Abstract: A method for manufacturing a semiconductor device according to one embodiment of the present invention includes a step of covering a plurality of base plates in which respective semiconductor chips are mounted, by means of a sealing resin such that a plurality of base plates are spaced apart from each other, and a step of cutting the sealing resin between a plurality of base plates.

Abstract: A method for manufacturing a semiconductor device according to an aspect of the present invention includes the steps of: forming a metallic film; forming plural connecting conductors including engaging portions on the metallic film; forming a first resin; curing a second resin; forming a wiring pattern; forming a second external electrode; and cutting the second resin. The step of forming the first resin is the step of inserting and bringing a projected first external electrode provided in each of plural semiconductor chips in and into contact with each of the engaging portions of the plural connecting conductors, and forming a first resin between the plural semiconductor chips and the metallic film. The step of curing the second resin is the step of covering the plural semiconductor chips with the second resin to cure the second resin.

Abstract: A method for manufacturing a semiconductor device according to one embodiment of the present invention includes a step of covering a plurality of base plates in which respective semiconductor chips are mounted, by means of a sealing resin such that a plurality of base plates are spaced apart from each other, and a step of cutting the sealing resin between a plurality of base plates.

Abstract: A semiconductor device includes: a flat plate; a semiconductor chip which is disposed on one main surface of the flat plate and whose surface opposite an element circuit surface is fixedly bonded; a single layer of an insulating material layer formed continuously on the element circuit surface of the semiconductor chip and on the main surface of the flat plate; an opening formed at a position, in the insulating material layer, above an electrode disposed on the element circuit surface of the semiconductor chip; a conductive part formed in the opening so as to be connected to the electrode of the semiconductor chip; a wiring layer formed on the insulating material layer so as to be connected to the conductive part, and partly led out to a peripheral area of the semiconductor chip; and external electrodes formed on the wiring layer.

Abstract: A semiconductor chip is formed by dividing a semiconductor wafer by use of the laser dicing technique. The semiconductor chip has a laser dicing region on the side surface thereof. A dummy wiring layer is formed along the laser dicing region on the surface layer of the laser dicing region. A laser beam is applied to the dummy wiring layer to divide the semiconductor wafer.

Abstract: A semiconductor chip is formed by dividing a semiconductor wafer by use of the laser dicing technique. The semiconductor chip has a laser dicing region on the side surface thereof. A dummy wiring layer is formed along the laser dicing region on the surface layer of the laser dicing region. A laser beam is applied to the dummy wiring layer to divide the semiconductor wafer.

Abstract: A semiconductor chip is formed by dividing a semiconductor wafer by use of the laser dicing technique. The semiconductor chip has a laser dicing region on the side surface thereof. A dummy wiring layer is formed along the laser dicing region on the surface layer of the laser dicing region. A laser beam is applied to the dummy wiring layer to divide the semiconductor wafer.

Abstract: A semiconductor wafer includes a plurality of element-forming regions, a dicing line region and an insulating film. The dicing line region separates the element-forming regions from each other. The insulating film covers the element-forming regions and the dicing line region. The insulating film insulating film is formed of multi-layered insulating layers which insulate respective wiring layers of a multi-layer form. A separation region is formed at least in a portion of the insulating film located on the dicing line region, so that the separation region separates the insulating film on the dicing line region from the insulating film on the element-forming regions.

Abstract: A first level packaging assembly includes a chip-mounting base defined by a first surface and a second surface opposite to the first surface; a plurality of external connection lands disposed on the first surface; a plurality of solder balls connected to the external connection lands; a plurality of internal connection lands disposed on the second surface; a plurality of solder joints connected to the internal connection lands including solder materials having lower melting temperature than the solder balls; a semiconductor chip defined by a third surface and a fourth surface opposite to the third surface, connected to the solder joints on the third surface; and an underfill resin sandwiched between the second and third surfaces so as to mold the solder joints.

Abstract: A semiconductor chip is formed by dividing a semiconductor wafer by use of the laser dicing technique. The semiconductor chip has a laser dicing region on the side surface thereof. A dummy wiring layer is formed along the laser dicing region on the surface layer of the laser dicing region. A laser beam is applied to the dummy wiring layer to divide the semiconductor wafer.

Abstract: A semiconductor package of this invention comprises an electrode pad arranged on a semiconductor chip, a bonding wire, an end of which is coupled to the electrode pad, and a connection pad arranged parallel to a direction of arrangement of the bonding wire, to which another end of the bonding wire is coupled, and a pitch of the connection pad is wider than that of the electrode pad.

Abstract: A semiconductor package of this invention comprises an electrode pad arranged on a semiconductor chip, a bonding wire, an end of which is coupled to the electrode pad, and a connection pad arranged parallel to a direction of arrangement of the bonding wire, to which another end of the bonding wire is coupled, and a pitch of the connection pad is wider than that of the electrode pad.

Abstract: An IC chip and overhang portions are stuck to tape by an adhesive agent layer having elasticity. A plurality of solder balls are attached to the tape. By soldering the solder balls to a printed board, a semiconductor device is mounted. In the case where a temperature cycle has been caused, thermal stress occurs between the IC chip and the printed board or between the hangover portion and the printed board because of a difference in coefficient of thermal expansion between the IC chip or the hangover portion and the printed board. However, this thermal stress is absorbed by the elasticity of the adhesive agent layer. As a result, little thermal stress is applied to solder balls. Even if the above described temperature cycle is repeated, therefore, the solder balls are electrically connected to the printed board stably over a long period of time. In addition, the area of the tape is widened by the area of the hangover portions.