Patents by Inventor Toshimitsu Konuma
Toshimitsu Konuma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8853696Abstract: An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Morever, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.Type: GrantFiled: May 26, 2000Date of Patent: October 7, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Kunitaka Yamamoto, Toshimitsu Konuma
-
Publication number: 20140252361Abstract: A plurality of pixels are arranged on the substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter having a second color are provided. The second color is different from the first color.Type: ApplicationFiled: May 23, 2014Publication date: September 11, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mayumi MIZUKAMI, Toshimitsu KONUMA
-
Publication number: 20140252337Abstract: Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.Type: ApplicationFiled: May 22, 2014Publication date: September 11, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshimitsu Konuma, Junya Maruyama
-
Publication number: 20140221597Abstract: By repeating a purification process of a light-emitting organic compound several times, a thin film made of the light-emitting organic compound to be used in an EL display device contains ionic impurities at the concentration of 0.1 ppm or lower and has a volume resistivity in the range of 3×1010 ?cm or larger. By using such a thin film as a light-emitting layer in the EL device, a current caused by reasons other than the carrier recombination can be prevented from flowing through the thin film, and deterioration caused by unnecessary heat generation can be suppressed. Accordingly, it is possible to obtain an EL display device with high reliability.Type: ApplicationFiled: April 10, 2014Publication date: August 7, 2014Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Toshimitsu KONUMA, Mayumi MIZUKAMI
-
Publication number: 20140203286Abstract: An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film 45 is disposed so as to be in contact with an EL element 203 which comprises a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, to make a structure in which heat generated by the EL element 203 is radiated. Further, the third passivation film 45 prevents alkali metals within the EL element 203 from diffusing into the TFTs side, and prevents moisture and oxygen of the TFTs side from penetrating into the EL element 203. More preferably, heat radiating effect is given to a fourth passivation film 50 to make the EL element 203 to be enclosed by heat radiating layers.Type: ApplicationFiled: March 14, 2014Publication date: July 24, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Kunitaka Yamamoto, Toshimitsu Konuma
-
Patent number: 8735898Abstract: Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.Type: GrantFiled: April 14, 2012Date of Patent: May 27, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshimitsu Konuma, Junya Maruyama
-
Patent number: 8735900Abstract: A plurality of pixels are arranged on the substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter having a second color are provided. The second color is different from the first color.Type: GrantFiled: May 22, 2013Date of Patent: May 27, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mayumi Mizutami, Toshimitsu Konuma
-
Patent number: 8698389Abstract: By repeating a purification process of a light-emitting organic compound several times, a thin film made of the light-emitting organic compound to be used in an EL display device contains ionic impurities at the concentration of 0.1 ppm or lower and has a volume resistivity in the range of 3×1010 ?cm or larger. By using such a thin film as a light-emitting layer in the EL device, a current caused by reasons other than the carrier recombination can be prevented from flowing through the thin film, and deterioration caused by unnecessary heat generation can be suppressed. Accordingly, it is possible to obtain an EL display device with high reliability.Type: GrantFiled: November 1, 2011Date of Patent: April 15, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Mayumi Mizukami
-
Patent number: 8674600Abstract: An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film 45 is disposed so as to be in contact with an EL element 203 which comprises a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, to make a structure in which heat generated by the EL element 203 is radiated. Further, the third passivation film 45 prevents alkali metals within the EL element 203 from diffusing into the TFTs side, and prevents moisture and oxygen of the TFTs side from penetrating into the EL element 203. More preferably, heat radiating effect is given to a fourth passivation film 50 to make the EL element 203 to be enclosed by heat radiating layers.Type: GrantFiled: April 12, 2013Date of Patent: March 18, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyoma, Kunitaka Yamamoto, Toshimitsu Konuma
-
Patent number: 8648345Abstract: There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET (201) and an electric current controlling FET (202) are formed on a single crystal semiconductor substrate (11), and an EL element (203) is electrically connected to the electric current controlling FET (202). The fluctuation in characteristics of the electric current controlling FET (202) is very low among pixels, and an image with high color reproducibility can be obtained. By taking hot carrier measures in the electric current controlling FET (202), the electronic device having high reliability can be obtained.Type: GrantFiled: September 12, 2011Date of Patent: February 11, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Jun Koyama, Kazutaka Inukai, Mayumi Mizukami
-
