Abstract: An electronic device includes a first electrode 31, a light emitting/light receiving layer 20 formed on the first electrode 31, and a second electrode 32 formed on the light emitting/light receiving layer 20. The light emitting/light receiving layer 20 and/or the second electrode 32 is covered by an insulating layer 40 including a metal oxide that contains, as a main component, zinc oxide, while containing, as accessory components, at least two materials selected from the group consisting of aluminum oxide, magnesium oxide, niobium oxide, titanium oxide, molybdenum oxide and hafnium oxide.

Abstract: To provide an organic photoelectric conversion element, imaging device, and optical sensor having low dark currents, and a method of manufacturing a photoelectric conversion element. Provided is a photoelectric conversion element, including: a first electrode; an organic photoelectric conversion layer disposed in a layer upper than the first electrode, the organic photoelectric conversion layer including one or two or more organic semiconductor materials; a buffer layer disposed in a layer upper than the organic photoelectric conversion layer, the buffer layer including an amorphous inorganic material and having an energy level of 7.7 to 8.0 eV and a difference in a HOMO energy level from the organic photoelectric conversion layer of 2 eV or more; and a second electrode disposed in a layer upper than the buffer layer.

Abstract: An imaging element includes a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrode that are stacked, in which an inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer, and the inorganic oxide semiconductor material layer includes at least two types of elements selected from the group consisting of indium, tungsten, tin, and zinc. Alternatively, a LUMO value E1 of a material included in a part of the photoelectric conversion layer positioned near the inorganic oxide semiconductor material layer and a LUMO value E2 of a material included in the inorganic oxide semiconductor material layer satisfy E1?E2<0.2 eV. Alternatively, the mobility of a material included in the inorganic oxide semiconductor material layer is equal to or greater than 10 cm2/V·s.

Abstract: Disclosed herein is an electronic device including a first electrode 21, a second electrode 22, and a photoelectric conversion layer 23 held between the first electrode 21 and the second electrode 22. The first electrode 21 is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV, preferably from 5.5 to 5.9 eV, more preferably 5.8 to 5.9 eV.

Abstract: An imaging element has a laminated structure including a first electrode, a light-receiving layer formed on the first electrode, and a second electrode formed on the light-receiving layer. The second electrode is made of a transparent amorphous oxide having a conductive property.

Abstract: To provide an organic photoelectric conversion element, imaging device, and optical sensor having low dark currents, and a method of manufacturing a photoelectric conversion element. Provided is a photoelectric conversion element, including: a first electrode; an organic photoelectric conversion layer disposed in a layer upper than the first electrode, the organic photoelectric conversion layer including one or two or more organic semiconductor materials; a buffer layer disposed in a layer upper than the organic photoelectric conversion layer, the buffer layer including an amorphous inorganic material and having an energy level of 7.7 to 8.0 eV and a difference in a HOMO energy level from the organic photoelectric conversion layer of 2 eV or more; and a second electrode disposed in a layer upper than the buffer layer.

Abstract: Disclosed herein is an electronic device including a first electrode 21, a second electrode 22, and a photoelectric conversion layer 23 held between the first electrode 21 and the second electrode 22. The first electrode 21 is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV, preferably from 5.5 to 5.9 eV, more preferably 5.8 to 5.9 eV.

Abstract: An imaging element includes a first electrode, a second electrode, and a light receiving layer between the first electrode and the second electrode to receive incident light from the second electrode. The second electrode includes an indium-tin oxide layer which includes at least one of silicon or silicon oxide.

Abstract: An imaging device is provided. The imaging device includes a semiconductor substrate; a first electrode disposed above the semiconductor substrate; a second electrode disposed above the first electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein a difference between a work function value of the first electrode and a work function value of the second electrode is 0.4 eV or more, and wherein the first electrode has a sheet resistance value of 3×10 ?/? to 1×103 ?/?.

Abstract: There are provided an electronic device including a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the first electrode including an amorphous oxide composed of at least a quaternary compound of indium, gallium and/or aluminum, zinc and oxygen, and a difference between a work function value of the second electrode and a work function value of the first electrode being 0.4 eV or more; and a method of producing an electrode for the electronic device.

