Abstract: In a photovoltaic cell, an i-type amorphous silicon film and an n-type amorphous silicon film are formed in a region excluding a predetermined width of an outer periphery on a main surface of an n-type single crystalline silicon substrate. A front electrode is formed so as to cover the i-type amorphous silicon film and the n-type amorphous silicon film on a main surface of the n-type single crystalline silicon substrate. An i-type amorphous silicon film and a p-type amorphous silicon film are formed on the entire area of a back surface of the n-type single crystalline silicon substrate. Aback electrode is formed in a region excluding a predetermined width of an outer periphery on the p-type amorphous silicon film. A surface, on the side of the front electrode, of the photovoltaic cell is a primary light incidence surface.

Abstract: Solar cells and methods of their manufacture are described that exhibit decreased or eliminated leak current, improved open voltage and improved fill factor characteristics. In an embodiment, a separate processed surface is interposed between a first and a second main surface of a crystal substrate, as prepared by laser irradiation and cut processing. The laser irradiation is applied to an amorphous semiconductor layer of the same conductive type as an underlying single crystal substrate, but does not penetrate an underlying amorphous opposite type layer. Details of lamination and laser characteristics for processing the layers are provided.

Abstract: A photovoltaic device having a crystalline semiconductor and an amorphous semiconductor thin film so that junction characteristics can be upgraded. The photovoltaic device includes an i-type amorphous silicon thin film and a p-type amorphous silicon thin layer laminated in this order on a front surface of an n-type single crystalline silicon substrate, and an i-type amorphous silicon layer and an n-type amorphous silicon layer laminated in this order on a rear surface of the single crystalline silicon substrate, wherein an i-type amorphous silicon film is formed after the front surface of the single crystalline silicon substrate is exposed to a plasma discharge using mixed gas of hydrogen gas and a gas containing boron so that atoms of boron may be interposed on an interface between the single crystalline silicon substrate and the i-type amorphous silicon layer.

Abstract: An i-type amorphous silicon film and an anti-reflection film made of amorphous silicon nitride or the like are formed in this order on a main surface of an n-type single-crystalline silicon substrate. On a back surface of the n-type single-crystalline silicon substrate are provided a positive electrode and a negative electrode next to each other. The positive electrode includes an i-type amorphous silicon film, a p-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate. The negative electrode includes an i-type amorphous silicon film, an n-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate.

Abstract: A photovoltaic device capable of improving output characteristics is provided. This photovoltaic device comprises a crystalline semiconductor member, a substantially intrinsic first amorphous semiconductor layer formed on the front surface of the crystalline semiconductor member and a first conductivity type second amorphous semiconductor layer formed on the front surface of the first amorphous semiconductor layer, and has a hydrogen concentration peak in the first amorphous semiconductor layer. Thus, the quantity of hydrogen atoms in the first amorphous semiconductor layer is so increased that the hydrogen atoms increased in quantity can be bonded to dangling bonds of silicon atoms forming defects in the first amorphous semiconductor layer for inactivating the dangling bonds.

Abstract: The present invention was made to improve interface characteristics between a crystalline semiconductor and an amorphous semiconductor thin film so that junction characteristics can be upgraded. A manufacturing method of a photovoltaic device comprising an i-type amorphous silicon thin film (12) and a p-type amorphous silicon thin layer (13) laminated in this order on a front surface of an n-type single crystalline silicon substrate (11), and an i-type amorphous silicon layer (14) and an n-type amorphous silicon layer (15) laminated in this order on a rear surface of the single crystalline silicon substrate, wherein an i-type amorphous silicon layer (12) is formed after the front surface of the single crystalline silicon substrate (11) is exposed to a plasma discharge using mixed gas of hydrogen gas and a gas containing boron so that atoms of boron may be interposed on an interface between the single crystalline silicon substrate (11) and the i-type amorphous silicon layer (12).

Abstract: In a photovoltaic device of the present invention, junction characteristics are improved by enhancing interface characteristics between a crystalline silicon semiconductor and an amorphous silicon semiconductor. In the photovoltaic device, an n-type crystalline substrate (11) and a p-type amorphous silicon thin film (13) are laminated with an i-type amorphous silicon thin film (12) interposed as well as an n-type amorphous silicon thin film (15) is provided on a rear surface of the crystalline silicon substrate (11) by interposing an i-type amorphous silicon thin film (14) between them. Oxygen atoms exist at interfaces between the crystalline silicon substrate (11) and the i-type amorphous silicon thin films (12), (14) in a higher concentration than that in the i-type amorphous silicon thin films (12), (14).