Patents by Inventor Toshiki Ebata

Toshiki Ebata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110266274
    Abstract: The current invention relates to a semiconductor wafer heater assembly having a frosted clear quartz material for the wafer susceptor (6) that is placed between the heater (8) and the wafer (7) such that at certain wavelengths of the emitted radiant energy from the heater (8), the frosted clear quartz material is ‘thermally transmissive’ to the thermal radiation from the infrared region. The heater assembly is characterized in that the top quartz plate or susceptor (6) on which the wafer (7) is supported is made of a material that is not “optically transmissive” but is more than 90% “thermally transmissive” to infrared emission that is shorter than 3.5 micrometer wavelength and having higher tolerance and mechanical strength than conventional clear quartz material.
    Type: Application
    Filed: November 26, 2007
    Publication date: November 3, 2011
    Inventors: Toshiki Ebata, Sridhar R. Prasad, Ajay Rao, Takeshi Higuchi, Kensuke Fujimura, Akira Miyahara, Eric Witenberter
  • Patent number: 7901509
    Abstract: A heating apparatus for regulating/controlling the surface temperature of a substrate is provided. At least a thermal pyrolytic graphite (TPG) layer is embedded in the heater to diffuse the temperature difference of the various components in the heating apparatus and provide temporal and spatial control of the surface temperature of the substrate, for a relatively uniform substrate temperature with the difference between the maximum and minimum temperature points on the substrate of less than 10° C.
    Type: Grant
    Filed: October 16, 2006
    Date of Patent: March 8, 2011
    Assignee: Momentive Performance Materials Inc.
    Inventors: John Mariner, Ajit Sane, Toshiki Ebata, Marc Schaepkens, Xiang Liu, Wei Fan
  • Publication number: 20080066676
    Abstract: A heating apparatus for regulating/controlling the surface temperature of a substrate is provided. At least a thermal pyrolytic graphite (TPG) layer is embedded in the heater to diffuse the temperature difference of the various components in the heating apparatus and provide temporal and spatial control of the surface temperature of the substrate, for a relatively uniform substrate temperature with the difference between the maximum and minimum temperature points on the substrate of less than 10° C.
    Type: Application
    Filed: October 16, 2006
    Publication date: March 20, 2008
    Applicant: General Electric Company
    Inventors: John Mariner, Ajit Sane, Toshiki Ebata, Marc Schaepkens, Xiang Liu, Wei Fan
  • Publication number: 20060165994
    Abstract: Disclosed herein is a crack-free protective coating comprising at least one of aluminum nitride, aluminum oxide, aluminum oxynitride or combinations thereof. Disclosed herein too is a method for making an article comprising disposing a protective coating comprising at least one of aluminum nitride, aluminum oxide, aluminum oxynitride or combinations thereof upon a substrate comprising pyrolytic boron nitride, pyrolytic graphite and/or carbon doped boron nitride.
    Type: Application
    Filed: July 6, 2005
    Publication date: July 27, 2006
    Inventors: George Dalakos, Toshiki Ebata, Patricia Hubbard, Charles Iacovangelo, Jeffrey Lennartz, Henry Marek, Yuji Morikawa, Xiang Liu
  • Publication number: 20060008676
    Abstract: Disclosed herein is a protective coating having a compressive stress of less than 280 Mpa, for devices to be used in a corrosive environment such as halogen containing gases or halogen plasma atmosphere, e.g., wafer supporting device for use in semi-conductor processing assemblies such as electrostatic chucks, heaters, etc. The protective coating in one embodiment is crack-free, with a compressive stress of less than 250 Mpa. It is deposited onto at least one surface of the device via an ion-plating process, in which the Ar flow is kept below 5 sccm, and one embodiment, at 0 sccm, for a crack-free protective layer.
