Abstract: Examples of a cleaning method includes supplying a cleaning gas into an exhaust duct that provides an exhaust flow passage of a gas supplied to an area above a susceptor, the exhaust duct having a shape surrounding the susceptor in plan view, and activating the cleaning gas to clean an inside of the exhaust duct.

Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Abstract: In an EGR device in which an EGR passage is merged with an intake passage communicating with a compressor housing of a supercharger, the EGR passage is extended to the inner side of the intake passage with respect to a junction between the EGR passage and the intake passage, and the position of a terminal end of an extended passage section in an air flow direction matches the position of a terminal end of the intake passage, the extended passage section being the EGR passage extended. The merged passage section where the EGR passage is merged with the intake passage is a joint pipe that connects an intake tube and the compressor housing.

Abstract: Provided is a plasma film-firming apparatus including: a chamber configured to accommodate a substrate therein; a substrate pedestal configured to disposed the substrate thereon within the chamber; a gas supply mechanism configured to supply a gas including a film-forming gas into the chamber; an exhaust mechanism configured to exhaust an inside of the chamber; and a plasma generating unit configured to generate plasma in the chamber. The substrate pedestal includes a pedestal body having a smaller diameter than that of the substrate and including a placement surface, and an annular adjustment member disposed outside the pedestal body. The adjustment member is replaceably installed. A plurality of adjustment members having various steps are provided at a position outside the substrate as the adjustment member, and among the plurality of adjustment members, an adjustment member is selected and used according to a processing condition of a plasma processing.

Abstract: Examples of a cleaning method includes supplying a cleaning gas into an exhaust duct that provides an exhaust flow passage of a gas supplied to an area above a susceptor, the exhaust duct having a shape surrounding the susceptor in plan view, and activating the cleaning gas to clean an inside of the exhaust duct.

Abstract: In an EGR device in which an EGR passage is merged with an intake passage communicating with a compressor housing of a supercharger, the EGR passage is extended to the inner side of the intake passage with respect to a junction between the EGR passage and the intake passage, and the position of a terminal end of an extended passage section in an air flow direction matches the position of a terminal end of the intake passage, the extended passage section being the EGR passage extended. The merged passage section where the EGR passage is merged with the intake passage is a joint pipe that connects an intake tube and the compressor housing.

Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

Abstract: A measurement apparatus includes a plurality of modules and a main unit for collecting measurement data output from the modules. The housing of the main unit can be carried by a user of the measurement apparatus, and the plurality of modules are removably accommodated in the housing. A controller area network interface circuit of the main unit collects the measurement data output from the modules accommodated in the housing. A main CPU of the main unit outputs the collected measurement data to, for example, a personal computer connected to the main unit. An internal memory and a USB memory connected to a USB memory module store the collected measurement data.

Abstract: Disclosed is a plasma film-forming method including: accommodating a workpiece in a chamber; supplying a film-forming gas into the chamber; generating plasma within the chamber; and exciting the film-forming gas by the plasma to form a predetermined film on the workpiece. Helium gas is supplied as a plasma generating gas into the chamber together with the film-forming gas to generate plasma containing the helium gas in the chamber.

Abstract: A particulate measurement apparatus controls a particulate sensor which includes an ion generation section (110), an exhaust gas electrification section (120), an ion trapping section (130), and a second electrode (132). The second electrode (132) is maintained at a potential repulses the ions to assist the trapping of the ions at the ion trapping section (130). The particulate measurement apparatus includes a second isolation transformer (720b) and an auxiliary electrode current measurement circuit (780). The second isolation transformer (720b) applies a voltage to the second electrode (132) through a second wiring line (222). The auxiliary electrode current measurement circuit (780) detects an auxiliary electrode current Iir flowing to the second wiring line (222). The particulate measurement apparatus determines at least one of the state of the particulate sensor and the state of the second wiring line (222) based on the auxiliary electrode current Iir.

Abstract: A processing method of a silicon nitride film can modify a silicon nitride film such that the silicon nitride film has a required characteristic even if it is formed at a low temperature by CVD. The processing method of the silicon nitride film formed on a substrate by plasma CVD includes modifying a surface portion of the silicon nitride film by irradiating microwave hydrogen plasma to the silicon nitride film to remove hydrogens in the surface portion of the silicon nitride film with atomic hydrogens contained in the microwave hydrogen plasma.

