Abstract: During a write cycle, a selected write-word-line driver drives the corresponding write word line such that the potential of the corresponding write word line is lower in a first period as a predetermined period after an initiation of the write cycle than in a second period as a predetermined period after the first period, and sense amplifiers amplify the potentials of the corresponding write bit lines in the first period.

Abstract: A memory circuit includes a data storage section for storing a plurality of data sets and a plurality of redundant data sets, which are used for error correction for the data sets; and an error correction section for performing at least error detection for the data sets in the data storage section by using the redundant data sets when the memory circuit is not accessed from outside for data input or output, and outputting at least result of the error detection as an error detection signal. When the memory circuit is accessed so as to output a designated one of the stored data sets, the designated data set is outputted without being subjected to the error detection by the error correction section.

Abstract: The present invention makes the user easily search the nearest point which is useful for the user without making the user perform a complicated operation. The present invention provides a navigation device that obtains a current position based on information from GPS satellites, and guides a travel path from the current position to the destination on a map image which includes a display unit that displays the map image, a search unit that searches a nearest point existing around a vehicle position on the map image, a search subject range determination unit that, when a search subject area setting frame in searching the nearest point is specified by a user, determines the search subject area setting frame as a search subject range in searching by the search unit.

Abstract: In a semiconductor memory including word lines and bit lines arranged in a matrix and a plurality of memory cells provided at intersections of the word lines and the bit lines, a bit line precharge circuit is provided for controlling the potential of a low-data holding power supply coupled to memory cells provided on a corresponding one of the bit lines. In a write operation, the bit line precharge circuit controls the potential of a low-data holding power supply of a memory cell corresponding to a selected bit line to be higher than the potential of a low-data holding power supply of a memory cell corresponding to an unselected bit line.

Abstract: A semiconductor memory includes a plurality of memory cells, each of which includes a first inverter connected to one of high-data retaining supply lines which constitute one of high-data retaining supply line pairs corresponding to the memory cell and a second inverter connected to the other one of the high-data retaining supply lines which constitute the corresponding high-data retaining supply line pair, an input and output of the second inverter being connected to an output and input of the first inverter, respectively. A selected high-data retaining supply circuit receives a signal determined according to an input data signal and address signal without the intervention of any of the bit lines which constitute the bit line pairs to drive the connected high-data retaining supply lines such that it has a potential corresponding to the received signal.

Abstract: A stationary point is set on a cold end of a cryocooler. An article is mounted on the stationary point to be cooled via the stationary point. In this case, the article can be cooled up to an extremely low temperature with isolation of vibration to the article.

Abstract: In a semiconductor memory device including memory cells each having two inverters connected in a cross-coupled configuration to hold High data and Low data as a pair and two access transistors, a plurality of word lines, and a plurality of bit lines, the potential of the selected one of the plurality of word lines is controlled to be lower than a potential obtained by adding up the potential of one of Low-data-holding power sources each for holding the Low data at any time other than during a read operation and the threshold voltage of each of the access transistors.

Abstract: A semiconductor memory includes a plurality of memory cells, each of which includes a first inverter connected to one of high-data retaining supply lines which constitute one of high-data retaining supply line pairs corresponding to the memory cell and a second inverter connected to the other one of the high-data retaining supply lines which constitute the corresponding high-data retaining supply line pair, an input and output of the second inverter being connected to an output and input of the first inverter, respectively. A selected high-data retaining supply circuit receives a signal determined according to an input data signal and address signal without the intervention of any of the bit lines which constitute the bit line pairs to drive the connected high-data retaining supply lines such that it has a potential corresponding to the received signal.

Abstract: A cryogenic refrigerator includes a first refrigerant tube and a second refrigerant tube each comprising two tubes that are arranged on a cooling stage substantially parallel to each other and communicate with each other through a gas passage formed in the cooling stage. Phase differences are provided to oscillating gas pressures in the first and second refrigerant tubes, to cancel vibration of the cooling stage. Thus, the cryogenic refrigerator can be provided which can effectively reduce the vibration of the cooling stage caused by the oscillating gas pressure and can reduce the size thereof.