Publication number: 20140014963Abstract: An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Morever, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.Type: ApplicationFiled: September 20, 2013Publication date: January 16, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei YAMAZAKI, Jun Koyama, Kunitaka Yamamoto, Toshimitsu Konuma
-
Publication number: 20130313558Abstract: A plurality of pixels are arranged on the substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter having a second color are provided. The second color is different from the first color.Type: ApplicationFiled: May 22, 2013Publication date: November 28, 2013Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei YAMAZAKI, Mayumi MIZUTAMI, Toshimitsu KONUMA
-
Patent number: 8563333Abstract: There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impurity, which are included in the EL material. Also, when film formation is performed using the EL material (high purity EL material) obtained by purifying with sublimation as an evaporation source, a high purity EL layer can be formed.Type: GrantFiled: September 13, 2012Date of Patent: October 22, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Takeshi Nishi
-
Patent number: 8450745Abstract: A plurality of pixels are arranged on the substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter having a second color are provided. The second color is different from the first color.Type: GrantFiled: May 18, 2012Date of Patent: May 28, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mayumi Mizukami, Toshimitsu Konuma
-
Patent number: 8421350Abstract: An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film 45 is disposed under an EL element 203 which comprises a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, to make a structure in which heat generated by the EL element 203 is radiated. Further, the third passivation film 45 prevents alkali metals within the EL element 203 from diffusing into the TFTs side, and prevents moisture and oxygen of the TFTs side from penetrating into the EL element 203. More preferably, heat radiating effect is given to a fourth passivation film 50 to make the EL element 203 to be enclosed by heat radiating layers.Type: GrantFiled: June 9, 2012Date of Patent: April 16, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Kunitaka Yamamoto, Toshimitsu Konuma
-
Patent number: 8396690Abstract: A method for manufacturing a liquid crystal device including the steps of: disposing a mixture including a liquid crystal material and a curable resin containing a reaction initiating agent between a pair of substrates wherein at least one of the pair of substrates has an orientation film in contact with the mixture; orienting the liquid crystal material; and curing the resin in the mixture so that the resin is formed on a surface of the orientation film. The resin may be in the form of a film or grains. Also, the resin may be cured by ultraviolet light.Type: GrantFiled: July 9, 2009Date of Patent: March 12, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshimitsu Konuma, Takeshi Nishi, Michio Shimizu, Harumi Mori, Kouji Moriya, Satoshi Murakami
-
Publication number: 20130005054Abstract: There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impurity, which are included in the EL material. Also, when film formation is performed using the EL material (high purity EL material) obtained by purifying with sublimation as an evaporation source, a high purity EL layer can be formed.Type: ApplicationFiled: September 13, 2012Publication date: January 3, 2013Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Takeshi Nishi
-
Publication number: 20120299471Abstract: An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Moreover, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.Type: ApplicationFiled: August 2, 2012Publication date: November 29, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Jun KOYAMA, Kunitaka YAMAMOTO, Toshimitsu KONUMA
-
Publication number: 20120286283Abstract: Plurality of pixels (102) are arranged on the substrate. Each of the pixels (102) is provided with an EL element which utilizes as a cathode a pixel electrode (105) connected to a current control TFT (104). On a counter substrate (110), a light shielding film (112) is disposed at the position corresponding to periphery of each pixel (102), while a color filter (113) is disposed at the position corresponding to each of the pixels (102). This light shielding film makes the contour of the pixels clear, resulting in an image display with high definition. In addition, it is possible to fabricate the EL display device of the present invention with most of an existing manufacturing line for liquid crystal display devices. Thus, an amount of equipment investment can be significantly reduced, thereby resulting in a reduction in the total manufacturing cost.Type: ApplicationFiled: May 18, 2012Publication date: November 15, 2012Inventors: Shunpei Yamazaki, Mayumi Mizukami, Toshimitsu Konuma
-
Publication number: 20120248453Abstract: An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film 45 is disposed under an EL element 203 which comprises a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, to make a structure in which heat generated by the EL element 203 is radiated. Further, the third passivation film 45 prevents alkali metals within the EL element 203 from diffusing into the TFTs side, and prevents moisture and oxygen of the TFTs side from penetrating into the EL element 203. More preferably, heat radiating effect is given to a fourth passivation film 50 to make the EL element 203 to be enclosed by heat radiating layers.Type: ApplicationFiled: June 9, 2012Publication date: October 4, 2012Inventors: Shunpei Yamazaki, Jun Koyama, Kunitaka Yamamoto, Toshimitsu Konuma