Abstract: An iron silicide thermoelectric conversion element wherein a part of one of components of the silicide is substituted by oxygen atom to form either Si-O bond or Fe-O bond in a matrix of the compound to provide either p-type conductivity or n-type conductivity as desired.

Abstract: A beryllium oxide (BeO) film is disclosed, which is produced by impinging partially ionized vapor of metal beryllium and oxygen upon a substrate.

Abstract: The disclosed thermoelectric converter element includes at least one member made of thermoelectric substance whose crystal structure is so controlled that its crystallographic axis is directed to a preferred orientation which is different from the direction of a thermoelectric current therethrough.

Abstract: A magnetic recording medium comprising(a) a flexible substrate of a polymeric material,(b) a first magnetic layer of a ferromagnetic metal deposited on the substrate by an ionized cluster beam deposition method, and(c) a second magnetic layer of a ferromagnetic metal deposited on the first magnetic layer by a high-vacuum ion plating deposition method, and a process for producing a magnetic recording medium which comprisesimparting a kinetic energy in the range of 100 eV to 10 KeV to an ionized cluster composed of ferromagnetic metal atoms in a high vacuum corresponding to a pressure of 8.times.10.sup.-4 to 1.times.10.sup.-10 torr and impinging the resulting ionized cluster beam against a flexible substrate of a polymeric material to deposit a first magnetic layer of the ferromagnetic metal on the substrate, andimparting a kinetic energy in the range of 1 eV to 10 KeV to atom ions of a ferromagnetic metal by an ion plating method in a high vacuum corresponding to a pressure of 8.times.10.sup.-4 to 1.times.10.

Abstract: There is disclosed a process for forming a lead film by a cluster ion beam deposition which includes the step of impinging ionized and non-ionized neutral clusters having 100 to 2,000 atoms of vapor of lead loosely coupled by Van der Walls force upon a substrate within a vacuum chamber which is kept at about 10.sup.-2 Torr or less thereby forming the lead film thereon.

Abstract: A magnetic recording medium comprising a non-magnetic substrate such as on polyethylene terephthalate film, and deposited on the surface of the substrate by a ionized cluster beam deposition method, at least one ferromagnetic material selected from the group consisting of cobalt, cobalt-containing alloys, mixtures of cobalt with other elements, and chromium dioxide; and a process for production thereof. The magnetic recording medium is characterized by having superior magnetic properties, especially superior coercive force, residual magnetic flux density and squareness ratio, and high mechanical strength.

Abstract: A material is introduced into and heated within a crucible of the sealed type for vaporization purposes and the crucible includes an ejection nozzle. The vapor of the material is then ejected through the nozzle into a vacuum region to strike onto a substrate, the pressure of the vacuum region being selected to be at least 1/100 times as low as the vapor pressure within the crucible and of approximately 10.sup.-2 Torr or less. Change in ejection velocity provide control of fine structures of films when being deposited on the substrate.

Abstract: A magnetic recording medium comprising a non-magnetic substrate such as polyethylene terephthalate film, and deposited on the surface of the substrate by an ionized cluster beam deposition method, at least one ferro-magnetic material selected from the group consisting of cobalt, cobalt-containing alloys, mixtures of cobalt with other elements, and chromium dioxide; and a process for production thereof. The magnetic recording medium is characterized by having superior magnetic properties, especially superior coercive force, residual magnetic flux density and squareness ratio, and high mechanical strength.

Abstract: A method of producing compounds which comprises the steps of separately vaporizing a plurality of substances containing the component elements of a desired compound and placed in a plurality of crucibles to form vapors of the substances, mixing the vapors in a heated mixing chamber to form a mixed vapor, jetting the mixed vapor into a vacuum region to form clusters, ionizing the clusters to form cluster ions, and accelerating the cluster ions to make them impinge on a substrate.

Abstract: A method of coating which comprises the steps of separately vaporizing a plurality of substances containing the component elements of a desired compound and placed in a plurality of crucibles to form vapors of the substances, mixing the vapors in a heated mixing chamber to form a mixed vapor, jetting the mixed vapor into a vacuum region to form clusters, ionizing the clusters to form cluster ions, and accelerating the cluster ions to make them impinge on a substrate.

Abstract: A process for forming a thin single-crystal film comprising the steps of heating and vaporizing a film material in a closed type crucible to form vapor of the film material, injecting the vapor into a high vacuum region to form clusters of atoms of said vapor, ionizing said clusters by bombarding them with electrons to produce ionized clusters, accelerating the ionized clusters onto a cleavage plane of a substrate material to form a high-quality crystal film deposited thereon and oriented according to the crystal axis of the substrate material, and separating the crystal film by dissolving the substrate material in a solvent.

Abstract: A Schottky barrier type solid-state element and a method of producing the same, the Schottky barrier type solid-state element comprising a Schottky barrier type element portion consisting of a metallic board and a semiconductor film layer provided on the metallic board, the metallic board being formed of such a metal as can form a Schottky barrier between itself and the semiconductor film layer, and a semiconductor-side terminal electrode provided on the external surface of the semiconductor film layer so as to obtain an ohmic contact therewith, wherein at least the semiconductor film layer is formed by what is called the ionized-cluster-beam deposition process.

