Abstract: An elastic fastener 1 comprises a hollow tubular portion 7, an internally threaded portion 2 provided at one of the ends of the tubular portion 7, and a flange 9 formed at the other end of the tubular portion 7. The tubular portion 7 and the flange 9 are integrally formed of an elastomeric material, such as a styrene-based elastomer, a polyamide-based elastomer and a polyester-based elastomer. The internally threaded portion 2 is formed of a rigid resin material such as a polycarbonate resin. The internally threaded portion 2 is integrally fixed to the tubular portion 7 in a hole of the tubular portion.

Abstract: A scanning unit for moving an object to be moved along at least one axis, which comprises a first actuator for moving the object along a first axis, the first actuator having a pair of end portions, and the object being attached to one of the end portions, the first actuator being held at a position in the vicinity of the center in dimension or the center of gravity thereof.

Abstract: A method of and an apparatus for manufacturing semiconductors, in which a liquid raw material can be uniformly supplied onto a wafer and a gas required for film formation can be also uniformly supplied onto the wafer. A liquid raw material is sprayed from a tip end of a vaporizing nozzle into a vacuum chamber as liquid droplets, and is vaporized by heat generated from the wafer placed on a susceptor. When the liquid raw material is sprayed, a gas required for film forming reaction is supplied into the vacuum chamber from a gas supply pipe provided on an outer periphery of the vaporizing nozzle. The vaporizing nozzle and the gas supply pipe are formed to be concentric, and a liquid raw material spray port is formed centrally of the vaporizing nozzle.

Abstract: Described is a manufacturing method of a semiconductor integrated circuit device by depositing a silicon nitride film to give a uniform thickness over the main surface of a semiconductor wafer having a high pattern density region and a low pattern density region. This is attained by, upon depositing a silicon nitride film over a substrate having a high gate-electrode-pattern density region and a low gate-electrode-pattern density region by using a single-wafer cold-wall thermal CVD reactor, setting a flow rate ratio of ammonia (NH3) to monosilane (SiH4) greater than that upon deposition of a silicon nitride film over a flat substrate.

Abstract: Described is a manufacturing method of a semiconductor integrated circuit device by depositing a silicon nitride film to give a uniform thickness over the main surface of a semiconductor wafer having a high pattern density region and a low pattern density region. This is attained by, upon depositing a silicon nitride film over a substrate having a high gate-electrode-pattern density region and a low gate-electrode-pattern density region by using a single-wafer cold-wall thermal CVD reactor, setting a flow rate ratio of ammonia (NH3) to monosilane (SiH4) greater than that upon deposition of a silicon nitride film over a flat substrate.

Abstract: A scanning unit for moving an object to be moved along at least one axis, which comprises a first actuator for moving the object along a first axis, the first actuator having a pair of end portions, and the object being attached to one of the end portions, the first actuator being held at a position in the vicinity of the center in dimension or the center of gravity thereof.

Abstract: A substrate processing apparatus includes a reaction chamber, a protection cover, a first heater, a second heater, and a gas supply pipe. The reaction chamber has a wall side and the protection cover covers an inner surface of the wall side. The first heater is interposed between the wall side and the protection cover and serves to heat the protection cover. The second heater is positioned in the reaction chamber and serves to heat a substrate transported in the reaction chamber. The gas supply pipe communicates with the reaction chamber and serves to supply material gas on the substrate.

Abstract: There is a treatment method for allowing cut flowers to be kept appearing like natural flowers for a long period of time for the purpose of decoration, comprising the steps of removing the tissue water of cut flowers of roses or the like, allowing polyethylene glycol to permeate into the tissue once filled with tissue water, and dyeing. The cut flowers are packed with leaves for offering as merchandise. However, leaves are generally thicker than petals and their nerves act as barriers.

Abstract: A ruthenium electrode with a low amount of oxygen contamination and high thermal stability is formed by a chemical vapor deposition method. In the chemical vapor deposition method using an organoruthenium compound as a precursor, the introduction of an oxidation gas is limited to when the precursor is supplying, and the reaction is allowed to occur at a low oxygen partial pressure. Consequently, it is possible to form a ruthenium film with a low amount of oxygen contamination. Further, after formation of the ruthenium film, annealing at not less than the formation temperature is performed, thereby forming a ruthenium film with high thermal stability.

Abstract: A perpendicular magnetic recording medium having an excellent thermal stability of the recorded signal and S/N and a low medium noise, and capable of easily forming a perpendicular magnetic recording layer is provided. The perpendicular magnetic recording medium has, at least, a perpendicular magnetic recording layer having a hexagonal closest packing (hcp) structure of which c-axis is perpendicular to a surface of the perpendicular magnetic recording layer, on a non-magnetic base, wherein the perpendicular magnetic recording layer has a saturation magnetization Ms of not more than 400 emu/cc, and a lattice constant c of the hexagonal closest packing structure is not more than 4.07 Å.

