Patents by Inventor Toshiki Moriwaki

Toshiki Moriwaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210126040
    Abstract: An imaging device includes a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked. In the imaging device, an inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer. The inorganic oxide semiconductor material layer contains zinc (Zn) atoms and tin (Sn) atoms, and, when expressed by ZnaSnbOc, satisfies the following conditions: a+b+c=1.00, and b>a.
    Type: Application
    Filed: April 17, 2019
    Publication date: April 29, 2021
    Applicant: SONY CORPORATION
    Inventor: Toshiki MORIWAKI
  • Patent number: 10937913
    Abstract: An imaging element includes a first electrode, a second electrode, and a light receiving layer between the first electrode and the second electrode to receive incident light from the second electrode. The second electrode includes an indium-tin oxide layer which includes at least one of silicon or silicon oxide.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: March 2, 2021
    Assignee: Sony Corporation
    Inventor: Toshiki Moriwaki
  • Publication number: 20210057168
    Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes independent from each other; a second electrode disposed to be opposed to the first electrode; a photoelectric conversion layer including a quantum dot; and a semiconductor layer including an oxide semiconductor material. The photoelectric conversion layer is provided between the first electrode and the second electrode. The semiconductor layer is provided between the first electrode and the photoelectric conversion layer. A conduction band of the photoelectric conversion layer has an energy level equal to or higher than an energy level of a conduction band of the semiconductor layer.
    Type: Application
    Filed: January 18, 2019
    Publication date: February 25, 2021
    Inventors: MICHINORI SHIOMI, TOSHIKI MORIWAKI
  • Patent number: 10840466
    Abstract: Disclosed herein is an electronic device including a first electrode, a second electrode, and a photoelectric conversion layer held between the first electrode and the second electrode. The first electrode is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV, preferably from 5.5 to 5.9 eV, more preferably 5.8 to 5.9 eV.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: November 17, 2020
    Assignee: SONY CORPORATION
    Inventor: Toshiki Moriwaki
  • Publication number: 20200303446
    Abstract: An imaging element includes a photoelectric conversion section that includes a first electrode, a photoelectric conversion layer, and a second electrode stacked on one another. An inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer. The inorganic oxide semiconductor material layer includes indium (In) atoms, gallium (Ga) atoms, tin (Sn) atoms, and zinc (Zn) atoms.
    Type: Application
    Filed: October 31, 2018
    Publication date: September 24, 2020
    Applicant: SONY CORPORATION
    Inventor: Toshiki MORIWAKI
  • Publication number: 20200295219
    Abstract: An imaging element includes a photoelectric conversion unit formed by laminating a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22. Between the first electrode 21 and the photoelectric conversion layer 23A, an inorganic oxide semiconductor material layer 23B is formed in contact with the photoelectric conversion layer 23A. The photoelectric conversion unit further includes an insulating layer 82 and a charge accumulation electrode 24 disposed apart from the first electrode 21 so as to face the inorganic oxide semiconductor material layer 23B via the insulating layer 21. A material constituting the inorganic oxide semiconductor material layer 23B has a value of work function of 4.5 eV or less. A value obtained by subtracting the value of work function of the material constituting the inorganic oxide semiconductor material layer 23B from a value of work function of a material constituting the second electrode 22 exceeds 0.2 eV.
    Type: Application
    Filed: June 12, 2018
    Publication date: September 17, 2020
    Inventors: Toshiki MORIWAKI, Yuusuke YAMAZAKI, Yukio KANEDA
  • Publication number: 20200295285
    Abstract: The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.
    Type: Application
    Filed: March 10, 2017
    Publication date: September 17, 2020
    Inventors: YUKIO KANEDA, RYOJI ARAI, TOSHIKI MORIWAKI
  • Publication number: 20200266309
    Abstract: There is provided imaging devices and methods of forming the same, including a stacked structure body including a first electrode, a light-receiving layer formed on the first electrode, and a second electrode formed on the light-receiving layer, where the second electrode comprises an amorphous oxide comprising at least one of zinc and tungsten, and where the second electrode is transparent and electrically conductive and has absorption characteristics of 20% or more at a wavelength of 300 nm.
