Abstract: A transfer substrate for transferring a metal wiring material to a transfer target including a substrate, at least one metal wiring material formed on the substrate, at least one coating layer formed on a surface of the metal wiring material, and an underlying metal film formed between the substrate and the metal wiring material, in which the metal wiring material is a compact formed by sintering metal powder such as gold powder having a purity of 99.9 wt % or more and an average particle size of 0.01 ?m to 1.0 ?m, and the coating layer is a predetermined metal such as gold or an alloy having a different composition from that of the metal wiring material and has a total thickness of 1 ?m or less, and the metal underlying film is made of a predetermined metal such as gold or an alloy. The transfer substrate can lower heating temperature on the transfer target side.

Abstract: The present invention is a metal paste for sealing comprising a metal powder and an organic solvent characterized in that the metal powder is one or more kinds of metal powders selected from a gold powder, a silver powder, a platinum powder and a palladium powder which has a purity of 99.9% by weight or more and an average particle size of 0.1 ?m to 1.0 ?m and that the metal powder is contained in a ratio of 85 to 93% by weight and the organic solvent is contained in a ratio of 5 to 15% by weight. As a sealing method using this metal paste, there is a method of applying and drying a metal paste, sintering it at 80 to 300° C. to form a metal powder sintered body and after that pressurizing the base member and the cap member while heating the metal powder sintered body.

Abstract: The present invention is a metal paste for sealing comprising a metal powder and an organic solvent characterized in that the metal powder is one or more kinds of metal powders selected from a gold powder, a silver powder, a platinum powder and a palladium powder which has a purity of 99.9% by weight or more and an average particle size of 0.1 ?m to 1.0 ?m and that the metal powder is contained in a ratio of 85 to 93% by weight and the organic solvent is contained in a ratio of 5 to 15% by weight. This metal paste preferably contains an additive such as a surfactant in accordance with the application method. As a sealing method using this metal paste, there is a method of applying and drying a metal paste, sintering it at 80 to 300° C. to form a metal powder sintered body and after that pressurizing the base member and the cap member while heating the metal powder sintered body.

Abstract: The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 ?m to 1.0 ?m and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300° C.

Abstract: A two-layer structure bump including a first bump layer of a bulk body of a first conductive metal, which is any of gold, copper, and nickel, formed on a substrate and a second bump layer of a sintered body of a powder of a second conductive metal, which is any of gold and silver, formed on the first bump layer. The bulk body composing the first bump layer is formed through any of plating, sputtering, or CVD. The sintered body composing the second bump layer is formed by sintering the powder of the second conductive metal having a purity of not lower than 99.9 wt % and an average particle diameter of 0.005 ?m to 1.0 ?m. The second bump layer has a Young's modulus 0.1 to 0.4 times that of the first bump layer.

Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.

Abstract: An electrode material capable of making more satisfactory the dispersion at the time of production and the aging property of a resonator than Au and capable of reducing the price as compared to Au. An resonator electrode material including a ternary alloy composed of Au and two metals M1 and M2, and being used as an excitation electrode to excite oscillation in a piezoelectric element, wherein the two metals M1 and M2 are, respectively, (a) metal M1: a metal exhibiting a tendency to decrease the temporal frequency property (?f1/f1) from the reference value f1, and (b) metal M2: a metal exhibiting a tendency to increase the temporal frequency property (?f1/f1) from the reference value f1. The metal M1 is preferably at least any one of Ag, Al and Ni, and the metal M2 is preferably at least any one of Pd, Ru, Pt, Ir, Rh and Cu.

Abstract: The present invention is a metal paste for sealing comprising a metal powder and an organic solvent characterized in that the metal powder is one or more kinds of metal powders selected from a gold powder, a silver powder, a platinum powder and a palladium powder which has a purity of 99.9% by weight or more and an average particle size of 0.1 ?m to 1.0 ?m and that the metal powder is contained in a ratio of 85 to 93% by weight and the organic solvent is contained in a ratio of 5 to 15% by weight. As a sealing method using this metal paste, there is a method of applying and drying a metal paste, sintering it at 80 to 300° C. to form a metal powder sintered body and after that pressurizing the base member and the cap member while heating the metal powder sintered body.

Abstract: A two-layer structure bump including a first bump layer of a bulk body of a first conductive metal, which is any of gold, copper, and nickel, formed on a substrate and a second bump layer of a sintered body of a powder of a second conductive metal, which is any of gold and silver, formed on the first bump layer. The bulk body composing the first bump layer is formed through any of plating, sputtering, or CVD. The sintered body composing the second bump layer is formed by sintering the powder of the second conductive metal having a purity of not lower than 99.9 wt % and an average particle diameter of 0.005 ?m to 1.0 ?m. The second bump layer has a Young's modulus 0.1 to 0.4 times that of the first bump layer.

Abstract: The present invention provides a bonding method in which a bonded portion having a sufficient bonding strength can be obtained at a relatively low temperature, for example, in die bonding a semiconductor chip. A metal paste 20 was applied to a semiconductor chip 10, the metal paste 20 consisting of metal powder of one or more kinds selected from gold powder, silver powder, platinum powder, and palladium powder having a purity not lower than 99.9 wt % and an average particle diameter of 0.005 ?m to 1.0 ?m and an organic solvent. After being applied, the metal paste 20 was dried in a vacuum in a dryer. The chip was heated at 230° C. for 30 minutes to sinter the metal paste, by which a metal powder sintered compact 21 was formed. Next, a nickel plate 30 was placed on the semiconductor chip 10, and bonded to the semiconductor chip 10 by heating and pressurization.

