Abstract: There is provided a method of forming an ohmic electrode, including the steps of: forming a hafnium layer on a surface of an n type nitride-based compound semiconductor layer to have a thickness of 1 to 15 nm; forming an aluminum layer on the hafnium layer; and annealing the hafnium layer and the aluminum layer to form a layer formed of hafnium and aluminum mixed together.

Abstract: A nitride based semiconductor light emitting element includes at least a gallium nitride based compound semiconductor layer of a first conductivity type and a gallium nitride based compound semiconductor layer of a second conductivity type stacked on a substrate. On a main region of the top surface of the semiconductor layer of the second conductivity type, a Pd-containing electrode is formed, and the top surface and side surfaces of the Pd-containing electrode as well as the surface of the semiconductor layer of the second conductivity type in a region of at least a prescribed width from the side surfaces are covered by a conductive shielding film to be shielded from the atmosphere or a mold resin.

Abstract: A gallium nitride compound semiconductor light emitting element has a nitride layered body formed on a translucent substrate. A P type pad electrode, an N type pad electrode and a P type electrode are formed at the layered body, each having the desired reflectance. The thickness of the translucent substrate and the nitride layered body stacked thereon of the semiconductor light emitting element is 60 &mgr;m to 460 &mgr;m.

Abstract: The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substrate is partially removed to expose a part of the p type nitride semiconductor layer. On the exposed region of the p type nitride semiconductor layer, a p type electrode is formed.

Abstract: A work support information extracting program and a work support information extracting system using the program assist in extracting work support information by inputting staff/organization DB containing the organization structure and staff structure in a staff/organization DB input process, extracting the work DB containing a work item, a work carrying-out unit and work carrying-out condition, and generating the work support flow data, well-coordinated throughout the organization, from the staff /organization DB and work DB in the work support flow generating process.

Abstract: A work support information extraxting proram and a work support information extracting system unsing thereof assist to extract the work support information by inputting the staff/organization DB containing the organization structure and staff structure in the staff/organization DB input process, extracting the work DB containing the work item, work carrying-out unit and work carrying-out condition, and generating the work support flow data, well-coordinated throughout the organization, from the staff/organization DB and work DB in the work support flow generating process.

Abstract: A computer network comprising a monitoring apparatus and a plurality of servers, wherein the servers respectively have a plurality of software programs, and a data file for storing error analysis information to be utilized for analysis of the cause of an error upon occurrence of error, for each software program. Further, the servers respectively have a function to transmit an error notifying message including a software identifier of a software program executed upon occurrence of error to the monitoring apparatus. The monitoring terminal apparatus has a function to instruct at least one server, specified based on the software identifier included in the error notifying message, to save error analysis information, in response to the error notifying message received from any one of the servers.

Abstract: A frequency-switching oscillator which satisfies the conditions for oscillation, even when the switch width of the oscillation frequencies is great, without requiring a number of components to be increased. The impedance of a resonance system is set to satisfy the conditions for oscillation at two or more oscillation frequencies. A switching member is provided in the amplification system, and the oscillation frequencies are switched by changing the impedance of the amplification system. Since the resonance system does not require a switching member, loss is not caused by switching member in the resonance system, so the output level does not drop and the carrier-to-noise ratio does not deteriorate. Furthermore, without a switching member in the resonance system, the number of components can be reduced, making miniaturization and cost reduction possible.

Abstract: A semiconductor light emitter characterized by including a semiconductor layer for providing an electric current block region and an electric current injection region on a surface thereof, an electric current block layer formed on the semiconductor layer for defining the electric current block region, a pad electrode formed on the electric current block layer, and a light-transmissive electrode formed on the semiconductor layer for defining the electric current injection region, wherein the pad electrode has an electrode connection portion for connection with the light-transmissive electrode. Such a semiconductor light emitter can prevent failure in electric current introduction into the light emitter owing to disconnection of the light-transmissive electrode and increase of the resistance of the light-transmissive electrode. It is possible to produce light emitters with good behavior in a good yield.

Abstract: In a nitride type compound semiconductor light emitting element, a phosphor layer is formed in a multilayer constituting the light emitting element. A highly-reflective layer is formed at a side plane of the light emitting element. The nitride type compound semiconductor light emitting element can emit white light or multi-colored light, and is superior in mass production and reliability. The wavelength of the emitted light can be converted into a different wavelength by the light emitting element alone.

Abstract: A computer network comprising a monitoring apparatus and a plurality of servers, wherein the servers respectively have a plurality of software programs, and a data file for storing error analysis information to be utilized for analysis of the cause of an error upon occurrence of error, for each software program. Further, the servers respectively have a function to transmit an error notifying message including a software identifier of a software program executed upon occurrence of error to the monitoring apparatus. The monitoring terminal apparatus has a function to instruct at least one server, specified based on the software identifier included in the error notifying message, to save error analysis information, in response to the error notifying message received from any one of the servers.