Abstract: An imaging element includes a layered structural body formed of a first electrode, a light receiving layer formed on the first electrode, and a second electrode formed on the light receiving layer, and a single first buffer layer formed of an amorphous organic material and a single second buffer layer formed of an amorphous inorganic material are provided between the light receiving layer and the second electrode from the light receiving layer side.

Abstract: To provide an organic photoelectric conversion element, imaging device, and optical sensor having low dark currents, and a method of manufacturing a photoelectric conversion element. Provided is a photoelectric conversion element, including: a first electrode; an organic photoelectric conversion layer disposed in a layer upper than the first electrode, the organic photoelectric conversion layer including one or two or more organic semiconductor materials; a buffer layer disposed in a layer upper than the organic photoelectric conversion layer, the buffer layer including an amorphous inorganic material and having an energy level of 7.7 to 8.0 eV and a difference in a HOMO energy level from the organic photoelectric conversion layer of 2 eV or more; and a second electrode disposed in a layer upper than the buffer layer.

Abstract: To provide an organic photoelectric conversion element, imaging device, and optical sensor having low dark currents, and a method of manufacturing a photoelectric conversion element. Provided is a photoelectric conversion element, including: a first electrode; an organic photoelectric conversion layer disposed in a layer upper than the first electrode, the organic photoelectric conversion layer including one or two or more organic semiconductor materials; a buffer layer disposed in a layer upper than the organic photoelectric conversion layer, the buffer layer including an amorphous inorganic material and having an energy level of 7.7 to 8.0 eV and a difference in a HOMO energy level from the organic photoelectric conversion layer of 2 eV or more; and a second electrode disposed in a layer upper than the buffer layer.

Abstract: Disclosed herein is an electronic device including a first electrode 21, a second electrode 22, and a photoelectric conversion layer 23 held between the first electrode 21 and the second electrode 22. The first electrode 21 is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV, preferably from 5.5 to 5.9 eV, more preferably 5.8 to 5.9 eV.

Abstract: An electronic device includes a first electrode 31, a light emitting/light receiving layer 20 formed on the first electrode 31, and a second electrode 32 formed on the light emitting/light receiving layer 20. The light emitting/light receiving layer 20 and/or the second electrode 32 is covered by an insulating layer 40 including a metal oxide that contains, as a main component, zinc oxide, while containing, as accessory components, at least two materials selected from the group consisting of aluminum oxide, magnesium oxide, niobium oxide, titanium oxide, molybdenum oxide and hafnium oxide.

Abstract: An imaging element has a laminated structure including a first electrode, a light-receiving layer formed on the first electrode, and a second electrode formed on the light-receiving layer. The second electrode is made of a transparent amorphous oxide having a conductive property.

Abstract: An imaging element has a laminated structure including a first electrode, a light-receiving layer formed on the first electrode, and a second electrode formed on the light-receiving layer. The second electrode is made of a transparent amorphous oxide having a conductive property.

Abstract: An imaging element includes a layered structural body formed of a first electrode, a light receiving layer formed on the first electrode, and a second electrode formed on the light receiving layer, and a single first buffer layer formed of an amorphous organic material and a single second buffer layer formed of an amorphous inorganic material are provided between the light receiving layer and the second electrode from the light receiving layer side.

Abstract: An imaging element has a laminated structure including a first electrode, a light-receiving layer formed on the first electrode, and a second electrode formed on the light-receiving layer. The second electrode is made of a transparent amorphous oxide having a conductive property.

Abstract: To provide an organic photoelectric conversion element, imaging device, and optical sensor having low dark currents, and a method of manufacturing a photoelectric conversion element. Provided is a photoelectric conversion element, including: a first electrode; an organic photoelectric conversion layer disposed in a layer upper than the first electrode, the organic photoelectric conversion layer including one or two or more organic semiconductor materials; a buffer layer disposed in a layer upper than the organic photoelectric conversion layer, the buffer layer including an amorphous inorganic material and having an energy level of 7.7 to 8.0 eV and a difference in a HOMO energy level from the organic photoelectric conversion layer of 2 eV or more; and a second electrode disposed in a layer upper than the buffer layer.