Patents by Inventor Toshimi Nakamura

Toshimi Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190335594
    Abstract: Provided is a method of manufacturing a multilayer wiring board, in which electrical inspection can be performed with accurate probing while warpage of a multilayer laminate is reduced. This method includes providing a laminated sheet including a first support, a first release layer and a metal layer; alternately stacking wiring layers and insulating layers on a surface of the metal layer, wherein an n-th wiring layer being the uppermost layer includes an n-th connection pad; bonding a second support having an opening on a surface, remote from the laminated sheet, of the multilayer laminate with a second release layer therebetween such that at least a part of the n-th connection pad is disposed within the opening; releasing the first support from the reinforced multilayer laminate at the first release layer; and putting conductors into contact with the n-th connection pads of the reinforced multilayer laminate to perform electrical inspection.
    Type: Application
    Filed: December 22, 2016
    Publication date: October 31, 2019
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Yoshinori MATSUURA, Yasuhiro SETO, Toshimi NAKAMURA
  • Publication number: 20190292415
    Abstract: Provided is an adhesive sheet including a substrate sheet and a soluble adhesive layer with an island or stripe pattern disposed on at least one surface of the substrate sheet, wherein each adhesive region has a circumscribed circle diameter of 0.1 mm to 10 mm for the island pattern, or has a stripe width of 0.1 mm to 10 mm for the stripe pattern. This adhesive sheet can retain an adhesive force of the adhesive layer until just before releasing and can be readily released from the adherend at any time without applying of excessive stress to the adherend.
    Type: Application
    Filed: November 24, 2017
    Publication date: September 26, 2019
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Tetsuro SATO, Toshimi NAKAMURA
  • Patent number: 10283728
    Abstract: There is provided a high gloss electrodeposited copper foil which can be manufactured in a short time. The electrodeposited copper foil has a fraction of the areas occupied by the {100} plane deviating by 18° or less from the <001> crystal orientation of 10% or more determined by analysis of the surface by electron backscatter diffraction (EBSD) and at least one surface of the electrodeposited copper foil has a glossiness Gs (20°) of 1,500 or more, determined in accordance with JIS Z 8741-1997.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: May 7, 2019
    Assignee: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Yoshinori Matsuura, Toshimi Nakamura, Masaharu Myoi, Hajime Watanabe
  • Patent number: 9786404
    Abstract: There is provided a metal foil suitable for an electrode substrate for an electronic element, which makes it possible to suppress oxidation of the ultra-smooth surface and also prevent roll scratches when wound in a roll. The metal foil of the present invention is made of copper or copper alloy. The front surface of the metal foil has an ultra-smooth surface profile having an arithmetic mean roughness Ra of 30 nm or less as determined in accordance with JIS B 0601-2001. The back surface of the metal has a concave-dominant surface profile having a Pv/Pp ratio of 1.5 or more, the Pv/Pp ratio being a ratio of a maximum profile valley depth Pv to a maximum profile peak height Pp of a profile curve as determined in a rectangular area of 181 ?m by 136 ?m in accordance with JIS B 0601-2001.
    Type: Grant
    Filed: April 24, 2013
    Date of Patent: October 10, 2017
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Yoshinori Matsuura, Nozomu Kitajima, Toshimi Nakamura, Masaharu Myoi
  • Patent number: 9508951
    Abstract: There is provided an electrode foil that can form an organic electroluminescent device having a high external quantum efficiency despite the presence of the organic nitrogen compound at the interface of a metal foil and a reflective layer. The electrode foil of the invention includes a metal foil made of copper or copper alloy and a reflective layer provided on at least one surface of the metal foil. The electrode foil has an organic nitrogen compound at the interface between the metal foil and the reflective layer in such an amount that the ratio of the number of counts on the C—N bond to the total number of counts on the copper and the C—N bond: CN/(CN+Cu) in the organic nitrogen compound is 0.4 or less determined by time-of-flight secondary ion mass spectrometric analysis (TOF-SIMS) of the interface.
    Type: Grant
    Filed: June 7, 2013
    Date of Patent: November 29, 2016
    Assignees: Mitsui Mining & Smelting Co., Ltd., Panasonic Corporation
    Inventors: Yoshinori Matsuura, Toshimi Nakamura, Masaharu Myoi, Nozomu Kitajima, Mitsuo Yaguchi
  • Publication number: 20160285030
    Abstract: There is provided a high gloss electrodeposited copper foil which can be manufactured in a short time.
    Type: Application
    Filed: June 4, 2014
    Publication date: September 29, 2016
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Yoshinori MATSUURA, Toshimi NAKAMURA, Masaharu MYOI, Hajime WATANABE
  • Publication number: 20150207096
    Abstract: There is provided an electrode foil that can form an organic electroluminescent device having a high external quantum efficiency despite the presence of the organic nitrogen compound at the interface of a metal foil and a reflective layer. The electrode foil of the invention includes a metal foil made of copper or copper alloy and a reflective layer provided on at least one surface of the metal foil. The electrode foil has an organic nitrogen compound at the interface between the metal foil and the reflective layer in such an amount that the ratio of the number of counts on the C—N bond to the total number of counts on the copper and the C—N bond: CN/(CN+Cu) in the organic nitrogen compound is 0.4 or less determined by time-of-flight secondary ion mass spectrometric analysis (TOF-SIMS) of the interface.
