Abstract: The light-emitting device of the present invention includes LED chips provided on a ceramic substrate and a sealing material in which the LED chips are embedded. The sealing material contains a fluorescent substance and divided into a first fluorescent-substance-containing resin layer and a second fluorescent-substance-containing resin layer by a first resin ring and a second resin ring.

Abstract: A fluorescence-containing material injection apparatus of the present invention includes a fluorescence-containing material temperature control section, a fluorescence-containing material stirring section, a fluorescence-containing material remaining amount sensor, and a fluorescence-containing material injection amount adjustment section, by which disproportion in the mixture ratio of contaminates in a fluorescence-containing material M is restrained. This makes it possible to evenly apply a fluorescence-containing material onto a semiconductor light emitting element.

Abstract: The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

Abstract: A display apparatus according to one embodiment of the present invention is a display apparatus comprising a surface mount-type light-emitting device having an external terminal for surface mounting; a wiring substrate where the surface mount-type light-emitting device has been mounted; a lens unit disposed opposing the surface mount-type light-emitting device; and a frame body portion disposed surrounding the lens unit.

Abstract: By using a light emitting device including an insulating substrate and a light emitting unit formed on the insulating substrate, the light emitting unit including: a plurality of linear wiring patterns disposed on the insulating substrate in parallel with one another, a plurality of light emitting elements that are mounted between the wiring patterns while being electrically connected to the wiring patterns, and a sealing member for sealing the light emitting elements, as well as a method for manufacturing thereof, it becomes possible to provide a light emitting device that achieves sufficient electrical insulation and has simple manufacturing processes so that it can be manufactured at a low cost, and a method for manufacturing the same.

Abstract: A fabrication method of a nitride-based semiconductor device includes the steps of forming a stacked structure constituted of a nitride-based semiconductor on a support substrate, depositing a first bonding metal on the stacked structure, depositing a second bonding metal on a retention substrate, bonding the first bonding metal and the second bonding metal in a state where the first bonding metal and the second bonding metal face each other to unite the retention substrate and the stacked structure, wherein the first bonding metal and the second bonding metal constitute the bonding metal, and separating the support substrate from the stacked structure for removal. The area of the surface of the retention substrate is set smaller than the area of the surface of the support substrate. Accordingly, cracking, fracture, chipping, and the like at the retention substrate can be prevented.

Abstract: A light emitting device includes a light emitting diode chip, and a first lead terminal in which a bottom portion including a mounting region for the light emitting diode chip is formed, and a side wall continuing to the bottom portion and having an inner surface serving as a reflecting surface for light emitted from the light emitting diode chip is continuously formed. Further, the light emitting device includes a second lead terminal provided to be spaced from the first lead terminal. Furthermore, the light emitting device includes a resin portion which supports the first lead terminal and the second lead terminal, and in which a cavity exposing a portion of the second lead terminal and the mounting region in the first lead terminal is formed.

Abstract: By using a light emitting device including a substrate and a light emitting unit, the light emitting unit including: a plurality of light emitting elements that are mounted on substrate and electrically connected to external electrodes; a first sealing member layer containing a first fluorescent material, formed to cover light emitting elements; and a second sealing member layer containing a second fluorescent material, formed on first sealing member layer, as well as a method for manufacturing thereof, it becomes possible to provide a light emitting device capable of suppressing color shifts and the like by the fluorescent materials, and of being easily manufactured, as well as a method for manufacturing the same.

Abstract: A light emitting device includes: a substrate; an LED chip provided on a main surface of the substrate; and a printed resistor element connected in parallel with the LED chip, the printed resistor element being provided in at least one of regions (i) on the main surface of the substrate, (ii) on a back surface of the substrate, and (iii) inside the substrate. According to the arrangement, it is possible to provide: a light emitting device which can emit light having preferable luminance without a reduction in optical output by suppressing light shielding and light absorption of light emitted from the LED toward the outside; and a method for manufacturing the light emitting device.

Abstract: By using a light emitting device including an insulating substrate and a light emitting unit formed on the insulating substrate, the light emitting unit including: a plurality of linear wiring patterns disposed on the insulating substrate in parallel with one another, a plurality of light emitting elements that are mounted between the wiring patterns while being electrically connected to the wiring patterns, and a sealing member for sealing the light emitting elements, as well as a method for manufacturing thereof, it becomes possible to provide a light emitting device that achieves sufficient electrical insulation and has simple manufacturing processes so that it can be manufactured at a low cost, and a method for manufacturing the same.

Abstract: A light-emitting apparatus including: a substrate; an LED chip mounted on a first surface of the substrate; a fluorescent material-containing layer containing a first fluorescent material, which fluorescent material-containing layer is provided above the first surface of the substrate so as to cover the LED chip; and a color-adjusting fluorescent layer that contains a second fluorescent material, which color-adjusting fluorescent material layer is formed in a layer provided on an outer side of the fluorescent material-containing layer in an emission direction, the color-adjusting fluorescent layer being formed in dots. Thus, the present invention provides a light-emitting apparatus and a method for manufacturing the same, each making it possible to carry out fine color adjustment so as to prevent a subtle color shift that occurs due to a factor such as a difference in concentration of a fluorescent material or the like.