Abstract: A frequency-switching oscillator which satisfies the conditions for oscillation, even when the switch width of the oscillation frequencies is great, without requiring a number of components to be increased. The impedance of a resonance system is set to satisfy the conditions for oscillation at two or more oscillation frequencies. A switching member is provided in the amplification system, and the oscillation frequencies are switched by changing the impedance of the amplification system. Since the resonance system does not require a switching member, loss is not caused by switching member in the resonance system, so the output level does not drop and the carrier-to-noise ratio does not deteriorate. Furthermore, without a switching member in the resonance system, the number of components can be reduced, making miniaturization and cost reduction possible.

Abstract: According to one aspect of the present invention, there is provided a light emitting apparatus including: a light emitting device for emitting light; and a first lead frame and a second lead frame on which the light emitting device is mounted.

Abstract: A nitride based semiconductor light emitting element includes at least a gallium nitride based compound semiconductor layer of a first conductivity type and a gallium nitride based compound semiconductor layer of a second conductivity type stacked on a substrate. On a main region of the top surface of the semiconductor layer of the second conductivity type, a Pd-containing electrode is formed, and the top surface and side surfaces of the Pd-containing electrode as well as the surface of the semiconductor layer of the second conductivity type in a region of at least a prescribed width from the side surfaces are covered by a conductive shielding film to be shielded from the atmosphere or a mold resin.

Abstract: A gallium nitride compound semiconductor light emission device includes: a substrate; an n-type electrode region comprising an n-type transmissive electrode; a gallium nitride compound semiconductor multilayer structure including an active layer; and a p-type electrode region comprising a p-type transmissive electrode. The p-type transmissive electrode and the n-type transmissive electrode transmit light which is generated in the active layer and reflected from the substrate so that the light exits the light emission device.

Abstract: A semiconductor light emitting device includes: a substrate; a contact layer made of a gallium nitride based compound semiconductor formed on the substrate; a stripe-shaped conductive selective growth mask formed above the contact layer; and a layered structure made of a gallium nitride based compound semiconductor. The layered structure includes at least a pair of cladding layers, formed on the conductive selective growth mask, and an active layer, including at least one layer, sandwiched by the cladding layers.

Abstract: An oscillator includes an oscillating circuit and a resonating circuit connected to the oscillating circuit, and an amplifying circuit for amplifying signals output from the oscillating circuit. The oscillator also includes an added circuit having an isolator, frequency filter, or other suitable elements, disposed between the output portion of the oscillating circuit and the input portion of the amplifying circuit, so as to prevent transmission of unwanted waves, such as the higher harmonic component of the basic wave, and other such undesirable waves. The oscillator, and a communication apparatus including such oscillator, eliminates deterioration of phase noise properties caused by generation of unwanted wave components such as higher harmonics.

Abstract: A gallium nitride group compound semiconductor light-emitting device comprises a substrate and a layered structure provided on the substrate. The layered structure includes: an active layer; an upper cladding layer and a lower cladding layer which is located closer to the substrate than the upper cladding layer, the active layer interposed between the cladding layers; an internal current constricting layer having an opening for constricting a current within a selected region of the active layer, the internal current constricting layer being provided on the upper cladding layer; a surface protecting layer for covering the internal current constricting layer and an exposed surface of the upper cladding layer in the opening of the internal current constricting layer; and a regrowth layer provided on the surface protecting layer. The surface protecting layer serves as a protecting layer for the upper cladding layer and the internal current constricting layer in a step of forming the regrowth layer.

Abstract: A gallium nitride group compound semiconductor light-emitting device comprising a layered structure on a substrate, the layered structure including: an active layer; a first cladding layer and a second cladding layer with the active layer interposed therebetween, the second cladding layer being located further away from the substrate than the first cladding layer, and having a stripe-shaped projection; a surface protecting layer and an internal current blocking layer which are formed on the second cladding layer and have an opening at a position corresponding to a position on the stripe-shaped projection; and a regrowth layer which covers both the internal current blocking layer and an exposed surface of the second cladding layer to the opening, wherein the surface protecting layer serves to prevent evaporation of Ga, N or impurity elements from the second cladding layer in a process including forming the internal current blocking layer.

Abstract: A small-sized oscillator which readily oscillates and an oscillation apparatus using same are described. In the oscillator, an oscillation transistor, such as a silicon bipolar transistor, is arranged on a dielectric substrate and a quarter-wave open-circuit terminal stub is connected to the base of the oscillation transistor. Also, the collector of the oscillation transistor is grounded through a capacitor. In addition, the emitter of the oscillation transistor is connected to the collector and base through feedback capacitors C1 and C2, respectively. In this case, the quarter-wave open-circuit terminal stub can be considered grounded from the standpoint of distributed constants, and accordingly, the oscillator is also grounded.