Abstract: A plasma etching apparatus for etching of a sample having an etching chamber having an upper wall and a sidewall, an exchangeable jacket which is held inside of the sidewall and a heating mechanism for generating heat which radiates toward an interior of the etching chamber, the sample being disposed in the etching chamber. The apparatus includes an evacuation system which evacuates the etching chamber, an etching gas supply which supplies an etching gas into the chamber and a plasma generator which generates a plasma for performing etching of the sample in the etching chamber and at least one temperature controller for controlling a temperature of at least one such upper wall and said sidewall of said etching chamber.

Abstract: For maintenance after wet cleaning of a plasma processing apparatus which processes a specimen in a vacuum processing chamber by using a plasma, when restoration processing after the wet cleaning of members configuring the vacuum processing chamber is performed with the vacuum processing chamber opened to the atmosphere, it is automatically or semiautomatically judged whether the restoration processing is appropriate or not according to a predetermined optimum sequence inherent in the apparatus, and the next processing is started automatically or semiautomatically according to the results.

Abstract: A plasma processing apparatus for plasma processing of a substrate, having a plasma processing chamber, a supplier of a plasma processing gas, an evacuator of the plasma processing chamber, a plasma generator, and a processor which processes a substrate to be processed by exposing the substrate to the plasma which is generated. The plasma generator includes a first conductive component having a first high-frequency electric power supplied thereto, at least one second conductive component having a second high-frequency electric power supplied thereto, an insulator which insulates the first conductive component with respect to the second conductive component, and a generator which generates a high-frequency electric field between the first conductive component and the second conductive component so as to enable generation of a high-frequency electric field between the first conductive component and the second conductive component.

Abstract: In a plasma processing apparatus that has a vacuum chamber, a process gas supply means of supply gas to a processing chamber, an electrode to hold a sample inside said vacuum chamber, a plasma generator installed in said vacuum chamber opposite to said sample, and a vacuum exhaust system to decrease pressure of said vacuum chamber, a bias voltage of Vdc=−300 to −50 V is applied and the surface temperature of said plate ranges from 100 to 200° C. In addition, the surface temperature fluctuation of the silicon-made plate in said plasma processing apparatus is kept within ±25° C.

Abstract: An elevator group supervisory control system includes a plurality of individual car control units which individually control elevator units, a plurality of hall control units which control hall equipment including hall call buttons provided on each floor, a group supervisory control unit which processes an assignment of elevators based on hall Information transmitted from the plurality of hall control units, and a communication control unit having an independent power supply and provided for each individual car control unit, the communication control unit being connected with a corresponding individual car control unit, a corresponding hall control unit and the group supervisory control unit for data communications. The transmission paths of the communication control units and the group supervisory control unit are connected with each other through buses to constitute the elevator group supervisory control system.

Abstract: In the plasma processing apparatus for generating plasma in a processing chamber and processing a wafer by mutual action of electromagnetic waves radiated from a UHF band antenna installed in the processing chamber and a magnetic field formed by a magnetic field generator installed around the processing chamber, a hollow tube having one end in communication with an opening in the side wall of the processing chamber and another end, outside the processing chamber, which has a measuring window of plasma optical emission. By setting the lines of force of the magnetic field formed by the magnetic field generator so as to form an angle relative to the hollow tube, entry of plasma into the hollow tube can be prevented, and adhesion of deposits onto the measuring window can be suppressed, whereby the transmission factor of the measuring window can be kept constant over a long period of use.

Abstract: A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

Abstract: A maintenance method including performing a maintenance operation for a plasma processing apparatus having a vacuum vessel having a formed processing chamber inside, a plasma generation device for generating plasma in the processing chamber, and an electrode for holding a sample to be processed in the processing chamber. The plasma processing chamber is structured so that an upper wall of the vacuum vessel is an open-close part, and at least one of parts constituting the plasma generation device including a non-metallic brittle member is arranged in the open-close part, and at least one part of an upper wall constituting an upper side surface of the processing chamber is rotated around an almost horizontal axis and the open-close part can be held stably in a state that the open-close part on an inner side of the processing chamber is directed upward.

Abstract: A plasma processing method includes the steps of evacuating a vacuum vessel by an evacuation system, introducing a processing gas into the vacuum vessel, disposing an object or example to be processed within the vacuum vessel, supplying electrical bias power to a lower electrode within the vacuum vessel, radiating a high frequency electromagnetic wave within the vacuum vessel, and causing said processing gas to change into a plasma for performing processing of the object to be processed. The vacuum vessel includes a processing chamber having a sidewall and subjecting the sidewall to temperature control so that the temperature of the sidewall is controlled so as to be maintained within ±10° C. in a range of 20 to 80° C.

Abstract: A plasma processing apparatus has plasma generating means including a means for generating capacitive coupled discharge and a means for radiating electromagnetic waves, so that the energy state of electrons is independently controlled by a combination of a plasma due to capacitive coupled discharge and a plasma due to radiation of electromagnetic waves of a high-frequency, to thereby control the occurrence of radical species, and thereby establishing a compatibility, for example, between high selective etching and high accuracy and high speed in etching or between film quality and film formation rate. Since the density distribution of the plasma can be controlled without any change in hardware configuration by adjusting distributions of the power for capacitive coupled discharge and the power for radiation of electromagnetic waves, the entire surface of a large-sized substrate can be etched at a high accuracy into a fine pattern.