Abstract: The present ion source called "Vaporized-Metal Cluster Ion Source" is adapted to produce ionized vapor aggregate (ionized cluster) instead of atomic or molecular ions in conventional ion sources. Clusters consisting of 10.sup.2 -10.sup.3 atoms are formed by the adiabatic expansion due to the ejection into a high vacuum region through a nozzle of a heated crucible and ionized by electron bombardment. By "Ionized-Cluster Beam Deposition" using the ion source, fine-quality deposited films of many kinds of materials can be obtained on metal, semiconductor and insulator substrate with strong adhesion and with a fairly high deposition rate.

Abstract: An ion plating apparatus having a plurality of vapor sources for supplying the vapors of evaporating materials, the particles of the vapors being ionized and accelerated by an electric field to impinge on the surface of a substrate so as to form a film of the evaporating materials thereon is disclosed. An ionization chamber common to a plurality of the vapor sources, the ionization chamber being composed of parallel filaments for emitting electrons is also disclosed. Grid-shaped electron-accelerating electrodes are provided between the filaments so that the vapors of the evaporating materials pass between them, and the electron-accelerating electrodes kept at a positive potential with respect to the filaments thereby to ionize the vapors of the evaporating materials.

Abstract: An apparatus for forming compound semiconductors, which has a plurality of closed type crucibles for separately holding and vaporizing the component elements of a desired compound semiconductor thin-film, the crucibles each having at least one injection nozzle, a plurality of temperature control sections for separately controlling vapor pressures inside the crucibles so that the vapors jetted from the injection nozzles of the crucibles may form clusters, a plurality of ionization chambers provided in the vicinity of the injection nozzles of the crucibles respectively for ionizing the clusters, and acceleration power supplies provided between a substrate and the ionization chambers for giving kinetic energy to the cluster ions to make them impinge on the surface of the substrate so as to form a thin film thereon.

Abstract: A p-n junction type solid-state element having at least a pair of p-n junction type semiconductor layers formed of a p-type semiconductor and an n-type semiconductor joined with each other and a method of producing the same, in which the p-type semiconductor and n-type semiconductor are formed and joined by forming at least one of the semiconductors using what is called the ionized-cluster-beam deposition process which evaporates a material to be deposited to form a vapor, injects the vapor into a vacuum region to form clusters of atoms, ionizes the clusters and electrically accelerates ionized clusters onto a substrate thereby forming a layer thereon.

Abstract: An ion source of the electron bombardment type which includes mainly a cathode and an anode confronting the cathode. In order to effect the formation of a magnetic field perpendicular to an electric field established between the cathode and the anode, the anode and/or the cathode is of a particular configuration, more specifically a spiral or helical configuration. A flow of large current is supplied through the anode to establish the magnetic field while application of a given voltage across the cathode produces a multiplicity of electrons. With such an arrangement, movements of charged particles such as electrons or ions are controlled under the influences of the electric and magnetic fields thereby to enhance the production of ions. High temperature operations and simplified implementations become possible because the present ion source itself produces the magnetic field with only a modification of the electrode assembly thereof.

Abstract: The present ion source called "Vaporized-Metal Cluster Ion Source" is adapted to produce ionized vapor aggregate (ionized cluster) instead of atomic or molecular ions in conventional ion sources. Clusters consisting of 10.sup.2 -10.sup.3 atoms are formed by the adiabatic expansion due to the ejection into a high vacuum region through a nozzle of a heated crucible and ionized by electron bombardment. By "Ionized-Cluster Beam Deposition" using the ion source, fine-quality deposited films of many kinds of materials can be obtained on metal, semiconductor and insulator substrate with strong adhesion and with a fairly high deposition rate.

Abstract: A Schottky barrier type solid-state element and a method of producing the same, the Schottky barrier type solid-state element comprising a Schottky barrier type element portion consisting of a metallic board and a semiconductor film layer provided on the metallic board, the metallic board being formed of such a metal as can form a Schottky barrier between itself and the semiconductor film layer, and a semiconductor-side terminal electrode provided on the external surface of the semiconductor film layer so as to obtain an ohmic contact therewith, wherein at least the semiconductor film layer is formed by what is called the ionized-cluster-beam deposition process.

Abstract: A process for producing a thin fluorescent film for electroluminescence includes the steps of heating a raw material, composed of a base material and an activator, within an enclosed type crucible so as to generate a mixed vapor, injecting the mixed vapor into a vacuum zone through means of an injection nozzle, projecting an electron beam into the injected mixed vapor so as to ionize the mixed vapor, accelerating the ionized mixed vapor by means of an electric field, and permitting the accelerated ionized mixed vapor to collide with a base plate so as to form a vapor-deposited film upon the base plate.