    Type: Application
    Filed: November 30, 2016
    Publication date: August 20, 2020
    Applicant: SONY CORPORATION
    Inventor: Toshiki MORIWAKI
  • Patent number: 10727429
    Abstract: An electronic device includes a first electrode 31, a light emitting/light receiving layer 20 formed on the first electrode 31, and a second electrode 32 formed on the light emitting/light receiving layer 20. The light emitting/light receiving layer 20 and/or the second electrode 32 is covered by an insulating layer 40 including a metal oxide that contains, as a main component, zinc oxide, while containing, as accessory components, at least two materials selected from the group consisting of aluminum oxide, magnesium oxide, niobium oxide, titanium oxide, molybdenum oxide and hafnium oxide.
    Type: Grant
    Filed: June 20, 2016
    Date of Patent: July 28, 2020
    Assignee: Sony Corporation
    Inventors: Toshiki Moriwaki, Mari Ichimura
  • Publication number: 20200227662
    Abstract: To provide an organic photoelectric conversion element, imaging device, and optical sensor having low dark currents, and a method of manufacturing a photoelectric conversion element. Provided is a photoelectric conversion element, including: a first electrode; an organic photoelectric conversion layer disposed in a layer upper than the first electrode, the organic photoelectric conversion layer including one or two or more organic semiconductor materials; a buffer layer disposed in a layer upper than the organic photoelectric conversion layer, the buffer layer including an amorphous inorganic material and having an energy level of 7.7 to 8.0 eV and a difference in a HOMO energy level from the organic photoelectric conversion layer of 2 eV or more; and a second electrode disposed in a layer upper than the buffer layer.
    Type: Application
    Filed: January 9, 2020
    Publication date: July 16, 2020
    Applicant: SONY CORPORATION
    Inventor: Toshiki MORIWAKI
  • Publication number: 20200119078
    Abstract: An imaging element includes a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked, in which an inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer, and the inorganic oxide semiconductor material layer includes at least two types of elements selected from the group consisting of indium, tungsten, tin, and zinc. Alternatively, a LUMO value E1 of a material included in a part of the photoelectric conversion layer positioned near the inorganic oxide semiconductor material layer and a LUMO value E2 of a material included in the inorganic oxide semiconductor material layer satisfy E1?E2<0.2 eV. Alternatively, the mobility of a material included in the inorganic oxide semiconductor material layer is equal to or greater than 10 cm2/V·s.
    Type: Application
    Filed: April 17, 2018
    Publication date: April 16, 2020
    Applicants: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Toshiki MORIWAKI, Yukio KANEDA
  • Publication number: 20200067004
    Abstract: Disclosed herein is an electronic device including a first electrode 21, a second electrode 22, and a photoelectric conversion layer 23 held between the first electrode 21 and the second electrode 22. The first electrode 21 is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV, preferably from 5.5 to 5.9 eV, more preferably 5.8 to 5.9 eV.
    Type: Application
    Filed: October 24, 2019
    Publication date: February 27, 2020
    Inventor: TOSHIKI MORIWAKI
  • Patent number: 10566601
    Abstract: An imaging element has a laminated structure including a first electrode, a light-receiving layer formed on the first electrode, and a second electrode formed on the light-receiving layer. The second electrode is made of a transparent amorphous oxide having a conductive property.