Abstract: A plasma etching apparatus for etching of a sample having an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall and a heating mechanism provided proximate to a top end of the exchangeable jacket for generating heat which radiates toward an interior of the etching chamber, the sample being disposed in the etching chamber. An evacuation system which evacuates the etching chamber, an etching gas supply which supplies an etching gas into the chamber and a plasma generator which generates a plasma for performing etching of the sample in the etching chamber.

Abstract: A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.

Abstract: In an oxide film etching, a plasma having a suitable ratio CF3, CF2, CF, F is necessary and there is a problem in which in accordance with a temperature fluctuation of an etching chamber an etching characteristic is fluctuated. Using UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and forming a temperature adjustment range of a side wall at from 10° C. and 120° C. a stable etching characteristic can be obtained. Since the oxide film etching using the low electron temperature and high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and also since a side wall temperature adjustment range is low, an apparatus structure and a heat resistant performance countermeasure can be performed easily.

Abstract: A plasma processing apparatus includes a vacuum vessel as evacuated by an evacuation system, a gas supply for supplying a processing gas into the vacuum vessel, an electrostatic chucking device for holding thereon a sample to be processed within the vacuum vessel, a lower electrode, a bias power source connected to the lower electrode for supplying bias power, and a radiator for radiating a high frequency electromagnetic wave within the vacuum vessel. The processing gas is made plasmatic and plasma is generated for use in performing processing of the sample to be processed. The radiator for radiating a high frequency electromagnetic wave including an antenna which is provided within the vacuum vessel. The antenna includes a conductor opposing the lower electrode and being connected to a high frequency bias power supply and a plate contacted with the conductor.

Abstract: In a plasma processing apparatus that has a vacuum chamber, a process gas supply means of supply gas to a processing chamber, an electrode to hold a sample inside said vacuum chamber, a plasma generator installed in said vacuum chamber opposite to said sample, and a vacuum exhaust system to decrease pressure of said vacuum chamber, a bias voltage of Vdc=−300 to −50 V is applied and the surface temperature of said plate ranges from 100° to 200° C. In addition, the surface temperature fluctuation of the silicon-made plate in said plasma processing apparatus is kept within ±25° C.

Abstract: The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of an measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter.

Abstract: A plasma processing apparatus and a method therefor which can achieve a preferred process rate, a fine pattern process capability, a selectivity and uniformity of processing at the same time compatibly for a large size wafer, which effects are achieved by controlling the plasma state and the dissociation state of etching gas through control of the electron resonance through application of a magnetic field thereto. A high frequency power at 20-300 MHz is applied across a pair of electrodes in a vacuum process chamber, and a magnetic field is formed parallel to the plane of the electrodes in the space between the electrodes. By controlling the intensity of the magnetic field in a range of 100 gauss or smaller, formation of electron cyclotron resonance and electron sheath resonance occurring from interaction between the electrical field and the magnetic field in the electrode sheath portion is controlled. Thereby, the plasma state, i.e.

Abstract: A plasma etching apparatus including a vacuum processing chamber, a plasma generation device, a processing gas supply for supplying processing gas to the processing chamber, an electrode for holding a sample to be processed in the vacuum processing chamber, and an evacuation system for reducing the pressure of the vacuum processing chamber. The processing gas includes at least one kind of gas having a composition for forming a polymerized film by plasma discharge, wherein the processing gas is made plasmatic by plasma discharge in the processing chamber. At least one surface of an inner wall surface of the processing chamber in contact with plasma in the processing chamber and a surface of an internal component part is controlled to a predetermined temperature which is lower than the temperature of the sample to be processed and a strong polymerized film is formed on the inner wall surface of the processing chamber.

Abstract: An outer reinforcement panel supports a toe board which connects a front frame and a floor panel from the undersurface of the toe board and an inner reinforcement panel supports the toe board from the topsurface of the toe board. On the outer reinforcement panel, three frames having U-shaped cross sections are integrally formed with the outer reinforcement panel in a radial manner and these frames are welded at the ends thereof to primary body skeletons such as a side sill, a wheel house, a side frame and the like. Similarly, on the inner reinforcement panel, two frames having inverse U-shaped cross sections are integrally formed with the inner reinforcement panel in a radial manner and these frames are also welded at the ends thereof to those primary body skeletons. Thus, a plurality of frames having closed cross sections are formed on inner and outer surfaces of the toe board and the floor panel.

Abstract: A body structure of a motor vehicle includes a roof side rail, a side sill, a center pillar, a floor, a center tunnel and a doubler provided between the side sill and the center tunnel. The doubler has a flat closed cross section formed by the floor and a plurality of U-shaped channels and its lengthwise width is longer than that of the lower end of the center pillar. At the outer end of the doubler there are provided a pillar mating section and a side sill mating section. The doubler is connected by welds at the pillar mating section with the center pillar and at the side sill mating section with the side sill. The center pillar has a yieldable portion thereon and it can absorb an impact energy by bending itself. The center tunnel has a reinforcement panel reinforced from underneath.