    Type: Application
    Filed: June 7, 2013
    Publication date: July 23, 2015
    Inventors: Yoshinori Matsuura, Toshimi Nakamura, Masaharu Myoi, Nozomu Kitajima, Mitsuo Yaguchi
  • Publication number: 20150194232
    Abstract: There is provided a metal foil suitable for an electrode substrate for an electronic element, which makes it possible to suppress oxidation of the ultra-smooth surface and also prevent roll scratches when wound in a roll. The metal foil of the present invention is made of copper or copper alloy. The front surface of the metal foil has an ultra-smooth surface profile having an arithmetic mean roughness Ra of 30 nm or less as determined in accordance with JIS B 0601-2001. The back surface of the metal has a concave-dominant surface profile having a Pv/Pp ratio of 1.5 or more, the Pv/Pp ratio being a ratio of a maximum profile valley depth Pv to a maximum profile peak height Pp of a profile curve as determined in a rectangular area of 181 ?m by 136 ?m in accordance with JIS B 0601-2001.
    Type: Application
    Filed: April 24, 2013
    Publication date: July 9, 2015
    Inventors: Yoshinori Matsuura, Nozomu Kitajima, Toshimi Nakamura, Masaharu Myoi
  • Patent number: 9029885
    Abstract: There is provided an electrode foil, which can show superior light scattering, while preventing short circuit between electrodes. The electrode foil of the present invention comprises a metal foil having a thickness of from 1 ?m to 250 ?m, wherein the electrode foil comprises, on at least one outermost surface thereof, a light-scattering surface having a Pv/Pp ratio of 2.0 or higher, wherein the Pv/Pp ratio is a ratio of a maximum profile valley depth Pv of a profile curve to a maximum profile peak height Pp of the profile curve as measured in a rectangular area of 181 ?m×136 ?m in accordance with JIS B 0601-2001.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: May 12, 2015
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Yoshinori Matsuura, Nozomu Kitajima, Toshimi Nakamura, Masaharu Myoi
  • Publication number: 20150001519
    Abstract: An electrode foil functioning as both a supporting substrate and an electrode and suitable for low-cost high-efficiency production of flexible electronic devices having functionality on their both sides is provided. An electrode foil of the present invention comprises a metal foil, wherein the metal foil has a thickness of 1 to 250 ?m, and wherein the outermost surfaces on both sides of the electrode foil are ultra-smooth surfaces each having an arithmetic mean roughness Ra of 30.0 nm or less as determined in accordance with JIS B 0601-2001.
    Type: Application
    Filed: July 27, 2012
    Publication date: January 1, 2015
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Yoshinori Matsuura, Nozomu Kitajima, Toshimi Nakamura, Masaharu Myoi
  • Publication number: 20140061701
    Abstract: There is provided an electrode foil, which can show superior light scattering, while preventing short circuit between electrodes. The electrode foil of the present invention comprises a metal foil having a thickness of from 1 ?m to 250 ?m, wherein the electrode foil comprises, on at least one outermost surface thereof, a light-scattering surface having a Pv/Pp ratio of 2.0 or higher, wherein the Pv/Pp ratio is a ratio of a maximum profile valley depth Pv of a profile curve to a maximum profile peak height Pp of the profile curve as measured in a rectangular area of 181 ?m×136 ?m in accordance with JIS B 0601-2001.
    Type: Application
    Filed: December 26, 2012
    Publication date: March 6, 2014
    Applicant: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Yoshinori Matsuura, Nozomu Kitajima, Toshimi Nakamura, Masaharu Myoi
  • Patent number: 8384197
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate, an inter-layer insulating film, a wiring, and a via. The inter-layer insulating film is provided on the semiconductor substrate. The wiring is provided in the inter-layer insulating film. The via is provided in the inter-layer insulating film. Inside the inter-layer insulating film in a circumferential region around a device region, a vertical structure body is formed in which the wiring and the via are vertically connected. At least in an upper portion inside the inter-layer insulating film in an edge region located around the circumferential region and constituting an outer edge portion, no vertical structure body is formed in which the wiring and the via are vertically connected.
    Type: Grant
    Filed: March 21, 2011
    Date of Patent: February 26, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Toshimi Nakamura
  • Publication number: 20110272768
    Abstract: Provided is a lead frame, an electronic device provided with a lead frame, a method of producing a lead frame, and a method of producing an electronic device provided with a lead frame that has been produced by the method of producing a lead frame, in which a lead frame is not corroded, a mechanical strength of the lead frame is not lowered, it is not necessary to carry out the conventional plating processing steps composed of two stages, the processes are simple, a cost is lower, and a large amount of waste liquid such as plating processing liquid is not generated, thereby preventing an environment from being affected. The lead frame includes an outer lead part and an inner lead part, and plating is carried out on at least a part of one or both of the outer lead part or the inner lead part.