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: February 18, 2020
    Assignee: Sony Corporation
    Inventor: Toshiki Moriwaki
  • Patent number: 10559770
    Abstract: To provide an organic photoelectric conversion element, imaging device, and optical sensor having low dark currents, and a method of manufacturing a photoelectric conversion element. Provided is a photoelectric conversion element, including: a first electrode; an organic photoelectric conversion layer disposed in a layer upper than the first electrode, the organic photoelectric conversion layer including one or two or more organic semiconductor materials; a buffer layer disposed in a layer upper than the organic photoelectric conversion layer, the buffer layer including an amorphous inorganic material and having an energy level of 7.7 to 8.0 eV and a difference in a HOMO energy level from the organic photoelectric conversion layer of 2 eV or more; and a second electrode disposed in a layer upper than the buffer layer.
    Type: Grant
    Filed: October 17, 2018
    Date of Patent: February 11, 2020
    Assignee: Sony Corporation
    Inventor: Toshiki Moriwaki
  • Patent number: 10483473
    Abstract: Disclosed herein is an electronic device including a first electrode 21, a second electrode 22, and a photoelectric conversion layer 23 held between the first electrode 21 and the second electrode 22. The first electrode 21 is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV, preferably from 5.5 to 5.9 eV, more preferably 5.8 to 5.9 eV.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: November 19, 2019
    Assignee: SONY CORPORATION
    Inventor: Toshiki Moriwaki
  • Publication number: 20190245102
    Abstract: An imaging element includes a first electrode, a second electrode, and a light receiving layer between the first electrode and the second electrode to receive incident light from the second electrode. The second electrode includes an indium-tin oxide layer which includes at least one of silicon or silicon oxide.
    Type: Application
    Filed: October 25, 2017
    Publication date: August 8, 2019
    Applicant: SONY CORPORATION
    Inventor: Toshiki MORIWAKI
  • Publication number: 20190172956
    Abstract: An imaging device is provided. The imaging device includes a semiconductor substrate; a first electrode disposed above the semiconductor substrate; a second electrode disposed above the first electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein a difference between a work function value of the first electrode and a work function value of the second electrode is 0.4 eV or more, and wherein the first electrode has a sheet resistance value of 3×10 ?/? to 1×103 ?/?.
    Type: Application
    Filed: January 23, 2019
    Publication date: June 6, 2019
    Inventors: Toshiki MORIWAKI, Toru UDAKA
  • Patent number: 10236396
    Abstract: There are provided an electronic device including a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the first electrode including an amorphous oxide composed of at least a quaternary compound of indium, gallium and/or aluminum, zinc and oxygen, and a difference between a work function value of the second electrode and a work function value of the first electrode being 0.4 eV or more; and a method of producing an electrode for the electronic device.
    Type: Grant
    Filed: April 9, 2014
    Date of Patent: March 19, 2019
    Assignee: Sony Corporation
    Inventors: Toshiki Moriwaki, Toru Udaka
  • Patent number: 10211145
    Abstract: An imaging element includes a layered structural body formed of a first electrode, a light receiving layer formed on the first electrode, and a second electrode formed on the light receiving layer, and a single first buffer layer formed of an amorphous organic material and a single second buffer layer formed of an amorphous inorganic material are provided between the light receiving layer and the second electrode from the light receiving layer side.
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: February 19, 2019
    Assignee: Sony Corporation
    Inventor: Toshiki Moriwaki
  • Publication number: 20190051848
    Abstract: To provide an organic photoelectric conversion element, imaging device, and optical sensor having low dark currents, and a method of manufacturing a photoelectric conversion element. Provided is a photoelectric conversion element, including: a first electrode; an organic photoelectric conversion layer disposed in a layer upper than the first electrode, the organic photoelectric conversion layer including one or two or more organic semiconductor materials; a buffer layer disposed in a layer upper than the organic photoelectric conversion layer, the buffer layer including an amorphous inorganic material and having an energy level of 7.7 to 8.0 eV and a difference in a HOMO energy level from the organic photoelectric conversion layer of 2 eV or more; and a second electrode disposed in a layer upper than the buffer layer.
    Type: Application
    Filed: October 17, 2018
    Publication date: February 14, 2019
    Applicant: SONY CORPORATION
    Inventor: Toshiki MORIWAKI