Abstract: Described is a manufacturing method of a semiconductor integrated circuit device by depositing a silicon nitride film to give a uniform thickness over the main surface of a semiconductor wafer having a high pattern density region and a low pattern density region. This is attained by, upon depositing a silicon nitride film over a substrate having a high gate-electrode-pattern density region and a low gate-electrode-pattern density region by using a single-wafer cold-wall thermal CVD reactor, setting a flow rate ratio of ammonia (NH3) to monosilane (SiH4) greater than that upon deposition of a silicon nitride film over a flat substrate.

Abstract: The present invention is a treatment method for preserving cut flowers, which has a dehydration process for removing the tissue water of cut flowers using a solvent, and a permeation process for letting polyethylene glycol permeate after dehydration, to substitute the solvent by polyethylene glycol, characterized in that the dehydration process is effected while the cut flowers are fixed in a container having a proper amount of a molecular sieve spread over its bottom and filled with a solvent having a specific gravity smaller than that of water, wherein the specific gravity of the solvent is measured to monitor the change of the solvent in dehydratability, and the time when the specific gravity suddenly rises is detected as the time for exchanging the molecular sieve for a new one, to restore the dehydratability of the solvent, thereby allowing the solvent to be used continuously and allowing the dehydration process to be continued without waste of time.

Abstract: A scanning unit for moving an object to be moved along at least one axis, which comprises a first actuator for moving the object along a first axis, the first actuator having a pair of end portions, and the object being attached to one of the end portions, the first actuator being held at a position in the vicinity of the center in dimension or the center of gravity thereof.

Abstract: A method of fabricating in-situ doped rough polycrystalline silicon in a single process in a single wafer reactor is disclosed. The method includes substantially simultaneously flowing SiH4, PH3, and H2 in the single wafer reactor under predetermined temperature and pressure conditions and gas flow rates that result in nucleation and growth of a rugged polycrystalline silicon.

Abstract: A cantilever is attached to a moving block by means of a holder. Three sapphire plates are provided at a corner of the moving block so that their respective planes extend at right angles to one another. Three piezo-actuators are displaceable in directions intersecting at right angles to one another, and fixed with their one ends to stationary tables, respectively. Sapphire plates are attached individually to the respective other ends of the piezo-actuators. Each sapphire plate faces its corresponding sapphire plate on the moving block with ruby spheres between them. Two attracting magnets are attached individually to the respective sapphire plates at the center. The magnets face each other with a narrow enough space of, e.g., several micrometers between them.

Abstract: A cantilever is attached to a moving block by means of a holder. Three sapphire plates are provided at a corner of the moving block so that their respective planes extend at right angles to one another. Three piezo-actuators are displaceable in directions intersecting at right angles to one another, and fixed with their one ends to stationary tables, respectively. Sapphire plates are attached individually to the respective other ends of the piezo-actuators. Each sapphire plate faces its corresponding sapphire plate on the moving block with ruby spheres between them. Two attracting magnets are attached individually to the respective sapphire plates at the center. The magnets face each other with a narrow enough space of, e.g., several micrometers between them.

Abstract: A production line has a plurality of processing stations which includes both manual and automatic processing stations. A workpiece conveying system combined with the production line has a base, a pair of side plates mounted on the base, a plurality of spaced roller shafts rotatably supported on the side plates, a plurality of rollers mounted on the roller shafts for conveying workpieces thereon, and a drive mechanism for rotating the roller shafts to rotate the rollers. In the manual processing station, the rollers are rigidly fixed to the roller shafts for conveying workpieces at fixed intervals. In the automatic processing station, the rollers are held in frictionally rotatable engagement with the roller shafts for rotation in unison with the roller shafts. When resistive forces greater than a given level are applied to the rollers, the roller shafts rotate idly thereby adjusting intervals between workpieces in the automatic processing station.

Abstract: A magnetic recording medium which comprises, on a substrate, a Cr undercoat layer and a Co alloy thin film formed on the substrate in this order. The coercive force of the medium is significantly improved by incorporating oxygen either in the Cr undercoat layer or in the Co alloy thin film.

Abstract: An apparatus of making a soft ice-drink comprises a mixing mechanism including a container containing a liquid material such as syrup and into which shaved ice pieces are discharged, rotary blades, rotatably supported within the container, for mixing together the liquid material and shaved ice pieces and smashing the shaved ice pieces into granules of ice, and a drive motor for rotating the rotary blades at high speeds, and an ice shaving mechanism, disposed on an apparatus bed and above the mixing mechanism, including a shaver casing having a slit to which a shaving blade is exposed and a shaved ice dischage chute opened to above the container, and rotatable blades, provided within the shaver casing, for cooperating with the shaving blade to shave ice blocks charged into the shaver casing.

Abstract: A domestic ice shaver comprises a box-like base frame unit having a top surface beyond which a drive shaft rotated by a built-in motor protrudes, a shaver case unit mounted on the base frame unit and having a shaved ice piece discharge port to which a shaving blade faces, a rotary blade unit fixed to the upper end of the drive shaft within the shaver case unit and having, on its top, a cylindrical hopper, and a cover unit mounted to the shaver case unit to cover an upper portion thereof and having a central openable lid. There is provided on the outer surface of the shaver case unit a shaving blade block detachably disposed rearwardly of the shaved ice piece discharged port. The shaving blade block has a front edge portion mounted with the shaving blade confronting the shaved ice piece discharge port.