Abstract: A silver-plated metal member region on which a light emitting element is disposed, an extraction electrode having a copper plate pattern, and a convex resin portion separating the metal member region into a plurality of sections are provided on the bottom surface of a concave portion in a package of a semiconductor light emitting device. A covering resin is partially formed on the metal member region and a sealing resin is placed to cover the metal member region, the covering resin and the convex resin portion. According to this configuration, the area of contact is decreased between the sealing resin and the metal member region having the light emitting element placed thereon, to thereby prevent the light emitting element from falling off and being displaced from the metal member region, with the result that a semiconductor light emitting device of high reliability can be provided.

Abstract: To provide a light emitting device easy to produce and extracting light to its outside with high efficiency, the light-emitting device 70 of the present invention includes an insulating base 10; a light-emitting element 1 mounted on a side of the base 10; and a protection element 2 mounted on the side and protecting the light-emitting element 1. The element 2 is covered with a light-reflecting filler-containing resin 5, which is prepared by causing a flexible silicone resin to contain, before being cured, light-reflecting or light-scattering fillers 5a having a particle diameter larger than the wavelength of light emitted by the element 1. This causes light emitted from the element 1 to be reflected by the resin 5, instead of being absorbed by the element 2, so that such light is released to the outside of the light-emitting device 70. This allows the device 70 to extract light to the outside with high efficiency, and also allows for easy formation of the resin 5 having a desired pattern and position.

Abstract: A light-emitting device in accordance with an embodiment of the present invention includes a semiconductor light-emitting element, and a member in the periphery of the semiconductor light-emitting element is made of a material whose color, transparency or adhesiveness changes over time as it is subjected to light or heat emitted by the semiconductor light-emitting element.

Abstract: A light-emitting device has a structure in which a light-emitting element is placed on a wiring pattern, with the wiring pattern and an upper portion of the light-emitting element being connected with each other by a bonding wire, and has a feature in that a phosphor kneaded matter, obtained from a phosphor kneaded matter packaging container, is sealed on the wiring pattern and the light-emitting element by a sealing resin. With this structure, it becomes possible to emit white light with high efficiency and consequently to obtain white light that is remarkably superior in color reproducibility (NTSC ratio).

Abstract: A light-emitting apparatus of the present invention has (i) a semiconductor device which emits light toward a higher position than a substrate and (ii) a plurality of external connection terminals, and includes: a light-reflecting layer, provided on the substrate, which reflects the light emitted by the semiconductor device; and a covering layer which covers at least the light-reflecting layer and which transmits the light reflected by the light-reflecting layer. Further, the semiconductor device is provided on the covering layer, and is electrically connected to the external connection terminals via connecting portions, and the semiconductor device and the connecting portions are sealed with a sealing resin so as to be covered. Therefore, the light-emitting apparatus has increased efficiency with which light is taken out, and can prevent a reflecting layer from being altered, deteriorating, and decreasing in reflectance.

Abstract: A nitride-based semiconductor light-emitting device and a manufacturing method thereof are provided. The nitride-based light-emitting device includes a first conductivity type nitride-based semiconductor layer, a light-emitting layer and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base. A first conductivity type electrode layer is electrically connected to the first conductivity type nitride-based semiconductor layer, and a second conductivity type electrode layer is electrically connected to the second conductivity type nitride-based semiconductor layer.

Abstract: A silver-plated metal member region on which a light emitting element is disposed, an extraction electrode having a copper plate pattern, and a convex resin portion separating the metal member region into a plurality of sections are provided on the bottom surface of a concave portion in a package of a semiconductor light emitting device. A covering resin is partially formed on the metal member region and a sealing resin is placed to cover the metal member region, the covering resin and the convex resin portion. According to this configuration, the area of contact is decreased between the sealing resin and the metal member region having the light emitting element placed thereon, to thereby prevent the light emitting element from falling off and being displaced from the metal member region, with the result that a semiconductor light emitting device of high reliability can be provided.

Abstract: A nitride-based compound semiconductor light emitting device includes a first conductive substrate, a first ohmic electrode formed on the first conductive substrate, a bonding metal layer formed on the first ohmic electrode, a second ohmic electrode formed on the bonding metal layer, and a nitride-based compound semiconductor layer formed on the second ohmic electrode. The nitride-based compound semiconductor layer includes at least a P-type layer, a light emitting layer and an N-type layer, and has a concave groove portion or a concave-shaped portion.

Abstract: A nitride-based semiconductor light-emitting device and a manufacturing method thereof are provided. The nitride-based light-emitting device includes a first conductivity type nitride-based semiconductor layer, a light-emitting layer and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base. A first conductivity type electrode layer is electrically connected to the first conductivity type nitride-based semiconductor layer, and a second conductivity type electrode layer is electrically connected to the second conductivity type nitride-based semiconductor layer.