Abstract: A forward lookup address translation table and a reverse lookup address translation table stored in a nonvolatile second storing unit are transferred as a master table to a volatile first storing unit at a time of start-up. When an event occurs so that the master table needs to be updated, difference information before and after update of any one of the forward lookup address translation table and the reverse lookup address translation table is recorded in the first storing unit as a log, thereby reducing an amount of the log.

Abstract: A semiconductor storage device includes a first storage unit having a plurality of first blocks as data write regions; an instructing unit that issues a write instruction of writing data into the first blocks; a converting unit that converts an external address of input data to a memory position in the first block with reference to a conversion table in which external addresses of the data are associated with the memory positions of the data in the first blocks; and a judging unit that judges whether any of the first blocks store valid data associated with the external address based on the memory positions of the input data, wherein the instructing unit issues the write instruction of writing the data into the first block in which the valid data is not stored, when any of the first blocks does not store the valid data.

Abstract: A memory system includes a nonvolatile memory including blocks as data erase units, a measuring unit which measures an erase time at which data in each block is erased, a block controller having a block table which associates a state value indicating one of a free state and a used state with the erase time for each block, a detector which detects blocks in which rewrite has collectively occurred within a short period, a first selector which selects a free block having an old erase time as a first block, a second selector which selects a block in use having an old erase time as a second block, and a leveling unit which moves data in the second block to the first block if the first block is included in the blocks detected by the detector.

Abstract: A memory system includes a volatile first storing unit, a nonvolatile second storing unit, and a controller. The controller stores management information of data stored in the second storing unit during a startup operation into the first storing unit and performs data management while updating the management information. The management information in a latest state stored into the first storing unit is also stored in the second storing unit. The management information includes a pre-log before and after change generated before a change occurs in the management information and a post-log, which is generated after the change occurs in the management information, concerning the change in the management information. The pre-log and the post-log are stored in the same areas of different blocks.

Abstract: A memory system includes a nonvolatile memory including blocks as data erase units, a measuring unit which measures an erase time at which data in each block is erased, a block controller having a block table which associates a state value indicating one of a free state and a used state with the erase time for each block, a detector which detects blocks in which rewrite has collectively occurred within a short period, a first selector which selects a free block having an old erase time as a first block, a second selector which selects a block in use having an old erase time as a second block, and a leveling unit which moves data in the second block to the first block if the first block is included in the blocks detected by the detector.

Abstract: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.

Abstract: A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second and third memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data outputted from the first memory area by a first management unit in the second memory area, and a third processing for storing data outputted from the first memory area by a second management unit in the third memory area.

Abstract: A semiconductor storage device includes first, second, third, fourth and fifth memory areas and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data by a first management unit in the fourth memory area, a third processing for storing data by a second management unit in the fifth memory area, a fourth processing for moving an area of the third unit to the second memory area, a fifth processing for selecting and copying data to an empty area of the third unit in the second memory area, a sixth processing for moving an area of the third unit to the third memory area, and a seventh processing for selecting and copying data to an empty area of the third unit in the third memory area.

Abstract: A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second, third, and fourth memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data by a first management unit in the fourth memory area, a third processing for storing data by a second management unit in the third memory area, a fourth processing for moving an area of the third unit having the oldest allocation order in the fourth memory area to the second memory area, and a fifth processing for selecting data in the second memory area and copying the selected data to an empty area of the third unit in the second memory area.

Abstract: A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second, third and fourth memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data by a first management unit in the fourth memory area, a third processing for storing data by a second management unit in the third memory area, a fourth processing for moving an area of the third unit from the fourth memory area to the second memory area, a fifth processing for copying data to an area of the third unit and allocating the area to the second memory area, and a sixth processing for copying data to an empty area of the third unit in the second memory area.

Abstract: A controller determines whether data stored in a first storing area should be flushed to a second storing area or a third storing area. When flushing of data in a track unit from at least one of the first storing area and the second storing area unit to the third storing area unit is determined, the controller collects data included in the flushed data in the track unit from at least one of the first storing area and the second storing area including the storing area from which the flushing of the data is determined, merges the flushed data and the collected data, and writes the merged data in the third storing area.

Abstract: A programmable gate array apparatus includes macrocells connected in series, each macrocell including first group of storage elements in which active context data item is stored and second group of storage elements corresponding to storage elements of first group respectively, in which idle context data item is stored, connects storage elements of second group in series, loads context data item into second group whose storage elements are connected in series, connects first group and second group by connecting storage elements of first group to corresponding storage elements of second group respectively, and swaps context data items between first group and second group.

Abstract: A programmable gate array apparatus includes macrocells connected in series, each macrocell including first group of storage elements in which active context data item is stored and second group of storage elements corresponding to storage elements of first group respectively, in which idle context data item is stored, connects storage elements of second group in series, loads context data item into second group whose storage elements are connected in series, connects first group and second group by connecting storage elements of first group to corresponding storage elements of second group respectively, and swaps context data items between first group and second group.

Abstract: A programmable gate array apparatus includes macrocells connected in series, each macrocell including first group of storage elements in which active context data item is stored and second group of storage elements corresponding to storage elements of first group respectively, in which idle context data item is stored, connects storage elements of second group in series, loads context data item into second group whose storage elements are connected in series, connects first group and second group by connecting storage elements of first group to corresponding storage elements of second group respectively, and swaps context data items between first group and second group.

Abstract: A programmable gate array apparatus includes macrocells connected in series, each macrocell including first group of storage elements in which active context data item is stored and second group of storage elements corresponding to storage elements of first group respectively, in which idle context data item is stored, connects storage elements of second group in series, loads context data item into second group whose storage elements are connected in series, connects first group and second group by connecting storage elements of first group to corresponding storage elements of second group respectively, and swaps context data items between first group and second group.