Abstract: Disclosed is a microwave plasma source including a microwave generator that generates microwaves; a waveguide that propagates the microwaves in a TE mode; a microwave converter including a conversion port that converts a vibration mode of the microwaves guided from the waveguide from the TE mode into a TEM mode, and a coaxial waveguide that propagates the microwaves from the conversion port toward the chamber and converts a remaining TE mode component into the TEM mode during the propagation; a planar antenna including a plurality of slots that radiate the microwaves guided to the coaxial waveguide toward the chamber; and a microwave transmitting plate made of a dielectric material that transmits the microwaves radiated from the plurality of slots of the planar antenna to the chamber. A length of the coaxial waveguide is equal to or longer than a wavelength of the microwaves generated from the microwave generator.

Abstract: Provided is a plasma film-firming apparatus including: a chamber configured to accommodate a substrate therein; a substrate pedestal configured to disposed the substrate thereon within the chamber; a gas supply mechanism configured to supply a gas including a film-forming gas into the chamber; an exhaust mechanism configured to exhaust an inside of the chamber; and a plasma generating unit configured to generate plasma in the chamber. The substrate pedestal includes a pedestal body having a smaller diameter than that of the substrate and including a placement surface, and an annular adjustment member disposed outside the pedestal body. The adjustment member is replaceably installed. A plurality of adjustment members having various steps are provided at a position outside the substrate as the adjustment member, and among the plurality of adjustment members, an adjustment member is selected and used according to a processing condition of a plasma processing.

Abstract: Disclosed is a plasma film-forming method including: accommodating a workpiece in a chamber; supplying a film-forming gas into the chamber; generating plasma within the chamber; and exciting the film-forming gas by the plasma to form a predetermined film on the workpiece. Helium gas is supplied as a plasma generating gas into the chamber together with the film-forming gas to generate plasma containing the helium gas in the chamber.

Abstract: Disclosed is a microwave plasma processing apparatus including: a chamber that accommodates a workpiece; a microwave generating source that generates microwaves; a waveguide unit that guides the microwaves toward the chamber; a planar antenna made of a conductor having a plurality of slots that radiate the microwaves toward the chamber; a microwave-transmitting plate made of a dielectric material that constitutes a top wall of the chamber and transmits the microwaves radiated from the plurality of slots; a gas supply mechanism that supplies a gas into the chamber; and an exhaust mechanism that exhausts an atmosphere in the chamber. The planar antenna includes a plurality of slot groups each forming one unit including one or more of the slots, and the slots are formed so as to form an odd number of the slot groups equal to or more than three in a circumferential direction.

Abstract: A processing method of a silicon nitride film can modify a silicon nitride film such that the silicon nitride film has a required characteristic even if it is formed at a low temperature by CVD. The processing method of the silicon nitride film formed on a substrate by plasma CVD includes modifying a surface portion of the silicon nitride film by irradiating microwave hydrogen plasma to the silicon nitride film to remove hydrogens in the surface portion of the silicon nitride film with atomic hydrogens contained in the microwave hydrogen plasma.

Abstract: Disclosed is a plasma processing method including: growing a polycrystalline silicon layer on a processing target base body; and exposing the polycrystalline silicon layer to hydrogen radicals by supplying a processing gas containing hydrogen into a processing container that accommodates the processing target base body including the polycrystalline silicon layer grown thereon and radiating microwaves within the processing container to generate the hydrogen radicals.

Abstract: An engine includes an engine body, a DPF case therein, high pressure and low pressure EGR paths, and a supercharger. The high pressure EGR path is between exhaust and intake manifolds. An exhaust gas discharge path extends from the DPF case. An intake pipe extends from the supercharger air compressor. The low pressure EGR path is between the exhaust gas discharge path of the DPF case and the intake pipe. The low pressure EGR path includes a low pressure EGR cooler. An extending direction of a crankshaft defines a longitudinal direction. A flywheel exists on a rear side. A width direction of the engine body defines a lateral direction. The low pressure EGR path includes a rear path portion extending along a rear side of the engine body, and a side path portion extending along a lateral side of the engine body on a side close to the exhaust manifold.