOP at least a part of the requests from the instruction processor (IP) is inhibited. Inhibition of the requests from the IP is released when the pitch of the requests from the IOP reaches a predetermined period or more. When the IOP is transferring data at the maximal throughput in a system having a cache memory, access to the main memory by the IP is inhibited in case requested data does not exist in the cache memory.

Abstract: A tension apparatus for imposing a predetermined tension on a wire-like member which is used for a stator or a alternator. First and second rollers are rotatably supported on a supporting means in such a manner that a space between the first roller and the second roller is smaller than a diameter of the wire-like member. When the wire-like member is passed through a space between a first roller and a second roller, the wire-like member is deformed, and after all, a predetermined tension is imposed on the wire-like member. The tension of the wire-like member can be changed in accordance with the space between the first roller and the second roller.

Abstract: A coil assembly including a coil of material having a square or hexagonal cross section wound on a bobbin. On the coil winding surface are a plurality of first mutually parallel grooves which have a V-notch cross section and are so arranged that the centers of adjacent grooves are separated from each other by a distance of about P which is the width of said grooves. The coil winding surface also has a plurality of second mutually parallel grooves which have a V-notch cross section and are so arranged that the centers of adjacent grooves are also separated from each other by the distance P. Each of the first grooves is off-set from the corresponding second groove in the axial direction by the distance of about P/2 or less. A pair of intermediate sections with oblique grooves having a predetermined length in the circumferential direction are provided between the respective ends of the first and second grooves.

Abstract: A memory access control system for an information processing apparatus having a buffer memory and a main memory wherein when a store or access request is generated, in the case where the data block in the address to be accessed does not exist in the buffer memory, the store requested data from a data register is written into the buffer memory before the first data in the data block read out from the main memory is written into the buffer memory, and the data register is released to receive the next request.

Abstract: In a multiple-block-per-entry buffer memory (BS) of the swap or store-in type, a swap-out buffer (SOB) having a capacity for at least a block is provided. On the occasion of replacing, a memory access sequence control responds to change bits and validity bits associated with an entry to be replaced as well as the block address designated for memory access so as to execute the data transfer from a main memory (MS) to BS in preference to the sweeping-out of data from BS to SOB so long as the block to be replaced need not be stored in MS. If the block to be replaced needs to be stored, the sweeping-out into SOB is executed with the utmost priority, and the data transfer from MS is then executed in preference to the sweeping-out of any other blocks to be stored into MS.