Abstract: The present invention is a metal paste for sealing comprising a metal powder and an organic solvent characterized in that the metal powder is one or more kinds of metal powders selected from a gold powder, a silver powder, a platinum powder and a palladium powder which has a purity of 99.9% by weight or more and an average particle size of 0.1 ?m to 1.0 ?m and that the metal powder is contained in a ratio of 85 to 93% by weight and the organic solvent is contained in a ratio of 5 to 15% by weight. This metal paste preferably contains an additive such as a surfactant in accordance with the application method. As a sealing method using this metal paste, there is a method of applying and drying a metal paste, sintering it at 80 to 300° C. to form a metal powder sintered body and after that pressurizing the base member and the cap member while heating the metal powder sintered body.

Abstract: The present invention provides a bonding method in which a bonded portion having a sufficient bonding strength can be obtained at a relatively low temperature, for example, in die bonding a semiconductor chip. A metal paste 20 was applied to a semiconductor chip 10, the metal paste 20 consisting of metal powder of one or more kinds selected from gold powder, silver powder, platinum powder, and palladium powder having a purity not lower than 99.9 wt % and an average particle diameter of 0.005 ?m to 1.0 ?m and an organic solvent. After being applied, the metal paste 20 was dried in a vacuum in a dryer. The chip was heated at 230° C. for 30 minutes to sinter the metal paste, by which a metal powder sintered compact 21 was formed. Next, a nickel plate 30 was placed on the semiconductor chip 10, and bonded to the semiconductor chip 10 by heating and pressurization.

Abstract: This invention provides a lead-free high temperature solder material comprising 0.005-3.0 wt % of palladium (Pd) and 97.0-99.995 wt % of tin (Sn) whose liquidus temperature is 200-350° C. The solder material is environmentally-friendly, improved in thermal fatigue property, and it can improve the reliability of electronic apparatuses. A predetermined amount of Sn material and Pd is mixed, vacuum-melted and cast to prepare an ingot. The ingot is rolled to be a tape that is later pressed to obtain a solder pellet. In a preferable composition, at least 95 wt % of Sn and 0.005-3.0 wt 5 of Pd are contained, and 0.1-5.0 wt % of metallic (e.g. Cu, Ni) or alloy particles are added. The average particle diameter is about 40 &mgr;m. A substrate and an IC chip (electronic element) are die-bonded substantially in parallel by a solder material provided between an Ni plating on the lower side of an IC chip (semiconductor) and an Ni plating on a die.

Abstract: An object of this invention is to provide a solder material capable of, when joining an electronic component to a substrate with the solder material, improving heat fatigue resistance thereof and reducing damage of Ni film interposed therebetween. A solution of this invention is to assemble an electronic part by soldering a semiconductor device with a substrate using solder balls made of a solder material containing from 0.01 to 4.99% by weight of Fe; from 0.01 to 4.99% by weight of Ni, total thereof being from 0.02 to 5.0% by weight; from 0.1 to 8.0% by weight of at least one of Ag and In; from 0 to 70% by weight of Pb, balance containing Sn and unavoidable impurity.

Abstract: A method of electrically connecting a semiconductor package to a substrate by using bump contacts formed by heating the tip of an alloy wire and directly joined to aluminum alloy wiring lines, an alloy wire for such a purpose, and a semiconductor device constructed by electrically connecting a semiconductor package to a substrate by such a method. The alloy wire is produced by drawing an alloy material produced by quench solidifying an alloy containing Pb, Sn or In as a principal element, and an additive element or additive elements. The tip of the alloy wire is heated to form a ball to be joined to the aluminum alloy wiring line as a bump contact. The Brinell hardness number of the ball is H.sub.B 6 or higher.

Abstract: This invention relates to a connection method for a semiconductor material enabling a formation of a bump electrode with a wire bonder, keeping always a cutting position of the wire at a specified position and improving a continuous workability and stability and to a connection material to be used in the connecting method, wherein any one of Pb, Sn, In is applied as a major element and the alloy having additive elements mixed with it is made as a fine wire under a rapid cooling and condensation process and further to a semiconductor device made by the above-mentioned connecting method.

Abstract: This invention relates to a connection method for a semiconductor material enabling a formation of a bump electrode with a wire bonder, keeping always a cutting position of the wire at a specified position and improving a continuous workability and stability and to a connection material to be used in the connecting method, wherein any one of Pb, Sn, In is applied as a major element and the alloy having additive elements mixed with it is made as a fine wire under a rapid cooling and condensation process and further to a semiconductor device made by the above-mentioned connecting method.

Abstract: This invention relates to a connection method for a semiconductor material enabling a formation of a bump electrode with a wire bonder, keeping always a cutting position of the wire at a specified position and improving a continuous workability and stability and to a connection material to be used in the connecting method, wherein any one of Pb, Sn, In is applied as a major element and the alloy having additive elements mixed with it is made as a fine wire under a rapid cooling and condensation process and further to a semiconductor device made by the above-mentioned connecting method.

Abstract: A method of electrically connecting a semiconductor package to a substrate by using bump contacts formed by heating the tip of an alloy wire and directly joined to aluminum alloy wiring lines, an alloy wire for such a purpose, and a semiconductor device constructed by electrically connecting a semiconductor package to a substrate by such a method. The alloy wire is produced by drawing an alloy material produced by quench solidifying an alloy containing Pb, Sn or In as a principal element, and an additive element or additives elements. The tip of the alloy wire is heated to form a ball to be joined to the aluminum alloy wiring line as a bump contact. The Brinell hardness number of the ball is H.sub.B 6 or higher.