Patents by Inventor Toshio Nakanishi

Toshio Nakanishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10755922
    Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: August 25, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Timothee Julien Vincent Blanquart, Mitsuya Utsuno, Yoshio Susa, Atsuki Fukazawa, Toshio Nakanishi
  • Publication number: 20200013612
    Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.
    Type: Application
    Filed: May 30, 2019
    Publication date: January 9, 2020
    Inventors: Timothee Julien Vincent Blanquart, Mitsuya Utsuno, Yoshio Susa, Atsuki Fukazawa, Toshio Nakanishi
  • Patent number: 10318441
    Abstract: A measurement apparatus includes a plurality of modules and a main unit for collecting measurement data output from the modules. The housing of the main unit can be carried by a user of the measurement apparatus, and the plurality of modules are removably accommodated in the housing. A controller area network interface circuit of the main unit collects the measurement data output from the modules accommodated in the housing. A main CPU of the main unit outputs the collected measurement data to, for example, a personal computer connected to the main unit. An internal memory and a USB memory connected to a USB memory module store the collected measurement data.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: June 11, 2019
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventors: Yoshinori Inoue, Katsunori Yazawa, Hiroshi Inagaki, Wenjing Ma, Kaoru Hisada, Toshio Nakanishi
  • Patent number: 10190217
    Abstract: Disclosed is a plasma film-forming method including: accommodating a workpiece in a chamber; supplying a film-forming gas into the chamber; generating plasma within the chamber; and exciting the film-forming gas by the plasma to form a predetermined film on the workpiece. Helium gas is supplied as a plasma generating gas into the chamber together with the film-forming gas to generate plasma containing the helium gas in the chamber.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: January 29, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Minoru Honda, Toshio Nakanishi, Masashi Imanaka, Cheonsoo Han
  • Patent number: 10094757
    Abstract: A particulate measurement apparatus controls a particulate sensor which includes an ion generation section (110), an exhaust gas electrification section (120), an ion trapping section (130), and a second electrode (132). The second electrode (132) is maintained at a potential repulses the ions to assist the trapping of the ions at the ion trapping section (130). The particulate measurement apparatus includes a second isolation transformer (720b) and an auxiliary electrode current measurement circuit (780). The second isolation transformer (720b) applies a voltage to the second electrode (132) through a second wiring line (222). The auxiliary electrode current measurement circuit (780) detects an auxiliary electrode current Iir flowing to the second wiring line (222). The particulate measurement apparatus determines at least one of the state of the particulate sensor and the state of the second wiring line (222) based on the auxiliary electrode current Iir.
    Type: Grant
    Filed: October 24, 2016
    Date of Patent: October 9, 2018
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventors: Kaoru Hisada, Toshio Nakanishi, Yuichi Goto, Katsunori Yazawa
  • Patent number: 10017853
    Abstract: A processing method of a silicon nitride film can modify a silicon nitride film such that the silicon nitride film has a required characteristic even if it is formed at a low temperature by CVD. The processing method of the silicon nitride film formed on a substrate by plasma CVD includes modifying a surface portion of the silicon nitride film by irradiating microwave hydrogen plasma to the silicon nitride film to remove hydrogens in the surface portion of the silicon nitride film with atomic hydrogens contained in the microwave hydrogen plasma.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: July 10, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Toshio Nakanishi, Daisuke Katayama
  • Publication number: 20180127880
    Abstract: Disclosed is a microwave plasma source including a microwave generator that generates microwaves; a waveguide that propagates the microwaves in a TE mode; a microwave converter including a conversion port that converts a vibration mode of the microwaves guided from the waveguide from the TE mode into a TEM mode, and a coaxial waveguide that propagates the microwaves from the conversion port toward the chamber and converts a remaining TE mode component into the TEM mode during the propagation; a planar antenna including a plurality of slots that radiate the microwaves guided to the coaxial waveguide toward the chamber; and a microwave transmitting plate made of a dielectric material that transmits the microwaves radiated from the plurality of slots of the planar antenna to the chamber. A length of the coaxial waveguide is equal to or longer than a wavelength of the microwaves generated from the microwave generator.
    Type: Application
    Filed: October 31, 2017
    Publication date: May 10, 2018
    Inventors: Koji Kotani, Souichi Nishijima, Toshio Nakanishi, Cheonsoo Han
  • Publication number: 20170370000
    Abstract: Disclosed is a plasma film-forming method including: accommodating a workpiece in a chamber; supplying a film-forming gas into the chamber; generating plasma within the chamber; and exciting the film-forming gas by the plasma to form a predetermined film on the workpiece. Helium gas is supplied as a plasma generating gas into the chamber together with the film-forming gas to generate plasma containing the helium gas in the chamber.