    Type: Application
    Filed: July 6, 2005
    Publication date: January 12, 2006
    Inventors: Toshiki Ebata, Yuji Morikawa
  • Patent number: 5788798
    Abstract: A plasma processing apparatus carries out plasma processings such as etching, ashing and CVD on large substrates such as semiconductor device substrates and glass substrates for liquid crystal display panels, etc. The plasma processing apparatus having microwave generator 26, a microwave guide path 23, a microwave window 4 and a reaction room 2, etc., has a dielectric sheet 21 disposed to confront the microwave window 4 through a hollow area 20. The dielectric sheet is divided into multiple dielectric sheets 21a, 21b, and the microwave guide path 23a, 23b are connected to the divided dielectric sheets 21a, 21b. This simple structure enables the stable and uniform plasma processing on large substrates such as glass substrates for liquid crystal display panels.
    Type: Grant
    Filed: May 31, 1996
    Date of Patent: August 4, 1998
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventors: Hiroshi Mabuchi, Takahiro Yoshiki, Naoki Matsumoto, Kyoichi Komachi, Shuta Kanayama, Toshiki Ebata
  • Patent number: 4774200
    Abstract: A Schottky-gate field effect transistor comprises a substrate, an active layer formed in one surface of the substrate, a Schottky gate electrode in the form of an inverted trapezoid on the active layer. A heavily doped region is formed in the one surface of the substrate at each side of the inverted trapezoid Schottky gate electrode separately from the side edge of the bottom of the Schottky gate electrode by a certain distance but in self-alignment with the corresponding side edge of the top of the inverted trapezoid Schottky gate electrode. Source and drain electrodes are respectively formed on the heavily doped regions in ohmic contact thereto in such a manner that the edge of each of the source and drain electrodes close to Schottky gate electrode is in alignment with the corresponding side edge of the top of the inverted-trapezoid gate electrode.
    Type: Grant
    Filed: March 26, 1986
    Date of Patent: September 27, 1988
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Shigeru Nakajima, Toshiki Ebata
  • Patent number: 4757033
    Abstract: The semiconductor device includes a semiconductor substrate, a two-layer insulating film formed on the substrate and constituted by upper and lower insulating layers made of insulating materials different, in chemical properties, from each other, respectively, an electrode and a first level interconnection such that the electrode and the first level interconnection are embedded in an opening formed on the two-layer insulating film.
    Type: Grant
    Filed: March 31, 1986
    Date of Patent: July 12, 1988
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Toshiki Ebata
  • Patent number: 4601095
    Abstract: A process for fabricating a Schottky-barrier gate field effect transistor, consists of forming an active layer of one electrically conductive type semiconductor crystal on one surface of a high resistivity or semi-insulating semiconductor crystal substrate, the active layer having a first active layer whose thickness and carrier concentration are so chosen as to give a predetermined value of pinch-off voltage and a second active layer having a carrier concentration which is substantially equal to that of the first active layer and having a larger thickness than that of the first active layer and provided on both sides of the first active layer; the first shallow active layer is provided with a Schottky-barrier gate electrode correctly positioned on the surface part and the second thick active layer is provided with a source electrode and drain electrode on the surface part.
    Type: Grant
    Filed: March 23, 1982
    Date of Patent: July 22, 1986
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kenichi Kikuchi, Michitomo Iiyama, Toshiki Ebata, Hideki Hayashi
  • Patent number: RE46136
    Abstract: A heating apparatus for regulating/controlling the surface temperature of a substrate is provided. At least a thermal pyrolytic graphite (TPG) layer is embedded in the heater to diffuse the temperature difference of the various components in the heating apparatus and provide temporal and spatial control of the surface temperature of the substrate, for a relatively uniform substrate temperature with the difference between the maximum and minimum temperature points on the substrate of less than 10° C.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: September 6, 2016
    Assignee: MOMENTIVE PERFORMANCE MATERIALS
    Inventors: John Mariner, Ajit Sane, Toshiki Ebata, Marc Schaepkens, Xiang Liu, Wei Fan