Patents by Inventor Toshio Nagasawa
Toshio Nagasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20090015220Abstract: A switching power supply device performs a stable operation with fast response for a semiconductor integrated circuit device. A capacitor is provided between the output side of an inductor and a ground potential. A first power MOSFET supplies an electric current from an input voltage to the input side of the inductor. A second power MOSFET turned on when the first power MOSFET is off allows the input side of the inductor to be of a predetermined potential. A first feedback signal corresponding to an output voltage obtained from the output side of the inductor and a second feedback signal corresponding to an electric current flowed to the first power MOSFET are used to form a PWM signal. The first power MOSFET has plural cells of a vertical type MOS-construction.Type: ApplicationFiled: July 10, 2008Publication date: January 15, 2009Inventors: Toshio Nagasawa, Ryotaro Kudo
-
Patent number: 7436070Abstract: A non-insulated DC-DC converter hs a power MOS•FRT for a highside switch and a power MOS•FET for a lowside switch. In the non-insulated DC-DC converter, the power MOS•FET for the highside switch and the power MOS•FET for the lowside switch, driver circuits that control operations of these elements, respectively, and a Schottky barrier diode connected in parallel with the power MOS•FET for the lowside switch are respectively formed in four different semiconductor chips. These four semiconductor chips are housed in one package. The semiconductor chips are mounted over the same die pad. The semiconductor chips are disposed so as to approach each other.Type: GrantFiled: April 19, 2005Date of Patent: October 14, 2008Assignee: Renesas Technology Corp.Inventors: Tomoaki Uno, Masaki Shiraishi, Nobuyoshi Matsuura, Toshio Nagasawa
-
Patent number: 7408388Abstract: There are provided a switching power supply device performing a stable operation with fast response, a semiconductor integrated circuit device, and a power supply device. A capacitor is provided between the output side of an inductor and a ground potential. A first power MOSFET supplies an electric current from an input voltage to the input side of the inductor. A second power MOSFET turned on when the first power MOSFET is off allows the input side of the inductor to be of a predetermined potential. A first feedback signal corresponding to an output voltage obtained from the output side of the inductor and a second feedback signal corresponding to an electric current flowed to the first power MOSFET are used to form a PWM signal. The first power MOSFET has plural cells of a vertical type MOS-construction. The number of cells is 1/N. A detection MOSFET in which the gains and the drains are shared over the same semiconductor substrate with the first power MOSFET is provided to form a second feedback signal.Type: GrantFiled: October 26, 2006Date of Patent: August 5, 2008Assignee: Renesas Technology Corp.Inventors: Toshio Nagasawa, Ryotaro Kudo
-
Publication number: 20080129273Abstract: In a driver circuit constructing a switching power supply device that switches power transistors passing a current through a coil by a PWM mode, a current detection transistor, which is smaller in size than the low-potential side power transistor, and a current detection resistor are provided in parallel to the low-potential side power transistor. The same control voltage as the power transistor is applied to the control terminal of the current detection transistor. An operational amplifier is formed, that has the potential of the connection node between the current detection transistor and the current detection resistor applied to its inverse input terminal and a feedback loop, so as to make a pair of input terminals of the operational amplifier be at the same potential. A signal produced by the current detection resistor is thus outputted as a current detection signal.Type: ApplicationFiled: January 22, 2008Publication date: June 5, 2008Inventors: Koji TATENO, Ryotaro Kudo, Shin Chiba, Kyoichi Hosokawa, Toshio Nagasawa
-
Patent number: 7345340Abstract: A semiconductor integrated circuit that has a quick response to changes in source/drain electrode voltage having an LDMOS transistor. The transistor has a second conduction type first well region formed in a first conduction type semiconductor substrate; a first conduction type second well region formed in the first well region; a second conduction type third well region formed in the second well region; a drain region formed in the second well region; a source region formed in the third well region; a gate electrode formed through a gate insulating film over the third well region between the drain region and the source region; and an insulating layer formed between the gate electrode and the drain region. Parasitic capacitances between the semiconductor substrate and the source region and those between the substrate and the drain region are respectively in series.Type: GrantFiled: October 20, 2005Date of Patent: March 18, 2008Assignee: Renesas Technology Corp.Inventors: Mitsuharu Hitani, Toshio Nagasawa, Akihiro Tamura
-