Abstract: A fiber sheet composed of knitted, woven, or non-woven fiber, which is resistant against contamination, and such contamination is easily washed off, and is durable, and suitable for use as materials to make curtains, tapestries, screens, flags, wallpaper, and sliding screen door (fusuma), for both indoor and outdoor environments. The fiber sheet is coated on its both sides of the fiber by ceramics composed of oxidized, nitrogenous, or carbonized forms of metals such as tin, titanium, aluminum, and other metals, forming a thin contamination resistant coating. Typically, the contamination resistant coating comprises SiO2 or SnO2 or a combination/mixture of the two substances, and such coating is hard and is superior in protection against contamination.

Abstract: A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1?x?yN, wherein x+y=1, 0?x?1, and 0?y?1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.

Abstract: In a semiconductor memory including word lines and bit lines arranged in a matrix and a plurality of memory cells provided at intersections of the word lines and the bit lines, a bit line precharge circuit is provided for controlling the potential of a low-data holding power supply coupled to memory cells provided on a corresponding one of the bit lines. In a write operation, the bit line precharge circuit controls the potential of a low-data holding power supply of a memory cell corresponding to a selected bit line to be higher than the potential of a low-data holding power supply of a memory cell corresponding to an unselected bit line.

Abstract: A system for detecting defects in paint coatings includes a temperature manipulation apparatus configured to change the temperature of a surface and a coating applied to the surface. The system may further include an infrared sensor for measuring the change in temperature (over time) of the surface and coating and a processor to compare the measured change in temperature of the surface and coating to an expected change of temperature (over time) in order to determine anomalies in the coatings. A self-referencing method of determining defects is also disclosed, wherein surrounding pixels are utilized as a reference in the detection process for calculating the change in temperature of each pixel. In addition, application of the inventive aspects to inspection of adhesion interfaces is also disclosed.

Abstract: A system for detecting defects in paint coatings includes a temperature manipulation apparatus configured to change the temperature of a surface and a coating applied to the surface. The system may further include an infrared sensor for measuring the change in temperature of the surface and coating and a processor to compare the measured change in temperature of the surface and coating to an expected change of temperature in order to determine anomalies in the coatings.

Abstract: A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1?x?yN, wherein x+y=1, 0?x?1, and 0?y?1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.

Abstract: A system for detecting defects in paint coatings includes a temperature manipulation apparatus configured to change the temperature of a surface and a coating applied to the surface. The system may further include an infrared sensor for measuring the change in temperature of the surface and coating and a processor to compare the measured change in temperature of the surface and coating to an expected change of temperature in order to determine anomalies in the coatings.

Abstract: An optical printer head that can, at a low cost, prevent the dimming of light at a lens, and an image forming apparatus that uses such an optical printer head are provided. A lens controls light, emitted by LEDs, that is used to irradiate a photosensitive drum. And since the lens is coated with a layer of resin, the resin prevents the occurrence of a chemical reaction between nitric acid, generated as a consequence of the production of ozone, and an alkali component on the surface of the lens, and prevents the dimming of light at the lens.

Abstract: A memory circuit includes a data storage section for storing a plurality of data sets and a plurality of redundant data sets, which are used for error correction for the data sets; and an error correction section for performing at least error detection for the data sets in the data storage section by using the redundant data sets when the memory circuit is not accessed from outside for data input or output, and outputting at least result of the error detection as an error detection signal. When the memory circuit is accessed so as to output a designated one of the stored data sets, the designated data set is outputted without being subjected to the error detection by the error correction section.

Abstract: A fiber sheet composed of knitted, woven, or non-woven fiber, which is resistant against contamination, and such contamination is easily washed off, and is durable, and suitable for use as materials to make curtains, tapestries, screens, flags, wallpaper, and sliding screen door(fusuma), for both indoor and outdoor environments. The fiber sheet is coated on its both sides of the fiber by ceramics composed of oxidized, nitrogenous, or carbonized forms of metals such as tin, titanium, aluminum, and other metals, forming a thin contamination resistant coating.

Abstract: A semiconductor memory device includes a replica circuit including a plurality of replica cells (RMC) having the same elements as those of memory cells in a memory array and outputting signals with levels in the stage number to a common replica bit line, and a sense amplifier control circuit for receiving a signal of the replica bit line to control a timing of a signal SAE for starting a sense amplifier circuit. The replica circuit includes a switching circuit (SW) for switching the stage number of the replica cells to be activated among the plurality of replica cells in a programmable manner.