    Type: Application
    Filed: June 20, 2017
    Publication date: December 28, 2017
    Inventors: Minoru Honda, Toshio Nakanishi, Masashi Imanaka, Cheonsoo Han
  • Publication number: 20170369996
    Abstract: Provided is a plasma film-firming apparatus including: a chamber configured to accommodate a substrate therein; a substrate pedestal configured to disposed the substrate thereon within the chamber; a gas supply mechanism configured to supply a gas including a film-forming gas into the chamber; an exhaust mechanism configured to exhaust an inside of the chamber; and a plasma generating unit configured to generate plasma in the chamber. The substrate pedestal includes a pedestal body having a smaller diameter than that of the substrate and including a placement surface, and an annular adjustment member disposed outside the pedestal body. The adjustment member is replaceably installed. A plurality of adjustment members having various steps are provided at a position outside the substrate as the adjustment member, and among the plurality of adjustment members, an adjustment member is selected and used according to a processing condition of a plasma processing.
    Type: Application
    Filed: June 20, 2017
    Publication date: December 28, 2017
    Inventors: Masashi Imanaka, Toshio Nakanishi, Minoru Honda, Koji Kotani
  • Publication number: 20170356084
    Abstract: A processing method of a silicon nitride film can modify a silicon nitride film such that the silicon nitride film has a required characteristic even if it is formed at a low temperature by CVD. The processing method of the silicon nitride film formed on a substrate by plasma CVD includes modifying a surface portion of the silicon nitride film by irradiating microwave hydrogen plasma to the silicon nitride film to remove hydrogens in the surface portion of the silicon nitride film with atomic hydrogens contained in the microwave hydrogen plasma.
    Type: Application
    Filed: June 7, 2017
    Publication date: December 14, 2017
    Inventors: Toshio Nakanishi, Daisuke Katayama
  • Publication number: 20170358835
    Abstract: Disclosed is a microwave plasma processing apparatus including: a chamber that accommodates a workpiece; a microwave generating source that generates microwaves; a waveguide unit that guides the microwaves toward the chamber; a planar antenna made of a conductor having a plurality of slots that radiate the microwaves toward the chamber; a microwave-transmitting plate made of a dielectric material that constitutes a top wall of the chamber and transmits the microwaves radiated from the plurality of slots; a gas supply mechanism that supplies a gas into the chamber; and an exhaust mechanism that exhausts an atmosphere in the chamber. The planar antenna includes a plurality of slot groups each forming one unit including one or more of the slots, and the slots are formed so as to form an odd number of the slot groups equal to or more than three in a circumferential direction.
    Type: Application
    Filed: June 5, 2017
    Publication date: December 14, 2017
    Inventors: Toshio Nakanishi, Kouji Tanaka, Michitaka Aita, Takafumi Nogami
  • Patent number: 9779936
    Abstract: Disclosed is a plasma processing method including: growing a polycrystalline silicon layer on a processing target base body; and exposing the polycrystalline silicon layer to hydrogen radicals by supplying a processing gas containing hydrogen into a processing container that accommodates the processing target base body including the polycrystalline silicon layer grown thereon and radiating microwaves within the processing container to generate the hydrogen radicals.
    Type: Grant
    Filed: April 17, 2013
    Date of Patent: October 3, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Daisuke Katayama, Minoru Honda, Toshio Nakanishi
  • Patent number: 9670883
    Abstract: An engine includes an engine body, a DPF case therein, high pressure and low pressure EGR paths, and a supercharger. The high pressure EGR path is between exhaust and intake manifolds. An exhaust gas discharge path extends from the DPF case. An intake pipe extends from the supercharger air compressor. The low pressure EGR path is between the exhaust gas discharge path of the DPF case and the intake pipe. The low pressure EGR path includes a low pressure EGR cooler. An extending direction of a crankshaft defines a longitudinal direction. A flywheel exists on a rear side. A width direction of the engine body defines a lateral direction. The low pressure EGR path includes a rear path portion extending along a rear side of the engine body, and a side path portion extending along a lateral side of the engine body on a side close to the exhaust manifold.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: June 6, 2017
    Assignee: KUBOTA Corporation
    Inventors: Kazumichi Matsuishi, Tetsuya Kosaka, Tomohiro Ninomiya, Yusuke Suzuki, Toshio Nakanishi, Yongchol Lee, Takashi Kushigemachi
  • Publication number: 20170115199
    Abstract: A particulate measurement apparatus controls a particulate sensor which includes an ion generation section (110), an exhaust gas electrification section (120), an ion trapping section (130), and a second electrode (132). The second electrode (132) is maintained at a potential repulses the ions to assist the trapping of the ions at the ion trapping section (130). The particulate measurement apparatus includes a second isolation transformer (720b) and an auxiliary electrode current measurement circuit (780). The second isolation transformer (720b) applies a voltage to the second electrode (132) through a second wiring line (222). The auxiliary electrode current measurement circuit (780) detects an auxiliary electrode current Iir flowing to the second wiring line (222). The particulate measurement apparatus determines at least one of the state of the particulate sensor and the state of the second wiring line (222) based on the auxiliary electrode current Iir.