Patent number: 7342391Abstract: In a driver circuit constructing a switching power supply device that switches power transistors passing a current through a coil by a PWM mode, a current detection transistor, which is smaller in size than the low-potential side power transistor, and a current detection resistor are provided in parallel to the low-potential side power transistor. The same control voltage as the power transistor is applied to the control terminal of the current detection transistor. An operational amplifier is formed, that has the potential of the connection node between the current detection transistor and the current detection resistor applied to its inverse input terminal and a feedback loop, so as to make a pair of input terminals of the operational amplifier be at the same potential. A signal produced by the current detection resistor is thus outputted as a current detection signal.Type: GrantFiled: June 8, 2007Date of Patent: March 11, 2008Assignee: Renesas Technology Corp.Inventors: Koji Tateno, Ryotaro Kudo, Shin Chiba, Kyoichi Hosokawa, Toshio Nagasawa
-
Publication number: 20070236204Abstract: In a driver circuit constructing a switching power supply device that switches power transistors passing a current through a coil by a PWM mode, a current detection transistor, which is smaller in size than the low-potential side power transistor, and a current detection resistor are provided in parallel to the low-potential side power transistor. The same control voltage as the power transistor is applied to the control terminal of the current detection transistor. An operational amplifier is formed, that has the potential of the connection node between the current detection transistor and the current detection resistor applied to its inverse input terminal and a feedback loop, so as to make a pair of input terminals of the operational amplifier be at the same potential. A signal produced by the current detection resistor is thus outputted as a current detection signal.Type: ApplicationFiled: June 8, 2007Publication date: October 11, 2007Inventors: Koji Tateno, Ryotaro Kudo, Shin Chiba, Kyoichi Hosokawa, Toshio Nagasawa
-
Patent number: 7245116Abstract: In a driver circuit constructing a switching power supply device that switches power transistors passing a current through a coil by a PWM mode, a current detection transistor, which is smaller in size than the low-potential side power transistor and a current detection resistor are provided in parallel to the low-potential side power transistor. The same control voltage as the power transistor is applied to the control terminal of the current detection transistor. An operational amplifier is formed, that has the potential of the connection node between the current detection transistor and the current detection resistor applied to its inverse input terminal and a feedback loop, so as to make a pair of input terminals of the operational amplifier be at the same potential. A signal produced by the current detection resistor is thus outputted as a current detection signal.Type: GrantFiled: April 7, 2005Date of Patent: July 17, 2007Assignee: Renesas Technology Corp.Inventors: Koji Tateno, Ryotaro Kudo, Shin Chiba, Kyoichi Hosokawa, Toshio Nagasawa
-
Publication number: 20070159150Abstract: The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low.Type: ApplicationFiled: January 14, 2005Publication date: July 12, 2007Inventors: Kyoichi Hosokawa, Ryotaro Kudo, Toshio Nagasawa, Koji Tateno
-
Publication number: 20070103005Abstract: There are provided a switching power supply device performing a stable operation with fast response, a semiconductor integrated circuit device, and a power supply device. A capacitor is provided between the output side of an inductor and a ground potential. A first power MOSFET supplies an electric current from an input voltage to the input side of the inductor. A second power MOSFET turned on when the first power MOSFET is off allows the input side of the inductor to be of a predetermined potential. A first feedback signal corresponding to an output voltage obtained from the output side of the inductor and a second feedback signal corresponding to an electric current flowed to the first power MOSFET are used to form a PWM signal. The first power MOSFET has plural cells of a vertical type MOS-construction. The number of cells is 1/N. A detection MOSFET in which the gains and the drains are shared over the same semiconductor substrate with the first power MOSFET is provided to form a second feedback signal.Type: ApplicationFiled: October 26, 2006Publication date: May 10, 2007Inventors: Toshio Nagasawa, Ryotaro Kudo
-
Publication number: 20060086973Abstract: A semiconductor integrated circuit that has a quick response to changes in source/drain electrode voltage having an LDMOS transistor. The transistor has a second conduction type first well region formed in a first conduction type semiconductor substrate; a first conduction type second well region formed in the first well region; a second conduction type third well region formed in the second well region; a drain region formed in the second well region; a source region formed in the third well region; a gate electrode formed through a gate insulating film over the third well region between the drain region and the source region; and an insulating layer formed between the gate electrode and the drain region. Parasitic capacitances between the semiconductor substrate and the source region and those between the substrate and the drain region are respectively in series.Type: ApplicationFiled: October 20, 2005Publication date: April 27, 2006Inventors: Mitsuharu Hitani, Toshio Nagasawa, Akihiro Tamura
-