    Type: Application
    Filed: September 12, 2008
    Publication date: November 10, 2011
    Applicants: SUN-A CORPORATION, MITSUI MINING & SMELTING CO., LTD.
    Inventors: Toshimi Nakamura, Toshiaki Kawanishi, Toshihiro Hosoi, Kenjiro Izutani, Hiroyuki Nakamura, Yutaka Osawa, Hiroaki Sunada, Tetsuyasu Takahashi
  • Publication number: 20110241164
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate, an inter-layer insulating film, a wiring, and a via. The inter-layer insulating film is provided on the semiconductor substrate. The wiring is provided in the inter-layer insulating film. The via is provided in the inter-layer insulating film. Inside the inter-layer insulating film in a circumferential region around a device region, a vertical structure body is formed in which the wiring and the via are vertically connected. At least in an upper portion inside the inter-layer insulating film in an edge region located around the circumferential region and constituting an outer edge portion, no vertical structure body is formed in which the wiring and the via are vertically connected.
    Type: Application
    Filed: March 21, 2011
    Publication date: October 6, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventor: Toshimi Nakamura
  • Publication number: 20100212400
    Abstract: Provided is a detection unit mold package (2A), which is equipped with plate-shaped protrusions (21P and 22P) to contact an object liquid so as to exchange the heat with the object liquid. The plate-shaped protrusions (21P and 22P) are formed by sealing a liquid-kind detecting unit (21a) and a liquid-temperature detecting unit (22a), which are made of thin-film chips containing at least temperature-sensitive elements, and metallic die pads (21c and 22c) having those detecting units joined thereto, with a sealing material (23), so that they may not be exposed to the surface. The plate-shaped protrusions (21P and 22P) have their two principal planes in parallel with the metallic die pads (21c and 22c).
    Type: Application
    Filed: May 8, 2008
    Publication date: August 26, 2010
    Inventor: Toshimi Nakamura
  • Patent number: 7618593
    Abstract: On an upper surface of a container body, there are disposed at least a base portion of a concentration meter configured to detect the concentration of a liquid reducing agent based on a heat transmission characteristic between two spaced points, and a heat exchanger configured to permit the engine coolant to circulate therein and arranged to surround a detecting section of the concentration meter, which hangs from the base portion of the concentration meter via a supporting column thereof, to thereby perform the heat exchange with the liquid reducing agent, and also, a protector or an encasing element of substantially box shape is arranged to surround a lower portion of the heat exchanger and the detecting section of the concentration meter, and further, a visor is attached on the supporting column of the concentration meter, which is positioned above the protector by a predetermined interval.
    Type: Grant
    Filed: April 27, 2007
    Date of Patent: November 17, 2009
    Assignees: Nissan Diesel Motor Co., Ltd., Mitsui Mining & Smelting Co., Ltd.
    Inventors: Mitsuhiro Nishina, Hideki Matsunaga, Shinichi Inoue, Toshimi Nakamura
  • Patent number: 7574897
    Abstract: A device for detecting leakage of liquid in a tank, capable of detecting the leakage at high accuracy and sensitivity for a wide range of a leakage quantity. A flow rate sensor section attached to a measurement fine tube (13b) includes temperature sensors (133, 134) and an indirectly heated sensor (135). A leakage detection control section connected to a pressure sensor (137) for measuring a liquid level and to the flow rate sensor section has a voltage generation circuit (67) for applying a voltage to a heater (163) of the indirectly heated sensor, a first leakage detection circuit (71), and a second leakage detection circuit for generating an output corresponding to temperature sensed by the indirectly heated sensor (135).
    Type: Grant
    Filed: November 21, 2005
    Date of Patent: August 18, 2009
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Atsushi Koike, Toshimi Nakamura, Tsutomu Makino
  • Patent number: 7536900
    Abstract: A leak detecting system includes a leak detector that detects leakage of liquid stored in a tank based on fluctuation in a level of the liquid. The leak detector includes a liquid inlet/outlet portion through which the liquid in the tank flows in and out, a flow-rate measuring unit configured to measure an amount of flow of the liquid inside the leak detector, and a liquid retaining portion configured to retain liquid flowing therein through the liquid inlet/outlet portion. A lower end of the leak detector is detachably attached to a bottom plate of the tank, and an upper end of the leak detector is supported in a gauging port in a top plate in such a manner that the leak detector is movable in a vertical direction.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: May 26, 2009
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Toshimi Nakamura, Kiyoshi Yamagishi, Atsushi Koike, Kiyotaka Yanagi
  • Patent number: D631942
    Type: Grant
    Filed: August 6, 2008
    Date of Patent: February 1, 2011
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Atsushi Koike, Toshimi Nakamura, Kenjiro Izutani
  • Patent number: D631943
    Type: Grant
    Filed: August 6, 2008
    Date of Patent: February 1, 2011
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Atsushi Koike, Toshimi Nakamura, Kenjiro Izutani