    Type: Application
    Filed: October 24, 2016
    Publication date: April 27, 2017
    Applicant: NGK SPARK PLUG CO., LTD.
    Inventors: Kaoru HISADA, Toshio NAKANISHI, Yuichi GOTO, Katsunori YAZAWA
  • Publication number: 20160139098
    Abstract: A measurement apparatus includes a plurality of modules and a main unit for collecting measurement data output from the modules. The housing of the main unit can be carried by a user of the measurement apparatus, and the plurality of modules are removably accommodated in the housing. A CAN I/F circuit of the main unit collects the measurement data output from the module accommodated in the housing. A main CPU of the main unit outputs the collected measurement data to, for example, a personal computer connected to the main unit. An internal memory and a USB memory connected to a USB memory module store the collected measurement data.
    Type: Application
    Filed: October 28, 2015
    Publication date: May 19, 2016
    Applicant: NGK SPARK PLUG CO., LTD.
    Inventors: Yoshinori INOUE, Katsunori YAZAWA, Hiroshi INAGAKI, Wenjing MA, Kaoru HISADA, Toshio NAKANISHI
  • Publication number: 20150162193
    Abstract: Disclosed is a plasma processing method including: growing a polycrystalline silicon layer on a processing target base body; and exposing the polycrystalline silicon layer to hydrogen radicals by supplying a processing gas containing hydrogen into a processing container that accommodates the processing target base body including the polycrystalline silicon layer grown thereon and radiating microwaves within the processing container to generate the hydrogen radicals.
    Type: Application
    Filed: April 17, 2013
    Publication date: June 11, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Daisuke Katayama, Minoru Honda, Toshio Nakanishi
  • Publication number: 20150093886
    Abstract: A plasma processing method of one embodiment of the present invention is disclosed for growing a polycrystalline silicon layer on a base material to be processed. The plasma processing method includes: (a) a step for preparing, in a processing container, the base material to be processed; and (b) a step for growing the polycrystalline silicon layer on the base material by introducing microwaves for plasma excitation into the processing container, and introducing a silicon-containing raw material gas into the processing container.
    Type: Application
    Filed: April 23, 2013
    Publication date: April 2, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Minoru Honda, Toshio Nakanishi, Daisuke Katayama
  • Publication number: 20150082772
    Abstract: An engine includes an engine body, a DPF case therein, high pressure and low pressure EGR paths, and a supercharger. The high pressure EGR path is between exhaust and intake manifolds. An exhaust gas discharge path extends from the DPF case. An intake pipe extends from the supercharger air compressor. The low pressure EGR path is between the exhaust gas discharge path of the DPF case and the intake pipe. The low pressure EGR path includes a low pressure EGR cooler. An extending direction of a crankshaft defines a longitudinal direction. A flywheel exists on a rear side. A width direction of the engine body defines a lateral direction. The low pressure EGR path includes a rear path portion extending along a rear side of the engine body, and a side path portion extending along a lateral side of the engine body on a side close to the exhaust manifold.
    Type: Application
    Filed: August 8, 2014
    Publication date: March 26, 2015
    Inventors: Kazumichi MATSUISHI, Tetsuya KOSAKA, Tomohiro NINOMIYA, Yusuke SUZUKI, Toshio NAKANISHI, Yongchol LEE, Takashi KUSHIGEMACHI
  • Patent number: 8569186
    Abstract: A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas.
    Type: Grant
    Filed: November 13, 2012
    Date of Patent: October 29, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Masayuki Kohno, Tatsuo Nishita, Toshio Nakanishi
  • Patent number: D721097
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: January 13, 2015
    Assignee: Kubota Corporation
    Inventors: Tetsuya Kosaka, Toshio Nakanishi