Publication number: 20050231177Abstract: In a driver circuit constructing a switching power supply device that switches power transistors passing a current through a coil by a PWM mode, a current detection transistor, which is smaller in size than the low-potential side power transistor and a current detection resistor are provided in parallel to the low-potential side power transistor. The same control voltage as the power transistor is applied to the control terminal of the current detection transistor. An operational amplifier is formed, that has the potential of the connection node between the current detection transistor and the current detection resistor applied to its inverse input terminal and a feedback loop, so as to make a pair of input terminals of the operational amplifier be at the same potential. A signal produced by the current detection resistor is thus outputted as a current detection signal.Type: ApplicationFiled: April 7, 2005Publication date: October 20, 2005Inventors: Koji Tateno, Ryotaro Kudo, Shin Chiba, Kyoichi Hosokawa, Toshio Nagasawa
-
Publication number: 20050231990Abstract: A non-insulated DC-DC converter a power MOS·FRT for a highside switch and a power MOS·FET for a lowside switch. In the non-insulated DC-DC converter, the power MOS·FET for the highside switch and the power MOS·FET for the lowside switch, driver circuits that control operations of these elements, respectively, and a Schottky barrier diode connected in parallel with the power MOS·FET for the lowside switch are respectively formed in four different semiconductor chips. These four semiconductor chips are housed in one package. The semiconductor chips are mounted over the same die pad. The semiconductor chips are disposed so as to approach each other.Type: ApplicationFiled: April 19, 2005Publication date: October 20, 2005Inventors: Tomoaki Uno, Masaki Shiraishi, Nobuyoshi Matsuura, Toshio Nagasawa
-
Patent number: 4518353Abstract: The disclosure relates to a vacuum sintering furnace having a lubricant eliminating section, sintering section and cooling section which are aligned in series and connected by connecting hood means to each other so that a workpiece may be directly transferred to the following section without exposure of the workpiece to outside air. The connecting hood means comprises doors for selectively opening and closing the boundaries between the neighboring sections. Furthermore, the lubricant eliminating section is provided with a lubricant trapping device mounted on an exhaust line connecting a furnace body and a vacuum pump to each other, thereby the stable operation of the vacuum pump is ensured.Type: GrantFiled: June 26, 1984Date of Patent: May 21, 1985Assignees: Chugai Ro Co., Ltd., Mitsubishi Kinzoku Kabushiki KaishaInventors: Takashi Banno, Tadashi Seki, Masafumi Kawaguchi, Yukio Tanaka, Morikatsu Iwasaki, Toshio Nagasawa
-
Patent number: 4412125Abstract: An electrical heating element material of a sheet form is provided, which is comprised of a web of a synthetic resin having a plurality of metal conductor wires arranged therein in parallel to one another along the longitudinal direction of the web. The web is folded in succession at predetermined intervals along folding lines inclined at a small acute angle to the transverse direction of the web to form a substantially two-layer parallelogrammatic sheet. Considering the small angle, the sheet is, for practical purposes, rectangular.Type: GrantFiled: September 27, 1982Date of Patent: October 25, 1983Assignee: Ube Industries, Ltd.Inventors: Toshio Nagasawa, Yoshio Nishihara
-
Patent number: 4370548Abstract: An electrical heating element material of a sheet form is provided, which is comprised of a web of a synthetic resin having a plurality of metal conductor wires arranged therein in parallel to one another along the longitudinal direction of the web. The web is folded in succession at predetermined intervals along folding lines inclined at a small acute angle to the transverse direction of the web to form a substantially two-layer parallelogrammatic sheet. Considering the small angle, the sheet is, for practical purposes, rectangular.Type: GrantFiled: August 11, 1980Date of Patent: January 25, 1983Assignee: Ube Industries, Ltd.Inventors: Toshio Nagasawa, Yoshio Nishihara
-
Patent number: 4323607Abstract: In a heat shrinkable synthetic resin cover adapted to seal a joint between two pipes or an electric cable, the cover is made of a rectangular sheet shaped cross-linked polymer and a flexible electric heater covered by a cross-linked polymer contained in a heat shrinkable synthetic resin member such that the electric heater crosses at right angles an inherent direction of heat shrink of the member so as not prevent inherent heat shrink thereof.Type: GrantFiled: August 23, 1979Date of Patent: April 6, 1982Assignees: UBE Industries, Ltd., The Furukawa Electric Co., Ltd.Inventors: Hiroshi Nishimura, Tetsuo Monma, Minoru Yoshida, Kazunari Kirimoto, Yoshio Hayamizu, Toshio Nagasawa
-
Patent number: 4078111Abstract: Provided hereinbelow is a process of extrusion-coating the central core, said core being used in a submarine coaxial cable, with an insulator of high pressure-processed polyethylene having a density of from 0.925 to 0.940 g/cm.sup.3 and a melt index of from 0.01 to 0.Type: GrantFiled: May 20, 1976Date of Patent: March 7, 1978Assignee: UBE Industries, Ltd.Inventors: Koji Yamaguchi, Hideaki Takashima, Iwao Tsurutani, Toshio Nagasawa